SSF4015
Main Product Characteristics:
VDSS
-40V
RDS(on)
11mΩ (typ.)
ID
-40A
D
SSF3612D
SSF4015
SSF4035
S
TO-252 (D-PAK)
Marking and pin
Schematic diagram
Assignment
Features and Benefits:
G
Advanced trench MOSFET process technology
Special designed for PWM, load switching and
general purpose applications
Ultra low on-resistance with low gate charge
High Power and current handing capability
175℃ operating temperature
Description:
It utilizes the advanced trench processing techniques to achieve extremely low on resistance and low gate
charge. These features combine to make this design an extremely efficient and reliable device for use in PWM,
load switching and a wide variety of other applications.
Absolute max Rating:
Symbol
Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V①
-40
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V①
-28
IDM
Pulsed Drain Current②
-120
ISM
Pulsed Source Current (Body Diode)②
-120
PD @TC = 25°C
Power Dissipation③
75
W
VDS
Drain-Source Voltage
-40
V
VGS
Gate-to-Source Voltage
± 20
V
EAS
Single Pulse Avalanche Energy @ L=0.1mH
40
mJ
IAS
Single Pulse Avalanche Current @ L=0.1mH
28
A
TJ TSTG
Operating Junction and Storage Temperature Range
-55 to + 175
°C
©Silikron Semiconductor CO.,LTD.
2013.07.19
www.silikron.com
Version : 1.3
A
page 1 of 6
SSF4015
Thermal Resistance
Symbol
Characterizes
RθJA
Value
Unit
Junction-to-ambient (t ≤ 10s) ④
14
℃/W
Junction-to-Ambient (PCB mounted, steady-state) ④
40
℃/W
2
℃/W
Maximum Junction-to-Case⑤
RJC
Electrical Characterizes @TA=25℃ unless otherwise specified
Symbol
BVDSS
Parameter
Drain-to-Source breakdown
voltage
Min.
Typ.
Max.
Units
-40
—
—
V
—
11
15
—
14.3
—
Conditions
VGS = 0V, ID = 250μA
VGS=10V,
RDS(on)
VGS(th)
IDSS
Static Drain-to-Source
on-resistance
Gate threshold voltage
Drain-to-Source leakage
current
Gate-to-Source forward
IGSS
leakage
Gate-to-Source reverse
leakage
mΩ
—
18.5
25
—
23.6
—
-1
—
-3
—
—
—
-5
—
—
100
—
—
-100
5
27
—
Qg
Total gate charge
—
57.4
40
Qgs
Gate-to-Source charge
—
10.8
6
—
11.9
15
charge
td(on)
Turn-on delay time
—
15.2
—
tr
Rise time
—
23.7
—
td(off)
Turn-Off delay time
—
53.3
—
tf
Fall time
—
12.7
—
Ciss
Input capacitance
—
5188
—
Coss
Output capacitance
—
376
—
—
293
—
Crss
Reverse transfer
capacitance
©Silikron Semiconductor CO.,LTD.
VGS=4.5V,
TJ = 125℃
V
VDS = VGS, ID =250uA
VDS =-40V,VGS = 0V
μA
TJ = 55°C
VGS =20V
nA
Forward transconductance
Qgd
TJ = 125℃
ID = 8A
-1
G(fs)
Gate-to-Drain("Miller")
ID = 12A
2013.07.19
www.silikron.com
VGS = -20V
S
VDS=-5V,ID=-12.0A
ID=-20A,
nC
VDD=-12V,
VGS=-10V
VDD=-18.8V,ID=-12.5A,
ns
RL=1.50Ω,RG=3.00Ω,
VGS=-10V
Vds=-20V,
pF
Vgs=0V,
f=1MHZ
Version : 1.3
page 2 of 6
SSF4015
Source-Drain Ratings and Characteristics
Symbol
IS
VSD
Parameter
Maximum Body-Diode
Continuous Curren
Diode Forward Voltage
Min.
Typ.
Max.
Units
—
-40
—
A
—
-0.74
1.2
V
Conditions
TJ=25ْC,IS=-1A,VGS=0V
Test circuits and Waveforms
EAS Test Circuit:
Switching Time Test Circuit:
Gate charge test circuit:
Switching Waveforms:
Notes:
①Calculated continuous current based on maximum allowable junction temperature.
②Repetitive rating; pulse width limited by max. junction temperature.
③The power dissipation PD is based on max. junction temperature, using junction-to-case thermal
resistance.
④The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a
still air environment with TA =25°C
©Silikron Semiconductor CO.,LTD.
2013.07.19
www.silikron.com
Version : 1.3
page 3 of 6
SSF4015
Mechanical Data：
©Silikron Semiconductor CO.,LTD.
2013.07.19
www.silikron.com
Version : 1.3
page 4 of 6
SSF4015
Ordering and Marking Information
Device Marking: SSF4015
Package (Available)
TO-252
Operating Temperature Range
C : -55 to 175ºC
Devices per Unit
Option1：
Package Units/ Tubes/Inner
Type
Tube Box
TO-252
80
50
Units/Inner
Box
4000
Inner
Boxes/Carton
Box
10
Units/Carton
Box
Inner
Boxes/Carton
Box
7
Units/Carton
Box
Inner
Boxes/Carton
Box
10
Units/Carton
Box
40000
Option2：
Package Units/ Tapes/Inner
Type
Tape Box
TO-252
2500
2
Units/Inner
Box
5000
35000
Option3：
Package Units/ Tapes/Inner
Type
Tape Box
TO-252
2500
1
©Silikron Semiconductor CO.,LTD.
Units/Inner
Box
2500
2013.07.19
www.silikron.com
Version : 1.3
25000
page 5 of 6
SSF4015
ATTENTION:
■
■
■
■
■
■
■
■
Any and all Silikron products described or contained herein do not have specifications that can handle applications
that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other
applications whose failure can be reasonably expected to result in serious physical and/or material damage.
Consult with your Silikron representative nearest you before using any Silikron products described or contained
herein in such applications.
Silikron assumes no responsibility for equipment failures that result from using products at values that exceed,
even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed
in products specifications of any and all Silikron products described or contained herein.
Specifications of any and all Silikron products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees of the
performance, characteristics, and functions of the described products as mounted in the customer’s products or
equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer
should always evaluate and test devices mounted in the customer’s products or equipment.
Silikron Semiconductor CO.,LTD. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to
accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause
damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or
events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for
safe design, redundant design, and structural design.
In the event that any or all Silikron products(including technical data, services) described or contained herein are
controlled under any of applicable local export control laws and regulations, such products must not be exported
without obtaining the export license from the authorities concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical,
including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior
written permission of Silikron Semiconductor CO.,LTD.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for
volume production. Silikron believes information herein is accurate and reliable, but no guarantees are made or
implied regarding its use or any infringements of intellectual property rights or other rights of third parties.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
Silikron product that you intend to use.
Customer Service
Worldwide Sales and Service:
[email protected]
Technical Support:
[email protected]
Suzhou Silikron Semiconductor Corp.
Building 11A Suchun Industrial Square, 428# Xinglong Street, Suzhou P.R. China
TEL: (86-512) 62560688
FAX: (86-512) 65160705
E-mail: [email protected]
©Silikron Semiconductor CO.,LTD.
2013.07.19
www.silikron.com
Version : 1.3
page 6 of 6