技术信息/TechnicalInformation IGBT-模块 IGBT-modules F3L400R12PT4_B26 EconoPACK™4模块采用第二类中点钳位拓扑(NPC2)带有pressfit压接管脚和温度检测NTC EconoPACK™4modulewithactive"NeutralPointClamp2"topologyandPressFIT/NTC 初步数据/PreliminaryData VCES = 1200V IC nom = 400A / ICRM = 800A 典型应用 • 太阳能应用 • UPS系统 TypicalApplications • SolarApplications • UPSSystems 电气特性 • 提高工作结温Tvjop • 低开关损耗 • 低VCEsat • 沟槽栅IGBT4 • Tvjop=150°C • VCEsat带正温度系数 ElectricalFeatures • ExtendedOperationTemperatureTvjop • LowSwitchingLosses • LowVCEsat • TrenchIGBT4 • Tvjop=150°C • VCEsatwithpositiveTemperatureCoefficient 机械特性 • 绝缘的基板 • 紧凑型设计 • PressFIT压接技术 • 标封装 MechanicalFeatures • IsolatedBasePlate • Compactdesign • PressFITContactTechnology • StandardHousing ModuleLabelCode BarcodeCode128 DMX-Code preparedby:MK dateofpublication:2013-11-11 approvedby:MK revision:2.0 ContentoftheCode Digit ModuleSerialNumber ModuleMaterialNumber ProductionOrderNumber Datecode(ProductionYear) Datecode(ProductionWeek) 1-5 6-11 12-19 20-21 22-23 ULapproved(E83335) 1 技术信息/TechnicalInformation IGBT-模块 IGBT-modules F3L400R12PT4_B26 初步数据 PreliminaryData IGBT,T1/T4/IGBT,T1/T4 最大额定值/MaximumRatedValues 集电极－发射极电压 Collector-emittervoltage Tvj = 25°C VCES 1200 V 连续集电极直流电流 ContinuousDCcollectorcurrent TC = 100°C, Tvj max = 175°C TC = 25°C, Tvj max = 175°C IC nom IC 400 600 集电极重复峰值电流 Repetitivepeakcollectorcurrent tP = 1 ms ICRM 800 A 总功率损耗 Totalpowerdissipation TC = 25°C, Tvj max = 175°C Ptot 2150 W 栅极－发射极峰值电压 Gate-emitterpeakvoltage VGES +/-20 V 特征值/CharacteristicValues 集电极－发射极饱和电压 Collector-emittersaturationvoltage min. IC = 400 A, VGE = 15 V IC = 400 A, VGE = 15 V IC = 400 A, VGE = 15 V Tvj = 25°C Tvj = 125°C Tvj = 150°C 栅极阈值电压 Gatethresholdvoltage IC = 15,0 mA, VCE = VGE, Tvj = 25°C 栅极电荷 Gatecharge VCE sat A A typ. max. 1,75 2,05 2,10 2,15 V V V VGEth 5,2 5,8 6,4 V VGE = -15 V ... +15 V QG 3,30 µC 内部栅极电阻 Internalgateresistor Tvj = 25°C RGint 1,8 Ω 输入电容 Inputcapacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Cies 25,0 nF 反向传输电容 Reversetransfercapacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Cres 1,35 nF 集电极-发射极截止电流 Collector-emittercut-offcurrent VCE = 1200 V, VGE = 0 V, Tvj = 25°C ICES 1,0 mA 栅极-发射极漏电流 Gate-emitterleakagecurrent VCE = 0 V, VGE = 20 V, Tvj = 25°C IGES 100 nA td on 0,20 0,22 0,23 µs µs µs tr 0,11 0,12 0,12 µs µs µs td off 0,40 0,48 0,50 µs µs µs tf 0,07 0,10 0,11 µs µs µs 开通延迟时间(电感负载) Turn-ondelaytime,inductiveload IC = 400 A, VCE = 300 V VGE = ±15 V RGon = 1,5 Ω Tvj = 25°C Tvj = 125°C Tvj = 150°C 上升时间(电感负载) Risetime,inductiveload IC = 400 A, VCE = 300 V VGE = ±15 V RGon = 1,5 Ω Tvj = 25°C Tvj = 125°C Tvj = 150°C 关断延迟时间(电感负载) Turn-offdelaytime,inductiveload IC = 400 A, VCE = 300 V VGE = ±15 V RGoff = 1,5 Ω Tvj = 25°C Tvj = 125°C Tvj = 150°C 下降时间(电感负载) Falltime,inductiveload IC = 400 A, VCE = 300 V VGE = ±15 V RGoff = 1,5 Ω Tvj = 25°C Tvj = 125°C Tvj = 150°C 开通损耗能量(每脉冲) Turn-onenergylossperpulse IC = 400 A, VCE = 300 V, LS = 35 nH Tvj = 25°C VGE = ±15 V, di/dt = 2650 A/µs (Tvj = 150°C) Tvj = 125°C RGon = 1,5 Ω Tvj = 150°C Eon 8,75 13,0 13,5 mJ mJ mJ 关断损耗能量(每脉冲） Turn-offenergylossperpulse IC = 400 A, VCE = 300 V, LS = 35 nH Tvj = 25°C VGE = ±15 V, du/dt = 2300 V/µs (Tvj = 150°C) Tvj = 125°C RGoff = 1,5 Ω Tvj = 150°C Eoff 18,0 26,0 28,5 mJ mJ mJ 短路数据 SCdata VGE ≤ 15 V, VCC = 800 V VCEmax = VCES -LsCE ·di/dt ISC 2200 1900 A A 结－外壳热阻 Thermalresistance,junctiontocase 每个IGBT/perIGBT RthJC 外壳－散热器热阻 Thermalresistance,casetoheatsink 每个IGBT/perIGBT λPaste=1W/(m·K)/λgrease=1W/(m·K) RthCH 0,046 在开关状态下温度 Temperatureunderswitchingconditions Tvj op -40 preparedby:MK dateofpublication:2013-11-11 approvedby:MK revision:2.0 2 tP ≤ 10 µs, Tvj = 25°C tP ≤ 10 µs, Tvj = 150°C 0,07 K/W K/W 150 °C 技术信息/TechnicalInformation IGBT-模块 IGBT-modules F3L400R12PT4_B26 初步数据 PreliminaryData 二极管,D2/D3/Diode,D2/D3 最大额定值/MaximumRatedValues 反向重复峰值电压 Repetitivepeakreversevoltage Tvj = 25°C 连续正向直流电流 ContinuousDCforwardcurrent 正向重复峰值电流 Repetitivepeakforwardcurrent tP = 1 ms I2t-值 I²t-value VR = 0 V, tP = 10 ms, Tvj = 125°C VR = 0 V, tP = 10 ms, Tvj = 150°C VRRM 650 V IF 400 A IFRM 800 A I²t 6700 6150 特征值/CharacteristicValues min. typ. max. 1,55 1,50 1,45 1,95 A²s A²s 正向电压 Forwardvoltage IF = 400 A, VGE = 0 V IF = 400 A, VGE = 0 V IF = 400 A, VGE = 0 V Tvj = 25°C Tvj = 125°C Tvj = 150°C VF 反向恢复峰值电流 Peakreverserecoverycurrent IF = 400 A, - diF/dt = 2650 A/µs (Tvj=150°C) Tvj = 25°C VR = 300 V Tvj = 125°C VGE = -15 V Tvj = 150°C IRM 145 205 215 A A A 恢复电荷 Recoveredcharge IF = 400 A, - diF/dt = 2650 A/µs (Tvj=150°C) Tvj = 25°C VR = 300 V Tvj = 125°C VGE = -15 V Tvj = 150°C Qr 13,5 26,0 28,5 µC µC µC 反向恢复损耗（每脉冲） Reverserecoveryenergy IF = 400 A, - diF/dt = 2650 A/µs (Tvj=150°C) Tvj = 25°C VR = 300 V Tvj = 125°C VGE = -15 V Tvj = 150°C Erec 3,40 6,35 7,15 mJ mJ mJ 结－外壳热阻 Thermalresistance,junctiontocase 每个二极管/perdiode RthJC 外壳－散热器热阻 Thermalresistance,casetoheatsink 每个二极管/perdiode λPaste=1W/(m·K)/λgrease=1W/(m·K) RthCH 0,077 在开关状态下温度 Temperatureunderswitchingconditions Tvj op -40 preparedby:MK dateofpublication:2013-11-11 approvedby:MK revision:2.0 3 V V V 0,22 K/W K/W 150 °C 技术信息/TechnicalInformation IGBT-模块 IGBT-modules F3L400R12PT4_B26 初步数据 PreliminaryData IGBT,T2/T3/IGBT,T2/T3 最大额定值/MaximumRatedValues 集电极－发射极电压 Collector-emittervoltage Tvj = 25°C VCES 650 V 连续集电极直流电流 ContinuousDCcollectorcurrent TC = 0°C, Tvj max = 175°C TC = 25°C, Tvj max = 175°C IC nom IC 400 360 集电极重复峰值电流 Repetitivepeakcollectorcurrent tP = 1 ms ICRM 800 A 总功率损耗 Totalpowerdissipation TC = 25°C, Tvj max = 175°C Ptot 880 W 栅极－发射极峰值电压 Gate-emitterpeakvoltage VGES +/-20 V 特征值/CharacteristicValues 集电极－发射极饱和电压 Collector-emittersaturationvoltage min. IC = 400 A, VGE = 15 V IC = 400 A, VGE = 15 V IC = 400 A, VGE = 15 V Tvj = 25°C Tvj = 125°C Tvj = 150°C 栅极阈值电压 Gatethresholdvoltage IC = 4,80 mA, VCE = VGE, Tvj = 25°C 栅极电荷 Gatecharge VCE sat A A typ. max. 1,75 2,00 2,10 2,15 V V V VGEth 4,9 5,8 6,5 V VGE = -15 V ... +15 V QG 3,20 µC 内部栅极电阻 Internalgateresistor Tvj = 25°C RGint 1,0 Ω 输入电容 Inputcapacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Cies 18,5 nF 反向传输电容 Reversetransfercapacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Cres 0,57 nF 集电极-发射极截止电流 Collector-emittercut-offcurrent VCE = 650 V, VGE = 0 V, Tvj = 25°C ICES 1,0 mA 栅极-发射极漏电流 Gate-emitterleakagecurrent VCE = 0 V, VGE = 20 V, Tvj = 25°C IGES 100 nA td on 0,08 0,10 0,10 µs µs µs tr 0,09 0,10 0,10 µs µs µs td off 0,35 0,37 0,38 µs µs µs tf 0,08 0,11 0,11 µs µs µs 开通延迟时间(电感负载) Turn-ondelaytime,inductiveload IC = 400 A, VCE = 300 V VGE = ±15 V RGon = 1,5 Ω Tvj = 25°C Tvj = 125°C Tvj = 150°C 上升时间(电感负载) Risetime,inductiveload IC = 400 A, VCE = 300 V VGE = ±15 V RGon = 1,5 Ω Tvj = 25°C Tvj = 125°C Tvj = 150°C 关断延迟时间(电感负载) Turn-offdelaytime,inductiveload IC = 400 A, VCE = 300 V VGE = ±15 V RGoff = 1,5 Ω Tvj = 25°C Tvj = 125°C Tvj = 150°C 下降时间(电感负载) Falltime,inductiveload IC = 400 A, VCE = 300 V VGE = ±15 V RGoff = 1,5 Ω Tvj = 25°C Tvj = 125°C Tvj = 150°C 开通损耗能量(每脉冲) Turn-onenergylossperpulse IC = 400 A, VCE = 300 V, LS = 35 nH Tvj = 25°C VGE = ±15 V, di/dt = 3300 A/µs (Tvj = 150°C) Tvj = 125°C RGon = 1,5 Ω Tvj = 150°C Eon 6,30 9,40 11,0 mJ mJ mJ 关断损耗能量(每脉冲） Turn-offenergylossperpulse IC = 400 A, VCE = 300 V, LS = 35 nH Tvj = 25°C VGE = ±15 V, du/dt = 3350 V/µs (Tvj = 150°C) Tvj = 125°C RGoff = 1,5 Ω Tvj = 150°C Eoff 20,0 23,5 24,5 mJ mJ mJ 短路数据 SCdata VGE ≤ 15 V, VCC = 360 V VCEmax = VCES -LsCE ·di/dt ISC 1800 1400 A A 结－外壳热阻 Thermalresistance,junctiontocase 每个IGBT/perIGBT RthJC 外壳－散热器热阻 Thermalresistance,casetoheatsink 每个IGBT/perIGBT λPaste=1W/(m·K)/λgrease=1W/(m·K) RthCH 0,074 在开关状态下温度 Temperatureunderswitchingconditions Tvj op -40 preparedby:MK dateofpublication:2013-11-11 approvedby:MK revision:2.0 4 tP ≤ 10 µs, Tvj = 25°C tP ≤ 10 µs, Tvj = 150°C 0,17 K/W K/W 150 °C 技术信息/TechnicalInformation IGBT-模块 IGBT-modules F3L400R12PT4_B26 初步数据 PreliminaryData 二极管,D1/D4/Diode,D1/D4 最大额定值/MaximumRatedValues 反向重复峰值电压 Repetitivepeakreversevoltage Tvj = 25°C 连续正向直流电流 ContinuousDCforwardcurrent 正向重复峰值电流 Repetitivepeakforwardcurrent tP = 1 ms I2t-值 I²t-value VR = 0 V, tP = 10 ms, Tvj = 125°C VR = 0 V, tP = 10 ms, Tvj = 150°C VRRM 1200 V IF 400 A IFRM 800 A I²t 15500 11500 特征值/CharacteristicValues min. typ. max. 1,80 1,85 1,90 2,30 A²s A²s 正向电压 Forwardvoltage IF = 400 A, VGE = 0 V IF = 400 A, VGE = 0 V IF = 400 A, VGE = 0 V Tvj = 25°C Tvj = 125°C Tvj = 150°C VF 反向恢复峰值电流 Peakreverserecoverycurrent IF = 400 A, - diF/dt = 3300 A/µs (Tvj=150°C) Tvj = 25°C VR = 300 V Tvj = 125°C Tvj = 150°C IRM 255 310 325 A A A 恢复电荷 Recoveredcharge IF = 400 A, - diF/dt = 3300 A/µs (Tvj=150°C) Tvj = 25°C VR = 300 V Tvj = 125°C Tvj = 150°C Qr 29,0 56,0 65,0 µC µC µC 反向恢复损耗（每脉冲） Reverserecoveryenergy IF = 400 A, - diF/dt = 3300 A/µs (Tvj=150°C) Tvj = 25°C VR = 300 V Tvj = 125°C Tvj = 150°C Erec 8,70 16,5 19,0 mJ mJ mJ 结－外壳热阻 Thermalresistance,junctiontocase 每个二极管/perdiode RthJC 外壳－散热器热阻 Thermalresistance,casetoheatsink 每个二极管/perdiode λPaste=1W/(m·K)/λgrease=1W/(m·K) RthCH 0,056 在开关状态下温度 Temperatureunderswitchingconditions Tvj op -40 150 min. typ. max. R25 5,00 kΩ ∆R/R -5 5 % P25 20,0 mW V V V 0,16 K/W K/W °C 负温度系数热敏电阻/NTC-Thermistor 特征值/CharacteristicValues 额定电阻值 Ratedresistance TC = 25°C R100偏差 DeviationofR100 TC = 100°C, R100 = 493 Ω 耗散功率 Powerdissipation TC = 25°C B-值 B-value R2 = R25 exp [B25/50(1/T2 - 1/(298,15 K))] B25/50 3375 K B-值 B-value R2 = R25 exp [B25/80(1/T2 - 1/(298,15 K))] B25/80 3411 K B-值 B-value R2 = R25 exp [B25/100(1/T2 - 1/(298,15 K))] B25/100 3433 K 根据应用手册标定 Specificationaccordingtothevalidapplicationnote. preparedby:MK dateofpublication:2013-11-11 approvedby:MK revision:2.0 5 技术信息/TechnicalInformation IGBT-模块 IGBT-modules F3L400R12PT4_B26 初步数据 PreliminaryData 模块/Module 绝缘测试电压 Isolationtestvoltage RMS, f = 50 Hz, t = 1 min. 模块基板材料 Materialofmodulebaseplate 内部绝缘 Internalisolation 基本绝缘(class1,IEC61140) basicinsulation(class1,IEC61140) 爬电距离 Creepagedistance VISOL 2,5 kV Cu Al2O3 端子-散热片/terminaltoheatsink 端子-端子/terminaltoterminal 25,0 12,5 mm 电气间隙 Clearance 端子-散热片/terminaltoheatsink 端子-端子/terminaltoterminal 11,0 7,0 mm 相对电痕指数 Comperativetrackingindex CTI > 200 min. typ. max. LsCE 38 nH RCC'+EE' 0,75 mΩ Tstg -40 125 °C 螺丝M5根据相应的应用手册进行安装 ScrewM5-Mountingaccordingtovalidapplicationnote M 3,00 - 6,00 Nm 端子联接扭距 Terminalconnectiontorque 螺丝M6根据相应的应用手册进行安装 ScrewM6-Mountingaccordingtovalidapplicationnote M 3,0 - 6,0 Nm 重量 Weight G 400 g preparedby:MK dateofpublication:2013-11-11 approvedby:MK revision:2.0 杂散电感,模块 Strayinductancemodule 模块引线电阻,端子-芯片 Moduleleadresistance,terminals-chip TC=25°C,每个开关/perswitch 储存温度 Storagetemperature 模块安装的安装扭距 Mountingtorqueformodulmounting 6 技术信息/TechnicalInformation IGBT-模块 IGBT-modules F3L400R12PT4_B26 初步数据 PreliminaryData 输出特性IGBT,T1/T4（典型) outputcharacteristicIGBT,T1/T4(typical) IC=f(VCE) VGE=15V 输出特性IGBT,T1/T4（典型) outputcharacteristicIGBT,T1/T4(typical) IC=f(VCE) Tvj=150°C 800 800 Tvj = 25°C Tvj = 125°C Tvj = 150°C 640 640 560 560 480 480 400 400 320 320 240 240 160 160 80 80 0 0,0 0,5 VGE = 19V VGE = 17V VGE = 15V VGE = 13V VGE = 11V VGE = 9V 720 IC [A] IC [A] 720 1,0 1,5 2,0 VCE [V] 2,5 3,0 0 3,5 传输特性IGBT,T1/T4(典型) transfercharacteristicIGBT,T1/T4(typical) IC=f(VGE) VCE=20V 0,0 0,5 1,0 1,5 2,0 2,5 3,0 VCE [V] 3,5 4,0 4,5 5,0 开关损耗IGBT,T1/T4（典型) switchinglossesIGBT,T1/T4(typical) Eon=f(IC),Eoff=f(IC) VGE=±15V,RGon=1.5Ω,RGoff=1.5Ω,VCE=300V 800 80 Tvj = 25°C Tvj = 125°C Tvj = 150°C 720 Eon, Tvj = 125°C Eon, Tvj = 150°C Eoff, Tvj = 125°C Eoff, Tvj = 150°C 70 640 60 560 50 E [mJ] IC [A] 480 400 320 40 30 240 20 160 10 80 0 5 6 7 8 9 VGE [V] 10 11 12 0 13 preparedby:MK dateofpublication:2013-11-11 approvedby:MK revision:2.0 7 0 100 200 300 400 IC [A] 500 600 700 800 技术信息/TechnicalInformation IGBT-模块 IGBT-modules F3L400R12PT4_B26 初步数据 PreliminaryData 开关损耗IGBT,T1/T4（典型) switchinglossesIGBT,T1/T4(typical) Eon=f(RG),Eoff=f(RG) VGE=±15V,IC=400A,VCE=300V 瞬态热阻抗IGBT,T1/T4 transientthermalimpedanceIGBT,T1/T4 ZthJC=f(t) 80 0,1 Eon, Tvj = 125°C Eon, Tvj = 150°C Eoff, Tvj = 125°C Eoff, Tvj = 150°C 70 ZthJC : IGBT 60 ZthJC [K/W] E [mJ] 50 40 0,01 30 20 i: 1 2 3 4 ri[K/W]: 0,00481 0,00743 0,05654 0,00346 τi[s]: 0,00048 0,00808 0,03994 4,14691 10 0 0 1 2 3 4 5 6 0,001 0,001 7 8 9 10 11 12 13 14 15 RG [Ω] 反偏安全工作区IGBT,T1/T4（RBSOA） reversebiassafeoperatingareaIGBT,T1/T4(RBSOA) IC=f(VCE) VGE=±15V,RGoff=1.5Ω,Tvj=150°C 0,01 0,1 t [s] 1 10 正向偏压特性二极管,D2/D3（典型) forwardcharacteristicofDiode,D2/D3(typical) IF=f(VF) 900 800 IC, Modul IC, Chip 800 720 Tvj = 25°C Tvj = 125°C Tvj = 150°C 640 700 560 600 IF [A] IC [A] 480 500 400 400 320 300 240 200 160 100 0 80 0 200 400 600 800 VCE [V] 1000 1200 0 1400 preparedby:MK dateofpublication:2013-11-11 approvedby:MK revision:2.0 8 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4 VF [V] 技术信息/TechnicalInformation IGBT-模块 IGBT-modules F3L400R12PT4_B26 初步数据 PreliminaryData 开关损耗二极管,D2/D3（典型) switchinglossesDiode,D2/D3(typical) Erec=f(IF) RGon=1.5Ω,VCE=300V 开关损耗二极管,D2/D3（典型) switchinglossesDiode,D2/D3(typical) Erec=f(RG) IF=400A,VCE=300V 10 10 Erec, Tvj = 125°C Erec, Tvj = 150°C 8 8 7 7 6 6 5 5 4 4 3 3 2 2 1 1 0 0 100 200 300 Erec, Tvj = 125°C Erec, Tvj = 150°C 9 E [mJ] E [mJ] 9 400 IF [A] 500 600 700 0 800 瞬态热阻抗二极管,D2/D3 transientthermalimpedanceDiode,D2/D3 ZthJC=f(t) 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 RG [Ω] 输出特性IGBT,T2/T3（典型) outputcharacteristicIGBT,T2/T3(typical) IC=f(VCE) VGE=15V 1 800 ZthJC : Diode Tvj = 25°C Tvj = 125°C Tvj = 150°C 720 640 560 IC [A] ZthJC [K/W] 480 0,1 400 320 240 160 i: 1 2 3 4 ri[K/W]: 0,02066 0,03561 0,14341 0,02234 τi[s]: 0,00031 0,0085 0,04141 0,9406 0,01 0,001 0,01 0,1 t [s] 1 80 0 10 preparedby:MK dateofpublication:2013-11-11 approvedby:MK revision:2.0 9 0,0 0,5 1,0 1,5 2,0 VCE [V] 2,5 3,0 3,5 4,0 技术信息/TechnicalInformation IGBT-模块 IGBT-modules F3L400R12PT4_B26 初步数据 PreliminaryData 输出特性IGBT,T2/T3（典型) outputcharacteristicIGBT,T2/T3(typical) IC=f(VCE) Tvj=150°C 传输特性IGBT,T2/T3(典型) transfercharacteristicIGBT,T2/T3(typical) IC=f(VGE) VCE=20V 800 800 VGE = 19V VGE = 17V VGE = 15V VGE = 13V VGE = 11V VGE = 9V 700 600 700 600 500 IC [A] IC [A] 500 400 300 200 200 100 100 0,0 0,5 1,0 1,5 2,0 2,5 3,0 VCE [V] 3,5 4,0 4,5 0 5,0 开关损耗IGBT,T2/T3（典型) switchinglossesIGBT,T2/T3(typical) Eon=f(IC),Eoff=f(IC) VGE=±15V,RGon=1.5Ω,RGoff=1.5Ω,VCE=300V 6 7 8 9 VGE [V] 10 11 12 13 100 Eon, Tvj = 125°C Eon, Tvj = 150°C Eoff, Tvj = 125°C Eoff, Tvj = 150°C 90 80 80 60 60 E [mJ] 70 50 50 40 40 30 30 20 20 10 10 0 100 200 300 Eon, Tvj = 125°C Eon, Tvj = 150°C Eoff, Tvj = 125°C Eoff, Tvj = 150°C 90 70 0 5 开关损耗IGBT,T2/T3（典型) switchinglossesIGBT,T2/T3(typical) Eon=f(RG),Eoff=f(RG) VGE=±15V,IC=400A,VCE=300V 100 E [mJ] 400 300 0 Tvj = 25°C Tvj = 125°C Tvj = 150°C 400 IC [A] 500 600 700 0 800 preparedby:MK dateofpublication:2013-11-11 approvedby:MK revision:2.0 10 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 RG [Ω] 技术信息/TechnicalInformation IGBT-模块 IGBT-modules F3L400R12PT4_B26 初步数据 PreliminaryData 瞬态热阻抗IGBT,T2/T3 transientthermalimpedanceIGBT,T2/T3 ZthJC=f(t) 反偏安全工作区IGBT,T2/T3（RBSOA） reversebiassafeoperatingareaIGBT,T2/T3(RBSOA) IC=f(VCE) VGE=±15V,RGoff=1.5Ω,Tvj=150°C 1 900 ZthJC : IGBT IC, Modul IC, Chip 800 700 600 IC [A] ZthJC [K/W] 0,1 0,01 500 400 300 200 i: 1 2 3 4 ri[K/W]: 0,01921 0,12312 0,02338 0,00837 τi[s]: 0,00113 0,03104 0,17309 3,25128 0,001 0,001 0,01 0,1 t [s] 1 100 0 10 正向偏压特性二极管,D1/D4（典型) forwardcharacteristicofDiode,D1/D4(typical) IF=f(VF) 100 200 300 400 VCE [V] 500 600 700 开关损耗二极管,D1/D4（典型) switchinglossesDiode,D1/D4(typical) Erec=f(IF) RGon=1.5Ω,VCE=300V 800 700 0 30 Tvj = 25°C Tvj = 125°C Tvj = 150°C Erec, Tvj = 125°C Erec, Tvj = 150°C 28 26 24 600 22 20 18 E [mJ] IF [A] 500 400 16 14 12 300 10 8 200 6 4 100 2 0 0 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4 2,6 VF [V] preparedby:MK dateofpublication:2013-11-11 approvedby:MK revision:2.0 11 0 100 200 300 400 IF [A] 500 600 700 800 技术信息/TechnicalInformation IGBT-模块 IGBT-modules F3L400R12PT4_B26 初步数据 PreliminaryData 开关损耗二极管,D1/D4（典型) switchinglossesDiode,D1/D4(typical) Erec=f(RG) IF=400A,VCE=300V 瞬态热阻抗二极管,D1/D4 transientthermalimpedanceDiode,D1/D4 ZthJC=f(t) 24 1 Erec, Tvj = 125°C Erec, Tvj = 150°C 22 ZthJC : Diode 20 18 16 ZthJC [K/W] E [mJ] 14 12 10 0,1 8 6 4 i: 1 2 3 4 ri[K/W]: 0,02046 0,10956 0,02205 0,00681 τi[s]: 0,00108 0,03036 0,16873 3,29829 2 0 0 1 2 3 4 5 6 0,01 0,001 7 8 9 10 11 12 13 14 15 RG [Ω] 负温度系数热敏电阻温度特性 NTC-Thermistor-temperaturecharacteristic(typical) R=f(T) 100000 Rtyp R[Ω] 10000 1000 100 0 20 40 60 80 100 TC [°C] 120 140 160 preparedby:MK dateofpublication:2013-11-11 approvedby:MK revision:2.0 12 0,01 0,1 t [s] 1 10 技术信息/TechnicalInformation IGBT-模块 IGBT-modules F3L400R12PT4_B26 初步数据 PreliminaryData 接线图/circuit_diagram_headline J 封装尺寸/packageoutlines preparedby:MK dateofpublication:2013-11-11 approvedby:MK revision:2.0 13 技术信息/TechnicalInformation IGBT-模块 IGBT-modules F3L400R12PT4_B26 初步数据 PreliminaryData 使用条件和条款 使用条件和条款 产品规格书中的数据是专门为技术人员提供的，您和您的技术部门应该针对您的应用来评估产品及产品的所有参数是否适合 产品规格书中所描述的产品特性是被保证的，任何这种保证严格依照供货协议中所涉及的条件和条款。除此之外，产品和产品的特性没有任何的保证 请注意安装及应用指南中的信息。 如果您有超出规格书所提供的产品信息的要求或者对我们的产品针对的特殊应用有疑虑的话，请联系我们负责你的销售部门（详情查询 www.infineon.com）。对那些特别感兴趣的问题我们将提供相应的应用手册 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