AON7462 300V,2.5A N-Channel MOSFET General Description The AON7462 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on) , C iss and C rss along with guaranteed avalanche capability this device can be adopted quickly into new and existing offline power supply designs.This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. Features VDS 350V@150℃ ID (at VGS=10V) 2.5A RDS(ON) (at VGS=10V) < 1.5Ω D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage TC=25°C Continuous Drain CurrentB Pulsed Drain Current Avalanche Current C A 0.9 A 0.7 IAR 1.4 A Repetitive avalanche energy C EAR 29 mJ Single pulsed avalanche energy G Peak diode recovery dv/dt TC=25°C Power Dissipation B TC=100°C EAS dv/dt 58 5 25 mJ V/ns W 10 W PD TA=25°C Power Dissipation A Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case 3.1 PDSM TA=70°C Junction and Storage Temperature Range 1/6 V 7.2 IDSM TA=70°C ±30 1.6 IDM TA=25°C Continuous Drain Current Units V 2.5 ID TC=100°C C Maximum 300 TJ, TSTG Symbol t ≤ 10s Steady-State Steady-State RθJA RθJC W 2 -50 to 150 Typ 30 60 4.2 °C Max 40 75 5 Units °C/W °C/W °C/W www.freescale.net.cn AON7462 300V,2.5A N-Channel MOSFET Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol Conditions Min ID=250µA, VGS=0V, TJ=25°C 300 Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage BVDSS /∆TJ Zero Gate Voltage Drain Current IDSS Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS=±30V VGS(th) RDS(ON) Gate Threshold Voltage VDS=5V ID=250µA Static Drain-Source On-Resistance gFS Forward Transconductance VSD Diode Forward Voltage IS Maximum Body-Diode Continuous Current Maximum Body-Diode Pulsed Current ISM ID=250µA, VGS=0V, TJ=150°C 350 V ID=250µA, VGS=0V 0.3 V/ C VDS=300V, VGS=0V 1 VDS=240V, TJ=125°C 10 Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge ±100 µA 4.2 4.5 nΑ V VGS=10V, ID=0.9A 1.2 1.5 Ω VDS=40V, ID=0.9A 1.5 IS=1A,VGS=0V 0.8 1 V 2.5 A 9 A DYNAMIC PARAMETERS Ciss Input Capacitance Coss o VGS=0V, VDS=25V, f=1MHz 3.5 S 155 197 240 pF 20 30 40 pF 2 VGS=0V, VDS=0V, f=1MHz pF 1.9 3.8 5.7 Ω 3.5 4.6 5.6 nC VGS=10V, VDS=240V, ID=0.9A 1.3 nC Qgd Gate Drain Charge 1.5 nC tD(on) Turn-On DelayTime 17 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time VGS=10V, VDS=150V, ID=0.9A, RG=25Ω 8 ns 26 ns 13 IF=0.9A,dI/dt=100A/µs,VDS=100V trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge IF=0.9A,dI/dt=100A/µs,VDS=100V ns 62 95 125 0.14 0.22 0.3 ns µC 2 A. The value of RθJA is measured with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power Dissipation PDSM is based on RθJA t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation P D is based on T J(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX)=150°C. The SOA curve provides a single pulse rating. G.These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. H. L=60mH, IAS=1.4A, VDD=150V, RG=10Ω, Starting T J=25°C THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 2/6 www.freescale.net.cn AON7462 300V,2.5A N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 10 -55°C VDS=40V 10V 125°C 6.5V 3 ID(A) ID (A) 4 2 6.0V 1 VGS=5.5V 1 25°C 0 0.1 0 5 10 15 20 VDS (Volts) Figure 1: On-Region Characteristics 25 2 6 8 VGS(Volts) Figure 2: Transfer Characteristics 10 3 Normalized On-Resistance 5.0 4.0 RDS(ON) (Ω) 4 VGS=10V 3.0 2.0 2.5 VGS=10V ID=0.9A 2 1.5 1 0.5 1.0 0 2 4 6 0 -100 8 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 50 100 150 200 1.0E+01 1.0E+00 40 1.1 IS (A) BVDSS (Normalized) 0 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.2 1 125°C 1.0E-01 25°C 1.0E-02 0.9 1.0E-03 0.8 -100 1.0E-04 -50 0 50 o 100 150 200 TJ ( C) Figure 5: Break Down vs. Junction Temperature 3/6 -50 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics www.freescale.net.cn AON7462 300V,2.5A N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 15 1000 Capacitance (pF) VGS (Volts) Ciss VDS=240V ID=0.9A 12 9 6 Coss 10 Crss 1 3 0 0 0 2 4 6 8 Qg (nC) Figure 7: Gate-Charge Characteristics 10 0.1 100 1 10 VDS (Volts) Figure 8: Capacitance Characteristics 100 400 RDS(ON) limited 10µs 1 100µs 0.1 1ms 10ms DC 1 200 100 0.1s TJ(Max)=150°C TC=25°C 0.01 TJ(Max)=150°C TC=25°C 300 Power (W) 10 ID (Amps) 100 10 100 1000 0 0.0001 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) ZθJC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=5°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) 4/6 www.freescale.net.cn AON7462 300V,2.5A N-Channel MOSFET 30 3.0 25 2.5 Current rating ID(A) Power Dissipation (W) TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 20 15 10 5 2.0 1.5 1.0 0.5 0 0.0 0 25 50 75 100 125 150 0 TCASE (°C) Figure 12: Power De-rating (Note B) 25 50 75 100 125 TCASE (°C) Figure 13: Current De-rating (Note B) 150 100 TJ(Max)=150°C TA=25°C Power (W) 80 60 40 20 0 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note G) 100 1000 ZθJA Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=75°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 0.01 Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 15: Normalized Maximum Transient Thermal Impedance (Note G) 5/6 www.freescale.net.cn AON7462 300V,2.5A N-Channel MOSFET Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - VDC DUT Qgs Qgd - Vgs Ig Charge Res istive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs Rg + VDC 90% Vdd - 10% Vgs Vgs t d(on) tr t d(off) t on tf t off Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L EAR= 1/2 LI Vds 2 AR BVDSS Vds Id + Vgs Vgs VDC Rg - Vdd I AR Id DUT Vgs Vgs Diode Recovery Tes t Circuit & Waveforms Qrr = - Idt Vds + DUT Vds - Isd Vgs Ig 6/6 Vgs L Isd + Vdd VDC - IF trr dI/dt IRM Vds Vdd www.freescale.net.cn