SSF8N80 Main Product Characteristics: VDSS 800V RDS(on) 1.38Ω(typ.) ID 8A TO-220 Schematic diagram Assignment Features and Benefits: Marking and pin Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 150℃ operating temperature Description: It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications. Absolute max Rating: Symbol Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V① 8 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V① 5.1 IDM Pulsed Drain Current② 32 Power Dissipation③ 178 W Linear Derating Factor 1.43 W/°C VDS Drain-Source Voltage 800 V VGS Gate-to-Source Voltage ± 30 V EAS Single Pulse Avalanche Energy @ L=25mH 512 mJ IAS Avalanche Current @ L=25mH 6.4 A -55 to + 150 °C PD @TC = 25°C TJ TSTG Operating Junction and Storage Temperature Range ©Silikron Semiconductor CO.,LTD. 2012.04.28 www.silikron.com Version : 1.1 A page 1 of 8 SSF8N80 Thermal Resistance Symbol Characterizes Typ. Max. Units RθJC Junction-to-case③ — 0.7 ℃/W RθJA Junction-to-ambient (t ≤ 10s) ④ — 62.5 ℃/W Electrical Characterizes @TA=25℃ unless otherwise specified Symbol Parameter Min. V(BR)DSS Drain-to-Source breakdown voltage RDS(on) Static Drain-to-Source on-resistance VGS(th) Gate threshold voltage IDSS Drain-to-Source leakage current IGSS Gate-to-Source forward leakage Qg Typ. Max. Units V 800 — — — 1.38 1.55 — 3.16 — 2 — 4 — 1.96 — — — 1 — — 50 — — 100 — — -100 Total gate charge — 24 — Qgs Gate-to-Source charge — 7.3 — Qgd Gate-to-Drain("Miller") charge — 9.4 — td(on) Turn-on delay time — 20 — tr Rise time — 40 — td(off) Turn-Off delay time — 57 — tf Fall time — 35 — Ciss Input capacitance — 1107 — Coss Output capacitance — 120 — Crss Reverse transfer capacitance — 4.7 — Ω V μA nA Conditions VGS = 0V, ID = 250μA VGS=10V,ID = 3.5A TJ = 125℃ VDS = VGS, ID = 250μA TJ = 125℃ VDS = 800V,VGS = 0V TJ = 125℃ VGS =30V VGS = -30V ID = 8A, nC VDS= 380V, VGS = 10V VGS=10V, VDS=400V, ns RL=50Ω,RGEN=25Ω ID=8A VGS = 0V pF VDS = 25V ƒ = 1MHz Source-Drain Ratings and Characteristics Symbol IS ISM Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Min. Typ. Max. Units — — 8 A — — 32 A Conditions MOSFET symbol showing the integral reverse p-n junction diode. VSD Diode Forward Voltage — 0.87 1.4 V IS=7A, VGS=0V trr Reverse Recovery Time — 1015 — ns TJ = 25°C, IF =8A, di/dt = Qrr Reverse Recovery Charge — 5414 — nC 100A/μs ©Silikron Semiconductor CO.,LTD. 2012.04.28 www.silikron.com Version : 1.1 page 2 of 8 SSF8N80 Test circuits and Waveforms Switch Waveforms: Notes: ①The maximum current rating is limited by bond-wires. ②Repetitive rating; pulse width limited by max. junction temperature. ③The power dissipation PD is based on max. junction temperature, using junction-to-case thermal resistance. ④The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C ©Silikron Semiconductor CO.,LTD. 2012.04.28 www.silikron.com Version : 1.1 page 3 of 8 SSF8N80 Typical electrical and thermal characteristics Figure 2. Gate to source cut-off voltage Figure 1: Typical Output Characteristics Figure 3. Drain-to-Source Breakdown Voltage Vs. Case Temperature ©Silikron Semiconductor CO.,LTD. Figure 4: Normalized On-Resistance Vs. Case Temperature 2012.04.28 www.silikron.com Version : 1.1 page 4 of 8 SSF8N80 Typical electrical and thermal characteristics Figure 5. Maximum Drain Current Vs. Case Figure 6.Typical Capacitance Vs. Drain-to-Source Temperature Voltage Case Temperature Figure7. Maximum Effective Transient Thermal Impedance, Junction-to-Case ©Silikron Semiconductor CO.,LTD. 2012.04.28 www.silikron.com Version : 1.1 page 5 of 8 SSF8N80 Mechanical Data: TO220 PACKAGE OUTLINE DIMENSION_GN Symbol A A1 A2 b b1 b2 C D D1 D2 E E1 ФP ФP1 e e1 L L1 L2 L3 Dimension In Millimeters Min Nom Max 4.400 4.550 4.700 1.270 1.300 1.330 2.240 2.340 2.440 1.270 1.270 1.370 1.470 0.750 0.800 0.850 0.480 0.500 0.520 15.100 15.400 15.700 8.800 8.900 9.000 2.730 2.800 2.870 9.900 10.000 10.100 8.700 3.570 3.600 3.630 1.400 1.500 1.600 2.54BSC 5.08BSC 13.150 13.360 13.570 7.35REF Dimension In Inches Nom Max 0.179 0.185 0.051 0.052 0.092 0.096 0.050 0.054 0.058 0.031 0.033 0.020 0.021 0.606 0.618 0.350 0.354 0.110 0.113 0.394 0.398 0.343 0.142 0.143 0.059 0.063 0.1BSC 0.2BSC 0.518 0.526 0.534 0.29REF Min 0.173 0.050 0.088 0.050 0.030 0.019 0.594 0.346 0.107 0.390 0.141 0.055 2.900 1.650 3.000 1.750 3.100 1.850 0.114 0.065 0.118 0.069 0.122 0.073 0.900 1.000 1.100 0.035 0.039 0.043 50 70 90 50 70 90 Q2 Q3 0 5 50 0 7 70 0 9 90 0 5 50 0 7 70 90 90 Q4 10 30 50 10 30 50 L4 Q1 ©Silikron Semiconductor CO.,LTD. 2012.04.28 www.silikron.com Version : 1.1 page 6 of 8 SSF8N80 Ordering and Marking Information Device Marking: SSF8N80 Package (Available) TO220 Operating Temperature Range C : -55 to 150 ºC Devices per Unit Package Type Units/ Tube Tubes/Inner Box Units/Inner Inner Box Boxes/Carton Box Units/Carton Box TO220 50 20 1000 6000 6 Reliability Test Program Test Item Conditions Duration Sample Size High Temperature Reverse Bias(HTRB) High Temperature Gate Bias(HTGB) Tj=125℃ to 150℃ @ 80% of Max VDSS/VCES/VR 168 hours 500 hours 1000 hours 3 lots x 77 devices Tj=150℃ @ 100% of Max VGSS 168 hours 500 hours 1000 hours 3 lots x 77 devices ©Silikron Semiconductor CO.,LTD. 2012.04.28 www.silikron.com Version : 1.1 page 7 of 8 SSF8N80 ATTENTION: ■ ■ ■ ■ ■ ■ ■ ■ ■ Any and all Silikron products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your Silikron representative nearest you before using any Silikron products described or contained herein in such applications. Silikron assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all Silikron products described or contained herein. Specifications of any and all Silikron products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment. Silikron Semiconductor CO.,LTD. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all Silikron products(including technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of Silikron Semiconductor CO.,LTD. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. Silikron believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the Silikron product that you intend to use. This catalog provides information as of Dec, 2008. Specifications and information herein are subject to change without notice. Customer Service Worldwide Sales and Service: [email protected] Technical Support: [email protected] Suzhou Silikron Semiconductor Corp. 11A, 428 Xinglong Street, Suzhou Industrial Park, P.R.China TEL: (86-512) 62560688 FAX: (86-512) 65160705 E-mail: [email protected] ©Silikron Semiconductor CO.,LTD. 2012.04.28 www.silikron.com Version : 1.1 page 8 of 8