JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD DFNWB2×3 -6L-C Plastic-Encapsulate MOSFETS CJCD2005 Dual N-Channel MOSFET DFNWB2×３-6L-C V(BR)DSS ID RDS(on)MAX 13mΩ@10 V 20V 14mΩ @4.5V 15.5mΩ@3.8V 8A 19 mΩ@2.5V 27mΩ@1.8V DESCRIPTION The CJCD2005 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It is ESD protected. This device is suitable for use as a uni-directional or bi-directional load switch,facilitated by its common-drain configuration. Equivalent Circuit MARKING: MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ±12 V Continuous Drain Current ID 8 A Pulsed Drain Current IDM * 30 A Thermal Resistance from Junction to Ambient RθJA 125 ℃/W Junction Temperature Tj 150 ℃ Storage Temperature Tstg -55~+150 ℃ Lead Temperature for Soldering Purposes(1/8’’ from case for 10 s) TL 260 ℃ *Repetitive rating：Pluse width limited by junction temperature. www.cj-elec.com 1 C,May,2015 MOSFET ELECTRICAL CHARACTERISTICS Ta =25 Я unless otherwise specified Parameter Symbol Test Condition Min Typ Max Unit STATIC PARAMETERS Drain-source breakdown voltage V (BR) DSS VGS = 0V, ID =250µA Zero gate voltage drain current IDSS VDS =16V,VGS = 0V 10 µA Gate-body leakage current IGSS VGS =±10V, VDS = 0V ±10 µA VGS(th) VDS =VGS, ID =250µA 1 V VGS =10V, ID =8A 13 mΩ VGS =4.5V, ID =5A 14 mΩ VGS =3.8V, ID =5A 15.5 mΩ VGS =2.5V, ID =4A 19 mΩ VGS =1.8V, ID =3A 27 mΩ Gate threshold voltage (note 1) Drain-source on-resistance (note 1) RDS(on) Forward tranconductance (note 1) gFS VDS =5V, ID =8A Diode forward voltage(note 1) VSD IS=1A, VGS = 0V 20 V 0.5 S 36 1 V DYNAMIC PARAMETERS (note 2) Input Capacitance Ciss 1800 pF Output Capacitance Coss 230 pF Reverse Transfer Capacitance Crss 200 pF Total gate charge Qg 17.9 nC Gate-source charge Qgs 1.5 nC Gate-drain charge Qgd 4.7 nC td(on) 2.5 ns VDS =10V,VGS =0V,f =1MHz VDS =10V,VGS =4.5V,ID =8A SWITCHING PARAMETERS(note 2) Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time tr VGS=10V,VDD=10V, 7.2 ns td(off) RL=1.2Ω,RGEN=3Ω 49 ns 10.8 ns tf Notes : 1. Pulse Test : Pulse width≤300µs, duty cycle≤0.5%. 2. Guaranteed by design, not subject to production testing. www.cj-elec.com 2 C,May,2015 Typical Characteristics Transfer Characteristics Output Characteristics 25 10 Pulsed VDS=16V VGS=10V、3.0V、2V Pulsed 20 ID 15 6 DRAIN CURRENT DRAIN CURRENT ID (A) (A) 8 VGS=1.5V 10 5 4 Ta=100℃ Ta=25℃ 2 VGS=1.2V 0 0 2 4 6 DRAIN TO SOURCE VOLTAGE 0.4 0.2 (V) 0.6 0.8 1.0 1.2 GATE TO SOURCE VOLTAGE ID RDS(ON) —— 40 VDS 0 0.0 10 8 1.4 VGS RDS(ON)—— VGS 100 Ta=25℃ Ta=25℃ (mΩ) 30 RDS(ON) VGS=1.8V 25 20 ON-RESISTANCE (mΩ) RDS(ON) ON-RESISTANCE Pulsed ID=8A Pulsed 35 1.6 (V) VGS=2.5V 15 10 VGS=10V 80 60 40 Ta=100℃ 20 5 Ta=25℃ 0 0 1 2 3 4 5 6 DRAIN CURRENT IS —— ID 7 8 0 VSD 6 8 10 VGS 12 (V) Threshold Voltage 750 Ta=25℃ 700 Pulsed VTH (mV) 1 0.1 THRESHOLD VOLTAGE IS (A) 4 GATE TO SOURCE VOLTAGE (A) 10 SOURCE CURRENT 2 Ta=100℃ Ta=25℃ 0.01 1E-3 650 600 ID=250uA 550 500 450 400 1E-4 0.0 0.2 0.4 0.6 0.8 SOURCE TO DRAIN VOLTAGE www.cj-elec.com 1.0 350 25 1.2 50 75 JUNCTION TEMPERATURE VSD (V) 3 100 TJ 125 (℃ ) C,May,2015 C Symbol A A1 A3 D E D1 E1 k b e L Dimensions In Millimeters Min. Max. 0.700 0.800 0.000 0.050 0.203REF. 1.950 2.050 2.950 3.050 1.400 1.600 1.600 1.800 0.200MIN. 0.200 0.300 0.500TYP. 0.300 0.400 Dimensions In Inches Min. Max. 0.028 0.031 0.000 0.002 0.008REF. 0.077 0.081 0.116 0.120 0.063 0.055 0.063 0.071 0.008MIN. 0.008 0.012 0.020TYP. 0.012 0.016 C 4 C,May,2015 DFNWB2X3-6L Tape and Reel www.cj-elec.com 5 C,May,2015