SSTS20100R/RF Main Product Characteristics: IF 20A VRRM 100V Tj(max) 150℃ Vf(max) 0.8V TO126 TO126F SSTS20100R SSTS20100RF Schematic Diagram Features and Benefits: High Junction Temperature High ESD Protection High Forward & Reverse Surge capability Description: Schottky Barrier Rectifier designed for high frequency switch model power supplies such as adaptors and DC/DC convertors; this product special design for high forward and reverse surge capability Absolute Rating: Symbol Value Unit Peak Repetitive Reverse Voltage 100 V RMS Reverse Voltage 70 V IF(AV) Average Forward Current 20 A IFSM Non Repetitive Surge Forward Current(tp=8.3ms sinusoidal) 150 A IRRM Peak Repetitive Reverse Surge Current(Tp=2us) 0.5 A TJ Maximum operation Junction Temperature Range -55~150 ℃ Tstg Storage Temperature Range -55~150 ℃ Value Unit TO126 5 ℃/W TO126F 13 ℃/W VRRM VR(RMS) Characterizes Thermal Resistance Symbol RθJC RθJC Characterizes Maximum Thermal Resistance Junction To Case(per leg) Electrical Characterizes @TA=25℃ unless otherwise specified Symbol Characterizes VR Reverse Breakdown Voltage VF Forward Voltage Drop IR Leakage Current ©Silikron Semiconductor CO., LTD. Min Typ Max 100 V 0.8 0.75 0.1 20 2011.8.19 www.silikron.com Unit V mA Version: 1.0 Test Condition IR=0.5mA IF=20A, TJ=25℃ IF=20A, TJ=125℃ VR=100V, TJ=25℃ VR=100V, TJ=125℃ page 1of6 SSTS20100R/RF I-V Curves: Figure 1：Typical Forward Characteristics Figure 2：Typical Capacitance Characteristics Figure 3：Typical Reverse Characteristics ©Silikron Semiconductor CO., LTD. 2011.8.19 www.silikron.com Version: 1.0 page 2of6 SSTS20100R/RF Mechanical Data： TO126: ©Silikron Semiconductor CO., LTD. 2011.8.19 www.silikron.com Version: 1.0 page 3of6 SSTS20100R/RF TO126F： ©Silikron Semiconductor CO., LTD. 2011.8.19 www.silikron.com Version: 1.0 page 4of6 SSTS20100R/RF Ordering and Marking Information Device Marking: SSTS200100R&SSTS20100RF Package (Available) TO-126&TO126F Operating Temperature Range C : -55 to 150 ºC Devices per Unit Packag Units/ Tubes/Inne Units/Inne e Type Tube r r Box Box 50 20 1000 TO126 20 1000 TO126F 50 Reliability Test Program Test Item Conditions High Temperature Reverse Bias(HTRB) Tj=125℃ to 175℃ @ 80% of Max VDSS/VCES/VR ©Silikron Semiconductor CO., LTD. Inner Boxes/Carton Box Units/Carto n Box 6 6000 6 6000 Duration Sample Size 168 hours 500 hours 1000 hours 3 lots x 77 devices 2011.8.19 www.silikron.com Version: 1.0 page 5of6 SSTS20100R/RF ATTENTION: ■ ■ ■ ■ ■ ■ ■ ■ ■ Any and all Silikron products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your Silikron representative nearest you before using any Silikron products described or contained herein in such applications. 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However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all Silikron products(including technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of Silikron Semiconductor CO.,LTD. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. Silikron believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the Silikron product that you intend to use. This catalog provides information as of Dec, 2008. Specifications and information herein are subject to change without notice. Customer Service Worldwide Sales and Service: [email protected] Technical Support: [email protected] Suzhou Silikron Semiconductor Corp. 11A, 428 Xinglong Street, Suzhou Industrial Park, P.R.China TEL: (86-512) 62560688 FAX: (86-512) 65160705 E-mail: [email protected] ©Silikron Semiconductor CO., LTD. 2011.8.19 www.silikron.com Version: 1.0 page 6of6