KSMU120N KERSMI ELECTRONIC CO.,LTD. 100V N-channel MOSFET Description This N-channel MOSFETS use advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features BVDSS 100V 1) 2) 3) 4) RDSON ID 9.4A 0.21Ω Low gate charge. Green device available. Advanced high cell denity trench technology for ultra RDS(ON) Excellent package for good heat dissipation. TO-251 Absolute Maximum Ratings TC=25℃,unless otherwise noted Symbol Parameter Ratings Units VDS Drain-Source Voltage 100 VGS Gate-Source Voltage ±20 V V Continuous Drain Current-1 9.4 Continuous Drain Current-T=100℃ 6.6 Pulsed Drain Current2 38 EAS Single Pulse Avalanche Energy3 91 PD Power Dissipation4 48 TJ, TSTG Operating and Storage Junction Temperature Range -55 to +175 ID A mJ W ℃ Thermal Characteristics www.kersemi.com 1 KSMU120N KERSMI ELECTRONIC CO.,LTD. 100V N-channel MOSFET Symbol Parameter Ratings RƟJC Thermal Resistance ,Junction to Case1 3.1 RƟJA Thermal Resistance, Junction to Ambient1 110 Units ℃/W Package Marking and Ordering Information Part NO. Marking Package KSMU120N KSMU120N TO-251 Electrical Characteristics TC=25℃ Symbol Parameter unless otherwise noted Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Sourtce Breakdown Voltage VDS=0V,ID=250μA 100 — — IDSS Zero Gate Voltage Drain Current VDS=0V, VDS=32V — — 25 IGSS Gate-Source Leakage Current VDS=±20V, VDS=0A — — ±100 v μA nA VDS=VDS, ID=250μA 2.0 — 4.0 V VDS=10V,ID=6A — — 0.21 VDS=2.5V,ID=5A — — — VDS=5V,ID=12A 2.7 — — — 330 — — 92 — — 54 — — 4.5 — — 23 — — 32 — On Characteristics VGS(th) GATE-Source Threshold Voltage RDS(ON) Drain-Source On Resistance² GFS Forward Transconductance Ω S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS=15V,VGS=0V, f=1MHz pF Switching Characteristics td(off) Turn-Off Delay Time tf Fall Time — 23 — Qg Total Gate Charge — — 25 Qgs Gate-SourceCharge VGS=4.5V, VDS=20V, — — 4.8 Qgd Gate-Drain “Miller” Charge ID=6A — — 11 ns ns ns ns nC nC nC — — 1.3 V — 99 150 ns — 390 580 nC td(on) Turn-On Delay Time tr Rise Time VDS=20V, VGS=10V,RGEN=3.3Ω Drain-Source Diode Characteristics VSD Source-Drain Diode ForwardVoltage² trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS=0V,IS =1A IF=7A,di/dt=100A/μS www.kersemi.com 2 KSMU120N KERSMI ELECTRONIC CO.,LTD. 100V N-channel MOSFET Notes: 1. The data tested by surface mounted on a 1 inch²FR-4 board 2OZ copper. 2. The data tested by pulse width≤300us,duty cycle≤2% 3. The EAS data shows Max.rating.The test condition is VDD=25v,VGS=10V,L=0.1mH,iAS=17.8A 4. The power dissipation is limited by 150℃ junction temperature. Typical Characteristics TJ=25℃ Fig 1. Typical Output Characteristics Fig 3. Typical Transfer Characteristics unless otherwise noted Fig 2. Typical Output Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.kersemi.com 3 KSMU120N KERSMI ELECTRONIC CO.,LTD. 100V Fig 5. Typical Capacitance vs. Drain-to-Source Voltage Fig 7. Typical Source-Drain Diode Forward Voltage N-channel MOSFET Fig 6. Typical Gate Charge vs. Drain-to-Source Voltage Fig 8. Maximum Safe Operating Area Fig 9. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.kersemi.com 4