SSS1206
Main Product Characteristics
VDSS
120V
RDS(on)
4mΩ (typ.)
ID
180A ①
TO-220
Features and Benefits
Marking and pin
Schematic diagram
Assignment
Advanced Process Technology
Special designed for PWM, load switching and
general purpose applications
Ultra low on-resistance with low gate charge
Fast switching and reverse body recovery
175℃ operating temperature
Description
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with
high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable
device for use in power switching application and a wide variety of other applications.
Absolute max Rating
Symbol
Parameter
Max.
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
180 ①
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V
130 ①
IDM
Pulsed Drain Current ②
670
Power Dissipation ③
375
W
Linear Derating Factor
2.5
W/°C
VDS
Drain-Source Voltage
120
V
VGS
Gate-to-Source Voltage
± 20
V
EAS
Single Pulse Avalanche Energy @ L=0.3mH
1045
mJ
IAS
Avalanche Current @ L=0.3mH
83.5
A
-55 to +175
°C
PD @TC = 25°C
TJ
TSTG
Operating Junction and Storage Temperature Range
©Silikron Semiconductor CO.,LTD.
2012.10.24
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Version : 1.0
Units
A
page 1 of 8
SSS1206
Thermal Resistance
Symbol
Characterizes
RθJC
RθJA
Typ.
Max.
Units
Junction-to-case ③
—
0.4
°C/W
Junction-to-ambient (t ≤ 10s) ④
—
62
°C/W
Junction-to-Ambient (PCB mounted, steady-state) ④
—
40
°C/W
Electrical Characterizes @TA=25℃ unless otherwise specified
Symbol
Parameter
Min.
Typ.
Max.
Units
V(BR)DSS
Drain-to-Source breakdown voltage
120
—
—
V
RDS(on)
Static Drain-to-Source on-resistance
—
4.0
6.0
—
9.0
—
VGS(th)
Gate threshold voltage
2.0
—
4
—
2.2
—
IDSS
Drain-to-Source leakage current
—
—
1
—
—
50
IGSS
Gate-to-Source forward leakage
—
—
100
—
—
-100
Qg
Total gate charge
—
224
—
Qgs
Gate-to-Source charge
—
80
—
Qgd
Gate-to-Drain("Miller") charge
—
55
—
VGS = 10V
td(on)
Turn-on delay time
—
40
—
VGS=10V, VDD =65V,
tr
Rise time
—
141
—
td(off)
Turn-Off delay time
—
95
—
tf
Fall time
—
101
—
ID =75A
Ciss
Input capacitance
—
5634
—
VGS = 0V
Coss
Output capacitance
—
657
—
Crss
Reverse transfer capacitance
—
12.6
—
mΩ
V
μA
nA
Conditions
VGS = 0V, ID= 1mA
VGS=10V,ID =75A
TJ = 125°C
VDS = VGS, ID =250μA
TJ = 125°C
VDS =120V,VGS = 0V
TJ = 125°C
VGS =20V
VGS = -20V
ID = 50A,
nC
nS
pF
VDS=50V,
RL=0.87Ω,
RGEN=2.6Ω
VDS = 50V
ƒ = 1MHz
Source-Drain Ratings and Characteristics
Symbol
IS
ISM
VSD
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
©Silikron Semiconductor CO.,LTD.
Min.
Typ.
Max.
Units
—
—
180 ①
A
—
—
670
A
—
0.9
1.3
V
2012.10.24
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Conditions
MOSFET symbol
showing
the
integral reverse
p-n junction diode.
IS=75A, VGS=0V, TJ = 25°C
page 2 of 8
SSS1206
Test circuits and Waveforms
Switch Waveforms:
Notes:
①Calculated continuous current based on maximum allowable junction temperature. Package
limitation current is 75A.
②Repetitive rating; pulse width limited by max. junction temperature.
③The power dissipation PD is based on max. junction temperature, using junction-to-case thermal
resistance.
④The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a
still air environment with TA =25°C
©Silikron Semiconductor CO.,LTD.
2012.10.24
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Version : 1.0
page 3 of 8
SSS1206
Typical electrical and thermal characteristics
Figure 2. Gate to source cut-off voltage
Figure 1: Typical Output Characteristics
Figure 3. Drain-to-Source Breakdown Voltage Vs.
Case Temperature
©Silikron Semiconductor CO.,LTD.
Figure 4: Normalized On-Resistance Vs. Case
Temperature
2012.10.24
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SSS1206
Typical electrical and thermal characteristics
Figure 5. Maximum Drain Current Vs. Case
Figure 6.Typical Capacitance Vs. Drain-to-Source
Temperature
Voltage
Case Temperature
Figure7. Maximum Effective Transient Thermal Impedance, Junction-to-Case
©Silikron Semiconductor CO.,LTD.
2012.10.24
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Version : 1.0
page 5 of 8
SSS1206
Mechanical Data：
TO220 PACKAGE OUTLINE DIMENSION_GN
Symbol
A
A1
A2
b
b1
b2
C
D
D1
D2
E
E1
ФP
ФP1
e
e1
L
L1
L2
L3
L4
Q1
Dimension In Millimeters
Min
Nom
Max
4.400
4.550
4.700
1.270
1.300
1.330
2.240
2.340
2.440
1.270
1.270
1.370
1.470
0.750
0.800
0.850
0.480
0.500
0.520
15.100
15.400
15.700
8.800
8.900
9.000
2.730
2.800
2.870
9.900
10.000
10.100
8.700
3.570
3.600
3.630
1.400
1.500
1.600
2.54BSC
5.08BSC
13.150
13.360
13.570
7.35REF
Dimension In Inches
Nom
Max
0.179
0.185
0.051
0.052
0.092
0.096
0.050
0.054
0.058
0.031
0.033
0.020
0.021
0.606
0.618
0.350
0.354
0.110
0.113
0.394
0.398
0.343
0.142
0.143
0.059
0.063
0.1BSC
0.2BSC
0.518
0.526
0.534
0.29REF
Min
0.173
0.050
0.088
0.050
0.030
0.019
0.594
0.346
0.107
0.390
0.141
0.055
2.900
1.650
3.000
1.750
3.100
1.850
0.114
0.065
0.118
0.069
0.122
0.073
0.900
1.000
1.100
0.035
0.039
0.043
0
5
0
7
0
9
5
0
0
90
7
Q2
Q3
0
5
50
0
7
70
0
9
90
0
5
50
0
7
70
90
90
Q4
10
30
50
10
30
50
©Silikron Semiconductor CO.,LTD.
2012.10.24
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Version : 1.0
page 6 of 8
SSS1206
Ordering and Marking Information
Device Marking: SSS1206
Package (Available)
TO220
Operating Temperature Range
C : -55 to 175 ºC
Devices per Unit
Package
Type
Units/
Tube
Tubes/Inner
Box
Units/Inner Inner
Box
Boxes/Carton
Box
Units/Carton
Box
TO220
50
20
1000
6000
6
Reliability Test Program
Test Item
Conditions
Duration
Sample Size
High
Temperature
Reverse
Bias(HTRB)
High
Temperature
Gate
Bias(HTGB)
Tj=125℃ to 175℃ @
80% of Max
VDSS/VCES/VR
168 hours
500 hours
1000 hours
3 lots x 77 devices
Tj=125℃ or 175℃ @
100% of Max VGSS
168 hours
500 hours
1000 hours
3 lots x 77 devices
©Silikron Semiconductor CO.,LTD.
2012.10.24
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Version : 1.0
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SSS1206
ATTENTION:
■
■
■
■
■
■
■
■
■
Any and all Silikron products described or contained herein do not have specifications that can handle applications
that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other
applications whose failure can be reasonably expected to result in serious physical and/or material damage.
Consult with your Silikron representative nearest you before using any Silikron products described or contained
herein in such applications.
Silikron assumes no responsibility for equipment failures that result from using products at values that exceed,
even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed
in products specifications of any and all Silikron products described or contained herein.
Specifications of any and all Silikron products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees of the
performance, characteristics, and functions of the described products as mounted in the customer’s products or
equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer
should always evaluate and test devices mounted in the customer’s products or equipment.
Silikron Semiconductor CO.,LTD. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to
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events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for
safe design, redundant design, and structural design.
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implied regarding its use or any infringements of intellectual property rights or other rights of third parties.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
Silikron product that you intend to use.
This catalog provides information as of Dec, 2008. Specifications and information herein are subject to change
without notice.
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Worldwide Sales and Service:
[email protected]
Technical Support:
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E-mail: [email protected]
©Silikron Semiconductor CO.,LTD.
2012.10.24
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Version : 1.0
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