DF N1 01 0B -6 PQMD10 NPN/PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 47 kΩ 4 November 2015 Product data sheet 1. General description NPN/PNP double Resistor-Equipped Transistors (RET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package. NPN/NPN complement: PQMH10 2. Features and benefits • • • • • • • 100 mA output current capability Built-in bias resistors Simplifies circuit design Low package height of 0.37 mm Reduces component count Reduces pick and place costs AEC-Q101 qualified 3. Applications • • • • Low current peripheral driver Control of IC inputs Replaces general-purpose transistors in digital applications Mobile applications 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit - - 50 V - - 100 mA [1] 1.54 2.2 2.86 kΩ [1] 17 21 26 Per transistor; for the PNP transistor with negative polarity VCEO collector-emitter voltage IO output current open base Per transistor; for the PNP transistor with negative polarity R1 bias resistor 1 R2/R1 bias resistor ratio [1] Tamb = 25 °C See section "Test information" for resistor calculation and test conditions. Scan or click this QR code to view the latest information for this product PQMD10 NXP Semiconductors NPN/PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 47 kΩ 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 GND1 Simplified outline Graphic symbol GND (emitter) TR1 O1 1 2 I1 input ( base) TR1 3 O2 output (collector) TR2 4 GND2 GND (emitter) TR2 5 I2 input ( base) TR2 6 O1 output (collector) TR1 Transparent top view 7 O1 output (collector) TR1 DFN1010B-6 (SOT1216) 8 O2 output (collector) TR2 7 2 3 R1 5 8 I2 GND2 6 4 R2 TR2 TR1 R2 GND1 R1 I1 O2 aaa-007379 6. Ordering information Table 3. Ordering information Type number PQMD10 PQMD10 Product data sheet Package Name Description Version DFN1010B-6 DFN1010B-6: plastic thermal enhanced ultra thin small outline package; no leads; 6 terminals SOT1216 All information provided in this document is subject to legal disclaimers. 4 November 2015 © NXP Semiconductors N.V. 2015. All rights reserved 2 / 17 PQMD10 NXP Semiconductors NPN/PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 47 kΩ 7. Marking Table 4. Marking codes Type number Marking code PQMD10 B 010 MARKING CODE (EXAMPLE) READING DIRECTION MARK-FREE AREA PIN 1 INDICATION MARK READING EXAMPLE: YEAR DATE CODE A 110 VENDOR CODE Fig. 1. aaa-019766 DFN1010B-6 (SOT1216) binary marking code description PQMD10 Product data sheet All information provided in this document is subject to legal disclaimers. 4 November 2015 © NXP Semiconductors N.V. 2015. All rights reserved 3 / 17 PQMD10 NXP Semiconductors NPN/PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 47 kΩ 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Per transistor; for the PNP transistor with negative polarity VCBO collector-base voltage open emitter - 50 V VCEO collector-emitter voltage open base - 50 V VEBO emitter-base voltage open collector - 5 V VI input voltage TR1; positive - 12 V TR1; negative - -5 V TR2; positive - 5 V TR2; negative - -12 V - 100 mA - 100 mA IO output current ICM peak collector current tp ≤ 1 ms; single pulse Ptot total power dissipation Tamb ≤ 25 °C [1] - 230 mW Ptot total power dissipation Tamb ≤ 25 °C [1] - 350 mW Tj junction temperature - 150 °C Tamb ambient temperature -55 150 °C Tstg storage temperature -65 150 °C Per device [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. aaa-007377 400 Ptot (mW) 300 200 100 0 -75 -25 25 75 125 175 Tamb (°C) FR4 PCB, standard footprint Fig. 2. Per device: Power derating curve PQMD10 Product data sheet All information provided in this document is subject to legal disclaimers. 4 November 2015 © NXP Semiconductors N.V. 2015. All rights reserved 4 / 17 PQMD10 NXP Semiconductors NPN/PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 47 kΩ 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions thermal resistance from junction to ambient in free air thermal resistance from junction to ambient in free air Min Typ Max Unit [1] - - 543 K/W [1] - - 357 K/W Per transistor Rth(j-a) Per device Rth(j-a) [1] 103 Zth(j-a) (K/W) Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. aaa-007378 duty cycle = 0.75 1 0.5 0.33 0.2 102 0.1 0.05 10 0.02 0.01 0 1 10-5 10-4 10-3 10-2 10-1 1 10 102 tp (s) 103 FR4 PCB, standard footprint Fig. 3. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PQMD10 Product data sheet All information provided in this document is subject to legal disclaimers. 4 November 2015 © NXP Semiconductors N.V. 2015. All rights reserved 5 / 17 PQMD10 NXP Semiconductors NPN/PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 47 kΩ 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit - - 100 nA Per transistor; for the PNP transistor with negative polarity ICBO collector-base cut-off current (emitter open) VCB = 50 V; IE = 0 A; Tamb = 25 °C ICEO collector-emitter cut-off VCE = 30 V; IB = 0 A; Tamb = 25 °C current (base open) VCE = 30 V; IB = 0 A; Tamb = 150 °C - - 1 µA - - 5 µA IEBO emitter-base cut-off VEB = 5 V; IC = 0 A; Tamb = 25 °C current (collector open) - - 180 µA hFE DC current gain VCE = 5 V; IC = 10 mA; Tamb = 25 °C 100 - - VCEsat collector-emitter saturation voltage IC = 5 mA; IB = 0.25 mA; Tamb = 25 °C - - 100 mV VI(off) off-state input voltage VCE = 5 V; IC = 100 µA; Tamb = 25 °C - 0.6 0.5 V VI(on) on-state input voltage VCE = 0.3 V; IC = 5 mA; Tamb = 25 °C 1.1 0.75 - V R1 bias resistor 1 Tamb = 25 °C [1] 1.54 2.2 2.86 kΩ R2/R1 bias resistor ratio [1] 17 21 26 CC collector capacitance - - 2.5 pF - - 3 pF [2] - 230 - MHz [2] - 180 - MHz VCB = 10 V; IE = 0 A; f = 1 MHz; Tamb = 25 °C; TR1 (NPN) VCB = -10 V; IE = 0 A; f = 1 MHz; Tamb = 25 °C; TR2 (PNP) fT transition frequency VCE = 5 V; IC = 10 mA; f = 100 MHz; Tamb = 25 °C; TR1 (NPN) VCE = -5 V; IC = -10 mA; f = 100 MHz; Tamb = 25 °C; TR2 (PNP) [1] [2] PQMD10 Product data sheet See section "Test information" for resistor calculation and test conditions. Characteristics of built-in transistor All information provided in this document is subject to legal disclaimers. 4 November 2015 © NXP Semiconductors N.V. 2015. All rights reserved 6 / 17 PQMD10 NXP Semiconductors NPN/PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 47 kΩ 006aac805 103 hFE aaa-018580 0.1 0.60 mA 0.54 mA 0.48 mA IC (A) (1) 0.08 (2) 0.42 mA (3) 102 0.36 mA 0.30 mA 0.06 0.24 mA 0.04 0.18 mA 10 0.12 mA 0.02 IB = 0.06 mA 1 10-1 1 10 IC (mA) 0 102 VCE = 5 V 1 2 Fig. 5. (2) Tamb = 25 °C 4 VCE (V) 5 NPN transistor: Collector current as a function of collector-emitter voltage; typical values (3) Tamb = -40 °C NPN transistor: DC current gain as a function of collector current; typical values aaa-018584 1 006aac811 10 VCEsat (V) VI(on) (V) 10-1 1 (1) (2) (1) (2) (3) 10-2 10-1 Fig. 6. 3 Tamb = 25 °C (1) Tamb = 100 °C Fig. 4. 0 1 (3) 10 IC (mA) 10-1 10-1 102 1 IC/IB = 20 VCE = 0.3 V (1) Tamb = 100 °C (1) Tamb = -40 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = -40 °C (3) Tamb = 100 °C NPN transistor: Collector-emitter saturation voltage as a function of collector current; typical values PQMD10 Product data sheet Fig. 7. IC (mA) 102 NPN transistor: On-state input voltage as a function of collector current; typical values All information provided in this document is subject to legal disclaimers. 4 November 2015 10 © NXP Semiconductors N.V. 2015. All rights reserved 7 / 17 PQMD10 NXP Semiconductors NPN/PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 47 kΩ 006aac812 1 Cc (pF) (2) VI(off) (V) 006aac813 3 (1) (3) 2 1 10-1 10-1 1 IC (mA) 0 10 VCE = 5 V 10 20 30 40 50 VCB (V) f = 1 MHz; Tamb = 25 °C (1) Tamb = -40 °C Fig. 9. (2) Tamb = 25 °C NPN transistor: Collector capacitance as a function of collector-base voltage; typical values (3) Tamb = 100 °C Fig. 8. 0 NPN transistor: Off-state input voltage as a function of collector current; typical values 006aac757 103 006aac814 103 (1) hFE (2) fT (MHz) (3) 102 102 10 10 10-1 1 10 IC (mA) 1 -10-1 102 VCE = 5 V; Tamb = 25 °C -1 -10 IC (mA) -102 VCE = -5 V (1) Tamb = 100 °C Fig. 10. NPN transistor: Transition frequency as a function of collector current; typical values of built-in transistor (2) Tamb = 25 °C (3) Tamb = -40 °C Fig. 11. PNP transistor: DC current gain as a function of collector current; typical values PQMD10 Product data sheet All information provided in this document is subject to legal disclaimers. 4 November 2015 © NXP Semiconductors N.V. 2015. All rights reserved 8 / 17 PQMD10 NXP Semiconductors NPN/PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 47 kΩ aaa-018916 -0.1 IC (A) -0.08 aaa-018913 -1 -0.80 mA -0.72 mA -0.64 mA VCEsat (V) -0.56 mA -0.48 mA -0.40 mA -0.06 -0.32 mA -10-1 -0.24 mA -0.04 (1) (2) -0.16 mA (3) -0.02 IB = -0.08 mA 0 0 -1 -2 -3 -4 VCE (V) -10-2 -10-1 -5 Tamb = 25 °C -1 -10 IC (mA) -102 IC/IB = 20 (1) Tamb = 100 °C Fig. 12. PNP transistor: Collector current as a function of collector-emitter voltage; typical values (2) Tamb = 25 °C (3) Tamb = -40 °C Fig. 13. PNP transistor: Collector-emitter saturation voltage as a function of collector current; typical values 006aac816 -10 006aac817 -1 VI(on) (V) (1) (2) VI(off) (V) (3) (1) -1 (2) (3) -10-1 -10-1 -1 -10 IC (mA) -10-1 -10-1 -102 VCE = -0.3 V VCE = -5 V (1) Tamb = -40 °C (1) Tamb = -40 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = 100 °C (3) Tamb = 100 °C Fig. 14. PNP transistor: On-state input voltage as a function of collector current; typical values PQMD10 Product data sheet -1 IC (mA) -10 Fig. 15. PNP transistor: Off-state input voltage as a function of collector current; typical values All information provided in this document is subject to legal disclaimers. 4 November 2015 © NXP Semiconductors N.V. 2015. All rights reserved 9 / 17 PQMD10 NXP Semiconductors NPN/PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 47 kΩ 006aac818 9 006aac763 103 Cc (pF) fT (MHz) 6 102 3 0 0 -10 -20 -30 10 -10-1 -40 -50 VCB (V) f = 1 MHz; Tamb = 25 °C -1 -10 IC (mA) -102 VCE = -5 V; Tamb = 25 °C Fig. 16. PNP transistor: Collector capacitance as a function of collector-base voltage; typical values Fig. 17. PNP transistor: Transition frequency as a function of collector current; typical values of built-in transistor 11. Test information 11.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. 11.2 Resistor calculation • Calculation of bias resistor 1 (R1) • PQMD10 Product data sheet Calculation of bias resistor ratio (R2/R1) All information provided in this document is subject to legal disclaimers. 4 November 2015 © NXP Semiconductors N.V. 2015. All rights reserved 10 / 17 PQMD10 NXP Semiconductors NPN/PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 47 kΩ n.c. II1; II2 R1 II3; II4 R2 GND aaa-020082 Fig. 18. NPN transistor: Resistor test circuit n.c. II1; II2 R1 II3; II4 R2 GND aaa-020083 Fig. 19. PNP transistor: Resistor test circuit 11.3 Resistor test conditions Table 8. Resistor test conditions Per transistor; for the PNP transistor with negative polarity R1 (kΩ) 2.2 PQMD10 Product data sheet R2 (kΩ) 47 Test conditions II1 II2 II3 II4 90 μA 140 μA -55 μA -105 μA All information provided in this document is subject to legal disclaimers. 4 November 2015 © NXP Semiconductors N.V. 2015. All rights reserved 11 / 17 PQMD10 NXP Semiconductors NPN/PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 47 kΩ 12. Package outline 0.35 0.35 0.15 0.23 1 3 0.125 0.205 0.22 0.30 0.95 1.05 6 0.04 max 2 0.34 0.40 Dimensions in mm 5 4 0.32 0.40 0.275 0.275 1.05 1.15 13-03-05 Fig. 20. Package outline DFN1010B-6 (SOT1216) PQMD10 Product data sheet All information provided in this document is subject to legal disclaimers. 4 November 2015 © NXP Semiconductors N.V. 2015. All rights reserved 12 / 17 PQMD10 NXP Semiconductors NPN/PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 47 kΩ 13. Soldering Footprint information for reflow soldering of DFN1010B-6 package SOT1216 0.9 0.35 0.35 0.15 0.2 (6x) 0.15 1.3 1.2 0.35 0.25 0.5 0.6 0.35 0.25 1.1 0.3 (6x) 1 1.35 solder land solder land plus solder paste occupied area solder resist Dimensions in mm Issue date 13-03-06 14-07-28 sot1216_fr Fig. 21. Reflow soldering footprint for DFN1010B-6 (SOT1216) PQMD10 Product data sheet All information provided in this document is subject to legal disclaimers. 4 November 2015 © NXP Semiconductors N.V. 2015. All rights reserved 13 / 17 PQMD10 NXP Semiconductors NPN/PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 47 kΩ 14. Revision history Table 9. Revision history Data sheet ID Release date Data sheet status Change notice Supersedes PQMD10 v.1 20151104 Product data sheet - - PQMD10 Product data sheet All information provided in this document is subject to legal disclaimers. 4 November 2015 © NXP Semiconductors N.V. 2015. All rights reserved 14 / 17 PQMD10 NXP Semiconductors NPN/PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 47 kΩ In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. 15. Legal information 15.1 Data sheet status Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. Document status [1][2] Product status [3] Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] [2] [3] Definition Please consult the most recently issued document before initiating or completing a design. The term 'short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 15.2 Definitions Preview — The document is a preview version only. The document is still subject to formal approval, which may result in modifications or additions. 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NXP Semiconductors and its suppliers accept no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. 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Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. All information provided in this document is subject to legal disclaimers. 4 November 2015 © NXP Semiconductors N.V. 2015. All rights reserved 15 / 17 PQMD10 NXP Semiconductors NPN/PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 47 kΩ No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. 15.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. Bitsound, CoolFlux, CoReUse, DESFire, FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE, ITEC, MIFARE, MIFARE Plus, MIFARE Ultralight, SmartXA, STARplug, TOPFET, TrenchMOS, TriMedia and UCODE — are trademarks of NXP Semiconductors N.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. PQMD10 Product data sheet All information provided in this document is subject to legal disclaimers. 4 November 2015 © NXP Semiconductors N.V. 2015. All rights reserved 16 / 17 PQMD10 NXP Semiconductors NPN/PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 47 kΩ 16. Contents 1 General description ............................................... 1 2 Features and benefits ............................................1 3 Applications ........................................................... 1 4 Quick reference data ............................................. 1 5 Pinning information ............................................... 2 6 Ordering information ............................................. 2 7 Marking ................................................................... 3 8 Limiting values .......................................................4 9 Thermal characteristics .........................................5 10 Characteristics ....................................................... 6 11 11.1 11.2 11.3 Test information ................................................... 10 Quality information ............................................. 10 Resistor calculation ............................................ 10 Resistor test conditions ...................................... 11 12 Package outline ................................................... 12 13 Soldering .............................................................. 13 14 Revision history ................................................... 14 15 15.1 15.2 15.3 15.4 Legal information .................................................15 Data sheet status ............................................... 15 Definitions ...........................................................15 Disclaimers .........................................................15 Trademarks ........................................................ 16 © NXP Semiconductors N.V. 2015. All rights reserved For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 4 November 2015 PQMD10 Product data sheet All information provided in this document is subject to legal disclaimers. 4 November 2015 © NXP Semiconductors N.V. 2015. All rights reserved 17 / 17