PDTC123J series NPN resistor-equipped transistors; R1 = 2.2 k, R2 = 47 k Rev. 7 — 21 December 2011 Product data sheet 1. Product profile 1.1 General description NPN Resistor-Equipped Transistor (RET) family in small Surface-Mounted Device (SMD) plastic packages. Table 1. Product overview Type number Package JEDEC PNP complement Package configuration NXP JEITA PDTC123JE SOT416 SC-75 - PDTA123JE ultra small PDTC123JM SOT883 SC-101 - PDTA123JM leadless ultra small PDTC123JT SOT23 - TO-236AB PDTA123JT small PDTC123JU SOT323 SC-70 - very small PDTA123JU 1.2 Features and benefits 100 mA output current capability Built-in bias resistors Simplifies circuit design Reduces component count Reduces pick and place costs AEC-Q101 qualified 1.3 Applications Digital application in automotive and industrial segments Control of IC inputs Cost-saving alternative for BC847/857 series in digital applications Switching loads 1.4 Quick reference data Table 2. Quick reference data Symbol Parameter Conditions open base Min Typ Max Unit VCEO collector-emitter voltage - - 50 V IO output current - - 100 mA R1 bias resistor 1 (input) 1.54 2.20 2.86 k R2/R1 bias resistor ratio 17 21 26 PDTC123J series NXP Semiconductors NPN resistor-equipped transistors; R1 = 2.2 k, R2 = 47 k 2. Pinning information Table 3. Pinning Pin Description Simplified outline Graphic symbol SOT23; SOT323; SOT416 1 input (base) 2 GND (emitter) 3 3 3 R1 output (collector) 1 R2 1 2 2 006aaa144 sym007 SOT883 1 input (base) 2 GND (emitter) 3 1 3 3 2 output (collector) R1 1 Transparent top view R2 2 sym007 3. Ordering information Table 4. Ordering information Type number Package Name Description Version PDTC123JE SC-75 plastic surface-mounted package; 3 leads SOT416 PDTC123JM SC-101 leadless ultra small plastic package; 3 solder lands; SOT883 body 1.0 0.6 0.5 mm PDTC123JT - plastic surface-mounted package; 3 leads SOT23 PDTC123JU SC-70 plastic surface-mounted package; 3 leads SOT323 4. Marking Table 5. Type number Marking code[1] PDTC123JE 28 PDTC123JM DW PDTC123JT *25 PDTC123JU *49 [1] PDTC123J_SER Product data sheet Marking codes * = placeholder for manufacturing site code. All information provided in this document is subject to legal disclaimers. Rev. 7 — 21 December 2011 © NXP B.V. 2011. All rights reserved. 2 of 17 PDTC123J series NXP Semiconductors NPN resistor-equipped transistors; R1 = 2.2 k, R2 = 47 k 5. Limiting values Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). PDTC123J_SER Product data sheet Symbol Parameter Conditions Min Max Unit VCBO collector-base voltage open emitter - 50 V VCEO collector-emitter voltage open base - 50 V VEBO emitter-base voltage open collector - 10 V VI input voltage positive - +12 V negative - 5 V IO output current - 100 mA ICM peak collector current single pulse; tp 1 ms - 100 mA Ptot total power dissipation Tamb 25 C PDTC123JE (SOT416) [1][2] - 150 mW PDTC123JM (SOT883) [2][3] - 250 mW PDTC123JT (SOT23) [1] - 250 mW PDTC123JU (SOT323) [1] - 200 mW Tj junction temperature - 150 C Tamb ambient temperature 65 +150 C Tstg storage temperature 65 +150 C [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. [2] Reflow soldering is the only recommended soldering method. [3] Device mounted on an FR4 PCB with 70 m copper strip line, standard footprint. All information provided in this document is subject to legal disclaimers. Rev. 7 — 21 December 2011 © NXP B.V. 2011. All rights reserved. 3 of 17 PDTC123J series NXP Semiconductors NPN resistor-equipped transistors; R1 = 2.2 k, R2 = 47 k 006aac778 300 Ptot (mW) (1) (2) 200 (3) 100 0 -75 -25 25 75 125 175 Tamb (°C) (1) SOT23; FR4 PCB, standard footprint SOT883; FR4 PCB with 70 m copper strip line, standard footprint (2) SOT323; FR4 PCB, standard footprint (3) SOT416; FR4 PCB, standard footprint Fig 1. Power derating curves 6. Thermal characteristics Table 7. PDTC123J_SER Product data sheet Thermal characteristics Symbol Parameter Conditions Rth(j-a) thermal resistance from junction to ambient in free air Min Typ Max Unit PDTC123JE (SOT416) [1][2] - - 830 K/W PDTC123JM (SOT883) [2][3] - - 500 K/W PDTC123JT (SOT23) [1] - - 500 K/W PDTC123JU (SOT323) [1] - - 625 K/W [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Reflow soldering is the only recommended soldering method. [3] Device mounted on an FR4 PCB with 70 m copper strip line, standard footprint. All information provided in this document is subject to legal disclaimers. Rev. 7 — 21 December 2011 © NXP B.V. 2011. All rights reserved. 4 of 17 PDTC123J series NXP Semiconductors NPN resistor-equipped transistors; R1 = 2.2 k, R2 = 47 k 006aac781 103 duty cycle = 1 Zth(j-a) (K/W) 0.75 0.5 0.33 0.2 102 0.1 0.05 0.02 10 0.01 0 1 10-5 10-4 10-3 10-2 10-1 1 10 102 103 tp (s) FR4 PCB, standard footprint Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration for PDTC123JE (SOT416); typical values 006aac782 103 Zth(j-a) (K/W) duty cycle = 1 0.75 0.5 102 0.33 0.2 0.1 0.05 10 0.02 0.01 0 1 10-5 10-4 10-3 10-2 10-1 1 10 102 103 tp (s) FR4 PCB, 70 m copper strip line Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration for PDTC123JM (SOT883); typical values PDTC123J_SER Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 7 — 21 December 2011 © NXP B.V. 2011. All rights reserved. 5 of 17 PDTC123J series NXP Semiconductors NPN resistor-equipped transistors; R1 = 2.2 k, R2 = 47 k 006aac779 103 duty cycle = 1 Zth(j-a) (K/W) 0.75 0.5 0.33 102 0.2 0.1 0.05 0.02 10 0.01 0 1 10-5 10-4 10-3 10-2 10-1 1 10 102 103 tp (s) FR4 PCB, standard footprint Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration for PDTC123JT (SOT23); typical values 006aac780 103 duty cycle = 1 Zth(j-a) (K/W) 0.75 0.5 0.33 102 0.2 0.1 0.05 0.02 10 0.01 0 1 10-5 10-4 10-3 10-2 10-1 1 10 102 103 tp (s) FR4 PCB, standard footprint Fig 5. Transient thermal impedance from junction to ambient as a function of pulse duration for PDTC123JU (SOT323); typical values PDTC123J_SER Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 7 — 21 December 2011 © NXP B.V. 2011. All rights reserved. 6 of 17 PDTC123J series NXP Semiconductors NPN resistor-equipped transistors; R1 = 2.2 k, R2 = 47 k 7. Characteristics Table 8. Characteristics Tamb = 25 C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit ICBO collector-base cut-off current VCB = 50 V; IE = 0 A - - 100 nA ICEO collector-emitter cut-off current VCE = 30 V; IB = 0 A - - 1 A VCE = 30 V; IB = 0 A; Tj = 150 C - - 5 A IEBO emitter-base cut-off current VEB = 5 V; IC = 0 A - - 180 A hFE DC current gain VCE = 5 V; IC = 10 mA 100 - - VCEsat collector-emitter saturation voltage IC = 5 mA; IB = 0.25 mA - - 100 mV VI(off) off-state input voltage VCE = 5 V; IC = 100 A - 0.6 0.5 V VI(on) on-state input voltage VCE = 0.3 V; IC = 5 mA 1.1 0.75 - V R1 bias resistor 1 (input) 1.54 2.20 2.86 k R2/R1 bias resistor ratio 17 21 26 Cc collector capacitance VCB = 10 V; IE = ie = 0 A; f = 1 MHz - - 2.5 pF fT transition frequency - 230 - MHz [1] PDTC123J_SER Product data sheet VCE = 5 V; IC = 10 mA; f = 100 MHz [1] Characteristics of built-in transistor. All information provided in this document is subject to legal disclaimers. Rev. 7 — 21 December 2011 © NXP B.V. 2011. All rights reserved. 7 of 17 PDTC123J series NXP Semiconductors NPN resistor-equipped transistors; R1 = 2.2 k, R2 = 47 k 006aac805 103 hFE 006aac810 1 (1) (2) VCEsat (V) (3) 102 10-1 (1) (2) 10 (3) 1 10-1 1 102 10 10-2 10-1 1 IC (mA) VCE = 5 V IC/IB = 20 (1) Tamb = 100 C (1) Tamb = 100 C (2) Tamb = 25 C (2) Tamb = 25 C (3) Tamb = 40 C (3) Tamb = 40 C Fig 6. DC current gain as a function of collector current; typical values Fig 7. 006aac811 10 102 10 IC (mA) Collector-emitter saturation voltage as a function of collector current; typical values 006aac812 1 (1) (2) VI(on) (V) VI(off) (V) (3) (1) 1 (2) (3) 10-1 10-1 1 102 10 10-1 10-1 IC (mA) VCE = 0.3 V VCE = 5 V (1) Tamb = 40 C (2) Tamb = 25 C (2) Tamb = 25 C (3) Tamb = 100 C (3) Tamb = 100 C On-state input voltage as a function of collector current; typical values PDTC123J_SER Product data sheet 10 IC (mA) (1) Tamb = 40 C Fig 8. 1 Fig 9. Off-state input voltage as a function of collector current; typical values All information provided in this document is subject to legal disclaimers. Rev. 7 — 21 December 2011 © NXP B.V. 2011. All rights reserved. 8 of 17 PDTC123J series NXP Semiconductors NPN resistor-equipped transistors; R1 = 2.2 k, R2 = 47 k 006aac813 3 Cc (pF) 006aac757 103 fT (MHz) 2 102 1 0 0 10 20 30 40 50 VCB (V) f = 1 MHz; Tamb = 25 C 10 10-1 1 102 10 IC (mA) VCE = 5 V; Tamb = 25 C Fig 10. Collector capacitance as a function of collector-base voltage; typical values Fig 11. Transition frequency as a function of collector current; typical values of built-in transistor 8. Test information 8.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. PDTC123J_SER Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 7 — 21 December 2011 © NXP B.V. 2011. All rights reserved. 9 of 17 PDTC123J series NXP Semiconductors NPN resistor-equipped transistors; R1 = 2.2 k, R2 = 47 k 9. Package outline 0.62 0.55 0.55 0.47 0.95 0.60 1.8 1.4 3 0.45 0.15 0.50 0.46 3 0.30 0.22 1.75 0.9 1.45 0.7 1.02 0.95 0.65 1 0.30 0.22 2 0.30 0.15 0.25 0.10 2 1 0.20 0.12 1 0.35 Dimensions in mm 04-11-04 Fig 12. Package outline PDTC123JE (SOT416/SC-75) 3.0 2.8 Dimensions in mm 03-04-03 Fig 13. Package outline PDTC123JM (SOT883/SC-101) 1.1 0.9 2.2 1.8 1.1 0.8 0.45 0.15 3 3 0.45 0.15 2.5 1.4 2.1 1.2 2.2 1.35 2.0 1.15 1 1 2 0.48 0.38 1.9 Dimensions in mm 0.25 0.10 1.3 04-11-04 Fig 14. Package outline PDTC123JT (SOT23) 2 0.4 0.3 0.15 0.09 Dimensions in mm 04-11-04 Fig 15. Package outline PDTC123JU (SOT323/SC-70) 10. Packing information Table 9. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number Product data sheet Description 4 mm pitch, 8 mm tape and reel Packing quantity 3000 10000 -115 -135 PDTC123JE SOT416 PDTC123JM SOT883 2 mm pitch, 8 mm tape and reel - -315 PDTC123JT SOT23 4 mm pitch, 8 mm tape and reel -215 -235 PDTC123JU SOT323 4 mm pitch, 8 mm tape and reel -115 -135 [1] PDTC123J_SER Package For further information and the availability of packing methods, see Section 14. All information provided in this document is subject to legal disclaimers. Rev. 7 — 21 December 2011 © NXP B.V. 2011. All rights reserved. 10 of 17 PDTC123J series NXP Semiconductors NPN resistor-equipped transistors; R1 = 2.2 k, R2 = 47 k 11. Soldering 2.2 1.7 solder lands solder resist 1 0.85 2 solder paste 0.5 (3×) occupied area Dimensions in mm 0.6 (3×) 1.3 sot416_fr Reflow soldering is the only recommended soldering method. Fig 16. Reflow soldering footprint PDTC123JE (SOT416/SC-75) 1.3 0.7 R0.05 (12×) solder lands solder resist 0.9 0.6 0.7 solder paste 0.25 (2×) occupied area 0.3 (2×) 0.3 0.4 (2×) 0.4 Dimensions in mm sot883_fr Reflow soldering is the only recommended soldering method. Fig 17. Reflow soldering footprint PDTC123JM (SOT883/SC-101) PDTC123J_SER Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 7 — 21 December 2011 © NXP B.V. 2011. All rights reserved. 11 of 17 PDTC123J series NXP Semiconductors NPN resistor-equipped transistors; R1 = 2.2 k, R2 = 47 k 3.3 2.9 1.9 solder lands solder resist 3 2 1.7 solder paste occupied area 0.6 (3×) 0.7 (3×) Dimensions in mm 0.5 (3×) 0.6 (3×) 1 sot023_fr Fig 18. Reflow soldering footprint PDTC123JT (SOT23) 2.2 1.2 (2×) 1.4 (2×) solder lands 4.6 solder resist 2.6 occupied area Dimensions in mm 1.4 preferred transport direction during soldering 2.8 4.5 sot023_fw Fig 19. Wave soldering footprint PDTC123JT (SOT23) PDTC123J_SER Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 7 — 21 December 2011 © NXP B.V. 2011. All rights reserved. 12 of 17 PDTC123J series NXP Semiconductors NPN resistor-equipped transistors; R1 = 2.2 k, R2 = 47 k 2.65 1.85 1.325 solder lands solder resist 2 2.35 0.6 (3×) 3 solder paste 1.3 1 occupied area 0.5 (3×) Dimensions in mm 0.55 (3×) sot323_fr Fig 20. Reflow soldering footprint PDTC123JU (SOT323/SC-70) 4.6 2.575 1.425 (3×) solder lands solder resist occupied area 1.8 3.65 2.1 09 (2×) Dimensions in mm preferred transport direction during soldering sot323_fw Fig 21. Wave soldering footprint PDTC123JU (SOT323/SC-70) PDTC123J_SER Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 7 — 21 December 2011 © NXP B.V. 2011. All rights reserved. 13 of 17 PDTC123J series NXP Semiconductors NPN resistor-equipped transistors; R1 = 2.2 k, R2 = 47 k 12. Revision history Table 10. Revision history Document ID Release date Data sheet status Change notice Supersedes PDTC123J_SER v.7 20111221 Product data sheet - PDTC123J_SER v.6 Modifications: • Figure 3 and 5: corrected PDTC123J_SER v.6 20111215 Product data sheet - PDTC123J_SERIES v.5 PDTC123J_SERIES v.5 20040813 Product data sheet - PDTC123J_SERIES v.4 PDTC123J_SERIES v.4 20030410 Product specification - - PDTC123J_SER Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 7 — 21 December 2011 © NXP B.V. 2011. All rights reserved. 14 of 17 PDTC123J series NXP Semiconductors NPN resistor-equipped transistors; R1 = 2.2 k, R2 = 47 k 13. Legal information 13.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 13.2 Definitions Draft — The document is a draft version only. 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This document supersedes and replaces all information supplied prior to the publication hereof. PDTC123J_SER Product data sheet Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors and its suppliers accept no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 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Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. All information provided in this document is subject to legal disclaimers. Rev. 7 — 21 December 2011 © NXP B.V. 2011. All rights reserved. 15 of 17 PDTC123J series NXP Semiconductors NPN resistor-equipped transistors; R1 = 2.2 k, R2 = 47 k Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 13.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 14. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] PDTC123J_SER Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 7 — 21 December 2011 © NXP B.V. 2011. All rights reserved. 16 of 17 PDTC123J series NXP Semiconductors NPN resistor-equipped transistors; R1 = 2.2 k, R2 = 47 k 15. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 8.1 9 10 11 12 13 13.1 13.2 13.3 13.4 14 15 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 9 Quality information . . . . . . . . . . . . . . . . . . . . . . 9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10 Packing information . . . . . . . . . . . . . . . . . . . . 10 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 14 Legal information. . . . . . . . . . . . . . . . . . . . . . . 15 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 15 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Contact information. . . . . . . . . . . . . . . . . . . . . 16 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 21 December 2011 Document identifier: PDTC123J_SER