KSMN4490 KERSMI ELECTRONIC CO.,LTD. 200V N-channel MOSFET Description This N-channel MOSFET s use advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features BVDSS 200V RDSON ID 0.08Ω 4.0A 1) 2) Low gate charge. Green device available. 3) 4) Advanced high cell denity trench technology for ultra RDS(ON) Excellent package for good heat dissipation. SOP-8 Absolute Maximum Ratings TC=25℃,unless otherwise noted Symbol Parameter Ratings Units VDS Drain-Source Voltage 200 VGS Gate-Source Voltage ±20 V V Continuous Drain Current-1 4.0 Continuous Drain Current-T=100℃ 3.2 Pulsed Drain Current2 40 EAS Single Pulse Avalanche Energy3 — PD Power Dissipation4 — TJ, TSTG Operating and Storage Junction Temperature -55 to Range +150 ID A mJ W ℃ Thermal Characteristics www.kersemi.com 1 KSMN4490 KERSMI ELECTRONIC CO.,LTD. 200V N-channel MOSFET Symbol Parameter Ratings RƟJC Thermal Resistance ,Junction to Case1 33 RƟJA Thermal Resistance, Junction to Ambient1 65 Units ℃/W Package Marking and Ordering Information Part NO. Marking Package KSMN4490 KSMN4490 SOP-8 Electrical Characteristics TC=25℃ Symbol Parameter unless otherwise noted Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Sourtce Breakdown Voltage VDS=0V,ID=250μA 200 — — IDSS Zero Gate Voltage Drain Current VDS=0V, VDS=32V — — 1 IGSS Gate-Source Leakage Current VDS=±20V, VDS=0A — — ±100 v μA nA VDS=VDS, ID=250μA 2.0 — — V VDS=10V,ID=6A — 0.065 0.080 VDS=2.5V,ID=5A — 0.073 — VDS=5V,ID=12A — 19 — — — — — — — — — — — 14 20 — 20 30 — 32 50 On Characteristics VGS(th) GATE-Source Threshold Voltage RDS(ON) Drain-Source On Resistance² GFS Forward Transconductance Ω --S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS=15V,VGS=0V, f=1MHz pF Switching Characteristics td(off) Turn-Off Delay Time tf Fall Time — 25 35 Qg Total Gate Charge — 34 42 Qgs Gate-SourceCharge VGS=4.5V, VDS=20V, — 7.5 — Qgd Gate-Drain “Miller” Charge ID=6A — 12 — ns ns ns ns nC nC nC — 0.75 1.2 V — 70 100 ns — — — nC td(on) Turn-On Delay Time tr Rise Time VDS=20V, VGS=10V,RGEN=3.3Ω Drain-Source Diode Characteristics VSD Source-Drain Diode ForwardVoltage² trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS=0V,IS =1A IF=7A,di/dt=100A/μS www.kersemi.com 2 KSMN4490 KERSMI ELECTRONIC CO.,LTD. 200V N-channel MOSFET Notes: 1. The data tested by surface mounted on a 1 inch ²FR-4 board 2OZ copper. 2. The data tested by pulse width≤300us,duty cycle≤2% 3. The EAS data shows Max.rating.The test condition is V DD=25v,VGS=10V,L=0.1mH,iAS=17.8A 4. The power dissipation is limited by 150℃ junction temperature. Typical Characteristics TJ=25℃ unless otherwise noted Figure 1.On-Resistance vs. Drain Current Figure3.Gate Charge Figure 2. Capacitance Figure4.On-Resistance vs. Junction Temperature www.kersemi.com 3 KSMN4490 KERSMI ELECTRONIC CO.,LTD. 200V N-channel MOSFET Figure 5:Source-Drain Diode Forward Voltage Figure 6: On-Resistance vs. Gate-to-Source Voltage Figure 7: Threshold Voltage Figure 8.Avalanche Current vs. Time Figure 9: Normalized Maximum Transient Thermal Impedance www.kersemi.com 4