SHENZHENFREESCALE AON6458

AON6458
250V,14A N-Channel MOSFET
General Description
The AON6458 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of
performance and robustness in popular AC-DC applications.By providing low R DS(on) , C iss and Crss along with
guaranteed avalanche capability this device can be adopted quickly into new and existing offline power supply
designs.This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial
power supplies and LED backlighting.
Features
VDS
300V@150℃
ID (at VGS=10V)
14A
RDS(ON) (at VGS=10V)
< 0.17Ω
g
Top View
D
1
8
2
7
3
6
4
5
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC=25°C
Continuous Drain
CurrentB
Pulsed Drain Current
Avalanche Current
C
A
2.2
A
1.7
IAR
4.5
A
Repetitive avalanche energy C
EAR
304
mJ
Single pulsed avalanche energy H
Peak diode recovery dv/dt
TC=25°C
EAS
dv/dt
608
5
83
mJ
V/ns
W
33
W
Power Dissipation B
PD
TC=100°C
TA=25°C
Power Dissipation A
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
2
PDSM
TA=70°C
Junction and Storage Temperature Range
1/6
V
42
IDSM
TA=70°C
±30
8.8
IDM
TA=25°C
Continuous Drain
Current
Units
V
14
ID
TC=100°C
C
Maximum
250
TJ, TSTG
Symbol
t ≤ 10s
Steady-State
Steady-State
RθJA
RθJC
W
1.25
-50 to 150
Typ
24
53
1
°C
Max
30
64
1.5
Units
°C/W
°C/W
°C/W
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AON6458
250V,14A N-Channel MOSFET
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
ID=250µA, VGS=0V, TJ=25°C
250
Typ
Max
Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
BVDSS
/∆TJ
Zero Gate Voltage Drain Current
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
VDS=0V, VGS=±30V
Gate Threshold Voltage
VDS=5V, ID=250µA
VGS(th)
ID=250µA, VGS=0V, TJ=150°C
300
V
ID=250µA, VGS=0V
0.25
V/ oC
VDS=250V, VGS=0V
1
VDS=200V, TJ=125°C
10
±100
3.2
µA
3.8
4.5
nΑ
V
0.17
Ω
1
V
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=10A
0.14
gFS
Forward Transconductance
VDS=40V, ID=10A
16
VSD
Diode Forward Voltage
IS=1A,VGS=0V
S
0.72
IS
Maximum Body-Diode Continuous Current
14
A
ISM
Maximum Body-Diode Pulsed Current
42
A
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=25V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg
Total Gate Charge
810
1028
1240
pF
110
167
225
pF
5
11
17
pF
1.9
3.9
5.9
Ω
17
22
27
nC
VGS=10V, VDS=200V, ID=10A
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
IF=10A,dI/dt=100A/µs,VDS=100V
125
158
190
Qrr
Body Diode Reverse Recovery Charge IF=10A,dI/dt=100A/µs,VDS=100V
0.8
1
1.2
Body Diode Reverse Recovery Time
VGS=10V, VDS=125V, ID=10A,
RG=25Ω
6.3
nC
8
nC
28
ns
57
ns
65
ns
40
ns
ns
µC
A. The value of RθJA is measured with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power Dissipation PDSM is based on RθJA t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given
application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial
TJ =25°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G.These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
H. L=60mH, IAS=4.5A, VDD=150V, RG=25Ω, Starting TJ=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
2/6
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AON6458
250V,14A N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
100
-55°C
VDS=40V
10V
25
125°C
10
6.5V
ID(A)
ID (A)
20
15
6.0V
10
1
25°C
5
VGS=5.5V
0
0.1
0
5
10
15
20
25
VDS (Volts)
Figure 1: On-Region Characteristics
30
2
0.30
6
8
VGS(Volts)
Figure 2: Transfer Characteristics
10
3
VGS=10V
Normalized On-Resistance
0.25
0.20
RDS(ON) (Ω
Ω)
4
0.15
0.10
0.05
0.00
2.5
VGS=10V
ID=10A
2
1.5
1
0.5
0
0
5
10
15
20
25
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
-100
-50
0
50
100
150
200
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
1.0E+02
1.2
40
125°C
1.0E+00
IS (A)
BVDSS (Normalized)
1.0E+01
1.1
1
25°C
1.0E-01
1.0E-02
0.9
1.0E-03
1.0E-04
0.8
-100
50
100
150
200
TJ (oC)
Figure 5: Break Down vs. Junction Temperature
3/6
-50
0
0.2
0.4
0.6
0.8
VSD (Volts)
Figure 6: Body-Diode Characteristics
1.0
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AON6458
250V,14A N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15
10000
VDS=200V
ID=10A
Ciss
1000
Capacitance (pF)
VGS (Volts)
12
9
6
100
10
3
Crss
0
1
0
5
10
15
20
25
30
Qg (nC)
Figure 7: Gate-Charge Characteristics
35
0.1
100
1
10
VDS (Volts)
Figure 8: Capacitance Characteristics
100
400
TJ(Max)=150°C
TC=25°C
10µs
10
Power (W)
300
100µs
ID (Amps)
Coss
RDS(ON)
limited
1
1ms
DC
10ms
0.1s
0.1
200
100
TJ(Max)=150°C
TC=25°C
0.01
0
1
10
100
1000
0.0001
VDS (Volts)
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Zθ JC Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
PD
0.01
Single Pulse
Ton
T
0.001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
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AON6458
250V,14A N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
80
12
Current rating ID(A)
15
Power Dissipation (W)
100
60
40
20
9
6
3
0
0
0
25
50
75
100
125
150
0
25
75
100
125
TCASE (°°C)
Figure 13: Current De-rating (Note B)
TCASE (°°C)
Figure 12: Power De-rating (Note B)
50
150
300
TJ(Max)=150°C
TA=25°C
250
Power (W)
200
150
100
50
0
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note G)
Zθ JA Normalized Transient
Thermal Resistance
10
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=64°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PD
0.01
Single Pulse
Ton
T
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note G)
5/6
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AON6458
250V,14A N-Channel MOSFET
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+
VDC
-
VDC
DUT
Qgs
Vds
Qgd
-
Vgs
Ig
Charge
Res istive Switching Test Circuit & Waveforms
RL
Vds
Vds
DUT
Vgs
+
VDC
90%
Vdd
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
t off
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
EAR= 1/2 LI
Vds
2
AR
BVDSS
Vds
Id
+
Vgs
Vgs
VDC
-
Rg
Vdd
I AR
Id
DUT
Vgs
Vgs
Diode Recovery Tes t Circuit & Waveforms
Qrr = - Idt
Vds +
DUT
Vgs
Vds -
Isd
Vgs
Ig
6/6
L
Isd
+ Vdd
trr
dI/dt
IRM
Vdd
VDC
-
IF
Vds
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