SSF11NS65UF
Main Product Characteristics:
VDSS
650V
RDS(on)
0.32Ω (typ.)
ID
11A
TO-220F
Marking and pin
Schematic diagram
Assignment
Features and Benefits:
Feathers:
High dv/dt and avalanche capabilities
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
Description:
The SSF11NS65UF series MOSFETs is a new technology, which combines an innovative super
junction technology and advance process. This new technology achieves low Rdson, energy saving,
high reliability and uniformity, superior power density and space saving.
Absolute max Rating:
Symbol
Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V①
11
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V①
7
IDM
Pulsed Drain Current②
44
Power Dissipation③
31
W
Linear Derating Factor
0.25
W/°C
VDS
Drain-Source Voltage
650
V
VGS
Gate-to-Source Voltage
± 30
V
EAS
Single Pulse Avalanche Energy @ L=133mH
250
mJ
IAS
Avalanche Current @ L=133mH
1.94
A
-55 to +150
°C
PD @TC = 25°C
TJ
TSTG
Operating Junction and Storage Temperature Range
©Silikron Semiconductor CO.,LTD.
2013.08.15
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Version : 1.2
A
page 1 of 8
SSF11NS65UF
Thermal Resistance
Symbol
Characterizes
Typ.
Max.
Units
RθJC
Junction-to-case③
—
4.0
℃/W
RθJA
Junction-to-ambient (t ≤ 10s) ④
—
80
℃/W
Electrical Characterizes @TA=25℃ unless otherwise specified
Symbol
Parameter
Min.
V(BR)DSS
Drain-to-Source breakdown voltage
RDS(on)
Static Drain-to-Source on-resistance
VGS(th)
Gate threshold voltage
IDSS
Drain-to-Source leakage current
IGSS
Gate-to-Source forward leakage
Qg
Typ.
Max.
Units
V
650
—
—
—
0.32
0.38
—
0.72
—
2
—
4
—
2.1
—
—
—
1
—
—
50
—
—
100
—
—
-100
Total gate charge
—
22
—
Qgs
Gate-to-Source charge
—
4.3
—
Qgd
Gate-to-Drain("Miller") charge
—
8
—
td(on)
Turn-on delay time
—
11
—
tr
Rise time
—
6
—
td(off)
Turn-Off delay time
—
29
—
tf
Fall time
—
6
—
Ciss
Input capacitance
—
804
—
Coss
Output capacitance
—
34
—
Crss
Reverse transfer capacitance
—
3.4
—
Conditions
VGS = 0V, ID = 1mA
VGS=10V,ID = 3.2A
Ω
TJ = 125°C
VDS = VGS, ID = 0.32mA
V
TJ = 125°C
VDS =650V,VGS = 0V
μA
TJ = 125°C
VGS =30V
nA
VGS = -30V
ID= 6A,
nC
VDS= 200V,
VGS = 10V
VGS=10V, VDS=400V,
ns
RL=81.6Ω,RGEN=3.4Ω
ID=4.9A
VGS = 0V
pF
VDS = 100V
ƒ = 600KHz
Source-Drain Ratings and Characteristics
Symbol
IS
ISM
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Min.
Typ.
Max.
Units
—
—
11
A
—
—
44
A
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
VSD
Diode Forward Voltage
—
0.82
1.2
V
IS=4.9A, VGS=0V
trr
Reverse Recovery Time
—
247
—
ns
TJ = 25°C, IF =11A,
Qrr
Reverse Recovery Charge
—
2.46
—
μC
di/dt = 100A/μs
©Silikron Semiconductor CO.,LTD.
2013.08.15
www.silikron.com
Version : 1.2
page 2 of 8
SSF11NS65UF
Test circuits and Waveforms
EAS Test Circuit:
Gate charge test circuit:
Switching Time Test Circuit:
Switching Waveforms:
Notes:
①Calculated continuous current based on maximum allowable junction temperature.
②Repetitive rating; pulse width limited by max. junction temperature.
③The power dissipation PD is based on max. junction temperature, using junction-to-case thermal
resistance.
④The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a
still air environment with TA =25°C
©Silikron Semiconductor CO.,LTD.
2013.08.15
www.silikron.com
Version : 1.2
page 3 of 8
SSF11NS65UF
Typical electrical and thermal characteristics
Figure 2. Gate to source cut-off voltage
Figure 1: Typical Output Characteristics
Figure 3. Drain-to-Source Breakdown Voltage Vs.
Case Temperature
©Silikron Semiconductor CO.,LTD.
Figure 4: Normalized On-Resistance Vs. Case
Temperature
2013.08.15
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Version : 1.2
page 4 of 8
SSF11NS65UF
Typical electrical and thermal characteristics
Figure 5. Maximum Drain Current Vs. Case
Figure 6. Typical Capacitance Vs. Drain-to-Source
Temperature
Voltage
Figure7. Drain-to-Source Voltage Vs. Gate-to-Source Voltage
Figure8. Maximum Effective Transient Thermal Impedance,
Junction-to-Case
©Silikron Semiconductor CO.,LTD.
2013.08.15
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Version : 1.2
page 5 of 8
SSF11NS65UF
Mechanical Data：
TO220F PACKAGE OUTLINE DIMENSION_GN
Symbol
E
E1
E2
A
A1
A2
A3
c
D
D1
H1
e
ФP
ФP1
ФP2
ФP3
L
L1
L2
Q1
Q2
b1
b2
b3
Dimension In Millimeters
Min
Nom
Max
9.960
10.160
10.360
9.840
10.040
10.240
6.800
7.000
7.200
4.600
4.700
4.800
2.440
2.540
2.640
2.660
2.760
2.860
0.600
0.700
0.800
0.500
15.780
15.870
15.980
8.970
9.170
9.370
6.500
6.700
6.800
2.54BSC
3.080
3.180
3.280
1.400
1.500
1.600
0.900
1.000
1.100
0.100
0.200
0.300
12.780
12.980
13.180
2.970
3.170
3.370
0.830
0.930
1.030
3o
5o
7o
o
o
43
45
47o
1.180
1.280
1.380
0.760
0.800
0.840
1.420
©Silikron Semiconductor CO.,LTD.
2013.08.15
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Min
0.392
0.387
0.268
0.181
0.096
0.105
0.024
0.621
0.353
0.256
0.121
0.055
0.035
0.004
0.503
0.117
0.033
3o
43o
0.046
0.030
-
Dimension In Inches
Nom
0.400
0.395
0.276
0.185
0.100
0.109
0.028
0.020
0.625
0.361
0.264
0.10BSC
0.125
0.059
0.039
0.008
0.511
0.125
0.037
5o
45o
0.050
0.031
-
Version : 1.2
Max
0.408
0.403
0.283
0.189
0.104
0.113
0.031
0.629
0.369
0.268
0.129
0.063
0.043
0.012
0.519
0.133
0.041
7o
47o
0.054
0.033
0.056
page 6 of 8
SSF11NS65UF
Ordering and Marking Information
Device Marking: SSF11NS65UF
Package (Available)
TO-220F
Operating Temperature Range
C : -55 to 150 ºC
Devices per Unit
Package
Type
Units/
Tube
Tubes/Inner
Box
Units/Inner Inner
Box
Boxes/Carton
Box
Units/Carton
Box
TO-220F
50
20
1000
6000
6
Reliability Test Program
Test Item
Conditions
Duration
Sample Size
High
Temperature
Reverse
Bias(HTRB)
High
Temperature
Gate
Bias(HTGB)
Tj=125℃ to 150℃ @
80% of Max
VDSS/VCES/VR
168 hours
500 hours
1000 hours
3 lots x 77 devices
Tj=150℃@ 100% of
Max VGSS
168 hours
500 hours
1000 hours
3 lots x 77 devices
©Silikron Semiconductor CO.,LTD.
2013.08.15
www.silikron.com
Version : 1.2
page 7 of 8
SSF11NS65UF
ATTENTION:
■
■
■
■
■
■
■
■
Any and all Silikron products described or contained herein do not have specifications that can handle applications
that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other
applications whose failure can be reasonably expected to result in serious physical and/or material damage.
Consult with your Silikron representative nearest you before using any Silikron products described or contained
herein in such applications.
Silikron assumes no responsibility for equipment failures that result from using products at values that exceed,
even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed
in products specifications of any and all Silikron products described or contained herein.
Specifications of any and all Silikron products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees of the
performance, characteristics, and functions of the described products as mounted in the customer’s products or
equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer
should always evaluate and test devices mounted in the customer’s products or equipment.
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Worldwide Sales and Service:
[email protected]
Technical Support:
[email protected]
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TEL: (86-512) 62560688
FAX: (86-512) 65160705
E-mail: [email protected]
©Silikron Semiconductor CO.,LTD.
2013.08.15
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Version : 1.2
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