BAS21W series High-voltage switching diodes Rev. 01 — 9 October 2009 Product data sheet 1. Product profile 1.1 General description High-voltage switching diodes, encapsulated in a very small Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number Configuration Package BAS21W single BAS21AW dual common anode BAS21SW dual series NXP JEDEC Package configuration SOT323 SC-70 very small 1.2 Features n High switching speed: trr ≤ 50 ns n Low leakage current n High reverse voltage: VR ≤ 250 V n Low capacitance: Cd ≤ 2 pF n Very small SMD plastic package n AEC-Q101 qualified 1.3 Applications n High-speed switching n General-purpose switching n Voltage clamping n Reverse polarity protection 1.4 Quick reference data Table 2. Symbol Quick reference data Parameter Conditions Min Typ Max Unit - - 225 mA - - 100 nA - - 250 V - - 50 ns Per diode IF forward current IR reverse current VR reverse voltage trr reverse recovery time [1] VR = 200 V [2] [1] Single diode loaded. [2] When switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA. BAS21W series NXP Semiconductors High-voltage switching diodes 2. Pinning information Table 3. Pinning Pin Description Simplified outline Graphic symbol BAS21W 1 anode 2 not connected 3 cathode 3 3 1 2 006aaa764 1 2 BAS21AW 1 cathode (diode 1) 2 cathode (diode 2) 3 common anode 3 1 3 2 1 2 006aab099 BAS21SW 1 anode (diode 1) 2 cathode (diode 2) 3 cathode (diode 1), anode (diode 2) 3 1 3 2 1 2 006aaa763 3. Ordering information Table 4. Ordering information Type number BAS21W Package Name Description Version SC-70 plastic surface-mounted package; 3 leads SOT323 BAS21AW BAS21SW BAS21W_SER_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 9 October 2009 2 of 11 BAS21W series NXP Semiconductors High-voltage switching diodes 4. Marking Table 5. Marking codes Type number Marking code[1] BAS21W X4* BAS21AW X6* BAS21SW X5* [1] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China 5. Limiting values Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Per diode reverse voltage VR - 250 V [1] - 225 mA [2] - 125 mA - 625 mA tp = 1 µs - 9 A tp = 100 µs - 3 A tp = 10 ms - 1.7 A - 200 mW forward current IF IFRM repetitive peak forward current IFSM non-repetitive peak forward current square wave [3] Per device Tamb ≤ 25 °C total power dissipation Tj junction temperature - 150 °C Tamb ambient temperature −55 +150 °C Tstg storage temperature −65 +150 °C [1] Single diode loaded. [2] Double diode loaded. [3] Tj = 25 °C prior to surge. [4] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. BAS21W_SER_1 Product data sheet [4] Ptot © NXP B.V. 2009. All rights reserved. Rev. 01 — 9 October 2009 3 of 11 BAS21W series NXP Semiconductors High-voltage switching diodes 6. Thermal characteristics Table 7. Symbol Thermal characteristics Parameter Conditions Rth(j-a) thermal resistance from junction to ambient in free air Rth(j-sp) thermal resistance from junction to solder point Min Typ Max Unit - - 625 K/W - - 300 K/W Per device [1] [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. 7. Characteristics Table 8. Characteristics Tamb = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit VF forward voltage IF = 100 mA - - 1.0 V IR reverse current Per diode Cd trr [1] diode capacitance IF = 200 mA - - 1.25 V VR = 200 V - - 100 nA VR = 200 V; Tj = 150 °C - - 100 µA - - 2 pF - - 50 ns f = 1 MHz; VR = 0 V reverse recovery time When switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA. BAS21W_SER_1 Product data sheet [1] © NXP B.V. 2009. All rights reserved. Rev. 01 — 9 October 2009 4 of 11 BAS21W series NXP Semiconductors High-voltage switching diodes 006aab212 600 mbg703 102 IFSM (A) IF (mA) 10 400 (2) 200 (1) 1 (3) (4) 10−1 0 0 0.4 0.8 1.2 1 1.6 10 102 103 104 tp (µs) VF (V) (1) Tamb = 150 °C Based on square wave currents. (2) Tamb = 85 °C Tj = 25 °C; prior to surge (3) Tamb = 25 °C (4) Tamb = −40 °C Fig 1. Forward current as a function of forward voltage; typical values Fig 2. Non-repetitive peak forward current as a function of pulse duration; maximum values 006aab213 102 IR (µA) 10 (1) (2) 1 10−1 (3) 10−2 10−3 10−4 10−5 0 (4) 50 100 150 200 250 VR (V) (1) Tamb = 150 °C (2) Tamb = 85 °C (3) Tamb = 25 °C (4) Tamb = −40 °C Fig 3. Reverse current as a function of reverse voltage; typical values BAS21W_SER_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 9 October 2009 5 of 11 BAS21W series NXP Semiconductors High-voltage switching diodes mbg447 1.0 006aab214 300 Cd (pF) IF (mA) (1) 0.8 200 0.6 (2) 100 0.4 0.2 0 2 4 6 VR (V) 0 8 0 f = 1 MHz; Tamb = 25 °C 50 100 150 200 Tamb (°C) FR4 PCB, standard footprint (1) Single diode loaded. (2) Double diode loaded. Fig 4. Diode capacitance as a function of reverse voltage; typical values Fig 5. Forward current as a function of ambient temperature; derating curve 8. Test information tr tp t D.U.T. 10 % + IF IF RS = 50 Ω SAMPLING OSCILLOSCOPE V = VR + IF × RS trr t Ri = 50 Ω VR (1) 90 % mga881 input signal output signal (1) IR = 1 mA Fig 6. Reverse recovery time test circuit and waveforms 8.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. BAS21W_SER_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 9 October 2009 6 of 11 BAS21W series NXP Semiconductors High-voltage switching diodes 9. Package outline 2.2 1.8 1.1 0.8 0.45 0.15 3 2.2 1.35 2.0 1.15 1 2 0.4 0.3 0.25 0.10 1.3 Dimensions in mm Fig 7. 04-11-04 Package outline SOT323 (SC-70) 10. Packing information Table 9. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number BAS21W Package SOT323 Description 4 mm pitch, 8 mm tape and reel Packing quantity 3000 10000 -115 -135 BAS21AW BAS21SW [1] For further information and the availability of packing methods, see Section 14. BAS21W_SER_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 9 October 2009 7 of 11 BAS21W series NXP Semiconductors High-voltage switching diodes 11. Soldering 2.65 1.85 1.325 solder lands solder resist 2 2.35 0.6 (3×) 3 solder paste 1.3 1 occupied area 0.5 (3×) Dimensions in mm 0.55 (3×) Fig 8. sot323_fr Reflow soldering footprint SOT323 (SC-70) 4.6 2.575 1.425 (3×) solder lands solder resist occupied area 1.8 3.65 2.1 09 (2×) Dimensions in mm preferred transport direction during soldering sot323_fw Fig 9. Wave soldering footprint SOT323 (SC-70) BAS21W_SER_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 9 October 2009 8 of 11 BAS21W series NXP Semiconductors High-voltage switching diodes 12. Revision history Table 10. Revision history Document ID Release date Data sheet status Change notice Supersedes BAS21W_SER_1 20091009 Product data sheet - - BAS21W_SER_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 9 October 2009 9 of 11 BAS21W series NXP Semiconductors High-voltage switching diodes 13. Legal information 13.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 13.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 13.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 13.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 14. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] BAS21W_SER_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 9 October 2009 10 of 11 BAS21W series NXP Semiconductors High-voltage switching diodes 15. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 8.1 9 10 11 12 13 13.1 13.2 13.3 13.4 14 15 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 6 Quality information . . . . . . . . . . . . . . . . . . . . . . 6 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7 Packing information. . . . . . . . . . . . . . . . . . . . . . 7 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 9 Legal information. . . . . . . . . . . . . . . . . . . . . . . 10 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 10 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Contact information. . . . . . . . . . . . . . . . . . . . . 10 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 9 October 2009 Document identifier: BAS21W_SER_1