Voltage Regulators AN79Lxx/AN79LxxM Series 3-pin negative output voltage regulator (100 mA type) ■ Overview AN79Lxx series Unit: mm (1.0) 4.0±0.2 5.1±0.2 5.0±0.2 The AN79Lxx series and the AN79LxxM series are 3-pin, fixed negative output type monolithic voltage regulators. Stabilized fixed output voltage is obtained from unstable DC input voltage without using any external components. 12 types of output voltage are available: −4V, −5V, −6V, −7V, −8V, −9V, −10V, −12V, −15V, −18V, −20V and −24V. They can be used widely in power circuits with current capacity of up to 100mA. (1.0) 2.3±0.2 13.5±0.5 0.6±0.15 0.43+0.1 –0.05 0.43+0.1 –0.05 ■ Features 2.54 • No external components • Output voltage: −4V, −5V, −6V, −7V, −8V, −9V,−10V, −12V, −15V, −18V, −20V, −24V • Built-in overcurrent limit circuit • Built-in thermal overload protection circuit 1 : Output 2 : Common 3 : Intput 2 3 1 SSIP003-P-0000 AN79LxxM series Unit: mm 1.6 max. 4.6 max. 2.6 max. 1.5 1.5 0.8 min. 0.58 max. 0.48 max. 4.25 max. 2.6 typ. 1.8 max. 0.44 max. 3.0 3 2 1 1 : Common 2 : Input 3 : Output HSIP003-P-0000B Note) The packages (SSIP003-P-0000 and HSIP003P-0000B) of this product will be changed to lead-free type (SSIP003-P-0000S and 2 Common HSIP003-P-0000Q). See the new package di(1) mensions section later of this datasheet. ■ Block Diagram (AN79Lxx series) R1 + Voltage Reference Starter Error Amp. − R2 1 Q1 Thermal Protection Output (3) Pass Tr. Current Limiter RSC 3 Input (2) Note) The number in ( ) shows the pin number for the AN79LxxM series. Publication date: December 2001 SFF00006CEB 1 AN79Lxx/AN79LxxM Series ■ Absolute Maximum Ratings at Ta = 25°C Parameter Symbol Input voltage VI Power dissipation Operating ambient temperature Storage temperature AN79Lxx series Rating −35 *1 V −40 *2 V PD 650 *3 mW Topr −20 to +80 °C −55 to +150 Tstg AN79LxxM series Unit °C −55 to +125 *1 AN79L04, AN79L05/M, AN79L06, AN79L07, AN79L08/M, AN79L09/M, AN79L10, AN79L12/M, AN79L15/M, AN79L18 *2 AN79L20, AN79L24 *3 Follow the derating curve. When Tj exceeds 150°C, the internal circuit cuts off the output. AN79LxxM series is mounted on a standard board (glass epoxy: 20mm × 20mm × t1.7mm with Cu foil of 1cm2 or more). ■ Electrical Characteristics at Ta = 25°C • AN79L04 (−4V type) Parameter Symbol Output voltage VO Output voltage tolerance VO Line regulation Load regulation Bias current REGIN REGL IBias Conditions Tj = 25°C Min −3.84 Typ −4 Unit V −4.2 V VI = −6 to −20V, Tj = 25°C 80 mV VI = −7 to −17V, Tj = 25°C 40 mV VI = −7 to −19V, IO = 1 to 70mA −3.8 Max −4.16 IO = 1 to 100mA, Tj = 25°C 10 60 mV IO = 1 to 40mA, Tj = 25°C 4.5 30 mV 3 5 mA Tj = 25°C Bias current fluctuation to input ∆IBias(IN) VI = −7 to −19V, Tj = 25°C 0.5 mA Bias current fluctuation to load ∆IBias(L) IO = 1 to 40mA, Tj = 25°C 0.1 mA Output noise voltage Ripple rejection ratio Vno f = 10Hz to 100kHz, Ta = 25°C RR VI = −7 to −17V, f = 120Hz, Ta = 25°C 38 55 µV dB Minimum input/output voltage difference VDIF(min) Tj = 25°C 0.8 V Output short-circuit current IO(Short) VI = −35V, Tj = 25°C 200 mA Output voltage temperature coefficient ∆VO/Ta IO = 5mA − 0.4 mV/°C Note 1) The specified condition Tj = 25°C means that the test should be carried out within so short a test time (within 10ms) that the characteristic value drift due to the chip junction temperature rise can be ignored. Note 2) Unless otherwise specified, VI = −9V, IO = 40mA, CI = 2µF, CO = 1µF, Tj = 0 to 125°C 2 SFF00006CEB AN79Lxx/AN79LxxM Series ■ Electrical Characteristics at Ta = 25°C (continued) • AN79L05, AN79L05M (−5V type) Parameter Symbol Conditions Output voltage VO Tj = 25°C Output voltage tolerance VO VI = −8 to −20V, IO = 1 to 70mA Line regulation REGIN Load regulation REGL Bias current IBias Bias current fluctuation to input ∆IBias(IN) Bias current fluctuation to load ∆IBias(L) −4.8 Typ −5 −4.75 Max −5.2 Unit V −5.25 V VI = −7 to −21V, Tj = 25°C 100 mV VI = −8 to −18V, Tj = 25°C 50 mV IO = 1 to 100mA, Tj = 25°C 11 60 mV IO = 1 to 40mA, Tj = 25°C 5 30 mV Tj = 25°C 3 5 mA 0.5 mA 0.1 mA VI = −8 to −20V, Tj = 25°C IO = 1 to 40mA, Tj = 25°C Output noise voltage Vno f = 10Hz to 100kHz, Ta = 25°C Ripple rejection ratio RR VI = −8 to −18V, f = 120Hz, Ta = 25°C VDIF(min) Tj = 25°C Output short-circuit current IO(Short) VI = −35V, Tj = 25°C Output voltage temperature coefficient ∆VO/Ta IO = 5mA Minimum input/output voltage difference Min µV 40 55 dB 0.8 V 200 mA − 0.4 mV/°C Note 1) The specified condition Tj = 25°C means that the test should be carried out within so short a test time (within 10ms) that the characteristic value drift due to the chip junction temperature rise can be ignored. Note 2) Unless otherwise specified, VI = −10V, IO = 40mA, CI = 2µF, CO = 1µF, Tj = 0 to 125°C (AN79L05) and Tj = 0 to 100°C (AN79L05M) • AN79L06 (−6V type) Parameter Symbol Conditions Output voltage VO Tj = 25°C Output voltage tolerance VO VI = −9 to −21V, IO = 1 to 70mA Line regulation REGIN Load regulation REGL Bias current IBias Min −5.76 Typ −6 −5.7 Max −6.24 Unit V −6.3 V VI = −8 to −22V, Tj = 25°C 120 mV VI = −9 to −19V, Tj = 25°C 60 mV IO = 1 to 100mA, Tj = 25°C 12 60 mV IO = 1 to 40mA, Tj = 25°C 5.5 30 mV Tj = 25°C 5 mA Bias current fluctuation to input ∆IBias(IN) VI = −9 to −21V, Tj = 25°C 0.5 mA Bias current fluctuation to load ∆IBias(L) IO = 1 to 40mA, Tj = 25°C 0.1 mA Output noise voltage Vno f = 10Hz to 100kHz, Ta = 25°C Ripple rejection ratio RR VI = −9 to −19V, f = 120Hz, Ta = 25°C VDIF(min) Tj = 25°C Output short-circuit current IO(Short) VI = −35V, Tj = 25°C Output voltage temperature coefficient ∆VO/Ta IO = 5mA Minimum input/output voltage difference 3 44 55 µV dB 0.8 V 200 mA − 0.4 mV/°C Note 1) The specified condition Tj = 25°C means that the test should be carried out within so short a test time (within 10ms) that the characteristic value drift due to the chip junction temperature rise can be ignored. Note 2) Unless otherwise specified, VI = −11V, IO = 40mA, CI = 2µF, CO = 1µF, Tj = 0 to 125°C SFF00006CEB 3 AN79Lxx/AN79LxxM Series ■ Electrical Characteristics at Ta = 25°C (continued) • AN79L07 (−7V type) Parameter Symbol Conditions Min Output voltage VO Tj = 25°C −6.72 Output voltage tolerance VO VI = −10 to −22V, IO = 1 to 70mA −6.65 Line regulation Load regulation Bias current REGIN REGL IBias −7 VI = −9 to −23V, Tj = 25°C VI = −10 to −20V, Tj = 25°C Max −7.28 Unit V −7.35 V 140 mV 70 mV IO = 1 to 100mA, Tj = 25°C 13 70 mV IO = 1 to 40mA, Tj = 25°C 6 40 mV Tj = 25°C 3 5 mA 0.5 mA 0.1 mA Bias current fluctuation to input ∆IBias(IN) VI = −10 to −22V, Tj = 25°C Bias current fluctuation to load ∆IBias(L) IO = 1 to 40mA, Tj = 25°C Output noise voltage Vno f = 10Hz to 100kHz, Ta = 25°C Ripple rejection ratio RR VI = −10 to −20V, f = 120Hz, Ta = 25°C VDIF(min) Tj = 25°C Output short-circuit current IO(Short) VI = −35V, Tj = 25°C Output voltage temperature coefficient ∆VO/Ta IO = 5mA Minimum input/output voltage difference Typ µV 48 54 dB 0.8 V 200 mA − 0.5 mV/°C Note 1) The specified condition Tj = 25°C means that the test should be carried out within so short a test time (within 10ms) that the characteristic value drift due to the chip junction temperature rise can be ignored. Note 2) Unless otherwise specified, VI = −12V, IO = 40mA, CI = 2µF, CO = 1µF, Tj = 0 to 125°C • AN79L08, AN79L08M (−8V type) Parameter Symbol Conditions Output voltage VO Tj = 25°C Output voltage tolerance VO VI = −11 to −23V, IO = 1 to 70mA Line regulation Load regulation Bias current REGIN REGL IBias Min Typ −8 Max Unit −8.32 V −8.4 V VI = −10 to −24V, Tj = 25°C 160 mV VI = −11 to −21V, Tj = 25°C 80 mV −7.68 −7.6 IO = 1 to 100mA, Tj = 25°C 15 80 mV IO = 1 to 40mA, Tj = 25°C 7 40 mV Tj = 25°C 3 5 mA Bias current fluctuation to input ∆IBias(IN) VI = −11 to −23V, Tj = 25°C 0.5 mA Bias current fluctuation to load ∆IBias(L) IO = 1 to 40mA, Tj = 25°C 0.1 mA Output noise voltage Vno f = 10Hz to 100kHz, Ta = 25°C Ripple rejection ratio RR VI = −11 to −21V, f = 120Hz, Ta = 25°C 52 54 µV dB Minimum input/output voltage difference VDIF(min) Tj = 25°C 0.8 V Output short-circuit current IO(Short) VI = −35V, Tj = 25°C 200 mA Output voltage temperature coefficient ∆VO/Ta IO = 5mA, Tj = 0 to 125°C − 0.6 mV/°C Note 1) The specified condition Tj = 25°C means that the test should be carried out within so short a test time (within 10ms) that the characteristic value drift due to the chip junction temperature rise can be ignored. Note 2) Unless otherwise specified, VI = −14V, IO = 40mA, CI = 2µF, CO = 1µF, Tj = 0 to 125°C (AN79L08) and Tj = 0 to 100°C (AN79L08M) 4 SFF00006CEB AN79Lxx/AN79LxxM Series ■ Electrical Characteristics at Ta = 25°C (continued) • AN79L09, AN79L09M (−9V type) Parameter Symbol Conditions Min Output voltage VO Tj = 25°C −8.64 Output voltage tolerance VO VI = −12 to −24V, IO = 1 to 70mA −8.55 Line regulation REGIN Load regulation REGL Bias current IBias Bias current fluctuation to input ∆IBias(IN) Bias current fluctuation to load ∆IBias(L) −9 Max −9.36 Unit V −9.45 V VI = −11 to −25V, Tj = 25°C 160 mV VI = −12 to −22V, Tj = 25°C 80 mV IO = 1 to 100mA, Tj = 25°C 16 90 mV IO = 1 to 40mA, Tj = 25°C 8 50 mV Tj = 25°C 3 5 mA 0.5 mA 0.1 mA VI = −12 to −24V, Tj = 25°C IO = 1 to 40mA, Tj = 25°C Output noise voltage Vno f = 10Hz to 100kHz, Ta = 25°C Ripple rejection ratio RR VI = −12 to −22V, f = 120Hz, Ta = 25°C VDIF(min) Tj = 25°C Output short-circuit current IO(Short) VI = −35V, Tj = 25°C Output voltage temperature coefficient ∆VO/Ta IO = 5mA, Tj = 0 to 125°C Minimum input/output voltage difference Typ µV 58 53 dB 0.8 V 200 mA − 0.6 mV/°C Note 1) The specified condition Tj = 25°C means that the test should be carried out within so short a test time (within 10ms) that the characteristic value drift due to the chip junction temperature rise can be ignored. Note 2) Unless otherwise specified, VI = −15V, IO = 40mA, CI = 2µF, CO = 1µF, Tj = 0 to 125°C (AN79L09) and Tj = 0 to 100°C (AN79L09M) • AN79L10 (−10V type) Parameter Symbol Conditions Min Output voltage VO Tj = 25°C −9.6 Output voltage tolerance VO VI = −13 to −25V, IO = 1 to 70mA −9.5 Line regulation REGIN Load regulation REGL Bias current IBias Typ −10 Max −10.4 Unit V −10.5 V VI = −12 to −26V, Tj = 25°C 160 mV VI = −13 to −23V, Tj = 25°C 80 mV IO = 1 to 100mA, Tj = 25°C 17 100 mV IO = 1 to 40mA, Tj = 25°C 9 50 mV Tj = 25°C 3 5 mA Bias current fluctuation to input ∆IBias(IN) VI = −13 to −25V, Tj = 25°C 0.5 mA Bias current fluctuation to load ∆IBias(L) IO = 1 to 40mA, Tj = 25°C 0.1 mA Output noise voltage Vno f = 10Hz to 100kHz, Ta = 25°C Ripple rejection ratio RR VI = −13 to −23V, f = 120Hz, Ta = 25°C VDIF(min) Tj = 25°C Output short-circuit current IO(Short) VI = −35V, Tj = 25°C Output voltage temperature coefficient ∆VO/Ta IO = 5mA Minimum input/output voltage difference 65 53 µV dB 0.8 V 200 mA − 0.7 mV/°C Note 1) The specified condition Tj = 25°C means that the test should be carried out within so short a test time (within 10ms) that the characteristic value drift due to the chip junction temperature rise can be ignored. Note 2) Unless otherwise specified, VI = −16V, IO = 40mA, CI = 2µF, CO = 1µF, Tj = 0 to 125°C SFF00006CEB 5 AN79Lxx/AN79LxxM Series ■ Electrical Characteristics at Ta = 25°C (continued) • AN79L12, AN79L12M (−12V type) Parameter Symbol Conditions Min Output voltage VO Tj = 25°C −11.5 Output voltage tolerance VO VI = −15 to −27V, IO = 1 to 70mA −11.4 Line regulation REGIN Load regulation REGL Bias current IBias Bias current fluctuation to input ∆IBias(IN) Bias current fluctuation to load ∆IBias(L) −12 Max −12.5 Unit V −12.6 V VI = −14.5 to −30V, Tj = 25°C 200 mV VI = −15 to −25V, Tj = 25°C 100 mV IO = 1 to 100mA, Tj = 25°C 20 100 mV IO = 1 to 40mA, Tj = 25°C 10 50 mV 3 5 mA 0.5 mA 0.1 mA Tj = 25°C VI = −15 to −27V, Tj = 25°C IO = 1 to 40mA, Tj = 25°C Output noise voltage Vno f = 10Hz to 100kHz, Ta = 25°C Ripple rejection ratio RR VI = −15 to −25V, f = 120Hz, Ta = 25°C VDIF(min) Tj = 25°C Output short-circuit current IO(Short) VI = −35V, Tj = 25°C Output voltage temperature coefficient ∆VO/Ta IO = 5mA Minimum input/output voltage difference Typ µV 75 52 dB 0.8 V 200 mA − 0.8 mV/°C Note 1) The specified condition Tj = 25°C means that the test should be carried out within so short a test time (within 10ms) that the characteristic value drift due to the chip junction temperature rise can be ignored. Note 2) Unless otherwise specified, VI = −19V, IO = 40mA, CI = 2µF, CO = 1µF, Tj = 0 to 125°C (AN79L12) and Tj = 0 to 100°C (AN79L12M) • AN79L15, AN79L15M (−15V type) Parameter Symbol Conditions Output voltage VO Tj = 25°C Output voltage tolerance VO VI = −18 to −28V, IO = 1 to 70mA Line regulation Load regulation Bias current REGIN REGL IBias Min −14.4 Typ −15 −14.25 VI = −17.5 to −33V, Tj = 25°C VI = −18 to −28V, Tj = 25°C Max −15.6 Unit V −15.75 V 200 mV 100 mV IO = 1 to 100mA, Tj = 25°C 25 130 mV IO = 1 to 40mA, Tj = 25°C 12 60 mV 3 5 mA Tj = 25°C Bias current fluctuation to input ∆IBias(IN) VI = −18 to −30V, Tj = 25°C 0.5 mA Bias current fluctuation to load ∆IBias(L) IO = 1 to 40mA, Tj = 25°C 0.1 mA Output noise voltage Vno f = 10Hz to 100kHz, Ta = 25°C Ripple rejection ratio RR VI = −18 to −28V, f = 120Hz, Ta = 25°C 90 51 µV dB Minimum input/output voltage difference VDIF(min) Tj = 25°C 0.8 V Output short-circuit current IO(Short) VI = −35V, Tj = 25°C 200 mA Output voltage temperature coefficient ∆VO/Ta IO = 5mA − 0.9 mV/°C Note 1) The specified condition Tj = 25°C means that the test should be carried out within so short a test time (within 10ms) that the characteristic value drift due to the chip junction temperature rise can be ignored. Note 2) Unless otherwise specified, VI = −23V, IO = 40mA, CI = 2µF, CO = 1µF, Tj = 0 to 125°C (AN79L15) and Tj = 0 to 100°C (AN79L15M) 6 SFF00006CEB AN79Lxx/AN79LxxM Series ■ Electrical Characteristics at Ta = 25°C (continued) • AN79L18 (−18V type) Parameter Symbol Output voltage VO Output voltage tolerance VO Line regulation Load regulation Bias current REGIN REGL IBias Conditions −17.3 VI = −21 to −33V, IO = 1 to 70mA −17.1 −18 VI = −21 to −32V, Tj = 25°C Max −18.7 Unit V −18.9 V 200 mV 100 mV IO = 1 to 100mA, Tj = 25°C 30 160 mV IO = 1 to 40mA, Tj = 25°C 15 80 mV 3 5 mA 0.5 mA 0.1 mA Tj = 25°C ∆IBias(IN) VI = −21 to −33V, Tj = 25°C Bias current fluctuation to load ∆IBias(L) IO = 1 to 40mA, Tj = 25°C Ripple rejection ratio Typ VI = −21 to −33V, Tj = 25°C Bias current fluctuation to input Output noise voltage Min Tj = 25°C Vno f = 10Hz to 100kHz, Ta = 25°C RR VI = −22 to −32V, f = 120Hz, Ta = 25°C µV 110 50 dB Minimum input/output voltage difference VDIF(min) Tj = 25°C 0.8 V Output short-circuit current IO(Short) VI = −35V, Tj = 25°C 200 mA Output voltage temperature coefficient ∆VO/Ta IO = 5mA −1 mV/°C Note 1) The specified condition Tj = 25°C means that the test should be carried out within so short a test time (within 10ms) that the characteristic value drift due to the chip junction temperature rise can be ignored. Note 2) Unless otherwise specified, VI = −27V, IO = 40mA, CI = 2µF, CO = 1µF, Tj = 0 to 125°C • AN79L20 (−20V type) Parameter Symbol Conditions Output voltage VO Tj = 25°C Output voltage tolerance VO VI = −23 to −35V, IO = 1 to 70mA Line regulation REGIN Load regulation REGL Bias current IBias Min −19.2 Typ −20 −19 Max −20.8 Unit V −21 V VI = −23 to −35V, Tj = 25°C 200 mV VI = −24 to −34V, Tj = 25°C 100 mV IO = 1 to 100mA, Tj = 25°C 35 180 mV IO = 1 to 40mA, Tj = 25°C 17 90 mV 3 5 mA Tj = 25°C Bias current fluctuation to input ∆IBias(IN) VI = −23 to −35V, Tj = 25°C 0.5 mA Bias current fluctuation to load ∆IBias(L) IO = 1 to 40mA, Tj = 25°C 0.1 mA Output noise voltage Ripple rejection ratio Vno f = 10Hz to 100kHz, Ta = 25°C RR VI = −24 to −34V, f = 120Hz, Ta = 25°C 135 49 µV dB VDIF(min) Tj = 25°C 0.8 Output short-circuit current IO(Short) VI = −35V, Tj = 25°C 200 mA Output voltage temperature coefficient ∆VO/Ta IO = 5mA −1 mV/°C Minimum input/output voltage difference V Note 1) The specified condition Tj = 25°C means that the test should be carried out within so short a test time (within 10ms) that the characteristic value drift due to the chip junction temperature rise can be ignored. Note 2) Unless otherwise specified, VI = −29V, IO = 40mA, CI = 2µF, CO = 1µF, Tj = 0 to 125°C SFF00006CEB 7 AN79Lxx/AN79LxxM Series ■ Electrical Characteristics at Ta = 25°C (continued) • AN79L24 (−24V type) Parameter Symbol Output voltage VO Output voltage tolerance VO Line regulation REGL Bias current Min −22.8 −25 V −25.2 V 200 mV VI = −27 to −38V, Tj = 25°C VI = −27 to −37V, Tj = 25°C 100 mV IO = 1 to 100mA, Tj = 25°C 40 200 mV IO = 1 to 40mA, Tj = 25°C 20 100 mV 3 5 mA 0.5 mA 0.1 mA Bias current fluctuation to input ∆IBias(IN) VI = −27 to −38V, Tj = 25°C Bias current fluctuation to load ∆IBias(L) IO = 1 to 40mA, Tj = 25°C Ripple rejection ratio Unit Max −24 Tj = 25°C IBias Output noise voltage Typ −23 VI = −27 to −38V, IO = 1 to 70mA REGIN Load regulation Conditions Tj = 25°C Vno f = 10Hz to 100kHz, Ta = 25°C RR VI = −28 to −38V, f = 120Hz, Ta = 25°C µV 170 49 dB Minimum input/output voltage difference VDIF(min) Tj = 25°C 0.8 V Output short-circuit current IO(Short) VI = −35V, Tj = 25°C 200 mA Output voltage temperature coefficient ∆VO/Ta IO = 5mA −1 mV/°C Note 1) The specified condition Tj = 25°C means that the test should be carried out within so short a test time (within 10ms) that the characteristic value drift due to the chip junction temperature rise can be ignored. Note 2) Unless otherwise specified, VI = −33V, IO = 40mA, CI = 2µF, CO = 1µF, Tj = 0 to 125°C ■ Main Characteristics PD Ta (AN79Lxx series) PD Ta (AN79LxxM series) VO Tj −5.12 1.0 0.8 0.6 0.4 0.2 Mounted on standard board (glass epoxy: 20 mm × 20 mm × t1.7mm with Cu foil of 1cm2 or more) AN79L05 VI = −10V IO = 1mA −5.08 0.8 Output voltage VO (V) Independent IC without a heat sink Rth(j-a) = 190°C/W PD = 658mW (25°C) Power dissipation PD (W) Power dissipation PD (W) 1.0 0.6 0.4 0.2 −5.04 −5.00 −4.96 −4.92 −4.88 −4.84 0 0 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (°C) 8 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (°C) SFF00006CEB −4.80 −25 0 25 50 75 100 Junction temperature Tj (°C) 125 AN79Lxx/AN79LxxM Series Load transient response 20 AN79L05 AN79L05 15 1.2 IO = 100mA 1.0 IO =2 0m IO =1 A IO = 0mA 1m A 0.8 0.6 0.4 −50 0 50 100 150 10 5 10 0 −10 −20 0 2 4 Junction temperature Tj (°C) 6 Time t (µs) 8 10 Input voltage VI (V) Output voltage fluctuation (V) Input transient response AN79L05 200 100 0 1 0 −1 −2 0 10 20 30 40 50 Time t (µs) RR f Ripple rejection ratio RR (dB) 120 AN79L05 IO = 5mA 100 80 60 40 20 0 10 100 1k 10k 100k Frequency f (Hz) ■ Basic Regulator Circuit −VI Input Output −VO 1 3 AN79Lxx CI − + 2 − Common + CO Connect CI of 2µF when the input line is long. CO improves the transient response. 1µF SFF00006CEB 9 Load current IO (mA) VDIF(min) Tj 1.4 Output voltage fluctuation (mV) Minimum input/output voltage difference VDIF(min) (V) ■ Main Characteristics (continued) AN79Lxx/AN79LxxM Series ■ Usage Notes 1. Cautions for a basic circuit CI: When a wiring from a smoothing circuit to a three-pin regulator is long, it is likely to oscillate at output. A capacitor of 0.1µF to 0.47µF should be connected near an input pin. CO: Deadly needed to prevent from oscillation (0.33µF to 1.0µF). It is recommended to use a capacitor of a small internal impedance (ex. tantalum capacitor) when using it under a low temperature. When any sudden change of load current is likely to occur, connect an electrolytic capacitor of 10µF to 100µF to improve a transitional response of output voltage. Di: Normally unnecessary. But add it in the case that there is a residual voltage at the output capacitor Co even after switching off the supply power because a current is likely to flow into an output pin of the IC and damage the IC. Di VI VO 3 1 CI CO 2 Figure 1 2. Other caution items 1) Short-circuit between the input pin and GND pin If the input pin is short-circuitted to GND or is cut off when a large capacitance capacitor has been connected to the IC's load, a voltage of a capacitor connected to an output pin is applied between input/output of the IC and this likely results in damage of the IC. It is necessary, therefore, to connect a diode, as shown in figure 2, to counter the reverse bias between input/output pins. In 3 1 2 GND Output Out − + CO Figure 2 2) Floating of GND pin If a GND pin is made floating in an operating mode, an unstabilized input voltage is outputted. In this case, a thermal protection circuit inside the IC does not normally operate. In this state, if the load is short-circuited or overloaded, it is likely to damage the IC. ■ Application Circuit Example −VI Input 3 1 −VO Output AN79Lxx 2 − + VO' R2 Common − 2µF + IBias 1µF R1 R |VO | = VO' 1 + R1 + IQR1 2 Note) VO varies due to sample to sample variation of IBias . Never fail to adjust individually with R1 . 10 SFF00006CEB AN79Lxx/AN79LxxM Series ■ New Package Dimensions (Unit: mm) • SSIP003-P-0000S (Lead-free package) 4.00±0.20 (1.00) (1.00) 5.00±0.20 5.00±0.20 0.60±0.15 1 1.27 2.30±0.20 0.40+0.10 -0.05 13.30±0.50 0.40±0.10 3 1.27 • HSIP003-P-0000Q (Lead-free package) 1.00+0.10 -0.20 2.50±0.10 1 0.40+0.10 -0.05 1.50 3 0.40+0.10 -0.05 0.50+0.10 -0.05 0.15 M 0.42+0.10 -0.05 (0.75) 1.50±0.10 3.00 2.65±0.10 0.10 (0.40) 4.00+0.25 -0.20 4.50±0.10 1.55±0.20 SFF00006CEB 11 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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(4) The products and product specifications described in this material are subject to change without notice for reasons of modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, redundant design is recommended, so that such equipment may not violate relevant laws or regulations because of the function of our products. (6) When using products for which dry packing is required, observe the conditions (including shelf life and after-unpacking standby time) agreed upon when specification sheets are individually exchanged. (7) No part of this material may be reprinted or reproduced by any means without written permission from our company. Please read the following notes before using the datasheets A. These materials are intended as a reference to assist customers with the selection of Panasonic semiconductor products best suited to their applications. Due to modification or other reasons, any information contained in this material, such as available product types, technical data, and so on, is subject to change without notice. Customers are advised to contact our semiconductor sales office and obtain the latest information before starting precise technical research and/or purchasing activities. B. Panasonic is endeavoring to continually improve the quality and reliability of these materials but there is always the possibility that further rectifications will be required in the future. Therefore, Panasonic will not assume any liability for any damages arising from any errors etc. that may appear in this material. C. These materials are solely intended for a customer's individual use. Therefore, without the prior written approval of Panasonic, any other use such as reproducing, selling, or distributing this material to a third party, via the Internet or in any other way, is prohibited. 2001 MAR