技术信息/TechnicalInformation IGBT-模块 IGBT-Module F3L200R12W2H3_B11 EasyPACK模块采用第二类中点钳位拓扑(NPC2)带有pressfit压接管脚和温度检测NTC EasyPACKmodulewithactive"NeutralPointClamp2"topologyandPressFIT/NTC VCES = 1200V IC nom = 100A / ICRM = 200A 典型应用 • 三电平应用 • 电机传动 • 太阳能应用 • UPS系统 TypicalApplications • 3-Level-Applications • MotorDrives • SolarApplications • UPSSystems 电气特性 • 高速IGBTH3 • 低开关损耗 • Tvjop=150°C ElectricalFeatures • HighSpeedIGBTH3 • LowSwitchingLosses • Tvjop=150°C 机械特性 • PressFIT压接技术 • 符合RoHS MechanicalFeatures • PressFITContactTechnology • RoHScompliant ModuleLabelCode BarcodeCode128 DMX-Code preparedby:CM dateofpublication:2014-12-04 approvedby:AKDA revision:3.0 ContentoftheCode Digit ModuleSerialNumber ModuleMaterialNumber ProductionOrderNumber Datecode(ProductionYear) Datecode(ProductionWeek) 1-5 6-11 12-19 20-21 22-23 ULapproved(E83335) 1 技术信息/TechnicalInformation IGBT-模块 IGBT-Module F3L200R12W2H3_B11 IGBT,T1/T4/IGBT,T1/T4 最大额定值/MaximumRatedValues 集电极－发射极电压 Collector-emittervoltage Tvj = 25°C 集电极电流 Implementedcollectorcurrent VCES 1200 V ICN 200 A 连续集电极直流电流 ContinuousDCcollectorcurrent TC = 100°C, Tvj max = 175°C IC nom 100 A 集电极重复峰值电流 Repetitivepeakcollectorcurrent tP = 1 ms ICRM 400 A 总功率损耗 Totalpowerdissipation TC = 25°C, Tvj max = 175°C Ptot 600 W VGES +/-20 V 栅极－发射极峰值电压 Gate-emitterpeakvoltage 特征值/CharacteristicValues 集电极－发射极饱和电压 Collector-emittersaturationvoltage min. IC = 100 A, VGE = 15 V IC = 100 A, VGE = 15 V IC = 100 A, VGE = 15 V Tvj = 25°C Tvj = 125°C Tvj = 150°C VCE sat typ. max. 1,55 1,70 1,75 1,75 V V V 5,80 6,45 V 栅极阈值电压 Gatethresholdvoltage IC = 7,60 mA, VCE = VGE, Tvj = 25°C 栅极电荷 Gatecharge VGE = -15 V ... +15 V QG 1,60 µC 内部栅极电阻 Internalgateresistor Tvj = 25°C RGint 3,8 Ω 输入电容 Inputcapacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Cies 11,5 nF 反向传输电容 Reversetransfercapacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Cres 0,70 nF 集电极-发射极截止电流 Collector-emittercut-offcurrent VCE = 1200 V, VGE = 0 V, Tvj = 25°C ICES 1,0 mA 栅极-发射极漏电流 Gate-emitterleakagecurrent VCE = 0 V, VGE = 20 V, Tvj = 25°C IGES 100 nA VGEth 开通延迟时间(电感负载) Turn-ondelaytime,inductiveload IC = 100 A, VCE = 400 V VGE = ±15 V RGon = 1,1 Ω Tvj = 25°C Tvj = 125°C Tvj = 150°C 上升时间(电感负载) Risetime,inductiveload IC = 100 A, VCE = 400 V VGE = ±15 V RGon = 1,1 Ω Tvj = 25°C Tvj = 125°C Tvj = 150°C 关断延迟时间(电感负载) Turn-offdelaytime,inductiveload IC = 100 A, VCE = 400 V VGE = ±15 V RGoff = 1,1 Ω Tvj = 25°C Tvj = 125°C Tvj = 150°C 下降时间(电感负载) Falltime,inductiveload IC = 100 A, VCE = 400 V VGE = ±15 V RGoff = 1,1 Ω Tvj = 25°C Tvj = 125°C Tvj = 150°C 开通损耗能量(每脉冲) Turn-onenergylossperpulse IC = 100 A, VCE = 400 V, LS = 25 nH Tvj = 25°C VGE = ±15 V, di/dt = 3700 A/µs (Tvj = 150°C) Tvj = 125°C RGon = 1,1 Ω Tvj = 150°C 关断损耗能量(每脉冲） Turn-offenergylossperpulse 5,05 0,14 0,155 0,16 µs µs µs 0,025 0,03 0,03 µs µs µs 0,32 0,40 0,42 µs µs µs 0,03 0,055 0,06 µs µs µs Eon 1,20 2,00 2,25 mJ mJ mJ IC = 100 A, VCE = 400 V, LS = 25 nH Tvj = 25°C VGE = ±15 V, du/dt = 2700 V/µs (Tvj = 150°C) Tvj = 125°C RGoff = 1,1 Ω Tvj = 150°C Eoff 3,50 5,30 5,90 mJ mJ mJ 短路数据 SCdata VGE ≤ 15 V, VCC = 800 V VCEmax = VCES -LsCE ·di/dt ISC 800 A 结－外壳热阻 Thermalresistance,junctiontocase 每个IGBT/perIGBT preparedby:CM dateofpublication:2014-12-04 approvedby:AKDA revision:3.0 tP ≤ 10 µs, Tvj = 150°C td on tr td off tf RthJC 2 0,20 0,25 K/W 技术信息/TechnicalInformation IGBT-模块 IGBT-Module F3L200R12W2H3_B11 外壳－散热器热阻 Thermalresistance,casetoheatsink 每个IGBT/perIGBT λPaste=1W/(m·K)/λgrease=1W/(m·K) RthCH 在开关状态下温度 Temperatureunderswitchingconditions 0,20 Tvj op -40 K/W 150 °C 二极管,D2/D3/Diode,D2/D3 最大额定值/MaximumRatedValues 反向重复峰值电压 Repetitivepeakreversevoltage Tvj = 25°C VRRM 650 V 正向电流 Implementedforwardcurrent IFN 125 A 连续正向直流电流 ContinuousDCforwardcurrent IF 100 A IFRM 250 A I²t 1450 1400 正向重复峰值电流 Repetitivepeakforwardcurrent tP = 1 ms I2t-值 I²t-value VR = 0 V, tP = 10 ms, Tvj = 125°C VR = 0 V, tP = 10 ms, Tvj = 150°C 特征值/CharacteristicValues min. A²s A²s typ. max. 1,70 VF 1,55 1,50 1,45 IF = 100 A, - diF/dt = 3700 A/µs (Tvj=150°C) Tvj = 25°C VR = 400 V Tvj = 125°C VGE = -15 V Tvj = 150°C IRM 90,0 100 100 A A A 恢复电荷 Recoveredcharge IF = 100 A, - diF/dt = 3700 A/µs (Tvj=150°C) Tvj = 25°C VR = 400 V Tvj = 125°C VGE = -15 V Tvj = 150°C Qr 3,25 5,90 6,40 µC µC µC 反向恢复损耗（每脉冲） Reverserecoveryenergy IF = 100 A, - diF/dt = 3700 A/µs (Tvj=150°C) Tvj = 25°C VR = 400 V Tvj = 125°C VGE = -15 V Tvj = 150°C Erec 0,95 1,55 1,65 mJ mJ mJ 结－外壳热阻 Thermalresistance,junctiontocase 每个二极管/perdiode RthJC 0,55 0,65 K/W 外壳－散热器热阻 Thermalresistance,casetoheatsink 每个二极管/perdiode λPaste=1W/(m·K)/λgrease=1W/(m·K) RthCH 0,60 K/W 正向电压 Forwardvoltage IF = 100 A, VGE = 0 V IF = 100 A, VGE = 0 V IF = 100 A, VGE = 0 V Tvj = 25°C Tvj = 125°C Tvj = 150°C 反向恢复峰值电流 Peakreverserecoverycurrent 在开关状态下温度 Temperatureunderswitchingconditions Tvj op preparedby:CM dateofpublication:2014-12-04 approvedby:AKDA revision:3.0 3 -40 150 V V V °C 技术信息/TechnicalInformation IGBT-模块 IGBT-Module F3L200R12W2H3_B11 IGBT,T2/T3/IGBT,T2/T3 最大额定值/MaximumRatedValues 集电极－发射极电压 Collector-emittervoltage Tvj = 25°C VCES 650 V 连续集电极直流电流 ContinuousDCcollectorcurrent TC = 100°C, Tvj max = 175°C IC nom 100 A 集电极重复峰值电流 Repetitivepeakcollectorcurrent tP = 1 ms ICRM 200 A 总功率损耗 Totalpowerdissipation TC = 25°C, Tvj max = 175°C Ptot 250 W VGES +/-20 V 栅极－发射极峰值电压 Gate-emitterpeakvoltage 特征值/CharacteristicValues 集电极－发射极饱和电压 Collector-emittersaturationvoltage min. IC = 100 A, VGE = 15 V IC = 100 A, VGE = 15 V IC = 100 A, VGE = 15 V Tvj = 25°C Tvj = 125°C Tvj = 150°C VCE sat typ. max. 1,45 1,60 1,70 1,90 V V V 5,80 6,45 V 栅极阈值电压 Gatethresholdvoltage IC = 1,60 mA, VCE = VGE, Tvj = 25°C 栅极电荷 Gatecharge VGE = -15 V ... +15 V QG 1,00 µC 内部栅极电阻 Internalgateresistor Tvj = 25°C RGint 2,0 Ω 输入电容 Inputcapacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Cies 6,20 nF 反向传输电容 Reversetransfercapacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Cres 0,19 nF 集电极-发射极截止电流 Collector-emittercut-offcurrent VCE = 650 V, VGE = 0 V, Tvj = 25°C ICES 1,0 mA 栅极-发射极漏电流 Gate-emitterleakagecurrent VCE = 0 V, VGE = 20 V, Tvj = 25°C IGES 100 nA VGEth 开通延迟时间(电感负载) Turn-ondelaytime,inductiveload IC = 100 A, VCE = 400 V VGE = ±15 V RGon = 3,3 Ω Tvj = 25°C Tvj = 125°C Tvj = 150°C 上升时间(电感负载) Risetime,inductiveload IC = 100 A, VCE = 400 V VGE = ±15 V RGon = 3,3 Ω Tvj = 25°C Tvj = 125°C Tvj = 150°C 关断延迟时间(电感负载) Turn-offdelaytime,inductiveload IC = 100 A, VCE = 400 V VGE = ±15 V RGoff = 3,3 Ω Tvj = 25°C Tvj = 125°C Tvj = 150°C 下降时间(电感负载) Falltime,inductiveload IC = 100 A, VCE = 400 V VGE = ±15 V RGoff = 3,3 Ω Tvj = 25°C Tvj = 125°C Tvj = 150°C 开通损耗能量(每脉冲) Turn-onenergylossperpulse IC = 100 A, VCE = 400 V, LS = 25 nH Tvj = 25°C VGE = ±15 V, di/dt = 3800 A/µs (Tvj = 150°C) Tvj = 125°C RGon = 3,3 Ω Tvj = 150°C 关断损耗能量(每脉冲） Turn-offenergylossperpulse 4,95 0,055 0,06 0,065 µs µs µs 0,025 0,03 0,03 µs µs µs 0,25 0,27 0,28 µs µs µs 0,035 0,05 0,06 µs µs µs Eon 1,85 2,80 3,30 mJ mJ mJ IC = 100 A, VCE = 400 V, LS = 25 nH Tvj = 25°C VGE = ±15 V, du/dt = 4600 V/µs (Tvj = 150°C) Tvj = 125°C RGoff = 3,3 Ω Tvj = 150°C Eoff 3,10 4,10 4,60 mJ mJ mJ 短路数据 SCdata VGE ≤ 15 V, VCC = 360 V VCEmax = VCES -LsCE ·di/dt ISC 700 500 A A 结－外壳热阻 Thermalresistance,junctiontocase 每个IGBT/perIGBT RthJC 0,50 0,60 K/W 外壳－散热器热阻 Thermalresistance,casetoheatsink 每个IGBT/perIGBT λPaste=1W/(m·K)/λgrease=1W/(m·K) RthCH 0,50 K/W 在开关状态下温度 Temperatureunderswitchingconditions tP ≤ 8 µs, Tvj = 25°C tP ≤ 6 µs, Tvj = 150°C td on tr td off tf Tvj op preparedby:CM dateofpublication:2014-12-04 approvedby:AKDA revision:3.0 4 -40 150 °C 技术信息/TechnicalInformation IGBT-模块 IGBT-Module F3L200R12W2H3_B11 二极管,D1/D4/Diode,D1/D4 最大额定值/MaximumRatedValues 反向重复峰值电压 Repetitivepeakreversevoltage VRRM Tvj = 25°C 连续正向直流电流 ContinuousDCforwardcurrent 正向重复峰值电流 Repetitivepeakforwardcurrent tP = 1 ms I2t-值 I²t-value VR = 0 V, tP = 10 ms, Tvj = 125°C VR = 0 V, tP = 10 ms, Tvj = 150°C 1200 V IF 75 A IFRM 150 A I²t 1050 985 特征值/CharacteristicValues min. A²s A²s typ. max. 2,15 VF 1,65 1,65 1,65 Tvj = 25°C Tvj = 125°C Tvj = 150°C IRM 120 140 150 A A A IF = 75 A, - diF/dt = 3500 A/µs (Tvj=150°C) VR = 400 V VGE = -15 V Tvj = 25°C Tvj = 125°C Tvj = 150°C Qr 8,50 17,0 19,0 µC µC µC IF = 75 A, - diF/dt = 3500 A/µs (Tvj=150°C) VR = 400 V VGE = -15 V Tvj = 25°C Tvj = 125°C Tvj = 150°C Erec 2,85 5,70 6,30 mJ mJ mJ 正向电压 Forwardvoltage IF = 75 A, VGE = 0 V IF = 75 A, VGE = 0 V IF = 75 A, VGE = 0 V Tvj = 25°C Tvj = 125°C Tvj = 150°C 反向恢复峰值电流 Peakreverserecoverycurrent IF = 75 A, - diF/dt = 3500 A/µs (Tvj=150°C) VR = 400 V VGE = -15 V 恢复电荷 Recoveredcharge 反向恢复损耗（每脉冲） Reverserecoveryenergy V V V 结－外壳热阻 Thermalresistance,junctiontocase 每个二极管/perdiode RthJC 0,55 0,60 K/W 外壳－散热器热阻 Thermalresistance,casetoheatsink 每个二极管/perdiode λPaste=1W/(m·K)/λgrease=1W/(m·K) RthCH 0,50 K/W 在开关状态下温度 Temperatureunderswitchingconditions Tvj op -40 150 °C 模块/Module 绝缘测试电压 Isolationtestvoltage RMS, f = 50 Hz, t = 1 min. 内部绝缘 Internalisolation 基本绝缘(class1,IEC61140) basicinsulation(class1,IEC61140) Al2O3 爬电距离 Creepagedistance 端子至散热器/terminaltoheatsink 端子至端子/terminaltoterminal 11,5 6,3 mm 电气间隙 Clearance 端子至散热器/terminaltoheatsink 端子至端子/terminaltoterminal 10,0 5,0 mm > 200 相对电痕指数 Comperativetrackingindex VISOL CTI min. 杂散电感,模块 Strayinductancemodule LsCE 储存温度 Storagetemperature Tstg -40 Anpresskraft für mech. Bef. pro Feder mountig force per clamp F 40 重量 Weight G Der Strom im Dauerbetrieb ist auf 25A effektiv pro Anschlusspin begrenzt. The current under continuous operation is limited to 25A rms per connector pin. preparedby:CM dateofpublication:2014-12-04 approvedby:AKDA revision:3.0 5 kV 2,5 typ. max. 14 36 nH 125 °C 80 N g 技术信息/TechnicalInformation IGBT-模块 IGBT-Module F3L200R12W2H3_B11 负温度系数热敏电阻/NTC-Thermistor 特征值/CharacteristicValues min. typ. max. 额定电阻值 Ratedresistance TC = 25°C R100偏差 DeviationofR100 TC = 100°C, R100 = 493 Ω 耗散功率 Powerdissipation TC = 25°C B-值 B-value R2 = R25 exp [B25/50(1/T2 - 1/(298,15 K))] B25/50 3375 K B-值 B-value R2 = R25 exp [B25/80(1/T2 - 1/(298,15 K))] B25/80 3411 K B-值 B-value R2 = R25 exp [B25/100(1/T2 - 1/(298,15 K))] B25/100 3433 K R25 ∆R/R 5,00 -5 P25 根据应用手册标定 Specificationaccordingtothevalidapplicationnote. preparedby:CM dateofpublication:2014-12-04 approvedby:AKDA revision:3.0 6 kΩ 5 % 20,0 mW 技术信息/TechnicalInformation IGBT-模块 IGBT-Module F3L200R12W2H3_B11 输出特性IGBT,T1/T4（典型) outputcharacteristicIGBT,T1/T4(typical) IC=f(VCE) VGE=15V 输出特性IGBT,T1/T4（典型) outputcharacteristicIGBT,T1/T4(typical) IC=f(VCE) Tvj=150°C 200 200 Tvj = 25°C Tvj = 125°C Tvj = 150°C 160 160 140 140 120 120 100 80 60 60 40 40 20 20 0,0 0,5 1,0 1,5 VCE [V] 2,0 2,5 0 3,0 传输特性IGBT,T1/T4(典型) transfercharacteristicIGBT,T1/T4(typical) IC=f(VGE) VCE=20V 0,5 1,0 1,5 2,0 2,5 3,0 VCE [V] 3,5 4,0 4,5 5,0 11 Tvj = 25°C Tvj = 125°C Tvj = 150°C 180 Eon, Tvj = 125°C Eoff, Tvj = 125°C Eon, Tvj = 150°C Eoff, Tvj = 150°C 10 9 160 8 140 7 E [mJ] 120 100 80 6 5 4 60 3 40 2 20 0 0,0 开关损耗IGBT,T1/T4（典型) switchinglossesIGBT,T1/T4(typical) Eon=f(IC),Eoff=f(IC) VGE=±15V,RGon=1.1Ω,RGoff=1.1Ω,VCE=400V 200 IC [A] 100 80 0 VGE = 19V VGE = 17V VGE = 15V VGE = 13V VGE = 11V VGE = 9V 180 IC [A] IC [A] 180 1 5 6 7 8 9 VGE [V] 10 11 0 12 preparedby:CM dateofpublication:2014-12-04 approvedby:AKDA revision:3.0 7 0 20 40 60 80 100 120 140 160 180 200 IC [A] 技术信息/TechnicalInformation IGBT-模块 IGBT-Module F3L200R12W2H3_B11 开关损耗IGBT,T1/T4（典型) switchinglossesIGBT,T1/T4(typical) Eon=f(RG),Eoff=f(RG) VGE=±15V,IC=100A,VCE=400V 瞬态热阻抗IGBT,T1/T4 transientthermalimpedanceIGBT,T1/T4 ZthJH=f(t) 8 1 Eon, Tvj = 125°C Eoff, Tvj = 125°C Eon, Tvj = 150°C Eoff, Tvj = 150°C 7 ZthJH : IGBT 6 0,1 ZthJH [K/W] E [mJ] 5 4 3 0,01 2 i: 1 2 3 4 ri[K/W]: 0,012 0,044 0,032 0,312 τi[s]: 0,0005 0,005 0,05 0,2 1 0 0 1 2 3 4 5 6 RG [Ω] 7 8 9 0,001 0,001 10 反偏安全工作区IGBT,T1/T4（RBSOA） reversebiassafeoperatingareaIGBT,T1/T4(RBSOA) IC=f(VCE) VGE=±15V,RGoff=1.1Ω,Tvj=150°C 0,01 0,1 t [s] 1 10 正向偏压特性二极管,D2/D3（典型) forwardcharacteristicofDiode,D2/D3(typical) IF=f(VF) 250 200 IC, Modul IC, Chip Tvj = 25°C Tvj = 125°C Tvj = 150°C 180 200 160 140 120 IF [A] IC [A] 150 100 100 80 60 50 40 20 0 0 200 400 600 800 VCE [V] 1000 1200 0 1400 preparedby:CM dateofpublication:2014-12-04 approvedby:AKDA revision:3.0 8 0,0 0,2 0,4 0,6 0,8 1,0 1,2 VF [V] 1,4 1,6 1,8 2,0 技术信息/TechnicalInformation IGBT-模块 IGBT-Module F3L200R12W2H3_B11 开关损耗二极管,D2/D3（典型) switchinglossesDiode,D2/D3(typical) Erec=f(IF) RGon=1.1Ω,VCE=400V 开关损耗二极管,D2/D3（典型) switchinglossesDiode,D2/D3(typical) Erec=f(RG) IF=100A,VCE=400V 2,6 2,0 Erec, Tvj = 125°C Erec, Tvj = 150°C 2,4 Erec, Tvj = 125°C Erec, Tvj = 150°C 1,8 2,2 1,6 1,8 1,4 1,6 1,2 1,4 E [mJ] E [mJ] 2,0 1,2 1,0 1,0 0,8 0,8 0,6 0,6 0,4 0,4 0,2 0,2 0,0 0 20 40 60 80 0,0 100 120 140 160 180 200 IF [A] 瞬态热阻抗二极管,D2/D3 transientthermalimpedanceDiode,D2/D3 ZthJH=f(t) 0 1 2 3 4 5 6 RG [Ω] 7 8 9 10 输出特性IGBT,T2/T3（典型) outputcharacteristicIGBT,T2/T3(typical) IC=f(VCE) VGE=15V 10 200 ZthJH : Diode Tvj = 25°C Tvj = 125°C Tvj = 150°C 180 160 140 1 IC [A] ZthJH [K/W] 120 100 80 0,1 60 40 i: 1 2 3 4 ri[K/W]: 0,035 0,149 0,311 0,655 τi[s]: 0,0005 0,005 0,05 0,2 0,01 0,001 0,01 0,1 t [s] 1 20 0 10 preparedby:CM dateofpublication:2014-12-04 approvedby:AKDA revision:3.0 9 0,0 0,5 1,0 1,5 VCE [V] 2,0 2,5 3,0 技术信息/TechnicalInformation IGBT-模块 IGBT-Module F3L200R12W2H3_B11 输出特性IGBT,T2/T3（典型) outputcharacteristicIGBT,T2/T3(typical) IC=f(VCE) Tvj=150°C 传输特性IGBT,T2/T3(典型) transfercharacteristicIGBT,T2/T3(typical) IC=f(VGE) VCE=20V 200 200 VGE = 19V VGE = 17V VGE = 15V VGE = 13V VGE = 11V VGE = 9V 180 160 140 140 120 120 IC [A] IC [A] 160 100 100 80 80 60 60 40 40 20 20 0 0,0 0,5 1,0 1,5 Tvj = 25°C Tvj = 125°C Tvj = 150°C 180 2,0 2,5 3,0 VCE [V] 3,5 4,0 4,5 0 5,0 开关损耗IGBT,T2/T3（典型) switchinglossesIGBT,T2/T3(typical) Eon=f(IC),Eoff=f(IC) VGE=±15V,RGon=3.3Ω,RGoff=3.3Ω,VCE=400V 5 6 7 8 9 VGE [V] 10 11 12 开关损耗IGBT,T2/T3（典型) switchinglossesIGBT,T2/T3(typical) Eon=f(RG),Eoff=f(RG) VGE=±15V,IC=100A,VCE=400V 10 24 Eon, Tvj = 125°C Eoff, Tvj = 125°C Eon, Tvj = 150°C Eoff, Tvj = 150°C 9 8 Eon, Tvj = 125°C Eoff, Tvj = 125°C Eon, Tvj = 150°C Eoff, Tvj = 150°C 22 20 18 7 16 14 E [mJ] E [mJ] 6 5 12 10 4 8 3 6 2 4 1 0 2 0 20 40 60 80 0 100 120 140 160 180 200 IC [A] preparedby:CM dateofpublication:2014-12-04 approvedby:AKDA revision:3.0 10 0 3 6 9 12 15 18 RG [Ω] 21 24 27 30 技术信息/TechnicalInformation IGBT-模块 IGBT-Module F3L200R12W2H3_B11 瞬态热阻抗IGBT,T2/T3 transientthermalimpedanceIGBT,T2/T3 ZthJH=f(t) 反偏安全工作区IGBT,T2/T3（RBSOA） reversebiassafeoperatingareaIGBT,T2/T3(RBSOA) IC=f(VCE) VGE=±15V,RGoff=3.3Ω,Tvj=150°C 10 220 ZthJH : IGBT IC, Modul IC, Chip 200 180 160 1 IC [A] ZthJH [K/W] 140 120 100 80 0,1 60 40 i: 1 2 3 4 ri[K/W]: 0,03 0,11 0,08 0,78 τi[s]: 0,0005 0,005 0,05 0,2 0,01 0,001 0,01 0,1 t [s] 1 20 0 10 正向偏压特性二极管,D1/D4（典型) forwardcharacteristicofDiode,D1/D4(typical) IF=f(VF) 300 400 500 VCE [V] 600 700 800 Erec, Tvj = 125°C Erec, Tvj = 150°C 9 8 105 7 90 6 E [mJ] IF [A] 200 10 Tvj = 25°C Tvj = 125°C Tvj = 150°C 120 75 5 60 4 45 3 30 2 15 1 0 100 开关损耗二极管,D1/D4（典型) switchinglossesDiode,D1/D4(typical) Erec=f(IF) RGon=3.3Ω,VCE=400V 150 135 0 0 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4 VF [V] preparedby:CM dateofpublication:2014-12-04 approvedby:AKDA revision:3.0 11 0 15 30 45 60 75 90 IF [A] 105 120 135 150 技术信息/TechnicalInformation IGBT-模块 IGBT-Module F3L200R12W2H3_B11 开关损耗二极管,D1/D4（典型) switchinglossesDiode,D1/D4(typical) Erec=f(RG) IF=75A,VCE=400V 瞬态热阻抗二极管,D1/D4 transientthermalimpedanceDiode,D1/D4 ZthJH=f(t) 8 10 Erec, Tvj = 125°C Erec, Tvj = 150°C 7 ZthJH : Diode 6 1 ZthJH [K/W] E [mJ] 5 4 3 0,1 2 i: 1 2 3 4 ri[K/W]: 0,042 0,093 0,387 0,528 τi[s]: 0,0005 0,005 0,05 0,2 1 0 0 3 6 9 12 15 18 RG [Ω] 21 24 27 0,01 0,001 30 负温度系数热敏电阻温度特性 NTC-Thermistor-temperaturecharacteristic(typical) R=f(T) 100000 Rtyp R[Ω] 10000 1000 100 0 20 40 60 80 100 TC [°C] 120 140 160 preparedby:CM dateofpublication:2014-12-04 approvedby:AKDA revision:3.0 12 0,01 0,1 t [s] 1 10 技术信息/TechnicalInformation IGBT-模块 IGBT-Module F3L200R12W2H3_B11 接线图/circuit_diagram_headline 封装尺寸/packageoutlines Infineon preparedby:CM dateofpublication:2014-12-04 approvedby:AKDA revision:3.0 13 技术信息/TechnicalInformation IGBT-模块 IGBT-Module F3L200R12W2H3_B11 使用条件和条款 使用条件和条款 产品规格书中的数据是专门为技术人员提供的，您和您的技术部门应该针对您的应用来评估产品及产品的所有参数是否适合 产品规格书中所描述的产品特性是被保证的，任何这种保证严格依照供货协议中所涉及的条件和条款。除此之外，产品和产品的特性没有任何的保证 请注意安装及应用指南中的信息。 如果您有超出规格书所提供的产品信息的要求或者对我们的产品针对的特殊应用有疑虑的话，请联系我们负责你的销售部门（详情查询 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ShouldyouintendtousetheProductinaviationapplications,inhealthorliveendangeringorlifesupportapplications,pleasenotify.Please note,thatforanysuchapplicationsweurgentlyrecommend -toperformjointRiskandQualityAssessments; -theconclusionofQualityAgreements; -toestablishjointmeasuresofanongoingproductsurvey,andthatwemaymakedeliverydependedon therealizationofanysuchmeasures. Ifandtotheextentnecessary,pleaseforwardequivalentnoticestoyourcustomers. Changesofthisproductdatasheetarereserved. preparedby:CM dateofpublication:2014-12-04 approvedby:AKDA revision:3.0 14