Voltage Regulators AN77Lxx/AN77LxxM Series 3-pin, positive output, low dropout voltage regulator (100 mA type) ■ Overview AN77Lxx series 5.1±0.2 (1.0) 4.0±0.2 (1.0) 2.3±0.2 13.5±0.5 0.6±0.15 ■ Features 0.43+0.1 –0.05 0.43+0.1 –0.05 2.54 1 : Input 2 : Output 3 : Common 2 3 1 SSIP003-P-0000 AN77LxxM series Unit: mm 1.6 max. 4.6 max. 2.6 max. 1.5 1.5 0.8 min. 0.58 max. 0.48 max. 4.25 max. 1.8 max. 2.6 typ. • Minimum input/output voltage difference: 0.22V typ. (3V type) • Built-in overcurrent limit circuit • Built-in rush current prevention circuit at input voltage rise • Built-in overheat protection circuit • Built-in input short-circuit protection circuit • Output voltage: 3V, 3.5V, 4V, 4.5V, 5V, 6V, 7V, 8V, 9V, 10V, 12V Unit: mm 5.0±0.2 The AN77Lxx series and the AN77LxxM series are stabilized constant voltage power supplies with a low input/output voltage difference (0.22V typ. for AN77L03). It is suitable for the low-voltage equipment using batteries and consumer/industrial equipment with great fluctuation of the supply voltage. 0.44 max. 3.0 3 2 1 1 : Output 2 : Common 3 : Input HSIP003-P-0000B Note) The packages (SSIP003-P-0000 and HSIP003P-0000B) of this product will be changed to lead-free type (SSIP003-P-0000S and HSIP003-P-0000Q). See the new package dimensions section later of this datasheet. Publication date: October 2002 SFF00004CEB 1 AN77Lxx/AN77LxxM Series ■ Block Diagram (AN77LxxM series) Over Current Protection Over Current Protection Voltage Reference Starter Input Short Circuit Protection Error Amp. + Rush Current Protection − Thermal Protection 3 IN (1) 2 GND (3) 1 OUT (2) Note) The number in ( ) shows the pin number for the AN77Lxx series. ■ Absolute Maximum Ratings at Ta = 25°C Parameter * Symbol Rating Supply voltage VIN 30 V Supply current IIN 200 mA mW Power dissipation * PD 650 Operating ambient temperature Topr −30 to +85 °C Storage temperature Tstg −55 to +150 °C HSIP003-P-0000B is mounted on a standard board (glass epoxy: 20mm × 20mm × t1.7mm with Cu foil of 1cm2 or more). ■ Recommended Operating Range at Ta = 25°C Part No. Output voltage (VO) Operation supply voltage range (VI) AN77L03, AN77L03M AN77L035, AN77L035M Unit 3 VO +0.3 to 13.62 V 3.5 VO +0.41 to 14.14 V 4 VO +0.3 to 14.66 V 4.5 VO +0.43 to 15.18 V AN77L05, AN77L05M 5 VO +0.3 to 15.7 V AN77L06, AN77L06M 6 VO +0.46 to 16.74 V AN77L07, AN77L07M 7 VO +0.48 to 17.78 V AN77L08, AN77L08M 8 VO +0.51 to 18.82 V AN77L09, AN77L09M 9 VO +0.53 to 19.86 V AN77L10, AN77L10M 10 VO +0.55 to 20.9 V AN77L12, AN77L12M 12 VO +0.6 to 22.98 V AN77L04, AN77L04M AN77L045, AN77L045M 2 Unit SFF00004CEB AN77Lxx/AN77LxxM Series ■ Electrical Characteristics at Ta = 25°C • AN77L03, AN77L03M (3V, 100mA type) Parameter Symbol Output voltage VO Line regulation REGIN Load regulation REGL Bias current under no load IBias Conditions Tj = 25°C Min 2.88 VI = 3.62 to 13.62V, Tj = 25°C IO = 0 to 100mA, Tj = 25°C IO = 0mA, Tj = 25°C Max Unit 3 3.12 V 2 60 mV 8 60 mV 0.9 1.5 mA 3 5 mA 1.5 5 mA Bias current fluctuation to load ∆IBias Bias current before regulation start Irush VI = 2.7V, IO = 0mA, Tj = 25°C Ripple rejection ratio RR VI = 3.62 to 5.62V, f = 120Hz Minimum input/output voltage difference 1 VDIF(min)1 VI = 2.7V, IO = 50mA, Tj = 25°C 0.12 0.25 V Minimum input/output voltage difference 2 VDIF(min)2 VI = 2.7V, IO = 100mA, Tj = 25°C 0.22 0.3 V Output noise voltage Output voltage temperature coefficient IO = 0 to 100mA, Tj = 25°C Typ 60 70 dB Vno f = 10Hz to 100kHz 70 µV ∆VO/Ta Tj = −30 to +125°C 0.2 mV/°C Note 1) The specified condition Tj = 25°C means that the test should be carried out within so short a test time (within 10ms) that the characteristic value drift due to the chip junction temperature rise can be ignored. Note 2) Unless otherwise specified, VI = 4V, IO = 50mA and CO = 10µF • AN77L035, AN77L035M (3.5V, 100mA type) Parameter Symbol Output voltage VO Line regulation REGIN Load regulation REGL Bias current under no load IBias Conditions Tj = 25°C Min 3.36 VI = 4.14 to 14.14V, Tj = 25°C IO = 0 to 100mA, Tj = 25°C IO = 0mA, Tj = 25°C Bias current fluctuation to load ∆IBias IO = 0 to 100mA, Tj = 25°C Bias current before regulation start Irush VI = 3.15V, IO = 0mA, Tj = 25°C Ripple rejection ratio RR VI = 4.14 to 6.14V, f = 120Hz 59 Typ Max 3.64 V 3 60 mV 9 60 mV 0.9 1.5 mA 3 5 mA 1.5 5 mA 69 dB Minimum input/output voltage difference 1 VDIF(min)1 VI = 3.15V, IO = 50mA, Tj = 25°C 0.12 0.25 Minimum input/output voltage difference 2 VDIF(min)2 VI = 3.15V, IO = 100mA, Tj = 25°C 0.22 0.41 Output noise voltage Output voltage temperature coefficient Unit 3.5 V V Vno f = 10Hz to 100kHz 75 µV ∆VO/Ta Tj = −30 to +125°C 0.23 mV/°C Note 1) The specified condition Tj = 25°C means that the test should be carried out within so short a test time (within 10ms) that the characteristic value drift due to the chip junction temperature rise can be ignored. Note 2) Unless otherwise specified, VI = 4.5V, IO = 50mA and CO = 10µF • AN77L04, AN77L04M (4V, 100mA type) Parameter Symbol Output voltage VO Line regulation REGIN Load regulation REGL Bias current under no load IBias Conditions Tj = 25°C Min 3.84 Typ Max 4.16 V VI = 4.66 to 14.66V, Tj = 25°C 3 60 mV IO = 0 to 100mA, Tj = 25°C 9 60 mV 0.9 1.5 mA 3 5 mA 1.5 5 mA IO = 0mA, Tj = 25°C Bias current fluctuation to load ∆IBias Bias current before regulation start Irush VI = 3.6V, IO = 0mA, Tj = 25°C Ripple rejection ratio RR VI = 4.66 to 6.66V, f = 120Hz Minimum input/output voltage difference 1 VDIF(min)1 VI = 3.6V, IO = 50mA, Tj = 25°C 0.12 0.25 Minimum input/output voltage difference 2 VDIF(min)2 VI = 3.6V, IO = 100mA, Tj = 25°C 0.23 0.3 Output noise voltage Output voltage temperature coefficient Unit 4 IO = 0 to 100mA, Tj = 25°C 59 69 dB V V Vno f = 10Hz to 100kHz 80 µV ∆VO/Ta Tj = −30 to +125°C 0.26 mV/°C Note 1) The specified condition Tj = 25°C means that the test should be carried out within so short a test time (within 10ms) that the characteristic value drift due to the chip junction temperature rise can be ignored. Note 2) Unless otherwise specified, VI = 5V, IO = 50mA and CO = 10µF SFF00004CEB 3 AN77Lxx/AN77LxxM Series ■ Electrical Characteristics at Ta = 25°C (continued) • AN77L045, AN77L045M (4.5V, 100mA type) Parameter Symbol Output voltage VO Line regulation REGIN Load regulation REGL Bias current under no load IBias Conditions Tj = 25°C Min 4.32 VI = 5.18 to 15.18V, Tj = 25°C Typ Max Unit 4.5 4.68 V 3 60 mV IO = 0 to 100mA, Tj = 25°C 10 60 mV IO = 0mA, Tj = 25°C 0.9 1.5 mA 3 5 mA 1.5 5 mA Bias current fluctuation to load ∆IBias Bias current before regulation start Irush VI = 4.05V, IO = 0mA, Tj = 25°C IO = 0 to 100mA, Tj = 25°C Ripple rejection ratio RR VI = 7.18 to 6.18V, f = 120Hz 58 68 dB Minimum input/output voltage difference 1 VDIF(min)1 VI = 4.05V, IO = 50mA, Tj = 25°C 0.12 0.25 V Minimum input/output voltage difference 2 VDIF(min)2 VI = 4.05V, IO = 100mA, Tj = 25°C 0.23 0.43 V Output noise voltage Output voltage temperature coefficient Vno f = 10Hz to 100kHz 85 µV ∆VO/Ta Tj = −30 to +125°C 0.3 mV/°C Note 1) The specified condition Tj = 25°C means that the test should be carried out within so short a test time (within 10ms) that the characteristic value drift due to the chip junction temperature rise can be ignored. Note 2) Unless otherwise specified, VI = 5.5V, IO = 50mA and CO = 10µF • AN77L05, AN77L05M (5V, 100mA type) Parameter Symbol Output voltage VO Line regulation REGIN Load regulation REGL Bias current under no load IBias Conditions Tj = 25°C Min 4.8 VI = 5.7 to 15.7V, Tj = 25°C Typ Max 5.2 V 4 60 mV IO = 0 to 100mA, Tj = 25°C 10 60 mV IO = 0mA, Tj = 25°C 0.9 1.5 mA 3 5 mA 1.5 5 mA Bias current fluctuation to load ∆IBias Bias current before regulation start Irush VI = 4.5V, IO = 0mA, Tj = 25°C Ripple rejection ratio RR VI = 5.7 to 7.7V, f = 120Hz IO = 0 to 100mA, Tj = 25°C 58 68 dB Minimum input/output voltage difference 1 VDIF(min)1 VI = 4.5V, IO = 50mA, Tj = 25°C 0.12 0.25 Minimum input/output voltage difference 2 VDIF(min)2 VI = 4.5V, IO = 100mA, Tj = 25°C 0.24 0.3 Output noise voltage Output voltage temperature coefficient Unit 5 V V Vno f = 10Hz to 100kHz 90 µV ∆VO/Ta Tj = −30 to +125°C 0.33 mV/°C Note 1) The specified condition Tj = 25°C means that the test should be carried out within so short a test time (within 10ms) that the characteristic value drift due to the chip junction temperature rise can be ignored. Note 2) Unless otherwise specified, VI = 6V, IO = 50mA and CO = 10µF • AN77L06, AN77L06M (6V, 100mA type) Parameter Symbol Output voltage VO Line regulation REGIN Load regulation REGL Bias current under no load IBias Conditions Tj = 25°C Min 5.76 VI = 6.74 to 16.74V, Tj = 25°C Typ Max Unit 6 6.24 V 4 60 mV IO = 0 to 100mA, Tj = 25°C 11 60 mV IO = 0mA, Tj = 25°C 0.9 1.5 mA 3 5 mA 1.5 5 mA Bias current fluctuation to load ∆IBias Bias current before regulation start Irush VI = 5.4V, IO = 0mA, Tj = 25°C Ripple rejection ratio RR VI = 6.74 to 8.74V, f = 120Hz Minimum input/output voltage difference 1 VDIF(min)1 VI = 5.4V, IO = 50mA, Tj = 25°C 0.12 0.25 V Minimum input/output voltage difference 2 VDIF(min)2 VI = 5.4V, IO = 100mA, Tj = 25°C 0.25 0.46 V Vno f = 10Hz to 100kHz 105 µV ∆VO/Ta Tj = −30 to +125°C 0.4 mV/°C Output noise voltage Output voltage temperature coefficient IO = 0 to 100mA, Tj = 25°C 56 dB 66 Note 1) The specified condition Tj = 25°C means that the test should be carried out within so short a test time (within 10ms) that the characteristic value drift due to the chip junction temperature rise can be ignored. Note 2) Unless otherwise specified, VI = 7V, IO = 50mA and CO = 10µF 4 SFF00004CEB AN77Lxx/AN77LxxM Series ■ Electrical Characteristics at Ta = 25°C (continued) • AN77L07, AN77L07M (7V, 100mA type) Parameter Symbol Output voltage VO Line regulation REGIN Load regulation REGL Bias current under no load IBias Conditions Tj = 25°C Min 6.72 VI = 7.78 to 17.78V, Tj = 25°C Typ Max Unit 7.0 7.28 V 5 70 mV IO = 0 to 100mA, Tj = 25°C 11 70 mV IO = 0mA, Tj = 25°C 1.1 1.6 mA 3 5 mA 1.5 5 mA Bias current fluctuation to load ∆IBias Bias current before regulation start Irush VI = 6.3V, IO = 0mA, Tj = 25°C Ripple rejection ratio RR VI = 7.78 to 9.78V, f = 120Hz Minimum input/output voltage difference 1 VDIF(min)1 VI = 6.3V, IO = 50mA, Tj = 25°C 0.12 0.25 V Minimum input/output voltage difference 2 VDIF(min)2 VI = 6.3V, IO = 100mA, Tj = 25°C 0.26 0.48 V Output noise voltage Output voltage temperature coefficient IO = 0 to 100mA, Tj = 25°C 55 65 dB Vno f = 10Hz to 100kHz 120 µV ∆VO/Ta Tj = −30 to +125°C 0.46 mV/°C Note 1) The specified condition Tj = 25°C means that the test should be carried out within so short a test time (within 10ms) that the characteristic value drift due to the chip junction temperature rise can be ignored. Note 2) Unless otherwise specified, VI = 8V, IO = 50mA and CO = 10µF • AN77L08, AN77L08M (8V, 100mA type) Parameter Symbol Output voltage VO Line regulation REGIN Load regulation REGL Bias current under no load IBias Conditions Tj = 25°C Min 7.68 VI = 8.82 to 18.82V, Tj = 25°C Typ Max Unit 8 8.32 V 5 80 mV IO = 0 to 100mA, Tj = 25°C 12 80 mV IO = 0mA, Tj = 25°C 1.1 1.6 mA 3 5 mA 1.5 5 mA Bias current fluctuation to load ∆IBias IO = 0 to 100mA, Tj = 25°C Bias current before regulation start Irush VI = 7.2V, IO = 0mA, Tj = 25°C Ripple rejection ratio RR VI = 8.82 to 10.82V, f = 120Hz 53 63 dB Minimum input/output voltage difference 1 VDIF(min)1 VI = 7.2V, IO = 50mA, Tj = 25°C 0.12 0.25 Minimum input/output voltage difference 2 VDIF(min)2 VI = 7.2V, IO = 100mA, Tj = 25°C 0.27 0.51 Vno f = 10Hz to 100kHz 135 µV ∆VO/Ta Tj = −30 to +125°C 0.53 mV/°C Output noise voltage Output voltage temperature coefficient V V Note 1) The specified condition Tj = 25°C means that the test should be carried out within so short a test time (within 10ms) that the characteristic value drift due to the chip junction temperature rise can be ignored. Note 2) Unless otherwise specified, VI = 9V, IO = 50mA and CO = 10µF • AN77L09, AN77L09M (9V, 100mA type) Parameter Symbol Conditions Tj = 25°C V mV IO = 0 to 100mA, Tj = 25°C 13 90 mV IO = 0mA, Tj = 25°C 1.2 1.7 mA 3 5 mA 1.5 5 mA VI = 9.86 to 19.86V, Tj = 25°C Load regulation REGL Bias current fluctuation to load ∆IBias Bias current before regulation start Irush VI = 8.1V, IO = 0mA, Tj = 25°C Ripple rejection ratio RR VI = 9.86 to 11.86V, f = 120Hz Minimum input/output voltage difference 1 VDIF(min)1 VI = 8.1V, IO = 50mA, Tj = 25°C 0.13 0.25 Minimum input/output voltage difference 2 VDIF(min)2 0.53 Output noise voltage Output voltage temperature coefficient Unit 90 REGIN IBias Max 6 Line regulation 8.64 Typ 9.36 VO Bias current under no load Min 9 Output voltage IO = 0 to 100mA, Tj = 25°C 52 62 dB V VI = 8.1V, IO = 100mA, Tj = 25°C 0.28 Vno f = 10Hz to 100kHz 150 µV ∆VO/Ta Tj = −30 to +125°C 0.6 mV/°C V Note 1) The specified condition Tj = 25°C means that the test should be carried out within so short a test time (within 10ms) that the characteristic value drift due to the chip junction temperature rise can be ignored. Note 2) Unless otherwise specified, VI = 10V, IO = 50mA and CO = 10µF SFF00004CEB 5 AN77Lxx/AN77LxxM Series ■ Electrical Characteristics at Ta = 25°C (continued) • AN77L10, AN77L10M (10V, 100mA type) Parameter Symbol Output voltage VO Line regulation REGIN Load regulation REGL Bias current under no load IBias Conditions Tj = 25°C Min 9.6 Typ Max Unit 10 10.4 V 7 100 mV IO = 0 to 100mA, Tj = 25°C 14 100 mV IO = 0mA, Tj = 25°C 1.2 1.7 mA 3 5 mA 1.5 5 mA VI = 10.9 to 20.9V, Tj = 25°C Bias current fluctuation to load ∆IBias Bias current before regulation start Irush VI = 9.0V, IO = 0mA, Tj = 25°C Ripple rejection ratio RR VI = 10.9 to 12.9V, f = 120Hz Minimum input/output voltage difference 1 VDIF(min)1 VI = 9.0V, IO = 50mA, Tj = 25°C 0.13 0.25 V Minimum input/output voltage difference 2 VDIF(min)2 VI = 9.0V, IO = 100mA, Tj = 25°C 0.29 0.55 V Output noise voltage Output voltage temperature coefficient IO = 0 to 100mA, Tj = 25°C 50 60 dB Vno f = 10Hz to 100kHz 165 µV ∆VO/Ta Tj = −30 to +125°C 0.67 mV/°C Note 1) The specified condition Tj = 25°C means that the test should be carried out within so short a test time (within 10ms) that the characteristic value drift due to the chip junction temperature rise can be ignored. Note 2) Unless otherwise specified, VI = 11V, IO = 50mA and CO = 10µF • AN77L12, AN77L12M (12V, 100mA type) Parameter Symbol Output voltage VO Line regulation REGIN Load regulation REGL Bias current under no load IBias Conditions Tj = 25°C Min 11.52 Typ Max Unit 12 12.48 V 8 120 mV IO = 0 to 100mA, Tj = 25°Cv 15 120 mV IO = 0mA, Tj = 25°C 1.4 1.9 mA 3 5 mA 1.5 5 mA VI = 12.98 to 22.98V, Tj = 25°C Bias current fluctuation to load ∆IBias IO = 0 to 100mA, Tj = 25°C Bias current before regulation start Irush VI = 10.8V, IO = 0mA, Tj = 25°C Ripple rejection ratio RR VI = 12.98 to 14.98V, f = 120Hz 48 58 dB Minimum input/output voltage difference 1 VDIF(min)1 VI = 10.8V, IO = 50mA, Tj = 25°C 0.13 0.25 Minimum input/output voltage difference 2 VDIF(min)2 VI = 10.8V, IO = 100mA, Tj = 25°C 0.31 0.6 Vno f = 10Hz to 100kHz 190 µV ∆VO/Ta Tj = −30 to +125°C 0.8 mV/°C Output noise voltage Output voltage temperature coefficient V V Note 1) The specified condition Tj = 25°C means that the test should be carried out within so short a test time (within 10ms) that the characteristic value drift due to the chip junction temperature rise can be ignored. Note 2) Unless otherwise specified, VI = 13V, IO = 50mA and CO = 10µF 6 SFF00004CEB AN77Lxx/AN77LxxM Series ■ Main Characteristics Input/output characteristic VO VI Line regulation VO VI Rush current (under no load) II VI 3 AN77L03/M IO = 50mA AN77L03/M IO = 50mA AN77L03/M IO = 0A 4 3 2 3.02 Input current II (mA) Output voltage VO (V) Output voltage VO (V) 5 3.01 3.00 2.99 2 1 1 2.98 0 0 1 2 3 4 0 5 0 10 20 2 3 4 5 Input voltage VI (V) Bias current IBias IO Load regulation VO IO Overcurrent limit characteristic VO IO AN77L03/M VI = 4V 3 2 1 Output voltage VO (V) 4 3.01 3.00 2.99 2.98 50 0 100 AN77L03/M VI = 4V IO (short) = 200mA (typ.) 5 3.02 Output voltage VO (V) Bias current IBias (mA) 1 Input voltage VI (V) 5 1 0 Input voltage VI (V) AN77L03/M VI = 4V 0 0 30 4 3 2 1 0 50 0 100 0 100 200 300 Output current IO (mA) Output current IO (mA) Minimum input/output voltage difference VDIF(min) IOUT Ripple rejection ratio RR f Output voltage temperature characteristic VO Ta 100 AN77L03/M VI = 2.88V 0.4 0.3 0.2 0.1 0 0 50 Output current IO (mA) 100 AN77L03/M IO = 50mA 60 40 AN77L03/M VI = 4V IO = 0mA 3.10 80 Output voltage VO (V) 0.5 Ripple rejection ratio RR ( dB) Minimum input/output voltage difference VDIF(min) (V) Output current IO (mA) 3.00 20 0 10 100 1k 10k Frequency f (Hz) SFF00004CEB 100k 2.90 −25 0 25 50 75 Ambient temperature Ta (°C) 7 AN77Lxx/AN77LxxM Series ■ Main Characteristics (continued) Power dissipation PD Ta (AN77Lxx series) Power dissipation PD Ta (AN77LxxM series) 1.0 Independent IC without a heat sink Rth(j-a) = 190°C/W PD = 658mW (25°C) 0.5 0 0 25 50 75 85 100 125 Ambient temperature Ta (°C) 150 Power dissipation PD (W) Power dissipation PD (W) 1.0 Mounted on standard board (glass epoxy: 20 mm × 20 mm × t1.7mm with Cu foil of 1cm2 or more) 0.5 0 0 25 50 75 85 100 125 150 Ambient temperature Ta (°C) ■ Usage Notes Not required (1) 3 VI 1 (2) + − CO 10µF 2 CI 0.33µF VO (3) Note) The number in ( ) shows the pin number for the AN77Lxx series. 50 ; ;; ;; ;; ;; 2. Short-circuit between the output pin and the GND pin Because there is no in-built protection circuit in the AN77Lxx/ AN77LxxM series, they have the drooping characteristics as shown in the "■ Main Characteristics, Overcurrent limit characteristics". When your use under a high voltage happens to cause any short-circuit between the output pin (pin 1) and the GND pin (pin 2), the IC is likely to be broken. (AN77LxxM series) Equivalent series resistance ESR (Ω) 1. Input short-circuit protection circuit For the conventional Matsushita 3-pin regulators (such as of the AN80xx series), when DC input pin (pin 3) is short-circuited with GND pin (pin 2) in the normal operation condition, the potential of output pin (pin 1) becomes higher than that of DC input pin and the electric charges which is charged in output capacitor CO flows in the input side, having resulted in the breakage of elements. In the above case, the common silicon diode is connected as shown in the right figure (the dotted line). However, for the AN77Lxx/AN77LxxM series, since the protection circuit, which protects the elements from the discharging current, is incorporated in the internal circuit, the protection diode is not required. 3. Capacitor for external compensation In order to secure the stability, the capacitor of 10µF is required in the output side and it should be added as near to output pin (pin 1) and GND pin (pin 2) as possible. When it is used under low temperature, oscillation may occur due to the decrease of the aluminum electrolytic capacitor's capacitance and an increase of ESR. For the AN77Lxx/AN77LxxM series, it is recommended that the tantalum capacitor or aluminum electrolytic capacitor whose equivalent serial resistance with temperature characteristics within the recommended range specified in the right figure should be used. 8 SFF00004CEB 40 30 20 Recommended range 10 0 20 40 60 80 Output current IO (mA) 100 AN77Lxx/AN77LxxM Series ■ Application Circuit Example VI VO AN77Lxx/ AN77LxxM series + 0.33µF − 10µF • For the AN77Lxx/AN77LxxM series, the gain inside the IC is set high to improve the performance. For the reason, use the capacitor of 10µF or more when the power line in the output side is long. In addition, install the capacitor in the output side as near as possible to the IC. ■ New Package Dimensions (Unit: mm) • SSIP003-P-0000S (Lead-free package) 4.00±0.20 (1.00) (1.00) 5.00±0.20 5.00±0.20 0.60±0.15 1 1.27 2.30±0.20 0.40+0.10 -0.05 13.30±0.50 0.40±0.10 3 1.27 • HSIP003-P-0000Q (Lead-free package) 1.00+0.10 -0.20 2.50±0.10 1 0.40+0.10 -0.05 1.50 3 0.40+0.10 -0.05 0.50+0.10 -0.05 0.15 M 0.42+0.10 -0.05 (0.75) 1.50±0.10 3.00 2.65±0.10 0.10 (0.40) 4.00+0.25 -0.20 4.50±0.10 1.55±0.20 SFF00004CEB 9 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the product or technologies as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: • Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. • Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd. 2002 JUL