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KSMB4N80
800V N-channel MOSFET
KERSMI ELECTRONIC CO.,LTD.
Description
This N-channel MOSFETS use advanced trench technology and design to provide
excellent RDS(on) with low gate charge. It can be used in a wide variety of applications.
Features
1)
2)
3)
4)
BVDSS
RDSON
ID
800V
3.3Ω
4A
Low gate charge.
Green device available.
Advanced high cell denity trench technology for ultra RDS(ON)
Excellent package for good heat dissipation.
TO-263
Absolute Maximum Ratings TC=25℃,unless otherwise noted
Symbol
Parameter
Ratings
Units
VDS
Drain-Source Voltage
800
VGS
Gate-Source Voltage
±20
V
V
Continuous Drain Current-1
4.0
Continuous Drain Current-T=100℃
2.47
Pulsed Drain Current2
15.6
EAS
Single Pulse Avalanche Energy3
460
PD
Power Dissipation4
130
TJ, TSTG
Operating and Storage Junction Temperature
Range
-55 to
+150
ID
A
mJ
W
℃
Thermal Characteristics
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KSMB4N80
KERSMI ELECTRONIC CO.,LTD.
Symbol
Parameter
Ratings
RƟJC
Thermal Resistance, Junction to Case1
0.96
RƟJA
Thermal Resistance ,Junction to Ambient1
62.5
Units
℃/W
Package Marking and Ordering Information
Part NO.
Marking
Package
KSMB4N80
KSMB4N80
TO-263
Electrical Characteristics TC=25℃
Symbol
Parameter
unless otherwise noted
Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain-Sourtce Breakdown Voltage
VDS=0V,ID=250μA
800
—
—
IDSS
Zero Gate Voltage Drain Current
VDS=0V, VDS=32V
—
—
10
IGSS
Gate-Source Leakage Current
VDS=±20V, VDS=0A
—
—
±100
v
μA
nA
VDS=VDS, ID=250μA
3.0
—
5.0
V
VDS=10V,ID=6A
—
2.8
3.3
VDS=2.5V,ID=5A
—
—
—
VDS=5V,ID=12A
—
3.8
—
—
16
40
—
45
100
—
35
80
—
16
40
—
45
100
—
35
80
On Characteristics
VGS(th)
GATE-Source Threshold Voltage
RDS(ON)
Drain-Source On Resistance²
GFS
Forward Transconductance
Ω
--S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS=15V,VGS=0V,
f=1MHz
pF
Switching Characteristics
td(off)
Turn-Off Delay Time
tf
Fall Time
—
35
80
Qg
Total Gate Charge
—
19
25
Qgs
Gate-Source Charge
VGS=4.5V, VDS=20V,
—
4.2
—
Qgd
Gate-Drain “Miller” Charge
ID=6A
—
9.1
—
ns
ns
ns
ns
nC
nC
nC
—
—
1.4
V
—
575
—
ns
—
3.65
—
nC
td(on)
Turn-On Delay Time
tr
Rise Time
VDS=20V,
VGS=10V,RGEN=3.3Ω
Drain-Source Diode Characteristics
VSD
Source-Drain Diode ForwardVoltage²
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS=0V,IS =1A
IF=7A,di/dt=100A/μS
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KSMB4N80
KERSMI ELECTRONIC CO.,LTD.
Notes:
1. The data tested by surface mounted on a 1 inch²FR-4 board 2OZ copper.
2. The data tested by pulse width≤300us,duty cycle≤2%
3. The EAS data shows Max. rating. The test condition is VDD=25v,VGS=10V,L=0.1mH,iAS=17.8A
4. The power dissipation is limited by 150℃ junction temperature.
Typical Characteristics TJ=25℃
Figure 1. On-Region Characteristics
Figure 3. Capacitance Characteristics
unless otherwise noted
Figure 2. Transfer Characteristics
Figure 4. On-Resistance Variation vs.
Drain Current and Gate Voltage
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KSMB4N80
KERSMI ELECTRONIC CO.,LTD.
Figure 5. Gate Charge Characteristics
Figure 7.Breakdown Voltage Variation
vs. Temperature
Figure 6. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
Figure 8.Maximum Safe Operating Area
Figure 9. Transient Thermal Response Curve
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