INTERSIL HS0-201HSRH-Q

HS-201HSRH
®
Data Sheet
March 24, 2006
Radiation Hardened High Speed, Quad
SPST, CMOS Analog Switch
The HS-201HSRH is a monolithic CMOS analog switch
featuring power-off high input impedance, very fast switching
speeds and low ON resistance. Fabrication on our DI RSG
process assures SEL immunity and only very slight
sensitivity to low dose rate (ELDRS). These Class V/Q
devices are tested and guaranteed for 300krad (Si) total
dose performance.
Power-off high input impedance enables the use of this
device in redundant circuits without causing data bus signal
degradation. ESD protection, overvoltage protection, fast
switching times, low ON resistance, and guaranteed
radiation hardness, make the HS-201HSRH ideal for any
space application where improved switching performance is
required.
Specifications for Rad Hard QML devices are controlled by
the Defense Supply Center (DSCC). The SMD numbers
listed here must be used when ordering flight units.
Detailed electrical specifications for this device are
contained in SMD 5962-99618. A ”hot-link” is provided
on our homepage for downloading.
www.intersil.com/spacedefense/space.asp
Pinout
FN4874.1
Features
• Electrically Screened to DSCC SMD 5962-99618
• QML Qualified per MIL-PRF-38535
• Radiation Performance
- Guaranteed Total Dose Performance . . . . . 300krad (Si)
- SEL Immune. . . . . . . . . . . . . . . . . . . . .DI RSG Process
• Overvoltage Protection (Power On, Switch Off) . . . . . . ±30V
• Power Off High Impedance . . . . . . . . . . . . . . . . . . . ±17V
• Fast Switching Times
- tON . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 110ns (Max)
- tOFF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80ns (Max)
• Low “ON” Resistance . . . . . . . . . . . . . . . . . . . 50Ω (Max)
• Pin Compatible with Industry Standard 201 Types
• Operating Supply Range . . . . . . . . . . . . . . . . . ±10V to ±15V
• Wide Analog Voltage Range (±15V Supplies) . . . . . . . ±15V
• TTL Compatible
Applications
• High Speed Multiplexing
• Sample and Hold Circuits
• Digital Filters
HS1-201HSRH, SBDIP (CDIP2-T16)
HS9-201HSRH, FLATPACK (CDFP4-F16)
TOP VIEW
• Operational Amplifier Gain Switching Networks
• Integrator Reset Circuits
16 A2
A1 1
15 OUT2
OUT1 2
14 IN2
IN1 3
V- 4
13 V+
GND 5
12 NC
IN4 6
11 IN3
10 OUT3
OUT4 7
9 A3
A4 8
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
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HS-201HSRH
Ordering Information
INTERNAL
MKT. NUMBER
ORDERING NUMBER
PART MARKING
TEMP. RANGE
(°C)
PACKAGE
PKG. DWG. #
5962F9961801VEC
HS1-201HSRH-Q
Q 5962F9961801VEC
-55 to 125
16 Ld SBDIP
D16.3
5962F9961801QEC
HS1-201HSRH-8
Q 5962F9961801QEC
-55 to 125
16 Ld SBDIP
D16.3
5962F9961801VXC
HS9-201HSRH-Q
Q 5962F9961801VXC
-55 to 125
16 Ld Flatpack
K16.A
5962F9961801QXC
HS9-201HSRH-8
Q 5962F9961801QXC
-55 to 125
16 Ld Flatpack
K16.A
5962F9961801V9A
HS0-201HSRH-Q
-55 to 125
-
-
HS1-201HSRH/PROTO
HS1-201HSRH/PROTO
HS1-201HSRH/PROTO
-55 to 125
16 Ld SBDIP
D16.3
HS9-201HSRH/PROTO
HS9-201HSRH/PROTO
HS9-201HSRH/PROTO
-55 to 125
16 Ld Flatpack
K16.A
-
Die Characteristics
DIE DIMENSIONS
Backside Finish
2790µm x 4950µm (110 mils x 195 mils)
Thickness: 483µm ±25.4µm (19 mils ±1 mil)
Silicon
ASSEMBLY RELATED INFORMATION
INTERFACE MATERIALS
Substrate Potential
Glassivation
Unbiased (DI)
Type: Phosphorus Silicon Glass (PSG)
Thickness: 8.0kÅ +/-1.0kÅ
ADDITIONAL INFORMATION
Worst Case Current Density
Metallization
<2.0 x 105 A/cm2
Type: Ti/AlCu
Thickness: 16.0kÅ +/- 2kÅ
Transistor Count
328
Substrate
Rad Hard Silicon Gate, Dielectric Isolation
Metallization Mask Layout
HS-201HSRH
OUT4
IN4
GND
V-
IN1
OUT1
A4
A1
A3
A2
OUT3
IN3
2
V+
IN2
OUT2
FN4874.1
March 24, 2006
HS-201HSRH
Ceramic Metal Seal Flatpack Packages (Flatpack)
K16.A MIL-STD-1835 CDFP4-F16 (F-5A, CONFIGURATION B)
A
e
16 LEAD CERAMIC METAL SEAL FLATPACK PACKAGE
A
INCHES
PIN NO. 1
ID AREA
SYMBOL
-A-
D
-B-
S1
b
E1
0.004 M
H A-B S
Q
D S
0.036 M
H A-B S
D S
C
E
-D-
A
-C-
-HL
E2
E3
SEATING AND
BASE PLANE
c1
L
BASE
METAL
(c)
b1
M
M
(b)
SECTION A-A
NOTES:
MIN
MAX
NOTES
0.045
0.115
1.14
2.92
-
b
0.015
0.022
0.38
0.56
-
b1
0.015
0.019
0.38
0.48
-
c
0.004
0.009
0.10
0.23
-
c1
0.004
0.006
0.10
0.15
-
D
-
0.440
-
11.18
3
E
0.245
0.285
6.22
7.24
-
E1
-
0.315
-
8.00
3
E2
0.130
-
3.30
-
-
E3
0.030
-
0.76
-
7
0.38
2
k
LEAD FINISH
MILLIMETERS
MAX
A
e
E3
MIN
0.050 BSC
0.008
0.015
1.27 BSC
0.20
-
L
0.250
0.370
6.35
9.40
-
Q
0.026
0.045
0.66
1.14
8
S1
0.005
-
0.13
-
6
M
-
0.0015
-
0.04
-
N
16
16
Rev. 1 2-20-95
1. Index area: A notch or a pin one identification mark shall be located adjacent to pin one and shall be located within the shaded
area shown. The manufacturer’s identification shall not be used
as a pin one identification mark. Alternately, a tab (dimension k)
may be used to identify pin one.
2. If a pin one identification mark is used in addition to a tab, the limits of dimension k do not apply.
3. This dimension allows for off-center lid, meniscus, and glass
overrun.
4. Dimensions b1 and c1 apply to lead base metal only. Dimension
M applies to lead plating and finish thickness. The maximum limits of lead dimensions b and c or M shall be measured at the centroid of the finished lead surfaces, when solder dip or tin plate
lead finish is applied.
5. N is the maximum number of terminal positions.
6. Measure dimension S1 at all four corners.
7. For bottom-brazed lead packages, no organic or polymeric materials shall be molded to the bottom of the package to cover the
leads.
8. Dimension Q shall be measured at the point of exit (beyond the
meniscus) of the lead from the body. Dimension Q minimum
shall be reduced by 0.0015 inch (0.038mm) maximum when solder dip lead finish is applied.
9. Dimensioning and tolerancing per ANSI Y14.5M - 1982.
10. Controlling dimension: INCH
3
FN4874.1
March 24, 2006
HS-201HSRH
Ceramic Dual-In-Line Metal Seal Packages (SBDIP)
D16.3 MIL-STD-1835 CDIP2-T16 (D-2, CONFIGURATION C)
LEAD FINISH
c1
-A-
16 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE
-DBASE
METAL
E
b1
M
(b)
M
-Bbbb S C A - B S
(c)
SECTION A-A
D S
D
BASE
PLANE
Q
S2
-C-
SEATING
PLANE
A
L
S1
eA
A A
b2
b
e
eA/2
c
aaa M C A - B S D S
ccc M C A - B S D S
NOTES:
1. Index area: A notch or a pin one identification mark shall be located adjacent to pin one and shall be located within the shaded
area shown. The manufacturer’s identification shall not be used
as a pin one identification mark.
2. The maximum limits of lead dimensions b and c or M shall be
measured at the centroid of the finished lead surfaces, when
solder dip or tin plate lead finish is applied.
3. Dimensions b1 and c1 apply to lead base metal only. Dimension
M applies to lead plating and finish thickness.
4. Corner leads (1, N, N/2, and N/2+1) may be configured with a
partial lead paddle. For this configuration dimension b3 replaces
dimension b2.
5. Dimension Q shall be measured from the seating plane to the
base plane.
INCHES
SYMBOL
MIN
MILLIMETERS
MAX
MIN
MAX
NOTES
A
-
0.200
-
5.08
-
b
0.014
0.026
0.36
0.66
2
b1
0.014
0.023
0.36
0.58
3
b2
0.045
0.065
1.14
1.65
-
b3
0.023
0.045
0.58
1.14
4
c
0.008
0.018
0.20
0.46
2
c1
0.008
0.015
0.20
0.38
3
D
-
0.840
-
21.34
-
E
0.220
0.310
5.59
7.87
-
e
0.100 BSC
2.54 BSC
-
eA
0.300 BSC
7.62 BSC
-
eA/2
0.150 BSC
3.81 BSC
-
L
0.125
0.200
3.18
5.08
-
Q
0.015
0.060
0.38
1.52
5
S1
0.005
-
0.13
-
6
S2
0.005
-
0.13
-
7
α
90o
105o
90o
105o
-
aaa
-
0.015
-
0.38
-
bbb
-
0.030
-
0.76
-
ccc
-
0.010
-
0.25
-
M
-
0.0015
-
N
16
0.038
16
2
8
Rev. 0 4/94
6. Measure dimension S1 at all four corners.
7. Measure dimension S2 from the top of the ceramic body to the
nearest metallization or lead.
8. N is the maximum number of terminal positions.
9. Braze fillets shall be concave.
10. Dimensioning and tolerancing per ANSI Y14.5M - 1982.
11. Controlling dimension: INCH.
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from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
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4
FN4874.1
March 24, 2006