AON6236 40V N-Channel MOSFET General Descrion The AON6236 uses trench MOSFET technology that is uniquely optimized to provide the most efficient hi gh frequency switching performance.Power losses are minimized due to an extremely low combination of RDS(ON) and Crss.In addition,switching behavior is well controlled with a "Schottky style" soft recovery bo dy diode. Product Summary VDS ID (at VGS=10V) 40V 30A RDS(ON) (at VGS=10V) < 7mΩ RDS(ON) (at VGS = 4.5V) < 10.5mΩ 100% UIS Tested 100% Rg Tested D Top View 1 8 2 7 3 6 4 5 G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current G Pulsed Drain Current C Avalanche Current C Avalanche energy L=0.1mH C TC=25°C Power Dissipation B TA=25°C Power Dissipation A Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case 1/6 IAS 33 A EAS 54 mJ 39 Steady-State Steady-State W 15.5 4.2 RθJA RθJC W 2.7 TJ, TSTG Symbol t ≤ 10s A 15 PDSM TA=70°C A 19 PD TC=100°C V 120 IDSM TA=70°C ±20 24 IDM TA=25°C Continuous Drain Current Units V 30 ID TC=100°C Maximum 40 -55 to 150 Typ 24 53 2.6 °C Max 30 64 3.2 Units °C/W °C/W °C/W www.freescale.net.cn AON6236 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Min Conditions ID=250µA, VGS=0V IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250µA 1.4 ID(ON) On state drain current VGS=10V, VDS=5V 120 TJ=55°C nA 2.4 V 5.6 7 8.4 10.5 VGS=4.5V, ID=20A 8 10.5 mΩ 80 1 V 30 A TJ=125°C gFS Forward Transconductance VDS=5V, ID=20A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current G DYNAMIC PARAMETERS Ciss Input Capacitance Reverse Transfer Capacitance Rg Gate resistance µA ±100 Static Drain-Source On-Resistance Crss 5 1.85 VGS=10V, ID=20A Output Capacitance Units V 1 Zero Gate Voltage Drain Current Coss Max 40 VDS=40V, VGS=0V IDSS RDS(ON) Typ VGS=0V, VDS=20V, f=1MHz A 0.72 mΩ S 1225 pF 318 pF 26.5 pF 1.7 3.0 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 18.5 26 nC Qg(4.5V) Total Gate Charge 8.2 12 nC Qgs Gate Source Charge Qgd Gate Drain Charge VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=20V, ID=20A tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs VGS=10V, VDS=20V, RL=1Ω, RGEN=3Ω IF=20A, dI/dt=500A/µs 3.5 nC 2.5 nC 6 ns 2.8 ns 23.5 ns 3 ns 14 ns nC 32.5 A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 2/6 www.freescale.net.cn AON6236 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 100 10V VDS=5V 4.5V 80 80 4.0V 6V 60 3.5V 40 125°C ID(A) ID (A) 60 40 25°C 20 20 VGS=3.0V 0 0 0 1 2 3 4 1 5 12 3 4 5 6 Normalized On-Resistance 1.8 10 VGS=4.5V RDS(ON) (mΩ Ω) 2 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) 8 6 VGS=10V 4 1.6 VGS=10V ID=20A 1.4 17 5 2 VGS=4.5V 10 1.2 ID=20A 1 0.8 2 0 5 0 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 0 Temperature (°C) Figure 4: On-Resistance vs. Junction 18Temperature (Note E) 20 1.0E+02 ID=20A 1.0E+01 40 1.0E+00 125°C IS (A) RDS(ON) (mΩ Ω) 15 10 125°C 1.0E-01 1.0E-02 25°C 1.0E-03 5 1.0E-04 25°C 1.0E-05 0 0.0 2 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) 3/6 0.2 0.4 0.6 0.8 1.0 1.2 4 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) www.freescale.net.cn AON6236 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 1600 VDS=20V ID=20A 1400 Ciss 8 Capacitance (pF) VGS (Volts) 1200 6 4 1000 800 Coss 600 400 2 Crss 200 0 0 0 5 10 15 Qg (nC) Figure 7: Gate-Charge Characteristics 20 0 10 15 20 25 30 35 VDS (Volts) Figure 8: Capacitance Characteristics 40 200 1000.0 RDS(ON) 10.0 100µs 1.0 1ms 10ms DC TJ(Max)=150°C TC=25°C 0.1 TJ(Max)=150°C TC=25°C 160 10µs Power (W) 10µs 100.0 ID (Amps) 5 17 5 2 10 120 80 40 0.0 0 0.01 0.1 1 VDS (Volts) 10 100 0.0001 0.001 0.01 0.1 1 0 10 Pulse Width (s) 18 Figure 10: Single Pulse Power Rating Junction-to-Case (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Zθ JC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJC=3.2°C/W 1 PD 0.1 Single Pulse Ton T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) 4/6 www.freescale.net.cn AON6236 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 50 TA=25°C Power Dissipation (W) IAR (A) Peak Avalanche Current 1000 TA=100°C 100 TA=150°C 10 TA=125°C 1 40 30 20 10 0 1 10 100 Time in avalanche, tA (µ µs) Figure 12: Single Pulse Avalanche capability (Note C) 1000 0 40 10000 30 1000 25 50 75 100 125 TCASE (° °C) Figure 13: Power De-rating (Note F) 150 Power (W) Current rating ID(A) TA=25°C 20 17 5 2 10 100 10 10 1 0 0 25 50 75 100 125 TCASE (° °C) Figure 14: Current De-rating (Note F) 0.001 0.1 100 1000 Pulse Width (s) 18 Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) 0.00001 150 Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJA=64°C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) 5/6 www.freescale.net.cn AON6236 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds Isd Vgs Ig 6/6 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.freescale.net.cn