ACS541MS Radiation Hardened Octal Buffer/ Line Driver Three-State January 1996 Features Pinouts • Devices QML Qualified in Accordance with MIL-PRF-38535 20 LEAD CERAMIC DUAL-IN-LINE MIL-STD-1835 DESIGNATOR, CDIP2-T20, LEAD FINISH C TOP VIEW • Detailed Electrical and Screening Requirements are Contained in SMD# 5962-96710 and Intersil’s QM Plan • 1.25 Micron Radiation Hardened SOS CMOS • Total Dose . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . >300K RAD (Si) OE1 1 20 VCC • Single Event Upset (SEU) Immunity: <1 x 10-10 Errors/Bit/Day (Typ) A0 2 19 OE2 A1 3 18 Y0 • SEU LET Threshold . . . . . . . . . . . . . . . . . . . . . . . >100 MEV-cm /mg A2 4 17 Y1 • Dose Rate Upset . . . . . . . . . . . . . . . . >1011 RAD (Si)/s, 20ns Pulse A3 5 16 Y2 A4 6 15 Y3 • Latch-Up Free Under Any Conditions A5 7 14 Y4 • Military Temperature Range . . . . . . . . . . . . . . . . . . -55oC to +125oC A6 8 13 Y5 • Significant Power Reduction Compared to ALSTTL Logic A7 9 12 Y6 GND 10 11 Y7 2 12 • Dose Rate Survivability . . . . . . . . . . . >10 RAD (Si)/s, 20ns Pulse • DC Operating Voltage Range . . . . . . . . . . . . . . . . . . . . 4.5V to 5.5V • Input Logic Levels - VIL = 30% of VCC Max - VIH = 70% of VCC Min 20 LEAD CERAMIC FLATPACK MIL-STD-1835 DESIGNATOR, CDFP4-F20, LEAD FINISH C TOP VIEW • Input Current ≤ 1µA at VOL, VOH • Fast Propagation Delay . . . . . . . . . . . . . . . . 17ns (Max), 12ns (Typ) Description The Intersil ACS541MS is a Radiation Hardened Octal Buffer/Line Driver, with three-state outputs. The output enable pins OE1, OE2 control the Three-State outputs. If either enable is high the output will be in a high impedance state. For data output both enables must be low. The ACS541MS utilizes advanced CMOS/SOS technology to achieve high-speed operation. This device is a member of a radiation hardened, high-speed, CMOS/SOS Logic family. The ACS541MS is supplied in a 20 lead Ceramic Flatpack (K suffix) or a Ceramic Dual-In-Line package (D suffix). OE1 1 20 VCC A0 2 19 OE2 A1 3 18 Y0 A2 4 17 Y1 A3 5 16 Y2 A4 6 15 Y3 A5 7 14 Y4 A6 8 13 Y5 A7 9 12 Y6 10 11 Y7 GND Ordering Information PART NUMBER TEMPERATURE RANGE SCREENING LEVEL PACKAGE 5962F9671001VRC -55oC to +125oC MIL-PRF-38535 Class V 20 Lead SBDIP 5962F9671001VXC -55oC to +125oC MIL-PRF-38535 Class V 20 Lead Ceramic Flatpack ACS541D/Sample 25oC Sample 20 Lead SBDIP ACS541K/Sample 25oC Sample 20 Lead Ceramic Flatpack ACS541HMSR 25oC Die Die CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999 1 518856 File Number 4085 Spec Number ACS541MS Functional Diagram VCC 2 18 A0 OE1 OE2 Y0 1 GND VCC 19 3 17 A1 Y1 GND VCC 4 16 A2 Y2 GND VCC 5 15 A3 Y3 GND VCC 6 14 A4 Y4 GND VCC 7 13 A5 Y5 GND VCC 8 12 A6 Y6 GND VCC 9 GND VCC A7 11 Y7 10 20 GND TRUTH TABLE INPUTS OUTPUTS OE1 OE2 An Yn L L H H L L L L H X X Z X H X Z NOTE: L = Low Logic Level, H = High Logic Level, Z = High Impedance All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site http://www.intersil.com Spec Number 2 518856 ACS541MS Die Characteristics DIE DIMENSIONS: 102 mils x 102 mils 2,600mm x 2,600mm METALLIZATION: Type: AlSi Metal 1 Thickness: 7.125kÅ ±1.125kÅ Metal 2 Thickness: 9kÅ ±1kÅ GLASSIVATION: Type: SiO2 Thickness: 8kÅ ±1kÅ WORST CASE CURRENT DENSITY: <2.0 x 105 A/cm2 BOND PAD SIZE: > 4.3 mils x 4.3 mils > 110µm x 110µm Metallization Mask Layout (18) YO (19) OE2 (20) VCC (1) OE1 (2) A0 (3) A1 ACS541MS A2 (4) (17) Y1 A3 (5) (16) Y2 NC NC NC NC Y5 (13) GND (10) Y6 (12) (14) Y4 Y7 (11) A5 (7) A7 (9) (15) Y3 A6 (8) A4 (6) Spec Number 3 518856