Main Product Characteristics:
VDSS
40V
RDS(on)
2.4mΩ(typ.)
ID
200A ①
SSFT4003/SSFT4003A TO-220
SSFT4003
TO-263
Schematic diagram SSFT4003A
Features and Benefits:
Advanced MOSFET process technology
Special designed for PWM, load switching and
general purpose applications
Ultra low on-resistance with low gate charge
Fast switching and reverse body recovery
175℃ operating temperature
Description:
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with
high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable
device for use in power switching application and a wide variety of other applications. Absolute max Rating:
Symbol
Parameter
Max.
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
200①
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V
135①
IDM
Pulsed Drain Current②
750
Power Dissipation③
220
W
Linear Derating Factor
1.5
W/°C
VDS
Drain-Source Voltage
40
V
VGS
Gate-to-Source Voltage
± 24
V
EAS
Single Pulse Avalanche Energy @ L=0.3mH
912
mJ
IAS
Avalanche Current @ L=0.3mH
78
A
TJ TSTG
Operating Junction and Storage Temperature Range
-55 to +175
°C
PD @TC = 25°C
©Silikron Semiconductor CO., LTD.
2012.09.17
www.silikron.com Version: 2.1
Units
A
page 1 of 9
SSFT4003/SSFT4003A Thermal Resistance
Symbol
Characterizes
RθJC
RθJA
Typ.
Max.
Units
Junction-to-case③
—
0.62
℃/W
Junction-to-ambient (t ≤ 10s) ④
—
60
℃/W
Junction-to-Ambient (PCB mounted, steady-state) ④
—
40
℃/W
Electrical Characterizes @TA=25℃ unless otherwise specified
Symbol
Parameter
Min.
Typ.
Max.
Units
V(BR)DSS
Drain-to-Source breakdown voltage
RDS(on)
Static Drain-to-Source on-resistance
40
—
—
V
—
2.4
3.5
—
4.1
—
VGS(th)
Gate threshold voltage
2
—
4
—
2.0
—
IDSS
Drain-to-Source leakage current
—
—
1
—
—
50
IGSS
Gate-to-Source forward leakage
— — 100
— — -100
Qg
Total gate charge
— 104
—
Qgs
Gate-to-Source charge
— 16
—
Qgd
Gate-to-Drain("Miller") charge
— 40
—
VGS = 10V
td(on)
Turn-on delay time
— 21.4
—
VGS=10V, VDS =20V,
tr
Rise time
— 57.8
—
td(off)
Turn-Off delay time
— 48.7
—
mΩ
V
μA
nA
Conditions
VGS = 0V, ID = 250μA
VGS=10V,ID = 30A
TJ = 125℃
VDS = VGS, ID = 250μA
TJ = 125℃
VDS = 40V,VGS = 0V
TJ = 125°C
VGS =24V
VGS = -24V
ID = 75A,
nC
ns
VDS 32V,
RL=0.26Ω,
RGEN=3.0Ω，
tf
Fall time
— 19.9
—
ID = 75A
Ciss
Input capacitance
— 7615
—
VGS = 0V,
Coss
Output capacitance
— 959
—
Crss
Reverse transfer capacitance
— 342
—
pF
VDS = 25V,
ƒ = 1MHz
Source-Drain Ratings and Characteristics
Symbol
IS
ISM
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Min.
Typ.
Max.
Units
—
—
200 ①
A
—
—
750
A
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
VSD
Diode Forward Voltage
—
0.86
1.3
V
IS=30A, VGS=0V
trr
Reverse Recovery Time
—
29.6
—
ns
TJ = 25°C, IF =50A, di/dt =
Qrr
Reverse Recovery Charge
—
22.2
—
nC
100A/μs
©Silikron Semiconductor CO., LTD.
2012.09.17
www.silikron.com Version: 2.1
page 2 of 9
SSFT4003/SSFT4003A Test circuits and Waveforms
Switch Waveforms:
Notes:
①Calculated continuous current based on maximum allowable junction temperature. Package
limitation current is 75A.
②Repetitive rating; pulse width limited by max junction temperature.
③The power dissipation PD is based on max junction temperature, using junction-to-case thermal
resistance.
④The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a
still air environment with TA =25°C
©Silikron Semiconductor CO., LTD.
2012.09.17
www.silikron.com Version: 2.1
page 3 of 9
SSFT4003/SSFT4003A Typical electrical and thermal characteristics
Figure 1: Typical Output Characteristics Figure 3. Drain-to-Source Breakdown Voltage Vs.
Figure 2. Gate to source cut‐off voltage
Case Temperature
©Silikron Semiconductor CO., LTD.
2012.09.17
www.silikron.com Figure 4: Normalized On-Resistance Vs. Case
Temperature
Version: 2.1
page 4 of 9
SSFT4003/SSFT4003A Typical electrical and thermal characteristics Figure 5. Maximum Drain Current Vs. Case
Temperature
Figure 6.Typical Capacitance Vs. Drain-to-Source
Voltage
Figure7. Maximum Effective Transient Thermal Impedance, Junction-to-Case
©Silikron Semiconductor CO., LTD.
2012.09.17
www.silikron.com Version: 2.1
page 5 of 9
SSFT4003/SSFT4003A Mechanical Data：
TO220 PACKAGE OUTLINE DIMENSION_GN
Symbol
A
A1
A2
b
b1
b2
C
D
D1
D2
E
E1
ФP
ФP1
e
e1
L
L1
L2
L3
L4
Q1
Q2
Q3
Q4
Dimension In Millimeters
Min
Nom
Max
4.400
4.550
4.700
1.270
1.300
1.330
2.240
2.340
2.440
1.270
1.270
1.370
1.470
0.750
0.800
0.850
0.480
0.500
0.520
15.100
15.400
15.700
8.800
8.900
9.000
2.730
2.800
2.870
9.900
10.000
10.100
8.700
3.570
3.600
3.630
1.400
1.500
1.600
2.54BSC
5.08BSC
13.150
13.360
13.570
7.35REF
Dimension In Inches
Nom
Max
0.179
0.185
0.051
0.052
0.092
0.096
0.050
0.054
0.058
0.031
0.033
0.020
0.021
0.606
0.618
0.350
0.354
0.110
0.113
0.394
0.398
0.343
0.142
0.143
0.059
0.063
0.1BSC
0.2BSC
0.518
0.526
0.534
0.29REF
Min
0.173
0.050
0.088
0.050
0.030
0.019
0.594
0.346
0.107
0.390
0.141
0.055
2.900
1.650
0.900
3.000
1.750
1.000
3.100
1.850
1.100
0.114
0.065
0.035
0.118
0.069
0.039
0.122
0.073
0.043
50
50
50
70
70
70
90
90
90
50
50
50
70
70
70
90
90
90
10
30
50
10
30
50
©Silikron Semiconductor CO., LTD.
2012.09.17
www.silikron.com Version: 2.1
page 6 of 9
SSFT4003/SSFT4003A D2PAK PACKAGE OUTLINE DIMENSION
Symbol
A
B
C
D1
D2
D3
E
F
G
H
I
K
a1
a2
Dimension In Millimeters
Min
Max
9.660
10.280
1.020
1.320
8.590
9.400
1.140
1.400
0.700
0.950
5.080 (TYP)
15.090
15.390
1.150
1.400
4.300
4.700
2.290
2.790
0.250 (TYP)
1.300
1.600
0.450
0.650
©Silikron Semiconductor CO., LTD.
00
80
2012.09.17
www.silikron.com Dimension In Inches
Min
Max
0.380
0.405
0.040
0.052
0.338
0.370
0.045
0.055
0.028
0.037
0.200 (TYP)
0.594
0.606
0.045
0.055
0.169
0.185
0.090
0.110
0.010 (TYP)
0.051
0.063
0.018
0.026
10
80
Version: 2.1
page 7 of 9
SSFT4003/SSFT4003A Ordering and Marking Information
Device Marking: SSFT4003 & SSFT4003A
Package (Available)
TO220/TO263
Operating Temperature Range
C : -55 to 175 ºC
Devices per Unit
Package Units/ Tubes/Inner
Type
Tube Box
Units/Inner
Box
TO220
D2PAK
1000
1000
50
50
20
20
Inner
Boxes/Carton
Box
6
6
Units/Carton
Box
6000
6000
Reliability Test Program
Test Item
Conditions
Duration
Sample Size
High
Temperature
Reverse
Bias(HTRB)
High
Temperature
Gate
Bias(HTGB)
Tj=125℃ to 175℃ @
80% of Max
VDSS/VCES/VR
168 hours
500 hours
1000 hours
3 lots x 77 devices
Tj=150℃ or 175℃ @
100% of Max VGSS
168 hours
500 hours
1000 hours
3 lots x 77 devices
©Silikron Semiconductor CO., LTD.
2012.09.17
www.silikron.com Version: 2.1
page 8 of 9
SSFT4003/SSFT4003A ATTENTION:
■
■
■
■
■
■
■
■
■
Any and all Silikron products described or contained herein do not have specifications that can handle applications
that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other
applications whose failure can be reasonably expected to result in serious physical and/or material damage.
Consult with your Silikron representative nearest you before using any Silikron products described or contained
herein in such applications.
Silikron assumes no responsibility for equipment failures that result from using products at values that exceed,
even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed
in products specifications of any and all Silikron products described or contained herein.
Specifications of any and all Silikron products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees of the
performance, characteristics, and functions of the described products as mounted in the customer’s products or
equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer
should always evaluate and test devices mounted in the customer’s products or equipment.
Silikron Semiconductor CO.,LTD. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to
accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause
damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or
events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for
safe design, redundant design, and structural design.
In the event that any or all Silikron products(including technical data, services) described or contained herein are
controlled under any of applicable local export control laws and regulations, such products must not be exported
without obtaining the export license from the authorities concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical,
including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior
written permission of Silikron Semiconductor CO.,LTD.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for
volume production. Silikron believes information herein is accurate and reliable, but no guarantees are made or
implied regarding its use or any infringements of intellectual property rights or other rights of third parties.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
Silikron product that you intend to use.
This catalog provides information as of Dec, 2008. Specifications and information herein are subject to change
without notice.
Customer Service
Worldwide Sales and Service:
[email protected]
Technical Support:
[email protected]
Suzhou Silikron Semiconductor Corp.
11A, 428 Xinglong Street, Suzhou Industrial Park, P.R.China
TEL: (86-512) 62560688
FAX: (86-512) 65160705
E-mail: [email protected]
©Silikron Semiconductor CO., LTD.
2012.09.17
www.silikron.com Version: 2.1
page 9 of 9