SSFT4002 Main Product Characteristics: VDSS 40V RDS(on) 2.1 mohm ID 220A SSFT4002 SSFT3906 Features and Benefits: TO220 Marking and pin Schematic diagram Assignment Advanced trench MOSFET process technology Special designed for Convertors and power controls Ultra low on-resistance 175℃ operating temperature High Avalanche capability and 100% tested Description: It utilizes the latest trench processing techniques to achieve extremely low on resistance, fast switching speed and high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications Absolute max Rating: Parameter Max. ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) 220 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 145 ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited) 85 IDM Pulsed Drain Current① 850 PD @TC = 25°C Power Dissipation 220 W Linear Derating Factor 1.5 W/°C VGS Gate-to-Source Voltage ± 24 V EAS Single Pulse Avalanche Energy② 1200 mJ IAS Avalanche Current @ L=0.3mH 90 A Operating Junction and -55 to + 175 TJ TSTG Storage Temperature Range Units A °C 300 (1.6mm from Soldering Temperature, for 10 seconds case ) Thermal Resistance Symbol RθJC RθJA Characterizes Value Unit 0.62 ℃/W Junction-to-ambient ④ 60 ℃/W Junction-to-Ambient (PCB mounted, steady-state)⑤ 40 ℃/W Junction-to-case ©Silikron Semiconductor CO.,LTD. 2010.09.03 www.silikron.com Version : 1.1(preliminary) page 1of6 SSFT4002 Electrical Characterizes @TA=25℃ unless otherwise specified Parameter Min. Typ. Max Units Conditions BVDSS Drain-to-Source breakdown voltage 40 — — V VGS = 0V, ID = 250μA RDS(on) Static Drain-to-Source on-resistance — 2.1 2.5 mΩ VGS = 10V, ID = 30A③ VGS(th) Gate threshold voltage 2 — 4 V VDS = VGS, ID = 250μA IDSS Drain-to-Source leakage current — — 10 — — 150 Gate-to-Source forward leakage — — 100 Gate-to-Source reverse leakage — — -100 Qg Total gate charge — 220 — Qgs Gate-to-Source charge — 56 — Qgd Gate-to-Drain("Miller") charge — 56 — td(on) Turn-on delay time — 33 — tr Rise time — 133 — td(off) Turn-Off delay time — 120 — tf Fall time — 80 — Ciss Input capacitance — 15300 — Coss Output capacitance — 1290 — Crss Reverse transfer capacitance — 306 — IGSS VDS = 40V, VGS = 0V μA VDS = 40V, VGS = 0V, TJ = 125°C nA VGS = 24V VGS = -24V nC ns pF ID = 75A VDS = 32V VGS = 10V③ VDD = 20V ID = 75A RG = 3.0 Ω VGS = 10V③ VGS = 0V VDS = 25V ƒ = 1.0MHz Source-Drain Ratings and Characteristics Parameter IS Min. Typ. Max Units Continuous Source Current (Body Diode) MOSFET symbol — — showing the 75 integral reverse A ISM Pulsed VSD Diode Forward Reverse Recovery Time Qrr Reverse Recovery Charge ton — — 750 — 0.85 1.3 V 45 ns TJ = 25°C, IS = 75A, VGS = 0V③ ① Voltage trr p-n junction diode. Source Current (Body Diode) Conditions — 37 TJ = 25°C, IF = 75A, VDD = 20V di/dt = 100A/μs③ TJ = 25°C, IF = 65A, VDD = 20V di/dt = 100A/μs③ — Forward Turn-on Time ©Silikron Semiconductor CO.,LTD. 36 55 nC Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) 2010.09.03 www.silikron.com Version : 1.1(preliminary) page 2of6 SSFT4002 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: 1000 1000 10v 6v 5.5v 5v 100 4.5v 380us pulse width 5.5v 5v 100 4.5v 380us pulse width O Tj=150OC Tj=25 C 10 10 0.1 1 10 100 0.1 1 Vds,Drain-to-Source Voltage(V) 10 100 Vds,Drain-to-Source Voltage(V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 10000.00 8000.00 Vgs =0V,f=1MHZ Ciss= Cgs + Cgd,Cds Shorted Crss= Cgd Coss= Cds + Cgd 7000.00 6000.00 5000.00 4000.00 Coss 3000.00 2000.00 Crss 1000.00 Tj=25C Id, Drain-to-Source Current (A) Ciss 9000.00 C,Capacitance(pF) 6v 10v 15v Id,Drain-to-Source Curent(A) Id,Drain-to-Source Curent(A) 15v Tj=175C 100 0.00 1 10 100 4 5 6 7 8 9 10 Vds,Drain-to-Source Voltage(V) Vgs, Gate-to-Source Voltage (V) Fig 3. Typical Capacitance Vs. Drain-to-Source Voltage Fig 4. Typical Transfer Characteristics 1000 Id, Drain Current (A) Rds(on) Limited 100 Id(A) @Pw =10ms Id(A) @Pw =1ms Id(A) @Pw =100us 10 Id(A) @Pw =10us Tj, (Max)=175℃ Ta=25℃ Single Pulse 1 1 10 100 Vds, Drain-Source Voltage (V) Fig 5. Maximum Drain Current Vs. Case Temperature Fig 6. SOA, Safe Operation Area Temperature Case Temperature Case Temperature ©Silikron Semiconductor CO.,LTD. 2010.09.03 www.silikron.com Version : 1.1(preliminary) page 3of6 SSFT4002 1000 Isd,Reverse Drain Current(A) Rdson,Drain-to-Source On Resistance(Normalized) 2 Id=75A Vgs=10V 1.5 1 0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 Tj,Junction Temperature(°C) Fig 7. Normalized On-Resistance Vs. Temperature Tj=175C 100 10 Tj=25C 1 Vgs=0v 0.1 0.4 0.6 0.8 1 1.2 Vsd.Source-to-Drain Voltage(V) Fig 8. Typical Source-Drain Diode Forward Voltage Vs. Temperature Temperature Case Temperature Zthjc, Transient Thermal Response (C/W) 10 1 Zthjc Zthjc Zthjc Zthjc Zthjc Zthjc Zthjc Zthjc Zthjc Zthjc 0.1 0.01 @ @ @ @ @ @ @ @ @ @ D=0.9 D=0.7 D=0.5 D=0.3 D=0.1 D=0.05 D=0.02 D=0.01 D=0.005 D=Single Pulse Duty Cycle, D=t1 / t2 Tj,max=Pdm*Zthjc+Tc 0.001 0.00001 0.0001 0.001 0.01 t1, Pulse Duration Time (sec) 0.1 1 Fig 9. Maximum Effective Transient Thermal Impedance, Junction-to-Case. Case Temperature ©Silikron Semiconductor CO.,LTD. 2010.09.03 www.silikron.com Version : 1.1(preliminary) page 4of6 SSFT4002 Notes: ①Repetitive rating; pulse width limited by max. junction temperature. ②Limited by TJmax, starting TJ = 25°C, L = 0.3mH RG =50Ω, IAS = 82A, VGS =10V. Part not recommended for use above this value. ③Pulse width < 1.0ms; duty cycle<2%. ④This is only applied to TO-220 package. ⑤for D2-PAK package, When mounted on 1" square PCB ( FR-4 or G-10 Material ). ©Silikron Semiconductor CO.,LTD. 2010.09.03 www.silikron.com Version : 1.1(preliminary) page 5of6 SSFT4002 Mechanical Data: TO220 PACKAGE OUTLINE DIMENSION_GN E ФP A ϴ1 D D2 ФP1 ϴ3 ϴ2 D1 b1 b A1 ϴ4 L c e A A1 b b1 c D D1 D2 E E1 ФP Dimension In Millimeters Min Nom Max 1.300 2.200 2.400 2.600 1.270 1.270 1.370 1.470 0.500 15.600 28.700 9.150 9.900 10.000 10.100 10.160 3.600 - ФP1 e L 1.500 2.54BSC 13.100 Symbol ϴ1 ϴ2 12.900 - ϴ3 - ϴ4 - ©Silikron Semiconductor CO.,LTD. E1 Min 0.087 0.050 0.390 - 13.300 - 0.508 - 3 - 5 30 - 10 0 7 70 0 2010.09.03 www.silikron.com 0 Dimension In Inches Nom Max 0.051 0.094 0.102 0.050 0.054 0.058 0.020 0.614 1.130 0.360 0.394 0.398 0.400 0.142 0.059 0.1BSC 0.516 0 7 70 0.524 - 0 7 90 30 50 Version : 1.1(preliminary) page 6of6