AOSMD AON6236

AON6236
40V N-Channel MOSFET
General Description
Product Summary
VDS
The AON6236 uses trench MOSFET technology that is
uniquely optimized to provide the most efficient high
frequency switching performance.Power losses are
minimized due to an extremely low combination of
RDS(ON) and Crss.In addition,switching behavior is well
controlled with a "Schottky style" soft recovery body
diode.
40V
30A
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
< 7mΩ
RDS(ON) (at VGS = 4.5V)
< 10.5mΩ
100% UIS Tested
100% Rg Tested
DFN5X6
Top View
D
Top View
Bottom View
1
8
2
7
3
6
4
5
G
S
PIN1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC=25°C
Continuous Drain
Current G
Pulsed Drain Current
Continuous Drain
Current
C
V
A
120
19
IDSM
TA=70°C
±20
24
IDM
TA=25°C
Units
V
30
ID
TC=100°C
Maximum
40
A
15
Avalanche Current C
IAS
33
A
Avalanche energy L=0.1mH C
TC=25°C
EAS
54
mJ
Power Dissipation B
TA=25°C
Power Dissipation A
Junction and Storage Temperature Range
Rev 0: Oct. 2011
4.2
Steady-State
Steady-State
RθJA
RθJC
W
2.7
-55 to 150
TJ, TSTG
Symbol
t ≤ 10s
W
15.5
PDSM
TA=70°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
39
PD
TC=100°C
Typ
24
53
2.6
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°C
Max
30
64
3.2
Units
°C/W
°C/W
°C/W
Page 1 of 6
AON6236
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=250µA, VGS=0V
IGSS
Gate-Body leakage current
VDS=0V, VGS=±20V
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250µA
1.4
ID(ON)
On state drain current
VGS=10V, VDS=5V
120
TJ=55°C
±100
nA
2.4
V
5.6
7
8.4
10.5
VGS=4.5V, ID=20A
8
10.5
mΩ
80
1
V
30
A
Static Drain-Source On-Resistance
TJ=125°C
gFS
Forward Transconductance
VDS=5V, ID=20A
VSD
Diode Forward Voltage
IS=1A,VGS=0V
IS
Maximum Body-Diode Continuous Current G
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
µA
5
1.85
VGS=10V, ID=20A
Output Capacitance
Units
V
1
Zero Gate Voltage Drain Current
Coss
Max
40
VDS=40V, VGS=0V
IDSS
RDS(ON)
Typ
VGS=0V, VDS=20V, f=1MHz
A
0.72
mΩ
S
1225
pF
318
pF
26.5
pF
1.7
3.0
Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
18.5
26
nC
Qg(4.5V) Total Gate Charge
8.2
12
nC
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=20V, ID=20A
VGS=10V, VDS=20V, RL=1Ω,
RGEN=3Ω
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
Qrr
Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
IF=20A, dI/dt=500A/µs
3.5
nC
2.5
nC
6
ns
2.8
ns
23.5
ns
3
ns
14
ns
nC
32.5
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 0: Oct. 2011
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Page 2 of 6
AON6236
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
100
10V
VDS=5V
4.5V
80
80
4.0V
6V
60
3.5V
40
125°C
ID(A)
ID (A)
60
40
25°C
20
20
VGS=3.0V
0
0
0
1
2
3
4
1
5
12
3
4
5
6
Normalized On-Resistance
1.8
10
VGS=4.5V
RDS(ON) (mΩ
Ω)
2
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
8
6
VGS=10V
4
1.6
VGS=10V
ID=20A
1.4
17
5
2
VGS=4.5V 10
1.2
ID=20A
1
0.8
2
0
5
0
10
15
20
25
30
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
25
50
75
100
125
150
175
0
Temperature (°C)
Figure 4: On-Resistance vs. Junction
18Temperature
(Note E)
20
1.0E+02
ID=20A
1.0E+01
40
1.0E+00
125°C
IS (A)
RDS(ON) (mΩ
Ω)
15
10
1.0E-01
125°C
1.0E-02
25°C
1.0E-03
5
1.0E-04
25°C
1.0E-05
0
0.0
2
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 0: Oct. 2011
0.2
0.4
0.6
0.8
1.0
1.2
4
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VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 6
AON6236
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
1600
VDS=20V
ID=20A
1400
Ciss
8
Capacitance (pF)
VGS (Volts)
1200
6
4
1000
800
Coss
600
400
2
Crss
200
0
0
0
5
10
15
Qg (nC)
Figure 7: Gate-Charge Characteristics
20
0
10
15
20
25
30
35
VDS (Volts)
Figure 8: Capacitance Characteristics
40
200
1000.0
RDS(ON)
10.0
100µs
1.0
1ms
10ms
DC
TJ(Max)=150°C
TC=25°C
0.1
TJ(Max)=150°C
TC=25°C
160
10µs
Power (W)
10µs
100.0
ID (Amps)
5
17
5
2
10
120
80
40
0.0
0
0.01
0.1
1
VDS (Volts)
10
100
0.0001
0.001
0.01
0.1
1
10
0
Pulse Width (s)
18
Figure 10: Single Pulse Power Rating Junction-to-Case
(Note F)
Figure 9: Maximum Forward Biased
Safe Operating Area (Note F)
Zθ JC Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJC=3.2°C/W
1
PD
0.1
Single Pulse
Ton
T
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 0: Oct. 2011
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Page 4 of 6
AON6236
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
50
TA=25°C
Power Dissipation (W)
IAR (A) Peak Avalanche Current
1000
TA=100°C
100
TA=150°C
10
TA=125°C
1
40
30
20
10
0
1
10
100
Time in avalanche, tA (µ
µs)
Figure 12: Single Pulse Avalanche capability
(Note C)
1000
0
40
10000
30
1000
25
50
75
100
125
TCASE (°
°C)
Figure 13: Power De-rating (Note F)
150
Power (W)
Current rating ID(A)
TA=25°C
20
17
5
2
10
100
10
10
1
0
0
25
50
75
100
125
TCASE (°
°C)
Figure 14: Current De-rating (Note F)
0.001
0.1
100
1000
Pulse Width (s)
18
Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
0.00001
150
Zθ JA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJA=64°C/W
0.1
PD
0.01
Single Pulse
Ton
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Rev 0: Oct. 2011
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Page 5 of 6
AON6236
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
+ Vdd
DUT
Vgs
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
E AR = 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds Isd
Vgs
Ig
Rev 0: Oct. 2011
Vgs
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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Page 6 of 6