Data Sheet

BAS101; BAS101S
High-voltage switching diodes
Rev. 02 — 14 December 2009
Product data sheet
1. Product profile
1.1 General description
High-voltage switching diodes, encapsulated in a SOT23 small Surface-Mounted
Device (SMD) plastic package.
Table 1.
Product overview
Type number
Package
Configuration
NXP
JEITA
BAS101
SOT23
-
single
BAS101S
SOT23
-
dual series
1.2 Features
„ High switching speed: trr ≤ 50 ns
„ Low leakage current
„ Repetitive peak reverse voltage:
VRRM ≤ 300 V
„ Low capacitance: Cd ≤ 2 pF
„ Reverse voltage: VR ≤ 300 V
„ Small SMD plastic package
1.3 Applications
„ High-speed switching
„ High-voltage switching
„ Voltage clamping
„ Reverse polarity protection
1.4 Quick reference data
Table 2.
Symbol
Quick reference data
Parameter
Conditions
Min
Typ
Max
Unit
-
-
200
mA
-
-
150
nA
-
-
300
V
-
-
50
ns
Per diode
IF
forward current
IR
reverse current
VR
reverse voltage
trr
reverse recovery time
[1]
VR = 250 V
[1]
When switched from IF = 30 mA to IR = 30 mA; RL = 100 Ω; measured at IR = 3 mA.
BAS101; BAS101S
NXP Semiconductors
High-voltage switching diodes
2. Pinning information
Table 3.
Pinning
Pin
Description
Simplified outline
Symbol
BAS101
1
anode
2
not connected
3
cathode
3
3
1
1
2
006aaa764
2
BAS101S
1
anode (diode 1)
2
cathode (diode 2)
3
cathode (diode 1),
anode (diode 2)
3
1
3
2
1
2
006aaa763
3. Ordering information
Table 4.
Ordering information
Type number
Package
Name
Description
Version
BAS101
-
plastic surface-mounted package; 3 leads
SOT23
BAS101S
4. Marking
Table 5.
Marking codes
Marking code[1]
Type number
BAS101
*HQ
BAS101S
*HR
[1]
* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
BAS101_BAS101S_2
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 14 December 2009
2 of 11
BAS101; BAS101S
NXP Semiconductors
High-voltage switching diodes
5. Limiting values
Table 6.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
-
300
V
-
600
V
-
300
V
Per diode
VRRM
repetitive peak reverse
voltage
VR
reverse voltage
IF
forward current
series connection
series connection
-
600
V
-
200
mA
series connection
-
100
mA
-
1
A
-
9
A
IFRM
repetitive peak forward
current
tp ≤ 1 ms;
δ ≤ 0.25
IFSM
non-repetitive peak forward
current
square wave;
tp ≤ 1 μs
[1]
Ptot
total power dissipation
Tamb ≤ 25 °C
[2]
-
250
mW
Tj
junction temperature
-
150
°C
Tamb
ambient temperature
−65
+150
°C
Tstg
storage temperature
−65
+150
°C
Per device
[1]
Tj = 25 °C prior to surge
[2]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
6. Thermal characteristics
Table 7.
Symbol
Thermal characteristics
Parameter
Conditions
thermal resistance from
junction to ambient
in free air
Min
Typ
Max
Unit
-
-
500
K/W
Per device
Rth(j-a)
[1]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
BAS101_BAS101S_2
Product data sheet
[1]
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 14 December 2009
3 of 11
BAS101; BAS101S
NXP Semiconductors
High-voltage switching diodes
7. Characteristics
Table 8.
Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min
Typ
Max
Unit
-
-
1.1
V
Per diode
forward voltage
IF = 100 mA
IR
reverse current
VR = 250 V
-
-
150
nA
VR = 250 V; Tj = 150 °C
-
-
100
μA
Cd
diode capacitance
trr
reverse recovery time
VR = 0 V; f = 1 MHz
[1]
Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
[2]
When switched from IF = 30 mA to IR = 30 mA; RL = 100 Ω; measured at IR = 3 mA.
BAS101_BAS101S_2
Product data sheet
[1]
VF
[2]
-
-
2
pF
-
-
50
ns
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 14 December 2009
4 of 11
BAS101; BAS101S
NXP Semiconductors
High-voltage switching diodes
mhc618
500
IF
(mA)
mbg703
102
IFSM
(A)
400
10
300
200
1
(1) (2)
100
(3)
10−1
0
0
0.5
1
VF (V)
1
1.5
10
102
103
104
tp (μs)
(1) Tamb = 150 °C
Based on square wave currents
(2) Tamb = 75 °C
Tj = 25 °C; prior to surge
(3) Tamb = 25 °C
Fig 1.
Forward current as a function of forward
voltage; typical values
mhc619
102
IR
(μA)
Fig 2.
Non-repetitive peak forward current as a
function of pulse duration; maximum values
mhc621
0.42
Cd
(pF)
10
0.38
1
0.34
10−1
10−2
0
40
80
120
160
0.3
200
Tj (°C)
0
30
40
f = 1 MHz; Tamb = 25 °C
Reverse current as a function of junction
temperature; typical values
Fig 4.
Diode capacitance as a function of reverse
voltage; typical values
BAS101_BAS101S_2
Product data sheet
20
VR (V)
VR = 300 V
Fig 3.
10
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 14 December 2009
5 of 11
BAS101; BAS101S
NXP Semiconductors
High-voltage switching diodes
8. Test information
tr
tp
t
D.U.T.
10 %
+ IF
IF
RS = 50 Ω
SAMPLING
OSCILLOSCOPE
trr
t
Ri = 50 Ω
V = VR + IF × RS
VR
(1)
90 %
mga881
input signal
output signal
(1) IR = 3 mA
Fig 5.
Reverse recovery time test circuit and waveforms
9. Package outline
3.0
2.8
1.1
0.9
3
0.45
0.15
2.5 1.4
2.1 1.2
1
2
1.9
0.48
0.38
Dimensions in mm
Fig 6.
0.15
0.09
04-11-04
Package outline SOT23 (TO-236AB)
10. Packing information
Table 9.
Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.[1]
Type number Package
BAS101
SOT23
Description
4 mm pitch, 8 mm tape and reel
Packing quantity
3000
10000
-215
-235
BAS101S
[1]
For further information and the availability of packing methods, see Section 15.
BAS101_BAS101S_2
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 14 December 2009
6 of 11
BAS101; BAS101S
NXP Semiconductors
High-voltage switching diodes
11. Soldering
2.90
2.50
solder lands
solder resist
2
0.85
1
2.70
1.30
3.00
0.85
3
occupied area
solder paste
0.60
(3x)
0.50 (3x)
0.60 (3x)
1.00
3.30
MSA439
Dimensions in mm
Fig 7.
Reflow soldering footprint SOT23 (TO-236AB)
3.40
1.20 (2x)
solder lands
solder resist
occupied area
2
1
4.60 4.00 1.20
3
preferred transport direction during soldering
2.80
4.50
MSA427
Dimensions in mm
Fig 8.
Wave soldering footprint SOT23 (TO-236AB)
BAS101_BAS101S_2
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 14 December 2009
7 of 11
BAS101; BAS101S
NXP Semiconductors
High-voltage switching diodes
12. Mounting
43.4
0.6
0.7
40
0.6
0.7
0.5
Dimensions in mm
006aaa527
PCB thickness = 1.6 mm
Fig 9.
FR4 PCB, standard footprint SOT23 (TO-236AB)
BAS101_BAS101S_2
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 14 December 2009
8 of 11
BAS101; BAS101S
NXP Semiconductors
High-voltage switching diodes
13. Revision history
Table 10.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
BAS101_BAS101S_2
20091214
Product data sheet
-
BAS101_BAS101S_1
Modifications:
BAS101_BAS101S_1
•
This data sheet was changed to reflect the new company name NXP Semiconductors,
including new legal definitions and disclaimers. No changes were made to the technical
content.
•
Table 3 “Pinning”: updated
20060908
Product data sheet
-
BAS101_BAS101S_2
Product data sheet
-
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 14 December 2009
9 of 11
BAS101; BAS101S
NXP Semiconductors
High-voltage switching diodes
14. Legal information
14.1 Data sheet status
Document status[1][2]
Product status[3]
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
Definition
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
14.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
14.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
14.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
15. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
BAS101_BAS101S_2
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 14 December 2009
10 of 11
NXP Semiconductors
BAS101; BAS101S
High-voltage switching diodes
16. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
9
10
11
12
13
14
14.1
14.2
14.3
14.4
15
16
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . 3
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Test information . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 6
Packing information . . . . . . . . . . . . . . . . . . . . . 6
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Mounting. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 9
Legal information. . . . . . . . . . . . . . . . . . . . . . . 10
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 10
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Contact information. . . . . . . . . . . . . . . . . . . . . 10
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2009.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 14 December 2009
Document identifier: BAS101_BAS101S_2