SSF3117 DESCRIPTION The SSF3117 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . A Schottky diode is provided to facilitate the implementation of a bidirectional blocking switch, or for DC-DC conversion applications. GENERAL FEATURES Schematic diagram ● MOSFET VDS = -20V,ID = -3.3A RDS(ON) < 180mΩ @ VGS=-1.8V RDS(ON) < 120mΩ @ VGS=-2.5V RDS(ON) < 90mΩ @ VGS=-4.5V ● SCHOTTKY VR = 30V, IF = 2A, VF<0.53V @ 1.0A ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package Marking and pin Assignment Application ●DC-DC conversion applications ●Load switch ●Power management DFN2X2-6L PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Device Package Reel Size Tape width Quantity 3117 SSF3117 DFN2X2-6L － － － ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted) Parameter Symbol MOSFET Drain-Source Voltage VDS -20 V Gate-Source Voltage VGS ±8 V Continuous Drain Current (Note 1) ID -3.3 A Pulsed Drain Current IDM -20 A Schottky reverse voltage VR 30 V Continuous Forward Current IF 2 A Maximum Power Dissipation PD 1.5 TJ,TSTG -55 To 150 Operating Junction and Storage Temperature Range Schottky Unit W -55 To 150 ℃ THERMAL CHARACTERISTICS MOSFET Thermal Resistance, Junction-to-Ambient (Note 2) ©Silikron Semiconductor CO.,LTD. RθJA 1 54 http://www.silikron.com ℃/W v1.1 SSF3117 ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Drain-Source Breakdown Voltage BVDSS VGS=0V ID=-250μA -20 Zero Gate Voltage Drain Current IDSS VDS=-16V,VGS=0V -1 μA Gate-Body Leakage Current IGSS VGS=±8V,VDS=0V ±100 nA VGS(th) VDS=VGS,ID=-250μA -0.7 -1.0 V VGS=-4.5V, ID=-2.0A 67 90 VGS=-2.5V, ID=-2.0A 91 120 VGS=-1.8V, ID=-1.6A 130 180 VDS=-5V,ID=-2.0A 3.1 S 530 PF 90 PF OFF CHARACTERISTICS V ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance RDS(ON) gFS -0.4 mΩ DYNAMIC CHARACTERISTICS (Note4) Input Capacitance Clss VDS=-10V,VGS=0V, F=1.0MHz Output Capacitance Coss Reverse Transfer Capacitance Crss 55 PF Turn-on Delay Time td(on) 5.5 nS Turn-on Rise Time tr 15 nS 19.8 nS 21.6 nS SWITCHING CHARACTERISTICS (Note 4) Turn-Off Delay Time VDD=-10V,ID=-2.0A VGS=-4.5V,RGEN=2.0Ω td(off) Turn-Off Fall Time tf Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd 5.5 VDS=-10V,ID=-2.0A, VGS=-4.5V 6.2 nC 1.0 nC 1.4 nC DRAIN-SOURCE DIODE CHARACTERISTICS Diode Forward Voltage (Note 3) VSD VGS=0V,IS=-1A -0.84 -1.0 V Reverse Recovery Time Trr 16.2 nS Reverse Recovery Charge Qrr VGS = 0 V dISD/dt = 100 A/us IS = -1.0 A 5.7 nC Forward Voltage Drop VF IF=1.0A 0.48 0.53 V Maximum reverse leakage current Irm VR=30V 5 10 uA Junction Capacitance CT VR=5V，f = 1.0 MHz 38 SCHOTTKY PARAMETERS pF NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production testing. ©Silikron Semiconductor CO.,LTD. 2 http://www.silikron.com v1.1 SSF3117 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS ton tr Vdd td(on) Rl Vin Vgs Rgen D 90% Vout VOUT G toff tf td(off) 90% INVERTED 10% 10% 90% VIN S 50% 50% 10% PULSE WIDTH Figure 2:Switching Waveforms ZθJA Normalized Transient Thermal Resistance Figure1:Switching Test Circuit Square Wave Pluse Duration(sec) Figure 3: Normalized Maximum Transient Thermal Impedanc ©Silikron Semiconductor CO.,LTD. 3 http://www.silikron.com v1.1 SSF3117 DFN2X2-6L PACKAGE INFORMATION Top View Bottom View Side View Dimensions In Millimeters Symbol Min. Max. Dimensions In Inches Min. Max. A 0.700/0.800 0.800/0.900 0.028/0.031 0.031/0.035 A1 0.000 0.050 0.000 0.002 A3 0.203REF. 0.008REF. D 1.924 2.076 0.076 0.082 E 1.924 2.076 0.076 0.082 D1 0.520 0.720 0.020 0.028 E1 0.900 1.100 0.035 0.043 k b e L 0.200MIN. 0.250 0.008MIN. 0.350 0.010 0.650TYP. 0.174 0.014 0.026TYP. 0.326 0.007 0.013 NOTES： 1. Tolerance ±0.10mm (4 mil) unless otherwise specified 2. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 5 mils. 3. Dimension L is measured in gauge plane. 4. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact. ©Silikron Semiconductor CO.,LTD. 4 http://www.silikron.com v1.1 SSF3117 ATTENTION: ■ ■ ■ ■ ■ ■ ■ ■ ■ Any and all Silikron products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your Silikron representative nearest you before using any Silikron products described or contained herein in such applications. Silikron assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all Silikron products described or contained herein. Specifications of any and all Silikron products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment. Silikron Semiconductor CO.,LTD. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all Silikron products(including technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of Silikron Semiconductor CO.,LTD. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. Silikron believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the Silikron product that you intend to use. This catalog provides information as of Dec, 2008. Specifications and information herein are subject to change without notice. ©Silikron Semiconductor CO.,LTD. 5 http://www.silikron.com v1.1