Evaluation Board EVAL-1ED020I12-B2

Eice DR IV ER ™
High voltage gate driver IC
E valu atio n B oar d
Application Note
EV AL_ 1E D02 0I1 2 - B2
Applic atio n N ote
Revision 1.0, 2013-07-26
Infin eon T echnol ogi es A G
Edition 2013-07-26
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2013 Infineon Technologies AG
All Rights Reserved.
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EiceDRIVER™ Driver IC Evaluation Board
EVAL_1ED020I12-B2 Application Note
Revision History: 2013-07 Rev.1.0
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Trademarks of Infineon Technologies AG
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of Cadence Design Systems, Inc. VLYNQ™ of Texas Instruments Incorporated. VXWORKS™, WIND RIVER™
of WIND RIVER SYSTEMS, INC. ZETEX™ of Diodes Zetex Limited.
Last Trademarks Update 2011-11-11
Revision 1.0, 2013-07-26
EiceDRIVER™ Driver IC Evaluation Board
EVAL_1ED020I12-B2 Application Note
Table of Contents
Table of Contents
1
Introduction ........................................................................................................................................ 5
2
2.1
2.2
2.3
2.4
Design feature .................................................................................................................................... 6
Main features........................................................................................................................................ 6
Key data ............................................................................................................................................... 7
Pin assignment ..................................................................................................................................... 8
IGBT Module EasyPACK 1B FS25R12W1T4_B11 .............................................................................. 8
3
3.1
3.2
3.3
3.4
3.5
3.6
3.7
Electrical features .............................................................................................................................. 9
Supply voltages +5V and +15V ............................................................................................................ 9
Under voltage lockout .......................................................................................................................... 9
VCEsat monitoring for short circuit detection ....................................................................................... 9
Active Miller clamping ........................................................................................................................ 10
IGBT turn - on / off .............................................................................................................................. 10
DC-Link capacitor ............................................................................................................................... 12
Input PWM-Signals............................................................................................................................. 12
4
4.1
4.2
4.2.1
4.2.2
4.2.3
4.2.4
4.3
Schematic and Layout ..................................................................................................................... 14
Schematic ........................................................................................................................................... 14
Layout ................................................................................................................................................. 17
Creepage distance ............................................................................................................................. 17
Layout top ........................................................................................................................................... 17
Layout bottom..................................................................................................................................... 17
Top place ............................................................................................................................................ 18
Bill of material ..................................................................................................................................... 19
Application Note
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EiceDRIVER™ Driver IC Evaluation Board
EVAL_1ED020I12-B2 Application Note
Introduction
1 Introduction
The gate driver evaluation board EVAL_1ED020I12-B2 was developed to show the functionalities and
key features of the Infineon IGBT gate driver 1ED020I12-B2 (applied also to 1ED020I12-F2).
The board is available from Infineon in sampling quantities. The properties of this part are described
in the datasheet chapter of this document, whereas the remaining paragraphs provide information
intended to enable the customer to copy, modify and qualify the design for production, according to
their own specific requirements.
The design of the EVAL_1ED020I12-B2 was performed with respect to the environmental
conditions described in this document. The design was tested as described in this document, but
not qualified regarding manufacturing, lifetime or over the full ambient operating conditions.
The boards provided by Infineon are subjected to functional testing only.
Due to their purpose Evaluation Boards are not subjected to the same procedures regarding Returned
Material Analysis (RMA), Process Change Notification (PCN) and Product Discontinuation (PD)
as regular products. These Evaluation Boards are used for development support only and should not
be used as reference design for volume production.
See Legal Disclaimer and Warnings for further restrictions on Infineons warranty and liability.
Application Note
5
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EiceDRIVER™ Driver IC Evaluation Board
EVAL_1ED020I12-B2 Application Note
Design feature
2 Design feature
This chapter provides an overview of the main features, key data, pin assignments and mechanical
dimensions
2.1 Main features
Figure 2-1 top view of the EVAL_1ED020I12-B2
The EVAL_1ED020I12-B2 contains two IGBT gate drivers 1ED020I12-B2 in a half bridge
configuration and an IGBT module FS25R12W1T4_B11 where only two IGBTs are connected.
The evaluation board provides the following main features
 Galvanic isolation by the coreless transformer technology of the Infineon gate driver. The gate
1ED020I12-B2 is suitable for basic isolation
 Isolation inside the half bridge by defined creepage
 Short circuit protection
 Under voltage lock out
 Active miller clamp
 Bootstrap functionality for high side IGBT
 Connector for 5V digital supply, 15V supply, Reset, High voltage supply, external load
 Status LED for 5V supply, 15V supply, ready and fault separated for high- and lowside driver
 DC link capacitor
Application Note
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EiceDRIVER™ Driver IC Evaluation Board
EVAL_1ED020I12-B2 Application Note
Design feature
Status LED Ready / Fault
External load
DC-link
HV-supply input
IGBT modul
5V, 15V supply input, Reset with status LEDs
Figure 2-2 overview functionalities on top-side
2.2 Key data
All values are values at an ambient temperature of 25°C.
Table 2-1
Parameter Description
Typ.
Min.
Max.
Unit
+15V
5V
HV
IOut
IGmax
RGmin
15
5
-
13
4.5
10
17.5
5.5
600
25
2
-
V
V
V
A
A
Ω
15V voltage supply
5V voltage supply
High voltage supply
Output current
Max. peak gate driver output current
Min. gate resistor to limit gate driver output
* Please make sure that the maximum rated value never get exceeded. Also the performance and quality can
not be guaranteed when using the board with all parameters in maximum rated value at the same time.
Application Note
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EiceDRIVER™ Driver IC Evaluation Board
EVAL_1ED020I12-B2 Application Note
Design feature
2.3 Pin assignment
Table 2-2
Connector name
Pin no.
Pin name
Description
RESET
Right terminal
Left terminal
/RST
GND
same as X1-B1
same as X1-A16
+5V (VCC1)
Left terminal
Right terminal
+5V
GND
positive 5V logic supply
same as X1-A16
+15V (VCC2)
Right terminal
Left terminal
+15V
GND
positive 15V supply for secondary side
X1
A16
B1
B2
B5
B6
B7
B8
B16
GND
/RST
/FLT
IN-T
IN-B
IN+T
IN+B
+5V
reference for 5V supply and input signals
input – 0V to reset circuit
output combined /Fault_T, /Fault_B, 0..5V
inverting input top IGBT; internal pull up
inverting input bottom IGBT; internal pull up
non-inverting input top IGBT; 0V off; 5V on
non-inverting input bottom IGBT; 0V off; 5V on
positive 5V supply
reference for high voltage supply (Power-GND,
internally connected to GND)
positive high voltage supply (up to 800V related
to GND_HV)
GND_HV
V+HV
OUT
Output HV half bridge (related to GND_HV)
2.4 IGBT Module EasyPACK 1B FS25R12W1T4_B11
There is an Infineon IGBT EasyPACK 1B module mounted to the evaluation board. For detailed
information refer to the Infineon webpage
http://www.infineon.com/dgdl/ds_fs25r12w1t4_b11_2_0_deen.pdf?folderId=db3a304412b407950112b4095b0601e3&fileId=db3a30432ad629a6012af0f40a895d
ed
Application Note
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EiceDRIVER™ Driver IC Evaluation Board
EVAL_1ED020I12-B2 Application Note
Electrical features
3 Electrical features
3.1 Supply voltages +5V and +15V
The supply voltage for the digital part (+5V VCC1) and for the driver output (+15V VCC2) has to be
supplied externally over the dedicated connectors. The evaluation board does not provide an over
voltage supply monitoring, therefore the user has to ensure that the voltages are in the correct range.
Voltages above the max. values will lead to damages of the IGBT drivers. The availability of the
supply voltages is visible over the green status LEDs.
The high-Side gate driver is supplied over a bootstrap diode DBOOT. To ensure that the bootstrap
capacitor is charged before the high side IGBT is switched on, the low side IGBT has to be switched
on for a dedicated time.
3.2 Under voltage lockout
The +15V supply VCC2 is monitored by the 1ED020I12-B2. In case of an undervoltage of <13V the
driver output is switched off. This status is visible over the yellow READY LEDs for top and bottom
side. If the LED is on, the +15V supply is >13V
3.3 VCEsat monitoring for short circuit detection
The Infineon gate driver 1ED020I12-B2 provides a short circuit detection by measuring the VCEsat
voltage of the IGBT. If a short circuit occurs, the collector current and the saturation voltage increase.
If the IGBT is commanded on stated and the VCE reaches 9V a short circuit is detected and the gate
driver output is switched off. This status is reported by the /FLT signal and the dedicated FAULT LED
is switched on.
Figure 3-1 shows the signals of the bottom side driver and IGBT during a shoot through.
IC
VCEsat
VGE
Figure 3-1 the signals of the bottom side driver and IGBT during a shoot through
(Ic curve with 1.2µs delay due to slow current probe)
The FAULT status is latched by the 1ED020I12-B2 and must be resetted by switching the RESET
Signal to ground.
Application Note
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EiceDRIVER™ Driver IC Evaluation Board
EVAL_1ED020I12-B2 Application Note
Electrical features
3.4 Active Miller clamping
On this evaluation board the Infineon gate driver 1ED020I12-B2 is supplied with a unipolar voltage
+15V/0V instead of a bipolar supply voltage e.g. +15V/-8V. To avoid a parasitic turn on of the gate by
switching on the opposite IGBT, the feature “Active Miller Clamp” of the 1ED020I12-B2 is used.
During turn-off, the gate voltage is monitored. If the gate voltage goes below 2V related to VEE2, the
clamp output is activated and clamps the gate voltage to VEE2 till an on-command for the gate driver
output occurs.
VGE_bot
VCE_bot
IC
Clamp active
activated
VGE_top
Figure 3-2 the clamping of the bottom side gate at voltages < 2V
3.5 IGBT turn - on / off
The switching characteristic of the IGBTs is defined by the gate resistors RG1B, RG1T, RG2B and
RG2T.
Figure 3-3 bottom side driver output
The gate resistors are adapted to the IGBT module FS25R12W1T4_B11 to get signals with less
oscillation as possible by keeping a fast slope at the output. There is the possibility to adapt the
switching characteristic to specific applications or to different IGBTs by replacing the values of RG1B
Application Note
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EiceDRIVER™ Driver IC Evaluation Board
EVAL_1ED020I12-B2 Application Note
Electrical features
and RG1T. The use of RG2B and RG2T together with DG1B and DG1T makes it possible to change
the on-switching and the off-switching slopes of the IGBT independent to each other.
To avoid a shoot through between top- and bottom IGBT, the operator needs ensure sufficient dead
time. With this setup the dead time should be > 1µs.
VCE_bot
IC
VGE_bot
Figure 3-4 turning on bottom IGBT
VCE_bot
IC
VGE_bot
Figure 3-5 turning off bottom IGBT
Application Note
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EiceDRIVER™ Driver IC Evaluation Board
EVAL_1ED020I12-B2 Application Note
Electrical features
VCE_bot
IC
VGE_bot
VGE_top
Figure 3-6 turning off bottom IGBT and turning on top IGBT with delay of 1.5µs
3.6 DC-Link capacitor
Due to the available space there is only a small DC-Link capacitor of 220nF available. If a bigger DCLink capacity is necessary it has to be connected externally to the connectors V+HV and GND_HV.
3.7 Input PWM-Signals
The PWM input pins of the 1ED020I12-B2 can be configured in non-inverting input logic or inverting
input logic.
 IN+ Non Inverting Driver Input
IN+ control signal for the driver output if IN- is set to low, e.g. the IGBT is on if IN+ = high and
IN- = low
 IN- Inverting Driver Input
IN- control signal for the driver output if IN+ is set to high, e.g. the IGBT is on if IN- = low and
IN+ = high
The EVAL_1ED020I12-B2 is designed in that way, that the non-inverting input is used. There is the
possibility to use also the inverting input logic by replace RIN1T, RIN1B and RP1T and RP1B.
Figure 3-7 bottom side driver input
Application Note
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EiceDRIVER™ Driver IC Evaluation Board
EVAL_1ED020I12-B2 Application Note
Electrical features
There is also the possibility to use low pass filters inside the PWM input signals to avoid a undesired
switch on an IGBT by disturbances. This feature is not used in this evaluation board, but there is the
possibility to test it by changing the resistors RIN1T, RIN1B, RIN2T, RIN2B and the capacitors CIN1T,
CIN1B, CIN2T, CIN2B.
Application Note
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EiceDRIVER™ Driver IC Evaluation Board
EVAL_1ED020I12-B2 Application Note
Schematic and Layout
4 Schematic and Layout
4.1 Schematic
Figure 4-1 HV supply input and DC-Link
Figure 4-2 LV Supply and Reset Input
Figure 4-3 connector X1
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EVAL_1ED020I12-B2 Application Note
Schematic and Layout
Figure 4-4 Infineon driver 1ED020I12-B2 top and bottom
Figure 4-5 IGBT module Infineon FS25R12W1T4_B11
Application Note
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EVAL_1ED020I12-B2 Application Note
Schematic and Layout
Figure 4-6 LEDs, FAULT and READY logic
Application Note
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EiceDRIVER™ Driver IC Evaluation Board
EVAL_1ED020I12-B2 Application Note
Schematic and Layout
4.2 Layout
4.2.1 Creepage distance
The isolation between input and output is ensured by the coreless transformer of the 1ED020I12-B2
IGBT gate driver. The creepage distance ensured by the layout is 8mm between low- and high
voltage supply and 2.4mm inside the high voltage supply area.
4.2.2 Layout top
Figure 4-7 Layout top of the EVAL_1ED020I12-B2
4.2.3 Layout bottom
Figure 4-8 Layout bottom of the EVAL_1ED020I12-B2
Application Note
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EiceDRIVER™ Driver IC Evaluation Board
EVAL_1ED020I12-B2 Application Note
Schematic and Layout
4.2.4 Top place
Figure 4-9 top place view of the EVAL_1ED020I12-B2
Application Note
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EiceDRIVER™ Driver IC Evaluation Board
EVAL_1ED020I12-B2 Application Note
Schematic and Layout
4.3 Bill of material
Part
Value
Package
C1, C4, C5, C6
100nF/10V X7R
SMD0603
C1B, C1T, C3
1uF/10V X7R
SMD0805
C2
100µF / 16V
6.3 x 6.3 x 7.7mm
C2B, C2T
1µF/25V X7R
SMD1206
C3B, C3T
220pF/25V X7R
SMD0603
C_BULK
220nF/1000V
C22.5B10
D1, D2, D2B, D2T, D3B, D3T
BAT165
SOD323F
D1B, D1T
STTH112U
SMB_DO-214AA
DBOOT
D-MURS160T3
SMB_DO-214AA
R1B, R1T
1k
SMD0805
RG1B, RG1T
47R
SMD1206
RIN1B, RIN1T, RP2B, RP2T
0R
SMD0603
RL1
820R
SMD0805
RL2, RL3, RL4, RL5, RL6
270R
SMD0805
RP3B, RP3T, RP4B, RP4T, RP5
10k
1ED020I12-B2_B,
1ED020I121ED020I12-B2
B2_T
TL1, TL3
BCR192
SMD0603
TL2, TL4
BCR142W
SOT323
U$3
FS25R12W1T4_B11 FS25R12W1T4_B11
X1
FAB32Q2
FAB32Q2
+5V, +15V, RESET
22-23-2021
22-23-2021
GND_HV, OUT, V+HV
MKDSN1,5/2-5,08
MKDSN1,5/2-5,08
!FAULT_B, !FAULT_T
LED_RT
CHIPLED_0805
15V, VCC
LED_GN
CHIPLED_0805
READY_B, READY_T
LED_GE
CHIPLED_0805
Application Note
PG-DSO-16-15
SOT23
19
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