JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD DFNWB2×2-6L-I Power Management Transistors-MOSFET CJMNT31 V(BR)DSS/VR PNP Power Transistor with N-MOSFET ID/IC RDS(on)MAX 360mΩ@4.5V 410mΩ@2.5V 480mΩ@1.8V 1.3Ω@1.5V / 20V -30V DFNWB2×2-6L-I 0.69A -2A FEATURES APPLICATIONS z Charging circuit z Other power management in portable equipments z Ultra low collector-to-emitter saturation voltage z High DC current gain z Small package DFNWB2x2-6L-I Equivalent circuit MARKING: 31 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit PNP Transistor VCBO Collector-Base Voltage -30 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -6 V Collector Current-Continuous(Note1) -3 A IC Collector Current-Continuous(Note2) -2 A Collector Current-Pulse(Note3) -6 A VDS Drain-Source Voltage 20 V VGS Gate-Source Voltage ±6 V Drain Current -Continuous(Note1) 0.8 A Drain Current -Continuous(Note2) 0.69 A 1.4 A 0.7 W ICM N-MOSFET ID IDM Drain Current - Pulse(Note3) Power Dissipation, Temperature and Thermal Resistance PD PC RθJA Tj Tstg TL Power Dissipation 2.5 W Thermal Resistance from Junction to Ambient 179 ℃/W Junction Temperature 150 ℃ Storage Temperature -55~+150 ℃ 260 ℃ Power Dissipation (Tc=25℃ ,Note1) Lead Temperature 1G,May,2015 ELECTRICAL CHARACTERISTICS Ta =25 ℃ unless otherwise specified Parameter Symbol Test conditions Min Typ Max Unit PNP Transistor Collector-base breakdown voltage V(BR)CBO IC=-1mA,IE=0 -30 V Collector-emitter breakdown V(BR)CEO IC=-10mA,IB=0 -30 V Emitter-base breakdown voltage V(BR)EBO IE=-100μA,IC=0 -6 V Collector cut-off current ICBO VCB=-30V,IE=0 -0.1 μA Emitter cut-off current IEBO VEB=-5V,IC=0 -0.1 μA DC current gain hFE VCE=-2V, IC=-1A 100 300 Collector-emitter saturation voltage VCE(sat) IC=-2A,IB=-200mA -0.2 -0.4 V Base-emitter saturation voltage VBE(sat) IC=-2A,IB=-200mA -1 -1.5 V Base-emitter voltage VBE(on) VCE=-2V, IC=-500mA -0.7 -1 V N-MOSFET STATIC PARAMETERS Drain-source breakdown voltage V (BR)DSS VGS =0V, ID=250µA Zero gate voltage drain current IDSS VDS =20V,VGS = 0V 1 µA Gate-body leakage current IGSS VGS =±5V, VDS = 0V ±5 µA VGS(th) VDS =VGS, ID =250µA 1 V VGS =4.5V, ID =0.55A 360 mΩ VGS =2.5V, ID =0.45A 410 mΩ VGS =1.8V, ID =0.35A 480 mΩ VGS =1.5V, ID =0.1A 1.3 Ω 1 V Gate threshold voltage Drain-source on-resistance Diode forward voltage RDS(on) VSD IS=0.35A, VGS = 0V 20 V 0.45 0.5 DYNAMIC PARAMETERS (note 4) Input Capacitance Ciss 50 pF Output Capacitance Coss 13 pF Reverse Transfer Capacitance Crss 8 pF td(on) 22 ns 80 ns 700 ns 650 ns VDS =10V,VGS =0V,f =1MHz SWITCHING PARAMETERS (note 4) Turn-on delay time Turn-on rise time Turn-off delay time tr td(off) Turn-off fall time VGS=4.5V,VDS=10V, RL=10Ω,RGEN=6Ω, ID=0.5A tf Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS =10V,VGS =4.5V, ID =0.6A 1.15 nC 0.15 nC 0.23 nC Note: 1、 Surface mounted on FR-4 board using 1 square inch pad size, 1oz copper 2、 Surface mounted on FR-4 board using minimum pad size, 1oz copper 3、 Pulse test: pulse width =300μs, duty cycle≤ 2% 4、 These parameters have no way to verify. 2G,May,2015 PNP Transistor Typical Characteristics PNP Transistor Static Characteristic 2000 COMMON EMITTER Ta=25℃ 1600 hFE -3.5mA 1200 -3mA 1000 -2.5mA 800 -2mA 600 -1.5mA 400 400 Ta=100℃ 350 300 Ta=25℃ 250 200 -1mA 150 COMMON EMITTER VCE= 2V IB=-0.5mA 0 100 -0 -2 -4 -6 -8 -10 COLLECTOR-EMITTER VOLTAGE VBEsat —— -12 IC Ta=25℃ -0.6 Ta=100 ℃ -0.4 -0.2 β=10 -100 -10 COLLECTOR CURREMT PC 1200 —— VCEsat -1000 IC IC —— (mA) IC -100 Ta=100 ℃ Ta=25℃ -10 β=10 -1 -3000 -10 -100 COLLECTOR CURREMT (mA) Ta 500 Cob/Cib —— -1000 IC VCB/VEB f=1MHz IE=0/IC=0 (pF) 400 Ta=25 ℃ 100 Cob C CAPACITANCE 600 -3000 (mA) Cib 1000 800 -3000 -1000 -1 -0.0 -1 -100 -10 COLLECTOR CURRENT -1000 -1.0 -0.8 -1 VCE (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) -1.2 COLLECTOR POWER DISSIPATION PC (mW) IC 450 -4mA 1400 200 BASE-EMITTER SATURATION VOLTAGE VBEsat (V) —— -5mA -4.5mA DC CURRENT GAIN COLLECTOR CURRENT IC (mA) 1800 hFE 500 10 200 0 0 25 50 75 AMBIENT TEMPERATURE 100 Ta 125 (℃ ) 150 1 -0.1 -1 REVERSE VOLTAGE -10 V -20 (V) 3G,May,2015 N-MOSFET Typical Characteristics N -channel Characteristics Output Characteristics 5 Transfer Characteristics 500 Ta=25℃ VGS=5.5V Pulsed VDS=16V Pulsed VGS=4.5V 4 400 (mA) ID 3 DRAIN CURRENT DRAIN CURRENT ID (A) VGS=3.5V VGS=2.5V 2 1 300 Ta=100℃ 200 Ta=25℃ 100 VGS=1.5V 0 0.0 0.5 1.0 1.5 2.0 DRAIN TO SOURCE VOLTAGE RDS(ON) —— 600 2.5 VDS 0 0.0 3.0 0.5 (V) 1.0 1.5 2.0 2.5 GATE TO SOURCE VOLTAGE ID RDS(ON) Ta=25℃ —— VGS 3.0 (V) VGS 440 Pulsed (mΩ) RDS(ON) VGS=1.8V ID=600mA 400 380 400 ON-RESISTANCE ON-RESISTANCE RDS(ON) (mΩ) 420 500 VGS=2.5V 300 VGS=4.5V 340 Ta=100℃ Pulsed 320 Ta=25℃ 300 200 100 360 Pulsed 200 300 400 DRAIN CURRENT ID 500 280 1.5 600 IS —— VSD 500 2.5 2.0 3.0 3.5 4.0 GATE TO SOURCE VOLTAGE (mA) VGS 4.5 5.0 (V) Threshold Voltage 1.00 0.95 VTH THRESHOLD VOLTAGE SOURCE CURRENT IS (mA) (V) 100 Ta=100℃ 10 Pulsed Ta=25℃ Pulsed 1 0.90 0.85 0.80 ID=250uA 0.75 0.70 0.65 0.60 0.55 0.1 0.0 0.2 0.4 0.6 0.8 SOURCE TO DRAIN VOLTAGE 1.0 VSD (V) 1.2 0.50 25 50 75 JUNCTION TEMPERATURE 100 TJ 125 (℃ ) 4G,May,2015 I N1 Symbol A A1 A3 D E D1 E1 D2 E2 e1 e2 k b e L Dimensions In Millimeters Max. Min. 0.700 0.800 0.000 0.050 0.203REF. 1.924 2.076 1.924 2.076 0.850 1.050 0.700 0.900 0.200 0.400 0.700 0.900 0.650TYP. 0.325TYP 0.200MIN. 0.250 0.350 0.650TYP. 0.300 0.400 Dimensions In Inches Min. Max. 0.028 0.032 0.000 0.002 0.008REF. 0.076 0.082 0.076 0.082 0.033 0.041 0.028 0.035 0.008 0.016 0.028 0.035 0.026TYP. 0.013TYP 0.008MIN. 0.010 0.014 0.026TYP. 0.012 0.016 I www.cj-elec.com 5 G,May,2015 DFNWB2X2-6L Tape and Reel www.cj-elec.com 6 G,May,2015