AON7458 250V,5A N-Channel MOSFET General Description Product Summary The AON7458 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability this device can be adopted quickly into new and existing offline power supply designs.This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. VDS 300V@150℃ ID (at VGS=10V) 5A RDS(ON) (at VGS=10V) < 0.56Ω 100% UIS Tested! 100% Rg Tested! Top View DFN 3x3A_EP Bottom View Pin 1 S S D D S G D D Gate-Source Voltage VGS TC=25°C C ±30 V A 16 1.5 IDSM TA=70°C Units V 3.2 IDM TA=25°C Continuous Drain Current Avalanche Current C Maximum 250 5 ID TC=100°C Pulsed Drain Current G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Continuous Drain CurrentB D Top View A 1.2 IAR 2.1 A Repetitive avalanche energy C EAR 66 mJ Single pulsed avalanche energy G Peak diode recovery dv/dt TC=25°C EAS dv/dt 132 5 33 mJ V/ns W 13 W Power Dissipation B PD TC=100°C TA=25°C Power Dissipation A PDSM TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case Rev0: Apr 2011 3.1 TJ, TSTG Symbol t ≤ 10s Steady-State Steady-State RθJA RθJC www.aosmd.com W 2 -50 to 150 Typ 30 60 3.1 °C Max 40 75 3.7 Units °C/W °C/W °C/W Page 1 of 6 AON7458 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min ID=250µA, VGS=0V, TJ=25°C 250 Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage BVDSS /∆TJ Zero Gate Voltage Drain Current IDSS Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS=±30V Gate Threshold Voltage VDS=5V, ID=250µA VGS(th) ID=250µA, VGS=0V, TJ=150°C 300 V ID=250µA, VGS=0V 0.25 V/ oC VDS=250V, VGS=0V 1 VDS=200V, TJ=125°C 10 µA ±100 3.1 3.7 4.3 nΑ V 0.56 Ω 1 V RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=1.5A 0.46 gFS Forward Transconductance VDS=40V, ID=1.5A 5 VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current 5 A ISM Maximum Body-Diode Pulsed Current 16 A DYNAMIC PARAMETERS Input Capacitance Ciss Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=25V, f=1MHz S 0.77 240 306 370 pF 34 51 68 pF 3.2 VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg Total Gate Charge pF 1.7 3.4 5.1 Ω 4.8 6.0 7.2 nC VGS=10V, VDS=200V, ID=1.5A Qgs Gate Source Charge 2.0 nC Qgd Gate Drain Charge 1.5 nC tD(on) Turn-On DelayTime 14 ns tr Turn-On Rise Time 12 ns tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time IF=1.5A,dI/dt=100A/µs,VDS=100V 52 77 102 Qrr Body Diode Reverse Recovery Charge IF=1.5A,dI/dt=100A/µs,VDS=100V 0.2 0.29 0.40 Body Diode Reverse Recovery Time VGS=10V, VDS=125V, ID=1.5A, RG=25Ω 23 ns 12 ns ns µC A. The value of RθJA is measured with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power Dissipation PDSM is based on RθJA t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. G.These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. H. L=60mH, IAS=2.1A, VDD=150V, RG=10Ω, Starting TJ=25°C. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev0: Apr 2011 www.aosmd.com Page 2 of 6 AON7458 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 10 VDS=40V 10V 6.5V 8 -55°C 10 6 ID(A) ID (A) 6.0V 125°C 4 1 5.5V 25°C 2 VGS=5.0V 0.1 0 5 10 15 20 VDS (Volts) Fig 1: On-Region Characteristics 2 25 1.5 3 1.2 2.5 Normalized On-Resistance RDS(ON) (Ω Ω) 0 VGS=10V 0.9 0.6 0.3 4 6 8 VGS(Volts) Figure 2: Transfer Characteristics 10 VGS=10V ID=1.5A 2 1.5 1 0.5 0.0 0 0 2 4 6 8 10 -100 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage -50 0 50 100 150 200 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+01 1.2 40 125°C 1.0E-01 25°C IS (A) BVDSS (Normalized) 1.0E+00 1.1 1 1.0E-02 0.9 1.0E-03 0.8 1.0E-04 -100 50 100 150 200 TJ (oC) Figure 5: Break Down vs. Junction Temperature Rev 0: Mar 2011 -50 0 www.aosmd.com 0.2 0.4 0.6 0.8 VSD (Volts) Figure 6: Body-Diode Characteristics 1.0 Page 3 of 6 AON7458 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1000 15 VDS=240V ID=1.5A Ciss 100 Capacitance (pF) VGS (Volts) 12 9 6 Coss 10 Crss 1 3 0 0 0 2 4 6 8 Qg (nC) Figure 7: Gate-Charge Characteristics 0.1 10 100 10 VDS (Volts) Figure 8: Capacitance Characteristics 100 400 100µs 1ms 1 10ms DC TJ(Max)=150°C TC=25°C 300 10µs RDS(ON) limited Power (W) 10 ID (Amps) 1 200 0.1s 0.1 100 TJ(Max)=150°C 0.01 0 1 10 100 1000 0.0001 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) Zθ JC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=3.7°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Single Pulse Ton T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev 0: Mar 2011 www.aosmd.com Page 4 of 6 AON7458 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 6.0 5.0 30 Current rating ID(A) Power Dissipation (W) 40 20 10 4.0 3.0 2.0 1.0 0 0.0 0 25 50 75 100 125 150 0 TCASE (°°C) Figure 12: Power De-rating (Note B) 25 50 75 100 125 TCASE (°°C) Figure 13: Current De-rating (Note B) 150 100 TJ(Max)=150°C TA=25°C Power (W) 80 60 40 20 0 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note G) 100 1000 Zθ JA Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=75°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD 0.01 Ton Single Pulse T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 15: Normalized Maximum Transient Thermal Impedance (Note G) Rev0: Apr 2011 www.aosmd.com Page 5 of 6 AON7458 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + VDC - VDC DUT Qgs Vds Qgd - Vgs Ig Charge Res istive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs + VDC 90% Vdd - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf t off Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L EAR= 1/2 LI Vds 2 AR BVDSS Vds Id + Vgs Vgs VDC - Rg Vdd I AR Id DUT Vgs Vgs Diode Recovery Tes t Circuit & Waveforms Qrr = - Idt Vds + DUT Vgs Vds - Isd Vgs Ig Rev0: Apr 2011 L Isd + Vdd trr dI/dt IRM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6