AOS Semiconductor Product Reliability Report AON6236, rev A Plastic Encapsulated Device ALPHA & OMEGA Semiconductor, Inc www.aosmd.com This AOS product reliability report summarizes the qualification result for AON6236. Accelerated environmental tests are performed on a specific sample size, and then followed by electrical test at end point. Review of final electrical test result confirms that AON6236 passes AOS quality and reliability requirements. The released product will be categorized by the process family and be monitored on a quarterly basis for continuously improving the product quality. Table of Contents: I. II. III. IV. Product Description Package and Die information Environmental Stress Test Summary and Result Reliability Evaluation I. Product Description: The AON6236 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Power losses are minimized due to an extremely low combination of RDS(ON) and Crss. In addition, switching behavior is well controlled with a "Schottky style" soft recovery body diode. -RoHS and Halogen-Free Compliant Detailed information refers to datasheet. II. Die / Package Information: AON6236 Standard sub-micron Low voltage N channel Package Type DFN 5x6 Lead Frame Cu Die Attach Ag epoxy Bonding Wire Cu wire Mold Material Epoxy resin with silica filler MSL (moisture sensitive level) Level 1 based on J-STD-020 Process Note * based on information provided by assembler and mold compound supplier III. Result of Reliability Stress for AON6236 Test Item Test Condition Time Point MSL Precondition 168hr 85°c /85%RH +3 cycle reflow@260°c - HTGB Temp = 150 °c, Vgs=100% of Vgsmax 168hrs 500 hrs 1000 hrs Temp = 150 °c, Vds=80% of Vdsmax 168hrs 500 hrs 1000 hrs 130 +/- 2°°c, 85%RH, 33.3 psi, Vgs = 100% of Vgs max 121°°c, 29.7psi, RH=100% 100 hrs 96 hrs -65°°c to 150°°c, air to air 250 / 500 cycles HTRB HAST Pressure Pot Temperature Cycle Lot Attribution Total Sample size Number of Failures Standard 11 lots 1815pcs 0 JESD22A113 1 lot 308pcs 0 JESD22A108 77pcs / lot 308pcs 0 JESD22A108 (Note A*) 11 lots 77pcs / lot 605pcs 0 JESD22A110 (Note A*) 11 lots 55pcs / lot 605pcs 0 JESD22A102 (Note A*) 11 lots 55pcs / lot 605pcs 0 JESD22A104 (Note A*) 55pcs / lot 3 lots (Note A*) 1 lot 3 lots Note A: The reliability data presents total of available generic data up to the published date. IV. Reliability Evaluation FIT rate (per billion): 7 MTTF = 15704 years The presentation of FIT rate for the individual product reliability is restricted by the actual burn-in sample size of the selected product (AON6236). Failure Rate Determination is based on JEDEC Standard JESD 85. FIT means one failure per billion hours. 2 9 Failure Rate = Chi x 10 / [2 (N) (H) (Af)] 9 = 1.83 x 10 / [2x (2x77x168+2x3x77x1000) x258] = 7 9 8 MTTF = 10 / FIT = 1.38 x 10 hrs = 15704 years Chi² = Chi Squared Distribution, determined by the number of failures and confidence interval N = Total Number of units from HTRB and HTGB tests H = Duration of HTRB/HTGB testing Af = Acceleration Factor from Test to Use Conditions (Ea = 0.7eV and Tuse = 55°C) Acceleration Factor [Af] = Exp [Ea / k (1/Tj u – 1/Tj s)] Acceleration Factor ratio list: Af 55 deg C 70 deg C 85 deg C 100 deg C 115 deg C 130 deg C 150 deg C 258 87 32 13 5.64 2.59 1 Tj s = Stressed junction temperature in degree (Kelvin), K = C+273.16 Tj u = The use junction temperature in degree (Kelvin), K = C+273.16 -5 K = Boltzmann’s constant, 8.617164 X 10 eV / K