AOS Semiconductor Product Reliability Report AOZ8831DT-03, rev B Plastic Encapsulated Device ALPHA & OMEGA Semiconductor, Inc www.aosmd.com 1 This AOS product reliability report summarizes the qualification result for AOZ8831DT-03. Accelerated environmental tests are performed on a specific sample size, and then followed by electrical test at end point. Review of final electrical test result confirms that AOZ8831DT-03 passes AOS quality and reliability requirements. The released product will be categorized by the process family and be routine monitored for continuously improving the product quality. Table of Contents: I. II. III. IV. Product Description Package and Die information Reliability Stress Test Summary and Results Reliability Evaluation I. Product Description: The AOZ8831-03 is an ultra low capacitance one-line bi-directional transient voltage suppressor diode designed to protect high speed data lines and voltage sensitive electronics from high transient conditions and ESD. This device incorporates one TVS diode in an ultra-small DFN 1.0 x 0.6 package. The AOZ8831-03 comes in an RoHS compliant DFN package. The ultra-small 1.0 x 0.6 x 0.4mm DFN package makes it ideal for applications where PCB space is a premium. The small size and high ESD protection makes it ideal for protecting voltage sensitive electronics from high transient conditions and ESD. Detailed information refers to the datasheet on website. . II. Package and Die Information: AOZ8831DT-03 Product ID Package Type DFN1.0X0.6 2L Lead Frame Cu Die attach material Ag Epoxy Bonding Au wire MSL(moisture sensitive level) Up to Level 1 2 III. Result of Reliability Stress test for AOZ8831DT-03: Test Condition Test Point Total Sample size Number of Failures Standard HTRB Vdd= 80% Vbrmax. Temp = 150°C 168 / 500 1000 hours 924 pcs 0 JESD22-A108 MSL Precondition 168hr 85°C / 85%RH + 3 cycle reflow@260°C (MSL 1) - 2772 pcs 0 JESD22-A113 Temperature Cycle -65 °C to +150 °C, air to air 250 / 500 cycles 924 pcs 0 JESD22-A104 Autoclave 121°C, 29.7psi, RH= 100% 96 hours 924 pcs 0 JESD22-A102 HAST 130°C, 85%RH, 33.3 psi, Vdd= 80% Vbrmax. 96 hours 924 pcs 0 JESD22-A110 Test Item Note A: The reliability data presents total of available generic data up to the published date. IV. Reliability Evaluation FIT rate (per billion): 5.38 MTTF = 21203 years The presentation of FIT rate for the individual product reliability is restricted by the actual burn-in sample size of the selected product. Failure Rate Determination is based on JEDEC Standard JESD 85. FIT means one failure per billion device hours. Failure Rate = 5.38 MTTF = 21203 years Chi²= Chi Squared Distribution, determined by the number of failures and confidence interval N = Total Number of units from burn-in tests H = Duration of burn-in testing Af = Acceleration Factor from Test to Use Conditions (Ea = 0.7eV and Tuse = 55°C) Acceleration Factor [Af] = Exp [Ea / k (1/Tj u – 1/Tj s)] Acceleration Factor ratio list: 55 deg C 70 deg C 85 deg C 100 deg C 115 deg C Af 259 87 32 13 5.64 Tj s = Stressed junction temperature in degree (Kelvin), K = C+273.16 Tj u =The use junction temperature in degree (Kelvin), K = C+273.16 k = Boltzmann’s constant, 8.617164 X 10-5eV / K 3 130 deg C 150 deg C 2.59 1