Data Sheet

BAV23 series
Dual high-voltage switching diodes
Rev. 07 — 19 March 2010
Product data sheet
1. Product profile
1.1 General description
Dual high-voltage switching diodes, encapsulated in small Surface-Mounted
Device (SMD) plastic packages.
Table 1.
Product overview
Type number
Package
Configuration
NXP
JEDEC
BAV23A
SOT23
TO-236AB
dual common anode
BAV23C
SOT23
TO-236AB
dual common cathode
BAV23S
SOT23
TO-236AB
dual series
BAV23
SOT143B
-
dual isolated
1.2 Features and benefits
 High switching speed: trr  50 ns
 Low leakage current
 Repetitive peak reverse voltage:
VRRM  250 V
 Low capacitance: Cd  2 pF
 Small SMD plastic package
1.3 Applications
 High-speed switching at high voltage
 High-voltage general-purpose switching
1.4 Quick reference data
Table 2.
Symbol
Quick reference data
Parameter
Conditions
Min
Typ
Max
Unit
IR
reverse current
VR = 200 V
-
-
100
nA
VR
reverse voltage
-
-
200
V
-
-
50
ns
Per diode
trr
[1]
reverse recovery time
[1]
When switched from IF = 10 mA to IR = 10 mA; RL = 100 ; measured at IR = 1 mA.
BAV23 series
NXP Semiconductors
Dual high-voltage switching diodes
2. Pinning information
Table 3.
Pin
Pinning
Description
Simplified outline
Graphic symbol
BAV23A
1
cathode (diode 1)
2
cathode (diode 2)
3
common anode
3
3
1
2
1
2
006aab099
BAV23C
1
anode (diode 1)
2
anode (diode 2)
3
common cathode
3
3
1
2
1
2
006aab034
BAV23S
1
anode (diode 1)
2
cathode (diode 2)
3
cathode (diode 1),
anode (diode 2)
3
3
1
2
1
2
006aaa763
BAV23
1
cathode (diode 1)
2
cathode (diode 2)
3
anode (diode 2)
4
anode (diode 1)
4
1
3
4
3
2
1
2
006aab100
BAV23_SER_7
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 07 — 19 March 2010
© NXP B.V. 2010. All rights reserved.
2 of 13
BAV23 series
NXP Semiconductors
Dual high-voltage switching diodes
3. Ordering information
Table 4.
Ordering information
Type number
Package
Name
Description
Version
-
plastic surface-mounted package; 3 leads
SOT23
BAV23
-
plastic surface-mounted package; 4 leads
SOT143B
Table 5.
Marking codes
BAV23A
BAV23C
BAV23S
4. Marking
Type number
Marking code[1]
BAV23A
*V0
BAV23C
*V9
BAV23S
*V5
BAV23
*L3
[1]
* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
5. Limiting values
Table 6.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
-
250
V
Per diode
VRRM
repetitive peak reverse
voltage
VR
reverse voltage
IF
BAV23_SER_7
Product data sheet
forward current
IFRM
repetitive peak forward
current
IFSM
non-repetitive peak forward
current
square wave
-
200
V
[1]
-
225
mA
[2]
-
125
mA
-
625
mA
[3]
tp = 1 s
-
9
A
tp = 100 s
-
3
A
tp = 10 ms
-
1.7
A
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Rev. 07 — 19 March 2010
© NXP B.V. 2010. All rights reserved.
3 of 13
BAV23 series
NXP Semiconductors
Dual high-voltage switching diodes
Table 6.
Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
Ptot
total power dissipation
Tamb  25 C
-
250
mW
Tj
Tamb
junction temperature
-
150
C
ambient temperature
65
+150
C
Tstg
storage temperature
65
+150
C
Per device
[1]
[4]
Single diode loaded.
[2]
Double diode loaded.
[3]
Tj = 25 C prior to surge.
[4]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
6. Thermal characteristics
Table 7.
Symbol
Thermal characteristics
Parameter
Conditions
Rth(j-a)
thermal resistance from
junction to ambient
in free air
Rth(j-sp)
thermal resistance from
junction to solder point
Min
Typ
Max
Unit
-
-
500
K/W
-
-
360
K/W
Per device
[1]
[1]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
7. Characteristics
Table 8.
Characteristics
Tamb = 25 C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
forward voltage
IF = 100 mA
-
-
1.0
V
IF = 200 mA
-
-
1.25
V
VR = 200 V
-
-
100
nA
VR = 200 V; Tj = 150 C
-
-
100
A
-
-
2
pF
-
-
50
ns
Per diode
VF
IR
Cd
diode capacitance
trr
reverse recovery time
[1]
BAV23_SER_7
Product data sheet
reverse current
f = 1 MHz; VR = 0 V
[1]
When switched from IF = 10 mA to IR = 10 mA; RL = 100 ; measured at IR = 1 mA.
All information provided in this document is subject to legal disclaimers.
Rev. 07 — 19 March 2010
© NXP B.V. 2010. All rights reserved.
4 of 13
BAV23 series
NXP Semiconductors
Dual high-voltage switching diodes
006aab212
600
mbg703
102
IFSM
(A)
IF
(mA)
10
400
(2)
200
(1)
1
(3)
(4)
10−1
0
0
0.4
0.8
1.2
10
1
1.6
102
103
104
tp (μs)
VF (V)
(1) Tamb = 150 C
Based on square wave currents.
(2) Tamb = 85 C
Tj = 25 C; prior to surge
(3) Tamb = 25 C
(4) Tamb = 40 C
Fig 1.
Forward current as a function of forward
voltage; typical values
Fig 2.
Non-repetitive peak forward current as a
function of pulse duration; maximum values
006aab213
102
IR
(μA)
10
(1)
(2)
1
10−1
(3)
10−2
10−3
10−4
(4)
10−5
0
50
100
150
200
250
VR (V)
(1) Tamb = 150 C
(2) Tamb = 85 C
(3) Tamb = 25 C
(4) Tamb = 40 C
Fig 3.
Reverse current as a function of reverse voltage; typical values
BAV23_SER_7
Product data sheet
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Rev. 07 — 19 March 2010
© NXP B.V. 2010. All rights reserved.
5 of 13
BAV23 series
NXP Semiconductors
Dual high-voltage switching diodes
mbg447
1.0
006aab214
300
Cd
(pF)
IF
(mA)
(1)
0.8
200
0.6
(2)
100
0.4
0.2
0
2
4
6
VR (V)
0
8
0
f = 1 MHz; Tamb = 25 C
50
100
150
200
Tamb (°C)
FR4 PCB, standard footprint
(1) Single diode loaded.
(2) Double diode loaded.
Fig 4.
Diode capacitance as a function of reverse
voltage; typical values
Fig 5.
Forward current as a function of ambient
temperature; derating curves
8. Test information
tr
t
D.U.T.
RS = 50 Ω
V = VR + IF × RS
tp
10 %
+ IF
IF
SAMPLING
OSCILLOSCOPE
trr
t
Ri = 50 Ω
VR
(1)
90 %
mga881
input signal
output signal
(1) IR = 1 mA
Fig 6.
Reverse recovery time test circuit and waveforms
BAV23_SER_7
Product data sheet
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Rev. 07 — 19 March 2010
© NXP B.V. 2010. All rights reserved.
6 of 13
BAV23 series
NXP Semiconductors
Dual high-voltage switching diodes
9. Package outline
3.0
2.8
3.0
2.8
1.1
0.9
1.1
0.9
1.9
3
4
3
0.45
0.15
2.5 1.4
2.1 1.2
2.5
2.1
1
1
2
0.48
0.38
1.9
2
0.88
0.78
0.15
0.09
0.48
0.38
0.15
0.09
1.7
Dimensions in mm
Fig 7.
0.45
0.15
1.4
1.2
04-11-04
Package outline SOT23 (TO-236AB)
Dimensions in mm
Fig 8.
04-11-16
Package outline SOT143B
10. Packing information
Table 9.
Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.[1]
Type number
BAV23A
Package
Description
Packing quantity
3000
10000
SOT23
4 mm pitch, 8 mm tape and reel
-215
-235
SOT143B
4 mm pitch, 8 mm tape and reel
-215
-235
BAV23C
BAV23S
BAV23
[1]
BAV23_SER_7
Product data sheet
For further information and the availability of packing methods, see Section 14.
All information provided in this document is subject to legal disclaimers.
Rev. 07 — 19 March 2010
© NXP B.V. 2010. All rights reserved.
7 of 13
BAV23 series
NXP Semiconductors
Dual high-voltage switching diodes
11. Soldering
3.3
2.9
1.9
solder lands
solder resist
3
2
1.7
solder paste
0.6
(3×)
0.7
(3×)
occupied area
Dimensions in mm
0.5
(3×)
0.6
(3×)
1
Fig 9.
sot023_fr
Reflow soldering footprint SOT23 (TO-236AB)
2.2
1.2
(2×)
1.4
(2×)
solder lands
4.6
solder resist
2.6
occupied area
Dimensions in mm
1.4
preferred transport direction during soldering
2.8
4.5
sot023_fw
Fig 10. Wave soldering footprint SOT23 (TO-236AB)
BAV23_SER_7
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 07 — 19 March 2010
© NXP B.V. 2010. All rights reserved.
8 of 13
BAV23 series
NXP Semiconductors
Dual high-voltage switching diodes
3.25
0.6
(3×)
0.5
(3×)
1.9
solder lands
0.7 0.6
(3×) (3×)
solder resist
2
solder paste
3
occupied area
0.7 0.6
Dimensions in mm
0.75
0.95
0.9
1
sot143b_fr
Fig 11. Reflow soldering footprint SOT143B
4.45
2.2
1.2
(3×)
1.425
(3×)
solder lands
solder resist
4.6
2.575
occupied area
Dimensions in mm
1.425
preferred transport direction during soldering
1
1.2
sot143b_fw
Fig 12. Wave soldering footprint SOT143B
BAV23_SER_7
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 07 — 19 March 2010
© NXP B.V. 2010. All rights reserved.
9 of 13
BAV23 series
NXP Semiconductors
Dual high-voltage switching diodes
12. Revision history
Table 10.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
BAV23_SER_7
20100319
Product data sheet
-
BAV23_SER_6
Modifications:
BAV23_SER_6
•
•
•
•
•
•
Type numbers BAV23A/DG, BAV23C/DG, BAV23S/DG and BAV23/DG deleted
Type numbers BAV23A and BAV23C added
Table 5 “Marking codes”: updated
Figure 6: adaptation of test condition to specified characteristics in Table 8
Figure 9, 10, 11 and 12: updated
Section 13 “Legal information”: updated
20080303
Product data sheet
-
BAV23S_5
BAV23_2
BAV23S_5
20011012
Product specification
-
BAV23S_4
BAV23_2
19960917
Product specification
-
BAV23_1
BAV23_SER_7
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 07 — 19 March 2010
© NXP B.V. 2010. All rights reserved.
10 of 13
BAV23 series
NXP Semiconductors
Dual high-voltage switching diodes
13. Legal information
13.1 Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
13.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
13.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
BAV23_SER_7
Product data sheet
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on a weakness or default in the
customer application/use or the application/use of customer’s third party
customer(s) (hereinafter both referred to as “Application”). It is customer’s
sole responsibility to check whether the NXP Semiconductors product is
suitable and fit for the Application planned. Customer has to do all necessary
testing for the Application in order to avoid a default of the Application and the
product. NXP Semiconductors does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
13.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
All information provided in this document is subject to legal disclaimers.
Rev. 07 — 19 March 2010
© NXP B.V. 2010. All rights reserved.
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BAV23 series
NXP Semiconductors
Dual high-voltage switching diodes
14. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
BAV23_SER_7
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 07 — 19 March 2010
© NXP B.V. 2010. All rights reserved.
12 of 13
BAV23 series
NXP Semiconductors
Dual high-voltage switching diodes
15. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
9
10
11
12
13
13.1
13.2
13.3
13.4
14
15
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description . . . . . . . . . . . . . . . . . . . . . 1
Features and benefits . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 3
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . 4
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Test information . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7
Packing information . . . . . . . . . . . . . . . . . . . . . 7
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10
Legal information. . . . . . . . . . . . . . . . . . . . . . . 11
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Contact information. . . . . . . . . . . . . . . . . . . . . 12
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2010.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 19 March 2010
Document identifier: BAV23_SER_7