SSF7604 Main Product Characteristics: VDSS 75V RDS(on) 3.7mΩ(typ.) ID 180A ① TO220 Schematic diagram Assignment Features and Benefits: Marking and pin Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 175℃ operating temperature Description: It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications. Absolute max Rating: Symbol Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 180 ① ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 130 ① IDM Pulsed Drain Current ② 720 Power Dissipation ③ 330 W Linear Derating Factor 2.2 W/°C VDS Drain-Source Voltage 75 V VGS Gate-to-Source Voltage ± 20 V EAS Single Pulse Avalanche Energy @ L=0.3mH 936 mJ IAS Avalanche Current @ L=0.3mH 79 A -55 to + 175 °C PD @TC = 25°C TJ TSTG Operating Junction and Storage Temperature Range ©Silikron Semiconductor CO.,LTD. 2012.04.23 www.silikron.com Version : 1.0 A page 1 of 8 SSF7604 Thermal Resistance Symbol Characterizes Typ. Max. Units RθJC Junction-to-case ③ — 0.45 ℃/W RθJA Junction-to-ambient (t ≤ 10s) ④ — 62 ℃/W Electrical Characterizes @TA=25℃ unless otherwise specified Symbol Parameter V(BR)DSS Drain-to-Source breakdown voltage RDS(on) Static Drain-to-Source on-resistance VGS(th) Gate threshold voltage IDSS Drain-to-Source leakage current IGSS Gate-to-Source forward leakage Qg Min. Typ. Max. Units 75 — — V — 3.7 4 — 6.6 — 2 — 4 — 2.37 — — — 1 — — 50 — — 100 — — -100 Total gate charge — 244 — Qgs Gate-to-Source charge — 91 — Qgd Gate-to-Drain("Miller") charge — 81 — td(on) Turn-on delay time — 35 — tr Rise time — 122 — td(off) Turn-Off delay time — 109 — tf Fall time — 119 — Ciss Input capacitance — 23733 — Coss Output capacitance — 880 — Crss Reverse transfer capacitance — 501 — mΩ V μA nA Conditions VGS = 0V, ID = 250μA VGS=10V,ID = 40A TJ = 125℃ VDS = VGS, ID = 250μA TJ = 125℃ VDS = 75V,VGS = 0V TJ = 125℃ VGS =20V VGS = -20V ID = 75A, nC VDS=38V, VGS = 10V VGS=10V, VDS=50V, ns RL=0.67Ω, RGEN=2.7Ω VGS = 0V pF VDS = 25V ƒ = 1MHz Source-Drain Ratings and Characteristics Symbol IS ISM Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Min. Typ. Max. Units — — 180 ① A — — 720 A Conditions MOSFET symbol showing the integral reverse p-n junction diode. VSD Diode Forward Voltage — 0.87 1.3 V IS=40A, VGS=0V trr Reverse Recovery Time — 59 — ns TJ = 25°C, IF =75A, di/dt = Qrr Reverse Recovery Charge — 149 — nC 100A/μs ©Silikron Semiconductor CO., LTD. 2012.04.23 www.silikron.com Version: 1.0 page 2 of 8 SSF7604 Test circuits and Waveforms Switch Waveforms: Notes: ①Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A. ②Repetitive rating; pulse width limited by max. junction temperature. ③The power dissipation PD is based on max. junction temperature, using junction-to-case thermal resistance. ④The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C ⑤These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. ©Silikron Semiconductor CO., LTD. 2012.04.23 www.silikron.com Version: 1.0 page 3 of 8 SSF7604 Typical electrical and thermal characteristics Figure 2. Gate to source cut-off voltage Figure 1: Typical Output Characteristics Figure 3. Drain-to-Source Breakdown Voltage Vs. Temperature ©Silikron Semiconductor CO., LTD. Figure 4: Normalized On-Resistance Vs. Case Temperature 2012.04.23 www.silikron.com Version: 1.0 page 4 of 8 SSF7604 Typical electrical and thermal characteristics Figure 5. Maximum Drain Current Vs. Case Figure 6.Typical Capacitance Vs. Drain-to-Source Temperature Voltage Case Temperature Figure7. Maximum Effective Transient Thermal Impedance, Junction-to-Case ©Silikron Semiconductor CO., LTD. 2012.04.23 www.silikron.com Version: 1.0 page 5 of 8 SSF7604 Mechanical Data: TO220 PACKAGE OUTLINE DIMENSION_GN Symbol A A1 A2 b b1 b2 C D D1 D2 E E1 ФP ФP1 e e1 L L1 L2 L3 Dimension In Millimeters Min Nom Max 4.400 4.550 4.700 1.270 1.300 1.330 2.240 2.340 2.440 1.270 1.270 1.370 1.470 0.750 0.800 0.850 0.480 0.500 0.520 15.100 15.400 15.700 8.800 8.900 9.000 2.730 2.800 2.870 9.900 10.000 10.100 8.700 3.570 3.600 3.630 1.400 1.500 1.600 2.54BSC 5.08BSC 13.150 13.360 13.570 7.35REF Dimension In Inches Nom Max 0.179 0.185 0.051 0.052 0.092 0.096 0.050 0.054 0.058 0.031 0.033 0.020 0.021 0.606 0.618 0.350 0.354 0.110 0.113 0.394 0.398 0.343 0.142 0.143 0.059 0.063 0.1BSC 0.2BSC 0.518 0.526 0.534 0.29REF Min 0.173 0.050 0.088 0.050 0.030 0.019 0.594 0.346 0.107 0.390 0.141 0.055 2.900 1.650 3.000 1.750 3.100 1.850 0.114 0.065 0.118 0.069 0.122 0.073 0.900 1.000 1.100 0.035 0.039 0.043 50 70 90 50 70 90 Q2 Q3 0 5 50 0 7 70 0 9 90 0 5 50 0 7 70 90 90 Q4 10 30 50 10 30 50 L4 Q1 ©Silikron Semiconductor CO., LTD. 2012.04.23 www.silikron.com Version: 1.0 page 6 of 8 SSF7604 Ordering and Marking Information Device Marking: SSF7604 Package (Available) TO220 Operating Temperature Range C : -55 to 175 ºC Devices per Unit Package Type Units/ Tube Tubes/Inner Box Units/Inner Inner Box Boxes/Carton Box Units/Carton Box TO220 50 20 1000 6000 Reliability Test Program Test Item Conditions High Temperature Reverse Bias(HTRB) High Temperature Gate Bias(HTGB) 6 Duration Sample Size Tj=125℃ to 175℃ @ 80% of Max VDSS/VCES/VR 168 hours 500 hours 1000 hours 3 lots x 77 devices Tj=150℃ or 175℃ @ 100% of Max VGSS 168 hours 500 hours 1000 hours 3 lots x 77 devices ©Silikron Semiconductor CO., LTD. 2012.04.23 www.silikron.com Version: 1.0 page 7 of 8 SSF7604 ATTENTION: ■ ■ ■ ■ ■ ■ ■ ■ ■ Any and all Silikron products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your Silikron representative nearest you before using any Silikron products described or contained herein in such applications. Silikron assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all Silikron products described or contained herein. Specifications of any and all Silikron products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment. Silikron Semiconductor CO.,LTD. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all Silikron products(including technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. 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Specifications and information herein are subject to change without notice. Customer Service Worldwide Sales and Service: [email protected] Technical Support: [email protected] Suzhou Silikron Semiconductor Corp. 11A, 428 Xinglong Street, Suzhou Industrial Park, P.R.China TEL: (86-512) 62560688 FAX: (86-512) 65160705 E-mail: [email protected] ©Silikron Semiconductor CO., LTD. 2012.04.23 www.silikron.com Version: 1.0 page 8 of 8