MIP501, MIP502 Intelligent Power Devices (IPDs) MIP501, MIP502 Silicon MOS IC MIP501 (V DSS > 40V Ron < 0.5Ω) ● Over-current-protection function built-in ● Reset function built-in 4.5±0.2 Unit : mm 90° 0.65±0.1 0.85±0.1 1.0±0.1 0.8C 0.8C 0.65±0.1 Direct drive possible by the logic circuit 0.7±0.1 16.0±1.0 ● 7.5±0.2 3.8±0.2 High breakdown voltage, N-Ch MOS FET output 10.8±0.2 ● 2.5±0.1 ■ Features ■ Applications ● Lamp drive 0.4±0.1 0.5±0.1 2.5±0.2 2.05±0.2 2.5±0.2 0.8C Rating VDSS 40 V Output peak current IOP 5 A Output current IOA 1.7 A Input voltage VIN – 0.5 to 6 Input current IIN ±10 MIP501 1.5 PD MIP502 1* MIP502 5.0±0.2 4.0±0.2 V mA 0.7±0.1 W Junction temperature Tj 150 ˚C Storage temperature Tstg – 55 to +150 ˚C Operating temperature Topr – 40 to + 85 ˚C +0.15 0.45 -0.1 1.27 1.27 * The value at mounted on PCB (glass epoxy resin: 100 ×100mm). (For MIP502 only) 1 2 3 2.54±0.15 ■ Block Diagram 2 DRAIN Over voltage protection circuit 3 IN Reset circuit 1 SOURCE Unit : mm 13.5±0.5 Allowable power dissipation Unit 3 0.7±0.2 Symbol Output breakdown voltage 2 Over current protection circuit 2.3±0.2 Parameter 1 8.0±0.2 ■ Absolute Maximum Ratings (Ta= 25˚C) 1 : IN 2 : Drain 3 : Source MT3 Type Package +0.15 0.45 -0.1 1 : Source 2 : Drain 3 : IN TO-92NL Type Package MIP501, MIP502 Intelligent Power Devices (IPDs) ■ Pin Descriptions No.1 pin : GND pin. Connect to the GND pin. (Source) No.2 pin : Output pin. Connect to the load. The current flowing into this terminal is limited at about 5A. When this terminal voltage exceeds about 4.6V, the output MOS FET is turned OFF. (Drain) No.3 pin : Input pin. The signal from the logic is inputted to drive the device. When this is open, the output MOS FET turns OFF. ■ Electrical Characteristics (Ta= 25˚C) Parameter Condition Symbol Min Typ Max Unit 0.5 Ω 0.75 V Drain-Source ON-resistance RDS (ON) VIN = 5V, IO=1.5A Drain voltage VDS (ON) VIN = 5V, IO=1.5A Drain breakdown voltage VDSS IDSS = 3mA Drain leakage current (1) IDSS (1) VDSS = 40V 3.0 mA Drain leakage current (2) IDSS (2) VDSS = 25V 1.5 mA 6.0 V 0.8 V Input voltage VIN (H) 40 4.5 V 5.0 VIN (L) Over-current protection IOCP VIN = 5V 5.0 A Reset voltage VRESET VIN = 5V 4.6 V Input current IIN (opr) VIN = 5V, VDS =1V 1.0 mA MIP501, MIP502 Intelligent Power Devices (IPDs) VDSS – Ta SS IDSS – Ta SS 5 80 Output leakage current IDSS (mA) Output breakdown voltage VDSS (V) 100 MIP502 60 MIP501 40 20 0 -50 0 50 Ambient temperature Ta (˚C) 4 3 2 1 0 -50 100 0 50 Ambient temperature Ta (˚C) IIN –VIN 10 100 8 6 VDS=3V 4 VDS=2V 2 0 -50 0 50 Ambient temperature Ta (˚C) 100 Input current IIN (µA) Detected value at over current Is (˚C) Is – Ta 100 50 0 4 5 Input voltage VIN (V) Ron – Ta 6 PD – Ta 2.0 1.8 Allowable drain loss PD (W) ON-resistance Ron (Ω) 0.6 0.4 0.2 0 -50 0 50 Ambient temperature Ta (˚C) 100 1.6 1.4 1.2 1.0 MIP501 0.8 0.6 MIP502 0.4 0.2 0 0 IINN – Ta 100 Input current IIN (µA) 80 60 40 20 0 -50 0 50 Ambient temperature Ta (˚C) 40 80 120 160 Ambient temperature Ta (˚C) 100