SSF6808D
Main Product Characteristics:
VDSS
68V
RDS(on)
6.1mohm(typ.)
ID
79A
DPAK
Features and Benefits:
Marking and pin
Schematic diagram
Assignment
Advanced trench MOSFET process technology
Special designed for PWM, load switching and
general purpose applications
Ultra low on-resistance with low gate charge
Fast switching and reverse body recovery
175℃ operating temperature
Description:
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the
on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely
efficient and reliable device for use in power switching application and a wide variety of other applications
Absolute max Rating:
Symbol
Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V①
79
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V①
56
IDM
Pulsed Drain Current②
316
Power Dissipation③
114
W
Linear Derating Factor
0.76
W/°C
VDS
Drain-Source Voltage
68
V
VGS
Gate-to-Source Voltage
± 20
V
EAS
Single Pulse Avalanche Energy @ L=0.3mH
252
mJ
IAS
Avalanche Current @ L=0.3mH
41
A
-55 to + 175
°C
PD @TC = 25°C
TJ
TSTG
Operating Junction and Storage Temperature Range
©Silikron Semiconductor CO.,LTD.
2011.05.25
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A
page 1 of 8
SSF6808D
Thermal Resistance
Symbol
Characterizes
RθJC
RθJA
Typ.
Max.
Units
Junction-to-case③
—
1.32
℃/W
Junction-to-ambient (t ≤ 10s) ④
—
62
℃/W
Junction-to-Ambient (PCB mounted, steady-state) ④
—
40
℃/W
Electrical Characterizes @TA=25℃ unless otherwise specified
Symbol
Parameter
V(BR)DSS
Drain-to-Source breakdown voltage
RDS(on)
Static Drain-to-Source on-resistance
VGS(th)
Gate threshold voltage
IDSS
Drain-to-Source leakage current
IGSS
Gate-to-Source forward leakage
Qg
Min.
Typ.
Max.
Units
68
—
—
V
—
6.5
8
—
11.1
—
2
—
4
—
2.3
—
—
—
1
—
—
50
—
—
100
-100
—
—
Total gate charge
—
74.6
—
Qgs
Gate-to-Source charge
—
19.2
—
Qgd
Gate-to-Drain("Miller") charge
—
27.9
—
VGS = 10V
td(on)
Turn-on delay time
—
16.0
—
VGS=10V, VDS=60V,
tr
Rise time
—
96.4
—
td(off)
Turn-Off delay time
—
38.4
—
tf
Fall time
—
95.9
—
ID=60A
Ciss
Input capacitance
—
3627
—
VGS = 0V
Coss
Output capacitance
—
391
—
Crss
Reverse transfer capacitance
—
275
—
mΩ
V
μA
nA
Conditions
VGS = 0V, ID = 250μA
VGS=10V,ID = 30A
TJ = 125°C
VDS = VGS, ID = 250μA
TJ = 125°C
VDS = 68V,VGS = 0V
TJ = 125°C
VGS =20V
VGS = -20V
ID = 50A,
nC
ns
pF
VDS=48V,
RL=1Ω,
RGEN=2.55Ω
VDS = 25V
ƒ =1MHz
Source-Drain Ratings and Characteristics
Symbol
IS
ISM
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Min.
Typ.
Max.
Units
—
—
79
A
—
—
316
A
Conditions
MOSFET symbol
showing
the
integral reverse
p-n junction diode.
VSD
Diode Forward Voltage
—
0.80
1.3
V
IS=30A, VGS=0V
trr
Reverse Recovery Time
—
29.4
—
ns
TJ = 25°C, IF =68A, di/dt =
Qrr
Reverse Recovery Charge
—
30.2
—
nC
100A/μs
©Silikron Semiconductor CO.,LTD.
2011.05.25
www.silikron.com
Version : 1.0
page 2 of 8
SSF6808D
Test circuits and Waveforms
Switch Waveforms:
Notes:
①The maximum current rating is limited by bond-wires.
②Repetitive rating; pulse width limited by max. junction temperature.
③The power dissipation PD is based on max. junction temperature, using junction-to-case thermal
resistance.
④The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a
still air environment with TA =25°C
⑤These curves are based on the junction-to-case thermal impedence which is measured with the
device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C.
⑥ The maximum current rating is limited by bond-wires.
©Silikron Semiconductor CO.,LTD.
2011.05.25
www.silikron.com
Version : 1.0
page 3 of 8
SSF6808D
Typical electrical and thermal characteristics
Figure 2. Gate to source cut-off voltage
Figure 1: Typical Output Characteristics
Figure 3. Drain-to-Source Breakdown Voltage vs.
Temperature
©Silikron Semiconductor CO.,LTD.
Figure 4: Normalized On-Resistance Vs. Case
Temperature
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SSF6808D
Typical electrical and thermal characteristics
Figure 5. Maximum Drain Current Vs. Case
Figure 6.Typical Capacitance Vs. Drain-to-Source
Temperature
Voltage
Case Temperature
Figure7. Maximum Effective Transient Thermal Impedance, Junction-to-Case
©Silikron Semiconductor CO.,LTD.
2011.05.25
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Version : 1.0
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SSF6808D
Mechanical Data：
DPAK PACKAGE OUTLINE DIMENSION
Symbol
A
A1
B
B1
C
D
D1
D2
E
E1
e
H
F
K
V2
Dimension In Millimeters
Nom
Max
2.300
2.380
1.010
1.110
0.760
0.810
5.330
5.460
0.510
0.560
6.100
6.200
5.350 (REF)
2.900 (REF)
6.500
6.600
6.700
4.83 (REF)
2.186
2.286
2.386
9.800
10.100
10.400
1.400
1.500
1.700
1.600 (REF)
Min
2.200
0.910
0.710
5.130
0.460
6.000
©Silikron Semiconductor CO.,LTD.
Min
0.087
0.036
0.028
0.202
0.018
0.236
0.256
0.086
0.386
0.055
80 (REF)
Dimension In Inches
Nom
0.091
0.040
0.030
0.210
0.020
0.240
0.211 (REF)
0.114 (REF)
0.260
0.190 (REF)
0.090
0.398
0.059
0.063 (REF)
Max
0.094
0.044
0.032
0.215
0.022
0.244
0.264
0.094
0.409
0.067
80 (REF)
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SSF6808D
Ordering and Marking Information
Device Marking: SSF6808D
Package (Available)
DPAK
Operating Temperature Range
C : -55 to 175 ºC
Devices per Unit
Package
Type
DPAK
Units/
Tube
Tubes/Inner
Box
80
50
Reliability Test Program
Test Item
Conditions
High
Temperature
Reverse
Bias(HTRB)
High
Temperature
Gate
Bias(HTGB)
Units/Inner Inner
Box
Boxes/Carton
Box
4000
10
Duration
Sample Size
Tj=125℃ to 175℃ @
80% of Max
VDSS/VCES/VR
168 hours
500 hours
1000 hours
3 lots x 77 devices
Tj=150℃ or 175℃ @
100% of Max VGSS
168 hours
500 hours
1000 hours
3 lots x 77 devices
©Silikron Semiconductor CO.,LTD.
2011.05.25
www.silikron.com
Version : 1.0
Units/Carton
Box
40000
page 7 of 8
SSF6808D
ATTENTION:
■
■
■
■
■
■
■
■
■
Any and all Silikron products described or contained herein do not have specifications that can handle applications
that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other
applications whose failure can be reasonably expected to result in serious physical and/or material damage.
Consult with your Silikron representative nearest you before using any Silikron products described or contained
herein in such applications.
Silikron assumes no responsibility for equipment failures that result from using products at values that exceed,
even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed
in products specifications of any and all Silikron products described or contained herein.
Specifications of any and all Silikron products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees of the
performance, characteristics, and functions of the described products as mounted in the customer’s products or
equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer
should always evaluate and test devices mounted in the customer’s products or equipment.
Silikron Semiconductor CO.,LTD. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to
accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause
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events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for
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Any and all information described or contained herein are subject to change without notice due to
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without notice.
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[email protected]
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©Silikron Semiconductor CO.,LTD.
2011.05.25
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