KSMB7N80 800V N-channel MOSFET KERSMI ELECTRONIC CO.,LTD. Description This N-channel MOSFET s use advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features 1) 2) 3) 4) BVDSS RDSON ID 800V 1.6Ω 7A Low gate charge. Green device available. Advanced high cell denity trench technology for ultra RDS(ON) Excellent package for good heat dissipation. TO-263 Absolute Maximum Ratings TC=25℃,unless otherwise noted Symbol Parameter Ratings Units VDS Drain-Source Voltage 800 VGS Gate-Source Voltage ±20 V V Continuous Drain Current-1 7.0 Continuous Drain Current-T=100℃ 4.2 Pulsed Drain Current2 26.4 EAS Single Pulse Avalanche Energy3 580 PD Power Dissipation4 167 TJ, TSTG Operating and Storage Junction Temperature Range -55 to +155 ID A mJ W ℃ Thermal Characteristics www.kersemi.com 1 KSMB7N80 KERSMI ELECTRONIC CO.,LTD. Symbol Parameter Ratings RƟJC Thermal Resistance ,Junction to Case1 0.75 RƟJA Thermal Resistance, Junction to Ambient1 62.5 Units ℃/W Package Marking and Ordering Information Part NO. Marking Package KSMB7N80 KSMB7N80 TO-263 Electrical Characteristics TC=25℃ Symbol Parameter unless otherwise noted Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Sourtce Breakdown Voltage VDS=0V,ID=250μA 800 — — IDSS Zero Gate Voltage Drain Current VDS=0V, VDS=32V — — 10 IGSS Gate-Source Leakage Current VDS=±20V, VDS=0A — — ±100 v μA nA VDS=VDS, ID=250μA 3.0 — 5.0 V VDS=10V,ID=6A — 1.2 1.6 VDS=2.5V,ID=5A — — — VDS=5V,ID=12A — 5 — — 1420 1850 — 150 195 — 19 25 — 35 80 — 80 170 — 95 200 On Characteristics VGS(th) GATE-Source Threshold Voltage RDS(ON) Drain-Source On Resistance² GFS Forward Transconductance Ω --S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS=15V,VGS=0V, f=1MHz pF Switching Characteristics td(off) Turn-Off Delay Time tf Fall Time — 55 120 Qg Total Gate Charge — 40 52 Qgs Gate-SourceCharge VGS=4.5V, VDS=20V, — 8.5 — Qgd Gate-Drain “Miller” Charge ID=6A — 20 — ns ns ns ns nC nC nC — — 1.4 V — 400 — ns — 4.3 — nC td(on) Turn-On Delay Time tr Rise Time VDS=20V, VGS=10V,RGEN=3.3Ω Drain-Source Diode Characteristics VSD Source-Drain Diode ForwardVoltage² trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS=0V,IS =1A IF=7A,di/dt=100A/μS www.kersemi.com 2 KSMB7N80 KERSMI ELECTRONIC CO.,LTD. Notes: 1. The data tested by surface mounted on a 1 inch²FR-4 board 2OZ copper. 2. The data tested by pulse width≤300us,duty cycle≤2% 3. The EAS data shows Max rating.The test condition is VDD=25v,VGS=10V,L=0.1mH,iAS=17.8A 4. The power dissipation is limited by 150℃ junction temperature. Typical Characteristics TJ=25℃ unless otherwise noted Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics Figure 3. Capacitance Characteristics Figure 4. On-Resistance Variation vs. Drain Current and Gate Voltage www.kersemi.com 3 KSMB7N80 KERSMI ELECTRONIC CO.,LTD. Figure 5. Gate Charge Characteristics Figure 7.Breakdown Voltage Variation vs. Temperature Figure 6. Body Diode Forward Voltage Variation vs. Source Current and Temperature Figure 8.Maximum Safe Operating Area Figure 9. Transient Thermal Response Curve www.kersemi.com 4