SSF6N40D
Main Product Characteristics:
VDSS
400V
RDS(on)
0.85Ω (typ.)
ID
5.5A
TO-252
Schematic diagram
Assignment
Features and Benefits:
Marking and pin
Advanced MOSFET process technology
Special designed for PWM, load switching and
general purpose applications
Ultra low on-resistance with low gate charge
Fast switching and reverse body recovery
150℃ operating temperature
Description:
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with
high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable
device for use in power switching application and a wide variety of other applications.
Absolute max Rating:
Symbol
Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V①
5.5
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V①
3.5
IDM
Pulsed Drain Current②
22
Power Dissipation③
50
W
Linear Derating Factor
0.4
W/°C
VDS
Drain-Source Voltage
400
V
VGS
Gate-to-Source Voltage
± 30
V
EAS
Single Pulse Avalanche Energy @ L=22mH
345
mJ
IAS
Avalanche Current @ L=22mH
5.6
A
-55 to +150
°C
PD @TC = 25°C
TJ
TSTG
Operating Junction and Storage Temperature Range
©Silikron Semiconductor CO.,LTD.
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A
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SSF6N40D
Thermal Resistance
Symbol
Characterizes
Typ.
Max.
Units
RθJC
Junction-to-case③
—
2.5
℃/W
RθJA
Junction-to-ambient (t ≤ 10s) ④
—
110
℃/W
Electrical Characterizes @TA=25℃ unless otherwise specified
Symbol
Parameter
Min.
V(BR)DSS
Drain-to-Source breakdown voltage
RDS(on)
Static Drain-to-Source on-resistance
VGS(th)
Gate threshold voltage
IDSS
Drain-to-Source leakage current
IGSS
Gate-to-Source forward leakage
Qg
Typ.
Max.
Units
V
400
—
—
—
0.85
1.0
—
1.75
—
2
—
4
—
2.25
—
—
—
1
—
—
50
—
—
100
—
—
-100
Total gate charge
—
16.1
—
Qgs
Gate-to-Source charge
—
3.9
—
Qgd
Gate-to-Drain("Miller") charge
—
6.0
—
td(on)
Turn-on delay time
—
11.3
—
tr
Rise time
—
18.0
—
td(off)
Turn-Off delay time
—
37.9
—
tf
Fall time
—
18.9
—
Ciss
Input capacitance
—
643
—
Coss
Output capacitance
—
79.0
—
Crss
Reverse transfer capacitance
—
5.14
—
Ω
V
μA
nA
Conditions
VGS = 0V, ID = 250μA
VGS=10V,ID = 2.75A
TJ = 125℃
VDS = VGS, ID = 250μA
TJ = 125℃
VDS = 400V,VGS = 0V
TJ = 125℃
VGS =30V
VGS = -30V
ID = 5.5A,
nC
VDS=320V,
VGS = 10V
ns
VGS=10V, VDS=200V,
RGEN=25Ω,ID=5.5A
VGS = 0V
pF
VDS = 25V
ƒ = 1MHz
Source-Drain Ratings and Characteristics
Symbol
IS
ISM
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Min.
Typ.
Max.
Units
—
—
5.5
A
—
—
22
A
Conditions
MOSFET symbol
showing
the
integral reverse
p-n junction diode.
VSD
Diode Forward Voltage
—
0.89
1.4
V
IS=5.5A, VGS=0V
trr
Reverse Recovery Time
—
267
—
ns
TJ = 25°C, IF =5.5A,
Qrr
Reverse Recovery Charge
—
1644
—
nC
di/dt = 100A/μs
©Silikron Semiconductor CO.,LTD.
2012.07.12
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SSF6N40D
Test circuits and Waveforms
Switch Waveforms:
Notes:
①The maximum current rating is limited by bond-wires.
②Repetitive rating; pulse width limited by max. junction temperature.
③The power dissipation PD is based on max. junction temperature, using junction-to-case thermal
resistance.
④The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a
still air environment with TA =25°C
©Silikron Semiconductor CO.,LTD.
2012.07.12
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SSF6N40D
Typical electrical and thermal characteristics
Figure 2. Gate to source cut-off voltage
Figure 1. Typical Output Characteristics
Figure 3. Drain-to-Source Breakdown Voltage vs.
Case Temperature
©Silikron Semiconductor CO.,LTD.
Figure 4.Normalized On-Resistance Vs. Case
Temperature
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SSF6N40D
Typical electrical and thermal characteristics
Figure 5. Maximum Drain Current Vs. Case
Figure 6.Typical Capacitance Vs. Drain-to-Source
Temperature
Voltage
Case Temperature
Figure7. Maximum Effective Transient Thermal Impedance, Junction-to-Case
©Silikron Semiconductor CO.,LTD.
2012.07.12
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SSF6N40D
Mechanical Data：
TO-252 PACKAGE OUTLINE DIMENSION
Symbol
A
A1
B
B1
C
D
D1
D2
E
E1
e
H
F
K
V2
Dimension In Millimeters
Min
Nom
Max
2.200
2.300
2.380
0.910
1.010
1.110
0.710
0.760
0.810
5.130
5.330
5.460
0.460
0.510
0.560
6.000
6.100
6.200
5.350 (REF)
2.900 (REF)
6.500
6.600
6.700
4.83 (REF)
2.186
2.286
2.386
9.800
10.100
10.400
1.400
1.500
1.700
1.600 (REF)
©Silikron Semiconductor CO.,LTD.
Min
0.087
0.036
0.028
0.202
0.018
0.236
0.256
0.086
0.386
0.055
80 (REF)
Dimension In Inches
Nom
0.091
0.040
0.030
0.210
0.020
0.240
0.211 (REF)
0.114 (REF)
0.260
0.190 (REF)
0.090
0.398
0.059
0.063 (REF)
Max
0.094
0.044
0.032
0.215
0.022
0.244
0.264
0.094
0.409
0.067
80 (REF)
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SSF6N40D
Ordering and Marking Information
Device Marking: SSF6N40D
Package (Available)
TO-252（DPAK）
Operating Temperature Range
C : -55 to 150 ºC
Devices per Unit
Option1：
Package
Type
TO-252
Option2：
Package
Type
TO-252
Units/Tape Tapes/Inner
Box
2500
2
Units/Tape Tapes/Inner
Box
2500
1
Units/Inner
Box
5000
Units/Inner
Box
2500
Inner
Boxes/Carton
Box
7
Units/Carton
Box
Inner
Boxes/Carton
Box
10
Units/Carton
Box
35000
25000
Reliability Test Program
Test Item
Conditions
Duration
Sample Size
High
Temperature
Reverse
Bias(HTRB)
High
Temperature
Gate
Bias(HTGB)
Tj=125℃ to 150℃ @
80% of Max
VDSS/VCES/VR
168 hours
500 hours
1000 hours
3 lots x 77 devices
Tj=150℃ @ 100% of
Max VGSS
168 hours
500 hours
1000 hours
3 lots x 77 devices
©Silikron Semiconductor CO.,LTD.
2012.07.12
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Version : 1.0
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SSF6N40D
ATTENTION:
■
■
■
■
■
■
■
■
■
Any and all Silikron products described or contained herein do not have specifications that can handle applications
that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other
applications whose failure can be reasonably expected to result in serious physical and/or material damage.
Consult with your Silikron representative nearest you before using any Silikron products described or contained
herein in such applications.
Silikron assumes no responsibility for equipment failures that result from using products at values that exceed,
even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed
in products specifications of any and all Silikron products described or contained herein.
Specifications of any and all Silikron products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees of the
performance, characteristics, and functions of the described products as mounted in the customer’s products or
equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer
should always evaluate and test devices mounted in the customer’s products or equipment.
Silikron Semiconductor CO.,LTD. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to
accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause
damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or
events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for
safe design, redundant design, and structural design.
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Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for
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implied regarding its use or any infringements of intellectual property rights or other rights of third parties.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
Silikron product that you intend to use.
This catalog provides information as of Dec, 2008. Specifications and information herein are subject to change
without notice.
Customer Service
Worldwide Sales and Service:
[email protected]
Technical Support:
[email protected]
Suzhou Silikron Semiconductor Corp.
11A, 428 Xinglong Street, Suzhou Industrial Park, P.R.China
TEL: (86-512) 62560688
FAX: (86-512) 65160705
E-mail: [email protected]
©Silikron Semiconductor CO.,LTD.
2012.07.12
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