DN6849 4.5±0.3 4.0±0.3 Hall IC (Operating Temperature Range Topr = – 40 to +100˚C, Operating in Alternative ■ Overview • • • • 0.43 – 0.05 1 2 3 1 : VCC 2 : GND 3 : Output 5˚ 5˚ 2˚ 2˚ SSIP003-P-0000A (E-3S) DN6849SE Unit : mm 0.55±0.15 0.4±0.1 4.52±0.3 (1.0) 4.52±0.3 (1.0) perature compensator Wide operating supply voltage range (VCC=4.5 to 16V) Operating in alternative magnetic field TTL and MOS ICs directly drivable by output Output open collector + 0.1 0.5±0.1 1.27 ■ Features • High sensitivity and low drift • Stable temperature characteristics due to the additional tem- 0.8±0.1 45˚ 12.5±06.5 The DN6849/SE/TE/S is a combination of a Hall element, amplifier, Schmitt circuit, and stabilized power supply/temperature compensator integrated on an identical chip by using the IC technology. It amplifies Hall element output at the amplifier, converts into a digital signal through the Schmitt circuit, and drives the TTL or MOS IC directly. (0.72) (0.4) 1.27 2 to 5˚ 1.54±0.1 1 2 3 ■ Applications • Speed sensors • Position sensors • Rotation sensors • Keyboard switches • Microswitches 1 : VCC 2 : GND 3 : Output 2˚ R0.25 SSIP003-P-0000 (SE-3S) Unit : mm (0.6) DN6849TE (1.0) 10.0±0.6 (1.0) Note) This IC is not suitable for car electrical equipments. 0.6±0.15 · DN6849/SE/TE 1.27 Stabilized power supply temperature correction circuit 1 VCC 3 Output 2 GND (0.7) 3.3±0.3 4.0±0.3 ■ Block Diagram Unit : mm 5˚ 10.5±0.5 Magnetic Field) 2.0±0.3 0.7 1.0 2˚ DN6849/SE/TE/S 0.5±0.1 1.2±0.1 (0.2) 1 2 3 1 : VCC 2 : GND 3 : Output SSIP003-P-0000B (TE-3S) Unit : mm 2 3 NC 2 or GND Stabilized power supply temperature correction circuit 1 VCC 3 Output 0.3 to 0.5 3.0±0.3 5.4±0.4 4 Hall element Amp. GND Schmitt trigger Output stage ESOP004-P-0200 (SOH-4D) 0.4±0.2 · DN6849S 1.5±0.3 0.95±0.2 Schmitt trigger Output stage 1.6 4 0.15 0 to 0.1 Amp. 0.6±0.2 Hall element 1 3.0±0.3 DN6849S 1 : VCC 2 : NC or GND 3 : Output 4 : GND ■ Absolute Maximum Ratings (Ta=25˚C) Parameter Symbol Rating Unit Supply voltage VCC 18 V Supply current ICC 8 mA Circuit current IO 20 mA Power dissipation PD 150 mW Opearting ambient temperature Topr –40 to+100 ˚C Storage temperature Tstg –55 to+125 ˚C ■ Electrical Characteristics (Ta=25˚C) Parameter Symbol Operating flux density Condition B1 (L to H) VCC=12V B2 (H to L) VCC=12V Hysteresis width BW Low output voltage VOL High output current IOH Supply current ICC min typ –17.5 max –6 6 VCC=12V VCC=4.5 to 16V, IO=12mA, B=17.5mT VCC=4.5 to 16V, VO=16V, B=–17.5mT 7 Unit mT 17.5 10 mT mT 0.4 V 10 µA VCC=16V 6 mA VCC=4.5V 5.5 mA ■ Hall Element Position · DN6849SE · DN6849S 1.0 1.5 1. 1.15 1.5 1.0 1.25 1.0 1.3 1.0 0 Unit : mm The center of the Hall element is in the hatched area in the right figure. · DN6849TE 1.0 1.63 1. 1.0 1.75 0 · DN6849 1.5 Distance from package surface to sensor DN6849 DN6849SE DN6849TE DN6849S 0.7 0.42 0.4 0.65 Marking surface Applied flux direction Output voltage (VO) ■ Flux-Voltage Conversion Characteristics B1 B2 Flux density (B) ■ Precaution on Use 1. Change of the operation magnetic flux density does not depend on the supply voltage, because the stabilization power supply is built-in. (only for the range ; VCC= 4.5 to 16V) 2. Change from “H” to “L” level increases the supply current by approx. 1mA. ■ Characteristics Curve Supply voltage – Ambient temperature Operating flux density – Ambient temperature Operating flux density – Supply voltage 8 VCC = 12V VCC = 16V 5 4 VCC = 4.5V 3 2 1 –50 –25 0 25 50 75 100 125 Output low level voltage – Ambient temperature 100 Output “L” level voltage (mV) 0 to L Sample 1, BH Sample 2, BH to L Samp le 3, BH to L Sample 1, –10 BL to H Sample 2, BL to H Sample 3, B L to H –20 Ambient temperature (˚C) 90 10 20 Operating flux density (mT) Operating flux density (mT) Supply current (mA) 6 0 Ta = 25˚C 20 7 VCC = 12V IO = 12mA 80 70 60 50 40 30 20 10 0 –50 –25 0 25 50 75 100 125 Ambient temperature (˚C) BH to L 10 0 BL to H –10 –20 –50 –25 0 25 50 75 100 125 Ambient temperature (˚C) 0 2 4 6 8 10 12 14 16 18 20 Supply voltage (V)