SSF6014J8
Main Product Characteristics:
VDSS
60V
RDS(on)
16mΩ (typ.)
ID
22A
DFN3.3x3.3
Features and Benefits:
PinAssignment
Schematic diagram
Bottom view
Advanced trench MOSFET process technology
Special designed for PWM, load switching and
general purpose applications
Ultra low on-resistance with low gate charge
Fast switching and reverse body recovery
175℃ operating temperature
Description:
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the
on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely
efficient and reliable device for use in power switching application and a wide variety of other applications
Absolute max Rating:
Symbol
Parameter
Max.
Units
ID @ TC = 25℃
Continuous Drain Current, VGS @ 10V①
22
IDM
Pulsed Drain Current②
88
PD @TC = 25℃
Power Dissipation③
48
W
VDS
Drain-Source Voltage
60
V
VGS
Gate-to-Source Voltage
± 20
V
EAS
Single Pulse Avalanche Energy @ L=0.3mH②
60
mJ
IAR
Avalanche Current @ L=0.3mH②
20
A
-55 to + 175
℃
TJ
TSTG
Operating Junction and Storage Temperature Range
A
Thermal Resistance
Symbol
Characterizes
Typ.
Max.
Units
RθJC
Junction-to-case③
—
3.1
℃/W
RθJA
Junction-to-ambient (t ≤ 10s) ④
—
53
℃/W
©Silikron Semiconductor CO.,LTD.
2015.01.20
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Version : 1.0
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SSF6014J8
Electrical Characterizes @TA=25℃ unless otherwise specified
Symbol
Parameter
V(BR)DSS
Drain-to-Source breakdown voltage
RDS(on)
Static Drain-to-Source on-resistance
VGS(th)
Gate threshold voltage
IDSS
Drain-to-Source leakage current
IGSS
Gate-to-Source forward leakage
Qg
Min.
Typ.
Max.
Units
60
—
—
V
—
16
18
—
23.5
—
1
—
3
—
1
—
—
—
1
—
—
50
—
—
100
-100
—
—
Total gate charge
—
45
—
Qgs
Gate-to-Source charge
—
4
—
Qgd
Gate-to-Drain("Miller") charge
—
15
—
td(on)
Turn-on delay time
—
15
—
tr
Rise time
—
14
—
td(off)
Turn-Off delay time
—
40
—
tf
Fall time
—
7.3
—
Ciss
Input capacitance
—
1299
—
Coss
Output capacitance
—
164
—
Crss
Reverse transfer capacitance
—
120
—
mΩ
V
μA
nA
Conditions
VGS = 0V, ID = 250μA
VGS=10V,ID = 30A
TJ = 125℃
VDS = VGS, ID = 250μA
TJ = 125℃
VDS = 60V,VGS = 0V
TJ = 125℃
VGS =20V
VGS = -20V
ID = 15A,
nC
VDS=30V,
VGS = 10V
VGS=10V, VDS=30V,
ns
RL=15Ω,
RGEN=2.55Ω
VGS = 0V
pF
VDS = 25V
ƒ = 1MHz
Source-Drain Ratings and Characteristics
Symbol
IS
ISM
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Min.
Typ.
Max.
Units
—
—
22
A
—
—
88
A
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
VSD
Diode Forward Voltage
—
—
1.3
V
IS=20A, VGS=0V
trr
Reverse Recovery Time
—
33
—
ns
TJ = 25℃, IF =15A,
Qrr
Reverse Recovery Charge
—
61
—
nC
di/dt = 100A/μs
©Silikron Semiconductor CO., LTD.
2015.01.20
www.silikron.com
Version: 1.0
page 2 of 8
SSF6014J8
Test circuits and Waveforms
Switch Waveforms:
Notes:
①The maximum current rating is limited by bond-wires.
②Repetitive rating; pulse width limited by max. junction temperature.
③The power dissipation PD is based on max. junction temperature, using junction-to-case thermal
resistance.
④The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a
still air environment with TA =25℃
⑤These curves are based on the junction-to-case thermal impedence which is measured with the
device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175℃.
⑥ The maximum current rating is limited by bond-wires.
©Silikron Semiconductor CO., LTD.
2015.01.20
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Version: 1.0
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SSF6014J8
Typical electrical and thermal characteristics
Figure 2. Gate to source cut-off voltage
Figure 1: Typical Output Characteristics
Figure 3. Drain-to-Source Breakdown Voltage vs.
Temperature
©Silikron Semiconductor CO., LTD.
Figure 4: Normalized On-Resistance Vs. Case
Temperature
2015.01.20
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SSF6014J8
Typical electrical and thermal characteristics
Figure 5. Maximum Drain Current Vs. Case
Figure 6.Typical Capacitance Vs. Drain-to-Source
Temperature
Voltage
Case Temperature
Figure7. Maximum Effective Transient Thermal Impedance, Junction-to-Case
©Silikron Semiconductor CO., LTD.
2015.01.20
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Version: 1.0
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SSF6014J8
Mechanical Data：
©Silikron Semiconductor CO., LTD.
2015.01.20
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Version: 1.0
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SSF6014J8
Ordering and Marking Information
Device Marking: SSF6014J8
Package (Available)
DFN3.3x3.3
Operating Temperature Range
C : -55 to 175 ℃
Reliability Test Program
Test Item
Conditions
High
Temperature
Reverse
Bias(HTRB)
High
Temperature
Gate
Bias(HTGB)
Duration
Sample Size
Tj=125℃ to 175℃ @
80% of Max
VDSS/VCES/VR
168 hours
500 hours
1000 hours
3 lots x 77 devices
Tj=150℃ or 175℃ @
100% of Max VGSS
168 hours
500 hours
1000 hours
3 lots x 77 devices
©Silikron Semiconductor CO., LTD.
2015.01.20
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Version: 1.0
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SSF6014J8
ATTENTION:
■
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■
■
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Any and all Silikron products described or contained herein do not have specifications that can handle applications
that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other
applications whose failure can be reasonably expected to result in serious physical and/or material damage.
Consult with your Silikron representative nearest you before using any Silikron products described or contained
herein in such applications.
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even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed
in products specifications of any and all Silikron products described or contained herein.
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