Evaluation Board EVAL-2EDL23I06PJ

Eice DR IV ER ™
High voltage gate driver IC
E valu atio n B oar d
Application Note
EV AL -2 E DL2 3I0 6P J
Applic atio n N ote
Rev. 1.0 2014-04-11
Infin eon T echnol ogi es A G
Edition 2014-04-11
Published by Infineon Technologies AG,
81726 Munich, Germany.
© 2014 Infineon Technologies AG
All Rights Reserved.
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EiceDRIVER™ Driver IC Evaluation Board
EVAL-2EDL23I06PJ Application Note
Revision History: 2014-04 Rev.1.0
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Subjects (major changes since last revision)
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of WIND RIVER SYSTEMS, INC. ZETEX™ of Diodes Zetex Limited.
Last Trademarks Update 2011-11-11
Application Note
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EiceDRIVER™ Driver IC Evaluation Board
EVAL-2EDL23I06PJ Application Note
Table of Contents
Table of Contents
Table of Contents .................................................................................................................................................. 4
1
Introduction ....................................................................................................................................... 5
2
2.1
2.2
2.3
Design features ................................................................................................................................. 6
Main features ....................................................................................................................................... 6
Board specifications ............................................................................................................................ 7
Pin assignment .................................................................................................................................... 8
3
3.1
3.2
3.3
3.4
3.5
3.6
3.7
3.8
3.9
Electrical features ............................................................................................................................. 9
Supply voltages +5V and +15V ........................................................................................................... 9
Undervoltage lockout........................................................................................................................... 9
Short circuit detection .......................................................................................................................... 9
Current amplifier ................................................................................................................................ 10
Deadtime and interlock function ........................................................................................................ 10
IGBT turn - on / off ............................................................................................................................. 11
Input PWM-Signals............................................................................................................................ 12
DC-Link capacitor .............................................................................................................................. 12
Connection of inductive load for non repetitive single or multi pulse measurements ....................... 12
4
4.1
4.2
4.2.1
4.2.2
4.2.3
4.3
Board design details ....................................................................................................................... 14
Schematic .......................................................................................................................................... 14
Layout ................................................................................................................................................ 16
Layout top layer ............................................................................................................................ 16
Layout bottom layer...................................................................................................................... 16
Layout top place ........................................................................................................................... 17
Bill of material .................................................................................................................................... 18
Application Note
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EiceDRIVER™ Driver IC Evaluation Board
EVAL-2EDL23I06PJ Application Note
Introduction
1
Introduction
The gate driver evaluation board EVAL-2EDL23I06PJ was developed to show the functionalities and key
features of the Infineon IGBT gate driver 2EDL23I06PJ.
The board is available from Infineon in sampling quantities. The properties of this part are described in the
datasheet chapter of this document, whereas the remaining paragraphs provide information intended to enable
the customer to copy, modify and qualify the design for production, according to their own specific requirements.
The design of the EVAL-2EDL23I06PJ was performed with respect to the environmental conditions described in
this document. The design was tested as described in this document, but not qualified regarding manufacturing,
lifetime or over the full ambient operating conditions.
The boards provided by Infineon are subjected to functional testing only.
Due to their purpose Evaluation Boards are not subjected to the same procedures regarding Returned Material
Analysis (RMA), Process Change Notification (PCN) and Product Discontinuation (PD) as regular products.
These Evaluation Boards are used for development support only and should not be used as reference design
for volume production.
See Legal Disclaimer and Warnings for further restrictions on Infineon´s warranty and liability.
Application Note
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EVAL-2EDL23I06PJ Application Note
Design features
2
Design features
2.1
Main features
Figure 1
Top view of the EVAL-2EDL23I06PJ
The EVAL-2EDL23I06PJ contains an Infineon IGBT gate half bridge driver 2EDL23I06PJ and two Infineon
IGBTs IKP20N60H3.
The evaluation board provides the following main features

Short circuit protection by shunt measurement incl. status LED (/FAULT) and latch

Current measurement with operational amplifier

Under voltage lock out

Bootstrap functionality for high side IGBT by using the internal ultra-fast bootstrap diode of the 2EDL23I06PJ

Deadtime and interlock function integrated in the IGBT gate driver.

Connector for 15V supply, Reset, High voltage supply, external load

Internal voltage regulator for 5V supply

Status LED for 15V supply, /FAULT state

DC link capacitor
Application Note
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EVAL-2EDL23I06PJ Application Note
Design features
Status LED Ready and /FAULT
IGBT half bridge gate driver
with integrated bootstrap diode
HV-supply input GND
External load
HV-supply input V+HV
DC-link
IGBTs
Reset and Shut down
15V supply input with status LED
Figure 2
Overview functionalities on top-side
2.2
Board specifications
5V voltage regulator
Current amplifier
Shunt
All values are specified at an ambient temperature of TA = 25°C
Table 1
Board specifications
Parameter
Description
Typ.
min
max
Unit
VDD
15V voltage supply
15
13.2
17.5
V
VDC
High voltage supply
320
-
450
V
IOut,pk
Single pulse peak output current
-
-
20
A
IOut,rms
RMS output current
-
-
4
A
fp
Switching frequency
40
-
100
kHz
Application Note
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EVAL-2EDL23I06PJ Application Note
Design features
2.3
Pin assignment
Table 2
Pin assignment
Connector name
RESET
+15V (VDD)
X1
Pin no.
Pin name
Description
Left terminal
/RST
same as X1-B1
Middle terminal
GND
same as X1-A16
Right terminal
OFF
same as X1-B2
Right terminal
+15V
positive 15V supply
Left terminal
GND
A16
GND
reference for 15V supply and input signals
B1
/RST
input – 0V to reset circuit
B2
/FLT
output over current; OC, 0..15V
B7
IN_T
non-inverting input top IGBT; 0V off; 5V on
B8
IN_B
non-inverting input bottom IGBT; 0V off; 5V on
B16
+5V
positive 5V supply generated from 15V
*see Figure 21 for connector pin numbering
GND
reference for high voltage supply (Power-GND,
internally connected to GND)
V+HV
positive high voltage supply (up to 400V related to
GND_HV)
Load
Output HV half bridge (related to GND_HV) for
connecting a test load
Application Note
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EVAL-2EDL23I06PJ Application Note
Electrical features
3
Electrical features
3.1
Supply voltages +5V and +15V
The supply voltage for the driver output (+15V VDD) has to be supplied externally over the dedicated connector.
The digital 5V supply voltage is generated internally by an Infineon voltage regulator. The evaluation board does
not provide an overvoltage supply monitoring. The user has to ensure therefore that the voltages are in the
correct range. Voltages above the maximum values will lead to damages of the IGBT drivers. The availability of
the supply voltage +15V is visible over the green status LED.
The high-side gate driver is supplied over the internally ultra-fast bootstrap diode of the 2EDL23I06PJ. To
ensure that the bootstrap capacitor is charged before the high side IGBT is switched on, the low side IGBT has
to be switched on for a dedicated time of several milliseconds.
3.2
Undervoltage lockout
The +15V supply VDD is monitored by the 2EDL23I06PJ. In case of an undervoltage the driver output is
switched off. The thresholds for the low side are typically VCCUV+ = 12.5 V (positive going) and VCCUV– = 11.6 V
(negative going). The thresholds for the high side are typically VBSUV+ = 11.6 V (positive going) and VBSUV– =
10.7 V (negative going). The undervoltage lockout state of the input section is indicated by the /FAULT LED.
3.3
Short circuit detection
The 2EDL23I06PJ provides integrated short circuit detection by measuring the voltage drop over a 20mΩ shunt.
If the current reaches a value of typ. 22.7A a short circuit is detected, and the gate driver outputs are switched
off. This status is reported by the /FAULT LED. The /FAULT event is latched by the flip-flop according to Figure 3
and must be reset by activating the reset contactor.
Figure 3
Shunt interface to Opamp and flip-flop latch circuit
Figure 4 shows the signals of the bottom side driver and IGBT during an overcurrent condition. The delay
between over current event and output switch off is about 2.2 µs. The FAULT status is latched by an internal
logic and must be reset by switching the RESET signal to ground.
Application Note
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EVAL-2EDL23I06PJ Application Note
Electrical features
CH1  VCE_bot 100V/div
CH2  IC_bot 5A/div
CH3  VLS_input 2V/div
CH4  VShunt 200mV/div
Time 1s/div
Figure 4
Overcurrent detection signals
3.4
Current amplifier
The EVAL-2EDL23I06PJ provides an operational amplifier which amplifies the voltage drop over the shunt with
a gain of 10. The amplified voltage is available for the user at connector X1 pins A9 and B9. The amplified
voltage is calculated by the following equation: V = Ishunt x Rshunt x 10. Due to inherent component tolerances, the
amplifier output should be calibrated in case of using it for a critical current control.
Figure 5
Current amplifier
CH1  VCE_bot 100V/div
CH2  IC_bot 4A/div
CH3  VGE_bot 5V/div
CH4  VCurrent_amplifier 1V/div
Time 4s/div
Figure 6
Current amplifier output with collector current
3.5
Deadtime and interlock function
The IC provides a hardware fixed deadtime of typ 380ns. An additional interlock function prevents the two
outputs from being activated simultaneously. Hardware deadtime does not block shoot-through. It is a basic item
to avoid deep shoot through. The general recommendation for dead time is to be approx. 1µs.
Application Note
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EVAL-2EDL23I06PJ Application Note
Electrical features
3.6
IGBT turn - on / off
Figure 7
2EDL23I06PJ gate circuit
The switching characteristic of the IGBTs is defined by the gate resistors RG1B, RG1T, RG2B and RG2T
according to Figure 7. The resistor values are selected in order to avoid parasitic dv/dt-triggered turn-on. There
is the possibility to adapt the switching characteristic to specific applications or to different IGBTs by replacing
the values of RG1B and RG1T. The use of RG2B and RG2T together with DG1B and DG1T makes it possible to
change the on-switching and the off-switching slopes of the IGBT independent to each other. Please make sure
to select an appropriate Schottky diode with sufficient pulse current capability.
The internal deadtime generation of typ. 380ns of the 2EDL23I06PJ ensures that there will be no shoot through
between top - and bottom – IGBT. If necessary, a higher deadtime can be generated by the input signals LIN
and HIN.
Figure 8 and Figure 9 show typical switching transients for the high side and the low side IGBT.
CH1  VCE_bot 100V/div
CH2  IC_bot 4A/div
CH3  VGE_bot 5V/div
CH4  VLS_input 1V/div
CH1  VCE_bot 100V/div
CH2  IC_bot 4A/div
CH3  VGE_bot 5V/div
CH4  VLS_input 1V/div
Time 200ns/div
Time 200ns/div
a)
Figure 8
b)
Switching transient of low side IGBT; a) turn-off, b) turn-on
Application Note
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EVAL-2EDL23I06PJ Application Note
Electrical features
CH1  VCE_top 100V/div
CH2  IC_top 4A/div
CH4  VHS_input 1V/div
CH1  VCE_top 100V/div
CH2  IC_top 4A/div
CH4  VHS_input 1V/div
Time 200ns/div
Time 200ns/div
a)
b)
Figure 9
Switching transient of high side IGBT; a) turn-off, b) turn-on
3.7
Input PWM-Signals
There is the possibility to use low pass filters inside the PWM input signals to avoid an undesired turn-on of the
IGBT by disturbances. This feature is not used in this evaluation board, but there is the possibility to test it by
changing the resistors RIN1T, RIN1B and the capacitors CIN1T, CIN1B. Only the resistors RIN1T and RIN1B
are therefore assembled according to Figure 10.
3.8
DC-Link capacitor
Due to the available space there is only a small DC-Link capacitor of 100nF available according to Figure 12. A
bigger DC-Link capacitance has to be connected externally to the connectors V+HV and GND_HV to cancel
wiring inductances between voltage source and test board.
Figure 10
2EDL23I06PJ gate driver input
3.9
Connection of inductive load for non repetitive single or multi pulse
measurements
The test board can be used for non-repetitive single or multi pulse measurements. Such kind of measurements
help to characterize the switching performance of the used IGBT. Error! Reference source not found. shows,
how the inductive load must be connected for measuring the high side IGBT in order to keep the overcurrent
protection capability.
Application Note
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Electrical features
LLoad
Figure 11
Connection of inductive load
Application Note
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Board design details
4
Board design details
4.1
Schematic
Figure 12
HV supply input and DC-Link
Figure 13
LV Supply and Reset Input
Figure 14
Connector X1
Figure 15
Infineon driver 2EDL23I06PJ with shunt measurement
Application Note
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Board design details
Figure 16
5V voltage regulator
Figure 17
Current amplifier and overcurrent comparator
Figure 18
LEDs, FAULT and over current logic
Application Note
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Board design details
4.2
Layout
4.2.1
Layout top layer
Figure 19
Layout top of the EVAL-2EDL23I06PJ
4.2.2
Layout bottom layer
Figure 20
Layout bottom of the EVAL-2EDL23I06PJ
Application Note
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Board design details
4.2.3
Layout top place
Figure 21
Top place view of the EVAL-2EDL23I06PJ
Application Note
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Board design details
4.3
Bill of material
Part
Value
Package
C_BULK
330nF, 450V
C-EU150-064X183
C1
4u7F/25V
C-EUC1206K
C10, C14
100pF
C-0603
C12
100nF
C-0603
C2
EEEFK1C101P 100µF/16V
SMD-C6.3x7.7
C2T
4µ7F/25V
C-1206
C3
1uF/10V
C-0805
C4, C11
100nF/10V
C-0603
C7
4u7F/25V
C-1206
C9
4u7F/10V
C-1206
IC2
LMV721M5
IC-OP-TSV991AILT
IC5
IC-REG-TLE4264G
SOT223
Q1, Q2
IKP20N60H3
TO220
R1, R2
4k7
R-0603
R3, R17, R18, RIN1B, RIN1T
1k
R-0603
R4, R5, R6, R7, R8, R9, R12
47k
R-0603
RG1B, RG1T
10R
R-EU_R1206
RL1
820R
R-0805
RL3, RL4
22k
R-0805
RL5, RL6
10k
R-0805
RS
0R02/5W
2012
T4, T5, T6, T7
T-NPN-BC848A
T-NPN-BC848A
U$3
2EDL23I06PJ
2EDL_SO14-2_3A
X1
FAB32Q2
FAB32Q2
X2
MKDSN1,5/3-5,08
MKDSN1,5/3-5,08
X3
22-23-2031
22-23-2031
+15V
22-23-2021
22-23-2021
/FAULT
LED_RT
LEDCHIPLED_0805
15V
LED_GN
LEDCHIPLED_0805
READY
LED_GE
LEDCHIPLED_0805
Application Note
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Published by Infineon Technologies AG