INTERSIL 5962F9563002V9A

Rad-Hard 16 Channel CMOS Analog Multiplexer with
High-Z Analog Input Protection
HS-1840ARH, HS-1840AEH,
HS-1840BRH
Features
TheHS-1840ARH, HS-1840AEH, HS-1840BRH are radiation hardened,
monolithic 16 channel multiplexers constructed with the Intersil RadHard Silicon Gate, bonded wafer, Dielectric Isolation process. They are
designed to provide a high input impedance to the analog source if
device power fails (open), or the analog signal voltage inadvertently
exceeds the supply by up to ±35V, regardless of whether the device is
powered on or off. Excellent for use in redundant applications, since the
secondary device can be operated in a standby unpowered mode
affording no additional power drain. More significantly, a very high
impedance exists between the active and inactive devices preventing
any interaction. One of sixteen channel selections is controlled by a 4-bit
binary address plus an Enable-Inhibit input which conveniently controls
the ON/OFF operation of several multiplexers in a system. All inputs
have electrostatic discharge protection. The HS-1840ARH,
HS-1840AEH, HS-1840BRH are processed and screened in full
compliance with MIL-PRF-38535 and QML standards. The devices are
available in a 28 Ld SBDIP and a 28 Ld Ceramic Flatpack.
• QML Qualified per MIL-PRF-38535 Requirements
• Electrically Screened to SMD # 5962-95630
• Pin-to-Pin for Intersil’s HS-1840RH and HS-1840/883S
• Improved Radiation Performance
- Gamma Dose (γ) 3x105RAD(Si)
• Improved rDS(ON) Linearity
• Improved Access Time 1.5µs (Max) Over Temp and Post Rad
• High Analog Input Impedance 500MΩ During Power Loss (Open)
• ±35V Input Overvoltage Protection (Power On or Off)
• Dielectrically Isolated Device Islands
• Excellent in Hi-Rel Redundant Systems
• Break-Before-Make Switching
• No Latch-Up
Specifications for Rad Hard QML devices are controlled by the
Defense Logistics Agency Land and Maritime (DLA). The SMD
numbers listed here must be used when ordering.
Detailed Electrical Specifications for these devices are contained in
SMD 5962-95630. A “hot-link” is provided on our homepage for
downloading:
http://www.landandmaritime.dla.mil/Downloads/MilSpec/Smd/956
30.pdf
November 17, 2011
FN4355.4
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 1-888-468-3774 | Copyright Intersil Americas Inc. 2002, 2009, 2010, 2011. All Rights Reserved
Intersil (and design) is a trademark owned by Intersil Corporation or one of its subsidiaries.
All other trademarks mentioned are the property of their respective owners.
HS-1840ARH, HS-1840AEH, HS-1840BRH
Ordering Information
ORDERING
NUMBER
INTERNAL
MKT. NUMBER
PART
MARKING NO.
TEMP. RANGE (°C)
PACKAGE
5962F9563002QXC
HS1-1840ARH-8
-55 to +125
Q 5962F95 63002QXC
28 Ld SBDIP
5962F9563002QYC
HS9-1840ARH-8
-55 to +125
Q 5962F95 63002QYC
28 Ld Flatpack
5962F9563002VXC
HS1-1840ARH-Q
-55 to +125
Q 5962F95 63002VXC
28 Ld SBDIP
5962F9563002VYC
HS9-1840ARH-Q
-55 to +125
Q 5962F95 63002VYC
28 Ld Flatpack
HS1-1840ARH/PROTO
HS1-1840ARH/PROTO
-55 to +125
HS1- 1840ARH /PROTO
28 Ld SBDIP
HS9-1840ARH/PROTO
HS9-1840ARH/PROTO
-55 to +125
HS9- 1840ARH /PROTO
28 Ld Flatpack
HS1-1840ARH-T
HS1-1840ARH-T
-55 to +125
Q 5962R95 63002TXC
28 Ld SBDIP
5962F9563002V9A
HS0-1840ARH-Q
-55 to +125
5962F9563004V9A
HS0-1840AEH-Q
-55 to +125
5962F9563004VXC
HS1-1840AEH-Q
-55 to +125
Q 5962F95 63004VXC
28 Ld SBDIP
5962F9563004VYC
HS9-1840AEH-Q
-55 to +125
Q 5962F95 63004VYC
28 Ld Flatpack
5962F9563003QXC
HS1-1840BRH-8
-55 to +125
Q 5962F95 63003QXC
28 Ld SBDIP
5962F9563003QYC
HS9-1840BRH-8
-55 to +125
Q 5962F95 63003QYC
28 Ld Flatpack
5962F9563003VXC
HS1-1840BRH-Q
-55 to +125
Q 5962F95 63003VXC
28 Ld SBDIP
5962F9563003VYC
HS9-1840BRH-Q
-55 to +125
Q 5962F95 63003VYC
28 Ld Flatpack
HS1-1840BRH/PROTO
HS1-1840BRH/PROTO
-55 to +125
HS1- 1840BRH /PROTO
28 Ld SBDIP
HS9-1840BRH/PROTO
HS9-1840BRH/PROTO
-55 to +125
HS9- 1840BRH /PROTO
28 Ld Flatpack
5962F9563003V9A
HS0-1840BRH-Q
-55 to +125
Pin Configurations
HS9-1840ARH, HS9-1840AEH, HS9-1840BRH
(28 LD FLATPACK) CDFP3-F28
TOP VIEW
HS1-1840ARH, HS1-1840AEH, HS1-1840BRH
(28 LD SBDIP) CDIP2-T28
TOP VIEW
+VS 1
28 OUT
+VS
1
28
OUT
NC 2
27 -VS
NC
2
27
-VS
NC 3
26 IN 8
NC
3
26
IN 8
IN 16
4
25
IN 7
IN 15
5
24
IN 6
IN 14
6
23
IN 5
IN 16 4
25 IN 7
IN 15 5
24 IN 6
IN 14 6
23 IN 5
IN 13
7
22
IN 4
IN 13 7
22 IN 4
IN 12
8
21
IN 3
IN 12 8
21 IN 3
IN 11
9
20
IN 2
20 IN 2
IN 10
10
19
IN 1
IN 9
11
18
ENABLE
GND
12
17
ADDR A0
(+5VS) VREF
13
16
ADDR A1
ADDR A3
14
15
ADDR A2
IN 11 9
19 IN 1
IN 10 10
IN 9 11
18 ENABLE
GND 12
17 ADDR A0
(+5VS) VREF 13
16 ADDR A1
ADDR A3 14
15 ADDR A2
2
FN4355.4
November 17, 2011
HS-1840ARH, HS-1840AEH, HS-1840BRH
Functional Diagram
VDD
IN1
A0
1
MAINSWITCH 1
A1
DIGITAL
ADDRESS
A2
A3
OUT
IN16
16
EN
MAINSWITCH 16
ADDRESS INPUT
BUFFER AND
LEVEL SHIFTER
DECODERS
MULTIPLEX
SWITCHES
NOTE: MAINSWITCH INXX: SWITCH ON, BODY TIED TO SOURCE
SWITCH OFF, BODY TIED TO VCC-0.7V
TABLE 1. TRUTH TABLE
A3
A2
A1
A0
EN
“ON” CHANNEL
X
X
X
X
H
None
L
L
L
L
L
1
L
L
L
H
L
2
L
L
H
L
L
3
L
L
H
H
L
4
L
H
L
L
L
5
L
H
L
H
L
6
L
H
H
L
L
7
L
H
H
H
L
8
H
L
L
L
L
9
H
L
L
H
L
10
H
L
H
L
L
11
H
L
H
H
L
12
H
H
L
L
L
13
H
H
L
H
L
14
H
H
H
L
L
15
H
H
H
H
L
16
3
FN4355.4
November 17, 2011
HS-1840ARH, HS-1840AEH, HS-1840BRH
Burn-In/Life Test Circuits
R
+VS
R
1
28
2
27
3
26
25
4
5
6
F4
-VS
R
R
24
23
8
22
21
7
GND
+VS
9
20
10
19
11
12
18
F5
F1
13
17
16
14
15
F3
F2
GND
VR
28
27
26
25
24
23
22
21
20
19
18
17
16
15
1
2
3
4
5
6
7
8
9
10
11
12
13
14
R
-VS
R
R
NOTE:
R = 1kΩ ±5%, 1/4W.
C1 = C2 = 0.01µF MINIMUM, 1 EACH PER SOCKET, MINIMUM.
VS+ = 15.5V ±0.5V, VS- = -15.5V ±0.5V, VR = 15.5 ±0.5V
NOTE:
VS+ = +15.5V ±0.5V, VS- = -15.5V ±0.5V.
R = 1kΩ ±5%.
C1 = C2 = 0.01µF ±10%, 1 EACH PER SOCKET, MINIMUM.
D1 = D2 = 1N4002, 1 EACH PER BOARD, MINIMUM.
INPUT SIGNALS:
SQUARE WAVE, 50% DUTY CYCLE, 0V TO 15V PEAK ±10%.
F1 = 100kHz; F2 = F1/2; F3 = F1/4; F4 = F1/8; F5 = F1/16.
FIGURE 2. .STATIC BURN-IN TEST CIRCUIT
FIGURE 1. DYNAMIC BURN-IN AND LIFE TEST CIRCUIT
NOTES:
1. The above test circuits are utilized for all package types.
2. The Dynamic Test Circuit is utilized for all life testing.
Irradiation Circuit
HS-1840ARH, HS-1840AEH, HS-1840BRH
+15V
1
28
NC
2
27
NC
3
26
+1V
4
25
5
24
6
23
7
22
8
21
9
20
10
19
11
18
12
17
13
16
14
15
-15V
1kΩ
+5V
NOTE:
3. All irradiation testing is performed in the 28 lead CERDIP package.
4
FN4355.4
November 17, 2011
HS-1840ARH, HS-1840AEH, HS-1840BRH
Die Characteristics
DIE DIMENSIONS:
ASSEMBLY RELATED INFORMATION:
(2820µmx4080µm x 483µm ±25.4μm)
111 milsx161 milsx19 mils ±1 mil
Substrate Potential:
Unbiased (DI)
INTERFACE MATERIALS:
ADDITIONAL INFORMATION:
Glassivation:
Worst Case Current Density:
Type: PSG (Phosphorus Silicon Glass)
Thickness: 8.0kÅ ±1kÅ
Modified SEM
Transistor Count:
Top Metallization:
407
Type: AlSiCu
Thickness: 16.0kÅ ±2kÅ
Process:
Radiation Hardened Silicon Gate,
Bonded Wafer, Dielectric Isolation
Backside Finish:
Silicon
Metallization Mask Layout
IN1
IN2
IN3
IN4
IN5
IN6
IN7
HS-1840ARH, HS-1840BRH
IN8
ENABLE
A0
-V
A1
OUT
A2
A3
+V
VREF
IN16
5
IN9
IN10
IN11
IN12
IN13
IN14
IN15
GND
FN4355.4
November 17, 2011
HS-1840ARH, HS-1840AEH, HS-1840BRH
Ceramic Dual-In-Line Metal Seal Packages (SBDIP)
D28.6 MIL-STD-1835 CDIP2-T28 (D-10, CONFIGURATION C)
LEAD FINISH
c1
-A-
28 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE
-DBASE
METAL
E
b1
M
(b)
M
-Bbbb S C A - B S
(c)
SECTION A-A
D S
D
BASE
PLANE
Q
S2
-C-
SEATING
PLANE
A
L
S1
eA
A A
b2
b
e
eA/2
c
aaa M C A - B S D S
ccc M C A - B S D S
NOTES:
1. Index area: A notch or a pin one identification mark shall be located adjacent to pin one and shall be located within the shaded
area shown. The manufacturer’s identification shall not be used
as a pin one identification mark.
2. The maximum limits of lead dimensions b and c or M shall be
measured at the centroid of the finished lead surfaces, when
solder dip or tin plate lead finish is applied.
3. Dimensions b1 and c1 apply to lead base metal only. Dimension
M applies to lead plating and finish thickness.
4. Corner leads (1, N, N/2, and N/2+1) may be configured with a
partial lead paddle. For this configuration dimension b3 replaces
dimension b2.
5. Dimension Q shall be measured from the seating plane to the
base plane.
INCHES
SYMBOL
MIN
MILLIMETERS
MAX
MIN
MAX
NOTES
A
-
0.232
-
5.92
-
b
0.014
0.026
0.36
0.66
2
b1
0.014
0.023
0.36
0.58
3
b2
0.045
0.065
1.14
1.65
-
b3
0.023
0.045
0.58
1.14
4
c
0.008
0.018
0.20
0.46
2
c1
0.008
0.015
0.20
0.38
3
D
-
1.490
-
37.85
-
E
0.500
0.610
15.49
-
e
12.70
0.100 BSC
2.54 BSC
-
eA
0.600 BSC
15.24 BSC
-
eA/2
0.300 BSC
7.62 BSC
-
L
0.125
0.200
3.18
5.08
-
Q
0.015
0.060
0.38
1.52
5
S1
0.005
-
0.13
-
6
S2
0.005
-
0.13
-
7
α
90o
105o
90o
105o
-
aaa
-
0.015
-
0.38
-
bbb
-
0.030
-
0.76
-
ccc
-
0.010
-
0.25
-
M
-
0.0015
-
0.038
2
N
28
28
8
Rev. 0 5/18/94
6. Measure dimension S1 at all four corners.
7. Measure dimension S2 from the top of the ceramic body to the
nearest metallization or lead.
8. N is the maximum number of terminal positions.
9. Braze fillets shall be concave.
10. Dimensioning and tolerancing per ANSI Y14.5M - 1982.
11. Controlling dimension: INCH.
For additional products, see www.intersil.com/product_tree
Intersil products are manufactured, assembled and tested utilizing ISO9000 quality systems as noted
in the quality certifications found at www.intersil.com/design/quality
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time
without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be
accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third
parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see www.intersil.com
6
FN4355.4
November 17, 2011
HS-1840ARH, HS-1840AEH, HS-1840BRH
Ceramic Metal Seal Flatpack Packages (Flatpack)
K28.A MIL-STD-1835 CDFP3-F28 (F-11A, CONFIGURATION B)
28 LEAD CERAMIC METAL SEAL FLATPACK PACKAGE
A
A
e
INCHES
PIN NO. 1
ID AREA
SYMBOL
-A-
D
-B-
S1
b
E1
0.004 M
H A-B S
Q
D S
0.036 M
H A-B S
D S
C
E
-D-
A
-C-
-HL
E2
E3
SEATING AND
BASE PLANE
c1
L
E3
BASE
METAL
(c)
b1
M
M
(b)
SECTION A-A
MILLIMETERS
MAX
MIN
MAX
NOTES
A
0.045
0.115
1.14
2.92
-
b
0.015
0.022
0.38
0.56
-
b1
0.015
0.019
0.38
0.48
-
c
0.004
0.009
0.10
0.23
-
c1
0.004
0.006
0.10
0.15
-
D
-
0.740
-
18.80
3
E
0.460
0.520
E1
-
0.550
-
E2
0.180
-
4.57
-
-
E3
0.030
-
0.76
-
7
2
e
LEAD FINISH
MIN
11.68
0.050 BSC
13.21
-
13.97
3
1.27 BSC
-
k
0.008
0.015
0.20
0.38
L
0.250
0.370
6.35
9.40
-
Q
0.026
0.045
0.66
1.14
8
S1
0.00
-
0.00
-
6
M
-
0.0015
-
0.04
-
N
28
28
Rev. 0 5/18/94
NOTES:
1. Index area: A notch or a pin one identification mark shall be located adjacent to pin one and shall be located within the shaded
area shown. The manufacturer’s identification shall not be used
as a pin one identification mark. Alternately, a tab (dimension k)
may be used to identify pin one.
2. If a pin one identification mark is used in addition to a tab, the limits of dimension k do not apply.
3. This dimension allows for off-center lid, meniscus, and glass
overrun.
4. Dimensions b1 and c1 apply to lead base metal only. Dimension
M applies to lead plating and finish thickness. The maximum limits of lead dimensions b and c or M shall be measured at the centroid of the finished lead surfaces, when solder dip or tin plate
lead finish is applied.
5. N is the maximum number of terminal positions.
6. Measure dimension S1 at all four corners.
7. For bottom-brazed lead packages, no organic or polymeric materials shall be molded to the bottom of the package to cover the
leads.
8. Dimension Q shall be measured at the point of exit (beyond the
meniscus) of the lead from the body. Dimension Q minimum
shall be reduced by 0.0015 inch (0.038mm) maximum when solder dip lead finish is applied.
9. Dimensioning and tolerancing per ANSI Y14.5M - 1982.
10. Controlling dimension: INCH.
7
FN4355.4
November 17, 2011