SSF11NS60F
Main Product Characteristics:
VDSS
600V
RDS(on)
0.36Ω (typ.)
ID
11A
TO220F
Features and Benefits:
Marking and pin
Schematic diagram
Assignment
Feathers:
High dv/dt and avalanche capabilities
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
Description:
The SSF11NS60F series MOSFETs is a new technology, which combines an innovative super junction
technology and advance process. This new technology achieves low Rdson, energy saving, high
reliability and uniformity, superior power density and space saving.
Absolute max Rating:
Symbol
Parameter
Max.
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V①
11
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V①
7
IDM
Pulsed Drain Current②
44
Units
A
Power Dissipation③
32.8
W
Linear Derating Factor
0.26
W/°C
VDS
Drain-Source Voltage
600
V
VGS
Gate-to-Source Voltage
± 30
V
EAS
Single Pulse Avalanche Energy @ L=22.5mH
281
mJ
IAS
Avalanche Current @ L=22.5mH
5
A
-55 to +150
°C
PD @TC = 25°C
TJ
TSTG
Operating Junction and Storage Temperature Range
©Silikron Semiconductor CO.,LTD.
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page 1 of 8
SSF11NS60F
Thermal Resistance
Symbol
Characterizes
Typ.
Max.
Units
RθJC
Junction-to-case③
—
3.8
℃/W
RθJA
Junction-to-ambient (t ≤ 10s) ④
—
80
℃/W
Electrical Characterizes @TA=25℃ unless otherwise specified
Symbol
Parameter
Min.
V(BR)DSS
Drain-to-Source breakdown voltage
RDS(on)
Static Drain-to-Source on-resistance
VGS(th)
Gate threshold voltage
IDSS
Drain-to-Source leakage current
IGSS
Gate-to-Source forward leakage
Qg
Typ.
Max.
Units
V
Conditions
600
—
—
VGS = 0V, ID = 250μA
—
0.36
0.41
—
0.88
—
2
—
4
—
2.46
—
—
—
1
—
—
50
—
—
100
—
—
-100
Total gate charge
—
28.41
—
Qgs
Gate-to-Source charge
—
6.64
—
Qgd
Gate-to-Drain("Miller") charge
—
12.34
—
VGS = 10V
td(on)
Turn-on delay time
—
12.85
—
VGS=10V, VDS=300V,
tr
Rise time
—
9.45
—
td(off)
Turn-Off delay time
—
30.40
—
tf
Fall time
—
6.30
—
ID=5.5A
Ciss
Input capacitance
—
824.8
—
VGS = 0V
Coss
Output capacitance
—
78.06
—
Crss
Reverse transfer capacitance
—
2.75
—
VGS=10V,ID = 5.5A
Ω
TJ = 125℃
VDS = VGS, ID = 250μA
V
TJ = 125℃
VDS =600V,VGS = 0V
μA
TJ = 125°C
VGS =30V
nA
VGS = -30V
ID = 11A,
nC
VDS=480V,
RL=54.5Ω,
ns
RGEN=4.7Ω
pF
VDS = 50V
ƒ = 600KHz
Source-Drain Ratings and Characteristics
Symbol
IS
ISM
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Min.
Typ.
Max.
Units
—
—
11
A
—
—
44
A
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
VSD
Diode Forward Voltage
—
—
1.5
V
IS=11A, VGS=0V
trr
Reverse Recovery Time
—
313
—
ns
TJ = 25°C, IF =11A, di/dt =
Qrr
Reverse Recovery Charge
—
2.97
—
uC
100A/μs
©Silikron Semiconductor CO.,LTD.
2013.04.15
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Version : 1.4
page 2 of 8
SSF11NS60F
Test circuits and Waveforms
Switch Waveforms:
Notes:
①Calculated continuous current based on maximum allowable junction temperature.
②Repetitive rating; pulse width limited by max. junction temperature.
③The power dissipation PD is based on max. junction temperature, using junction-to-case thermal
resistance.
④The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a
still air environment with TA =25°C
©Silikron Semiconductor CO.,LTD.
2013.04.15
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Version : 1.4
page 3 of 8
SSF11NS60F
Typical electrical and thermal characteristics
Figure 1:
Figure 2. Typ. Gate to source cut-off voltage
Power dissipation
Figure 3. Typ. gate charge
©Silikron Semiconductor CO.,LTD.
Figure 4: Typ. Capacitances
2013.04.15
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page 4 of 8
SSF11NS60F
Typical electrical and thermal characteristics
Figure 5. Drain-source breakdown voltage
©Silikron Semiconductor CO.,LTD.
Figure 6. Drain-source on-state resistance
2013.04.15
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page 5 of 8
SSF11NS60F
Mechanical Data：
TO220F PACKAGE OUTLINE DIMENSION_GN
Symbol
E
E1
E2
A
A1
A2
A3
c
D
D1
H1
e
ФP
ФP1
ФP2
ФP3
L
L1
L2
Q1
Q2
b1
b2
b3
Dimension In Millimeters
Min
Nom
Max
9.960
10.160
10.360
9.840
10.040
10.240
6.800
7.000
7.200
4.600
4.700
4.800
2.440
2.540
2.640
2.660
2.760
2.860
0.600
0.700
0.800
0.500
15.780
15.870
15.980
8.970
9.170
9.370
6.500
6.700
6.800
2.54BSC
3.080
3.180
3.280
1.400
1.500
1.600
0.900
1.000
1.100
0.100
0.200
0.300
12.780
12.980
13.180
2.970
3.170
3.370
0.830
0.930
1.030
3o
5o
7o
o
o
43
45
47o
1.180
1.280
1.380
0.760
0.800
0.840
1.420
©Silikron Semiconductor CO.,LTD.
2013.04.15
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Min
0.392
0.387
0.268
0.181
0.096
0.105
0.024
0.621
0.353
0.256
0.121
0.055
0.035
0.004
0.503
0.117
0.033
3o
43o
0.046
0.030
-
Dimension In Inches
Nom
0.400
0.395
0.276
0.185
0.100
0.109
0.028
0.020
0.625
0.361
0.264
0.10BSC
0.125
0.059
0.039
0.008
0.511
0.125
0.037
5o
45o
0.050
0.031
-
Version : 1.4
Max
0.408
0.403
0.283
0.189
0.104
0.113
0.031
0.629
0.369
0.268
0.129
0.063
0.043
0.012
0.519
0.133
0.041
7o
47o
0.054
0.033
0.056
page 6 of 8
SSF11NS60F
Ordering and Marking Information
Device Marking: SSF11NS60F
Package (Available)
TO220F
Operating Temperature Range
C : -55 to 150 ºC
Devices per Unit
Package
Type
TO220F
Units/
Tube
Tubes/Inner
Box
50
20
Units/Inner Inner
Box
Boxes/Carton
Box
1000
6
Units/Carton
Box
6000
Reliability Test Program
Test Item
Conditions
Duration
Sample Size
High
Temperature
Reverse
Bias(HTRB)
High
Temperature
Gate
Bias(HTGB)
Tj=125℃ to 150℃ @
80% of Max
VDSS/VCES/VR
168 hours
500 hours
1000 hours
3 lots x 77 devices
Tj=150℃@ 100% of
Max VGSS
168 hours
500 hours
1000 hours
3 lots x 77 devices
©Silikron Semiconductor CO.,LTD.
2013.04.15
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Version : 1.4
page 7 of 8
SSF11NS60F
ATTENTION:
■
■
■
■
■
■
■
■
■
Any and all Silikron products described or contained herein do not have specifications that can handle applications
that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other
applications whose failure can be reasonably expected to result in serious physical and/or material damage.
Consult with your Silikron representative nearest you before using any Silikron products described or contained
herein in such applications.
Silikron assumes no responsibility for equipment failures that result from using products at values that exceed,
even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed
in products specifications of any and all Silikron products described or contained herein.
Specifications of any and all Silikron products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees of the
performance, characteristics, and functions of the described products as mounted in the customer’s products or
equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer
should always evaluate and test devices mounted in the customer’s products or equipment.
Silikron Semiconductor CO.,LTD. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to
accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause
damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or
events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for
safe design, redundant design, and structural design.
In the event that any or all Silikron products(including technical data, services) described or contained herein are
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without obtaining the export license from the authorities concerned in accordance with the above law.
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written permission of Silikron Semiconductor CO.,LTD.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for
volume production. Silikron believes information herein is accurate and reliable, but no guarantees are made or
implied regarding its use or any infringements of intellectual property rights or other rights of third parties.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
Silikron product that you intend to use.
This catalog provides information as of Dec, 2008. Specifications and information herein are subject to change
without notice.
Customer Service
Worldwide Sales and Service:
[email protected]
Technical Support:
[email protected]
Suzhou Silikron Semiconductor Corp.
11A, 428 Xinglong Street, Suzhou Industrial Park, P.R.China
TEL: (86-512) 62560688
FAX: (86-512) 65160705
E-mail: [email protected]
©Silikron Semiconductor CO.,LTD.
2013.04.15
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Version : 1.4
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