SSF8N60 Features ■ ■ VDSS = 600V Extremely high dv/dt capability Low Gate Charge Qg results in Simple Drive Requirement ■ 100% avalanche tested ■ Gate charge minimized ■ Very low intrinsic capacitances ■ Very good manufacturing repeatability ID = 8A Rdson = 0.85Ω (typ.) Description The SSF8N60 is a new generation of high voltage N–Channel enhancement mode power MOSFETs and is obtained through an extreme optimization layout design, in additional to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability, provide superior switching performance, withstand high energy pulse in the avalanche, and increases packing density. Application SSF8N60 TOP View (TO220) ■ High current, high speed switching ■ Ideal for off-line power supply, adaptor, PFC Absolute Maximum Ratings Parameter Max. ID@Tc=25 ْC Continuous Drain Current,VGS@10V 8.2 ID@Tc=100ْC Continuous Drain Current,VGS@10V 5.5 IDM Pulsed Drain Current PD@TC=25ْC VGS ① Units A 32.8 Power Dissipation 145 W Linear derating Factor 0.8 W/ C ْ Gate-to-Source Voltage ±30 V 586 mJ 4 A 15 mJ 4.5 V/ns –55 to +150 ْC EAS Single Pulse Avalanche Energy IAR Avalanche Current EAR Repetitive Avalanche Energy dv/dt Peak Diode Recovery dv/dt ② ① ① ③ TJ Operating Junction and TSTG Storage Temperature Range Thermal Resistance Parameter Min. Typ. Max. RθJC Junction-to-case — — 0.86 RθCS Case-to-Sink,Flat,Greased Surface — 0.50 — RθJA Junction-to-Ambient — — 62.5 ©Silikron Semiconductor Corporation 2010.1.10 Version: 1.0 Units ْC/W page 1of6 SSF8N60 Electrical Characteristics @TJ=25 ْC (unless otherwise specified) Parameter Min. Typ. Drain-to-Source Breakdown Voltage 600 — — V VGS=0V,ID=250μA Breakdown Voltage Temp.Coefficient — 0.6 — V/ْC Reference to 25ْC,ID=250μA RDS(on) Static Drain-to-Source On-resistance — 0.85 1.1 Ω VGS=10V,ID=3.8A ④ VGS(th) Gate Threshold Voltage 2.0 — 4.0 V VDS=VGS,ID=250μA gfs Forward Transconductance — 6.4 — S VDS=40V,ID=3.8A IDSS Drain-to-Source Leakage current — — 1 — — 10 Gate-to-Source Forward leakage — — 0.5 Gate-to-Source Reverse leakage — — -0.5 Qg Total Gate Charge — 28.5 15 Qgs Gate-to-Source charge — 7 — Qgd Gate-to-Drain("Miller") charge — 14.6 — td(on) Turn-on Delay Time — 29 70 tr Rise Time — 78 160 td(off) Turn-Off Delay Time — 65 130 tf Fall Time — 60 128 Ciss Input Capacitance — 1000 1350 Coss Output Capacitance — 125 165 Crss Reverse Transfer Capacitance — 16 21 V(BR)DSS △ V(BR)DSS/ △ TJ IGSS Max. Units uA Test Conditions VDS=600V,VGS=0V VDS=480V,VGS=0V,TJ=150ْC VGS=30V uA VGS=-30V ID=7.5A nC VDS=480V VGS=10V VDD=300V nS ID=7.5A RG=25Ω VGS=0V pF VDS=25V f=1.0MHZ Source-Drain Ratings and Characteristics Parameter IS ISM Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) ① Min. Typ. Max. — — 8.2 Units MOSFET symbol A — — 32.8 Test Conditions showing the integral reverse p-n junction diode. VSD Diode Forward Voltage — — 1.3 V Trr Reverse Recovery Time — 300 — nS Qrr Reverse Recovery Charge — 1.8 uC TJ=25ْC,IS=7.2A,VGS=0V ④ TJ=25ْC,IF=7.2A di/dt=100A/μs ④ Notes: ① Repetitive rating; pulse width limited by maximum. junction temperature ② L = 23.5mH, IAS =6.5A, VDD = 50V, RG = 25ΩStarting, TJ = 25°C ③ ISD≤4A, di/dt≤200A/μs, VDD≤V(BR)DSS, TJ≤25°C ④ Pulse width≤300μS; duty cycle≤2% ©Silikron Semiconductor Corporation 2010.1.10 Version: 1.0 page 2of6 SSF8N60 Typical Performance Characteristics Figure 2 Transfer Characteristics Figure 1 On-Region Characteristics Figure 3 On-Resistance Variation vs. Drain Figure 4 Body diode forward Voltage Variation Current and Gate Voltage Characteristics vs. Source Current and temperature Characteristics Figure 6 Gate Charge Characteristics Figure 5 Capacitance Characteristics ©Silikron Semiconductor Corporation 2010.1.10 Version: 1.0 page 3of6 SSF8N60 Typical Performance Characteristics Figure 7 Breakdown Voltage Variation Figure 8 On-Resistance Variation vs. Temperature vs. Temperature Figure 10 Maximum Drain Current vs. Figure 9 Maximum Safe Operation Area Case Temperature Figure 12 Transient Thermal Response Curve ©Silikron Semiconductor Corporation 2010.1.10 Version: 1.0 page 4of6 SSF8N60 Test Circuit and Waveform Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveform Unclamped Inductive Switching Test Circuit & Waveform ©Silikron Semiconductor Corporation 2010.1.10 Version: 1.0 page 5of6 SSF8N60 TO-220 MECHANICAL DATA: ©Silikron Semiconductor Corporation 2010.1.10 Version: 1.0 page 6of6