SiC Silicon Carbide Diode thin Q! T M S iC Sc ho ttk y Dio de 1200V SiC Schottky Diode IDW 30S120 Final Da ta sheet Rev. 2.0,<2012-03-23> Po wer Ma nage m ent & M ulti m ark et thinQ!™ SiC Schottky Diode 1 IDW30S120 Description The 1200V family of Infineon SiC Schottky diodes has emerged over the years as the industry standard and is now being extended with the IDWxxS120 product family in the TO247 package. The very good thermal characteristics of the TO247 in combination with the low Vf of the 1200V diodes make it particularly suitable in power applications where relatively high currents are demanded and utmost efficiency is required. With the introduction of this package, Infineon now offers a current capability of up to 30A in the 1200V range. 1 2 3 Features Revolutionary semiconductor material - Silicon Carbide Benchmark switching behavior No reverse recovery/ No forward recovery Temperature independent switching behavior High surge current capability Pb-free lead plating; RoHS compliant 1) Qualified according to JEDEC for target applications Optimized for high temperature operation 1 2 CASE 3 Benefits System efficiency improvement over Si diodes System cost / size savings due to reduced cooling requirements Enabling higher frequency / increased power density solutions Higher system reliability due to lower operating temperatures Reduced EMI Applications SMPS e.g.; CCM PFC Solar applications; UPS; Motor Drives Table 1 Key Performance Parameters Parameter Value (leg/device) Unit VDC 1200 V QC @ VR=400V 55/110 nC IF @ Tc < 135°C 15/30 A Table 2 Pin 1 A Pin Definition Pin 2 Pin 3 C A Type / ordering Code IDW30S120 Package PG-TO247-3 Marking D30S120 Related links www.infineon.com/sic 1) J-STD20 and JESD22 Final Data Sheet 2 Rev. 2.0, 2012-03-23 thinQ!TM SiC Schottky Diode IDW30S120 Table of contents Table of Contents 1 Description .......................................................................................................................................... 2 2 Maximum ratings ................................................................................................................................ 4 3 Thermal characteristics ..................................................................................................................... 4 4 Electrical characteristics ................................................................................................................... 5 5 Electrical characteristics diagrams .................................................................................................. 6 6 Package outlines ................................................................................................................................ 9 7 Revision History ............................................................................................................................... 10 Final Data Sheet 3 Rev. 2.0, 2012-03-23 thinQ!TM SiC Schottky Diode IDW30S120 Maximum ratings 2 Table 3 Parameter Maximum ratings Maximum ratings Symbol Continuous forward current IF Values (leg/device) Min. Typ. – – Max. 15/30 Surge non-repetitive forward current, IF,SM sine halfwave – – 73/146 – – 58/116 IF,max – – 389/778 – 27/106 Non-repetitive peak forward current ∫ i²dt i²t value – – – 17/68 Repetitive peak reverse voltage VRRM – – 1200 Diode dv/dt ruggedness dv/dt – – 50 Power dissipation Ptot – – Operating and storage temperature Tj;Tstg -55 – Mounting torque 3 Table 4 Parameter Unit Note/Test Condition TC < 135°C, D=1 A TC = 25°C, tp=10 ms TC = 150°C, tp=10 ms TC = 25°C, tp=10 µs A²s TC = 25°C, tp=10 ms TC = 150°C, tp=10 ms V VR=0..480 V – V/ns 150/300 W 175 °C – 60 M3 and M3.5 screws Ncm TC = 25°C Thermal characteristics Thermal characteristics TO-247-3 Symbol Values (leg/device) Min. Typ. Unit Note/Test Condition Max. 1.0/0.5 Thermal resistance, junction-case RthJC – – Thermal resistance, junctionambient RthJA – – 62 K/W leaded Tsold Soldering temperature, wavesoldering only allowed at leads – – 260 °C 1.6mm (0.063 in.) from case for 10 s Final Data Sheet 4 Rev. 2.0, 2012-03-23 thinQ!TM SiC Schottky Diode IDW30S120 Electrical characteristics 4 Table 5 Parameter Electrical characteristics Static characteristics Symbol Values (leg/device) Min. Typ. Max. – 1.5 – 1.8 – 2.4 15/30 – 305/610 – 30/60 1500/3000 DC blocking voltage VDC 1200 Diode forward voltage VF – – Reverse current Table 6 Parameter IR AC characteristics Symbol Total capacitive charge Qc Unit Values (leg/device) IR = 0.61 mA, Tj = 25°C V Typ. Max. – 55/110 – µA nC 84/168 Total Capacitance Final Data Sheet C – 870/1740 – – 75/150 – – 60/120 – 5 IF= 30 A, Tj=25°C IF= 30 A, Tj=150°C Unit Min. Note/Test Condition pF VR=1200 V, Tj=25°C VR=1200 V, Tj=150°C Note/Test Condition VR=400 V, di/dt=200A/µs, IF≤IF,MAX, Tj=150°C. VR=1000 V, di/dt=200A/µs, IF≤IF,MAX, Tj=150°C. VR=1 V, f=1 MHz VR=300 V, f=1 MHz VR=600 V, f=1 MHz Rev. 2.0, 2012-03-23 thinQ!TM SiC Schottky Diode IDW30S120 Electrical characteristics diagrams 5 Electrical characteristics diagrams Table 7 Power dissipation Typical forward characteristics (per device) 300 60 100°C 250 per device -55°C per leg 200 40 150 IF [ A] Ptot[W] 25°C 50 30 150°C 100 20 50 10 0 25 50 75 100 125 150 175°C 0 175 0 0.5 1 1.5 TC[°C] 2 2.5 3 3.5 4 4.5 VF [V] Ptot=f(TC); RthJC,max IF=f(VF); tp=200 µs; parameter: Tj Table 8 Diode forward current (per leg) Diode forward current (per device) 120 250 0.1 0.1 0.3 100 0.3 0.5 0.5 200 0.7 0.7 1 80 1 IF[A] IF[A] 150 60 100 40 50 20 0 0 25 50 75 100 125 150 175 25 TC[°C] 75 100 125 150 175 TC[°C] IF =f(TC); Tj≤175°C; RthJC,max; parameter D=duty cycle Final Data Sheet 50 6 IF=f(TC); Tj≤175°C; RthJC,max ; parameter D=duty cycle Rev. 2.0, 2012-03-23 thinQ!TM SiC Schottky Diode IDW30S120 Electrical characteristics diagrams Table 9 Typ. capacitance charge vs. current slope 1) Typ. reverse current vs. reverse voltage (per leg) (per leg) 1.E-4 50 1.E-5 40 1.E-6 IR [A] QC[nC] 60 30 175°C 150°C 100°C 1.E-7 20 25°C 1.E-8 10 0 100 -55°C 1.E-9 300 500 700 200 900 400 600 800 1000 1200 VR [V] dIF/dt [A/µs] QC=f(diF/dt); VR=400V; Tj=150°C; IF≤IF,max; per device IR=f(VR); parameter: Tj; per device the values double the values double 1) Only capacitive charge, guaranteed by design. Table 10 Max. transient thermal impedance (per leg) Max. transient thermal impedance (per device) 1 0.5 0.2 0.1 0.05 0.02 0.01 single pulse 0.1 0.01 1.E-06 1.E-03 Zth,jc [K/W] Zth,jc [K/W] 1 0.01 1.E-06 1.E+00 tp [s] 1.E-03 1.E+00 tp [s] Zth,jc=f(tP); parameter: D=tP/T Final Data Sheet 0.5 0.2 0.1 0.05 0.02 0.01 single pulse 0.1 Zth,jc=f(tP); parameter: D=tP/T 7 Rev. 2.0, 2012-03-23 thinQ!TM SiC Schottky Diode IDW30S120 Electrical characteristics diagrams Table 11 Typ. capacitance stored energy Typ. capacitance vs. reverse voltage (per leg) (per leg) 1200 45 40 1000 35 800 25 C [pF] EC[µJ] 30 20 600 400 15 10 200 5 0 0 0 200 400 600 800 1000 0.1 1200 10 100 1000 VR [V] VR [V] EC=f(VR); per device the values double Final Data Sheet 1 C=f(VR); Tj=25°C; f=1 MHz; per device the values double 8 Rev. 2.0, 2012-03-23 thinQ!TM SiC Schottky Diode IDW30S120 Package outlines 6 Figure 1 Package outlines Outlines TO-247, dimensions in mm/inches Final Data Sheet 9 Rev. 2.0, 2012-03-23 thinQ!TM SiC Schottky Diode IDW30S120 Revision History 7 Revision History TM thinQ! SiC Schottky Diode Revision History: 2012-03-23, Rev. 2.0 Previous Revision: Revision Subjects (major changes since last version) We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: [email protected] Edition 2012-03-23 Published by Infineon Technologies AG 81726 Munich, Germany © 2012 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Final Data Sheet 10 Rev. 2.0, 2012-03-23 w w w . i n f i n e o n . c o m Published by Infineon Technologies AG