Data Sheet

BAS28
High-speed double diode
Rev. 3 — 22 July 2010
Product data sheet
1. Product profile
1.1 General description
Two high-speed switching diodes fabricated in planar technology, and encapsulated in a
small SOT143B Surface-Mounted Device (SMD) plastic package. The diodes are not
connected.
1.2 Features and benefits
„
„
„
„
„
„
High switching speed: trr ≤ 4 ns
Reverse voltage: VR ≤ 75 V
Repetitive peak reverse voltage: VRRM ≤ 85 V
Repetitive peak forward current: IFRM ≤ 500 mA
AEC-Q101 qualified
Small SMD package
1.3 Applications
„ High-speed switching in e.g. surface-mounted circuits
1.4 Quick reference data
Table 1.
Symbol
Quick reference data
Parameter
Conditions
Min
Typ
Max
Unit
-
-
215
mA
-
-
1
μA
-
-
75
V
-
-
4
ns
Per diode
IF
forward current
IR
reverse current
VR
reverse voltage
trr
[1]
VR = 75 V
reverse recovery time
[2]
[1]
Device mounted on an FR4 Printed-Circuit Board (PCB).
[2]
When switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA.
BAS28
NXP Semiconductors
High-speed double diode
2. Pinning information
Table 2.
Pinning
Pin
Description
Simplified outline
1
cathode (diode 1)
2
cathode (diode 2)
3
anode (diode 2)
4
anode (diode 1)
4
1
3
Graphic symbol
4
3
2
1
2
006aab100
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name
Description
Version
BAS28
-
plastic surface-mounted package; 4 leads
SOT143B
Table 4.
Marking codes
4. Marking
Type number
Marking code[1]
BAS28
JT*
[1]
* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
BAS28
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 22 July 2010
© NXP B.V. 2010. All rights reserved.
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BAS28
NXP Semiconductors
High-speed double diode
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
-
85
V
-
75
V
-
215
mA
-
500
mA
tp = 1 μs
-
4
A
tp = 1 ms
-
1
A
tp = 1 s
-
0.5
A
-
250
mW
Per diode
VRRM
repetitive peak
reverse voltage
VR
reverse voltage
IF
forward current
IFRM
repetitive peak
forward current
IFSM
non-repetitive peak
forward current
[1]
square wave
[3]
Per device
Tamb = 25 °C
[1][2]
Ptot
total power dissipation
Tj
junction temperature
-
150
°C
Tstg
storage temperature
−65
+150
°C
[1]
Device mounted on an FR4 PCB.
[2]
One diode loaded.
[3]
Tj = 25 °C prior to surge.
6. Thermal characteristics
Table 6.
Symbol
Thermal characteristics
Parameter
Conditions
Min
Typ
Max
Unit
-
-
500
K/W
-
-
360
K/W
Per device; one diode loaded
Rth(j-a)
thermal resistance from
junction to ambient
Rth(j-t)
thermal resistance from
junction to tie-point
[1]
BAS28
Product data sheet
in free air
[1]
Device mounted on an FR4 PCB.
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 22 July 2010
© NXP B.V. 2010. All rights reserved.
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BAS28
NXP Semiconductors
High-speed double diode
7. Characteristics
Table 7.
Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
forward voltage
IF = 1 mA
-
-
715
mV
IF = 10 mA
-
-
855
mV
IF = 50 mA
-
-
1
V
IF = 150 mA
-
-
1.25
V
VR = 25 V
-
-
30
nA
VR = 75 V
-
-
1
μA
VR = 25 V; Tj = 150 °C
-
-
30
μA
VR = 75 V; Tj = 150 °C
-
-
50
μA
Per diode
VF
reverse current
IR
Cd
diode capacitance
-
-
1.5
pF
trr
reverse recovery time
[1]
-
-
4
ns
forward recovery voltage
[2]
-
-
1.75
V
VFR
f = 1 MHz; VR = 0 V
[1]
When switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA.
[2]
When switched from IF = 10 mA; tr = 20 ns.
mbg382
300
IF
(mA)
IFSM
(A)
(1)
(2)
(3)
200
10
100
1
0
mbg704
102
10−1
0
1
VF (V)
2
1
10
102
103
104
tp (μs)
(1) Tj = 150 °C; typical values
Based on square wave currents.
(2) Tj = 25 °C; typical values
Tj = 25 °C; prior to surge
(3) Tj = 25 °C; maximum values
Fig 1.
Forward current as a function of forward
voltage
BAS28
Product data sheet
Fig 2.
Non-repetitive peak forward current as a
function of pulse duration; maximum values
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 22 July 2010
© NXP B.V. 2010. All rights reserved.
4 of 12
BAS28
NXP Semiconductors
High-speed double diode
mga884
105
mbg446
0.8
Cd
(pF)
IR
(nA)
(1)
104
0.6
(2)
103
0.4
(3)
102
10
0.2
0
0
100
Tj (°C)
0
200
4
8
12
VR (V)
16
f = 1 MHz; Tj = 25 °C
VR = VRmax
(1) VR = 75 V; maximum values
(2) VR = 75 V; typical values
(3) VR = 25 V; typical values
Fig 3.
Reverse current as a function of junction
temperature
Fig 4.
Diode capacitance as a function of reverse
voltage; typical values
msa562
250
IF
(mA)
200
150
100
50
0
0
Fig 5.
50
100
150
200
Tamb (°C)
Forward current as a function of ambient temperature; derating curve
BAS28
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 22 July 2010
© NXP B.V. 2010. All rights reserved.
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BAS28
NXP Semiconductors
High-speed double diode
8. Test information
tr
tp
t
D.U.T.
10 %
+ IF
IF
RS = 50 Ω
SAMPLING
OSCILLOSCOPE
trr
t
Ri = 50 Ω
V = VR + IF × RS
(1)
90 %
VR
mga881
input signal
output signal
(1) IR = 1 mA
Fig 6.
Reverse recovery time test circuit and waveforms
I
1 kΩ
RS = 50 Ω
D.U.T.
450 Ω
I
V
90 %
OSCILLOSCOPE
VFR
Ri = 50 Ω
10 %
t
tr
t
tp
input signal
output signal
mga882
Fig 7.
Forward recovery voltage test circuit and waveforms
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
BAS28
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 22 July 2010
© NXP B.V. 2010. All rights reserved.
6 of 12
BAS28
NXP Semiconductors
High-speed double diode
9. Package outline
3.0
2.8
1.1
0.9
1.9
4
2.5
2.1
3
0.45
0.15
1.4
1.2
1
2
0.88
0.78
0.48
0.38
0.15
0.09
1.7
Dimensions in mm
Fig 8.
04-11-16
Package outline BAS28 (SOT143B)
10. Packing information
Table 8.
Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.[1]
Type number
BAS28
[1]
BAS28
Product data sheet
Package
SOT143B
Description
4 mm pitch, 8 mm tape and reel
Packing quantity
3000
10000
-215
-235
For further information and the availability of packing methods, see Section 14.
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 22 July 2010
© NXP B.V. 2010. All rights reserved.
7 of 12
BAS28
NXP Semiconductors
High-speed double diode
11. Soldering
3.25
0.6
(3×)
0.5
(3×)
1.9
solder lands
0.7 0.6
(3×) (3×)
solder resist
2
solder paste
3
occupied area
0.7 0.6
Dimensions in mm
0.75
0.95
0.9
1
Fig 9.
sot143b_fr
Reflow soldering footprint BAS28 (SOT143B)
4.45
2.2
1.2
(3×)
1.425
(3×)
solder lands
solder resist
4.6
2.575
occupied area
Dimensions in mm
1.425
preferred transport direction during soldering
1
1.2
sot143b_fw
Fig 10. Wave soldering footprint BAS28 (SOT143B)
BAS28
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 22 July 2010
© NXP B.V. 2010. All rights reserved.
8 of 12
BAS28
NXP Semiconductors
High-speed double diode
12. Revision history
Table 9.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
BAS28 v.3
20100722
Product data sheet
-
BAS28_2
Modifications:
•
The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
•
•
•
•
•
•
•
•
•
Legal texts have been adapted to the new company name where appropriate.
Section 1.1 “General description”: amended
Section 4 “Marking”: updated
Table 1 “Quick reference data”: added
Section 8 “Test information”: added
Figure 8: superseded by minimized package outline drawing
Section 10 “Packing information”: added
Section 11 “Soldering”: added
Section 13 “Legal information”: updated
BAS28_2
19960910
Product specification
-
BAS28_1
BAS28_1
19960403
Product specification
-
-
BAS28
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 22 July 2010
© NXP B.V. 2010. All rights reserved.
9 of 12
BAS28
NXP Semiconductors
High-speed double diode
13. Legal information
13.1 Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
13.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
13.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.
BAS28
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 22 July 2010
© NXP B.V. 2010. All rights reserved.
10 of 12
BAS28
NXP Semiconductors
High-speed double diode
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
13.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
14. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
BAS28
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 22 July 2010
© NXP B.V. 2010. All rights reserved.
11 of 12
BAS28
NXP Semiconductors
High-speed double diode
15. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
8.1
9
10
11
12
13
13.1
13.2
13.3
13.4
14
15
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description . . . . . . . . . . . . . . . . . . . . . 1
Features and benefits . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . 3
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Test information . . . . . . . . . . . . . . . . . . . . . . . . . 6
Quality information . . . . . . . . . . . . . . . . . . . . . . 6
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7
Packing information . . . . . . . . . . . . . . . . . . . . . 7
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 9
Legal information. . . . . . . . . . . . . . . . . . . . . . . 10
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 10
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Contact information. . . . . . . . . . . . . . . . . . . . . 11
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2010.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 22 July 2010
Document identifier: BAS28