IDL02G65C5 Data Sheet (722 KB, EN)

SiC
Silicon Carbide Diode
5 t h Ge ner ation thin Q! T M
650V SiC Schottky Diode
IDL02G65C5
Final Da ta Sh eet
Rev. 2.0, 2013-12-05
Po wer Ma nage m ent & M ulti m ark et
5th Generation thinQ!™ SiC Schottky Diode
1
IDL02G65C5
ThinPAK 8x8
Description
ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC
Schottky Barrier diodes. The Infineon proprietary diffusion soldering process,
already introduced with G3 is now combined with a new, more compact design and
thin-wafer technology. The result is a new family of products showing improved
efficiency over all load conditions, resulting from both the improved thermal
characteristics and a lower figure of merit (Qc x Vf).
The new thinQ!™ Generation 5 has been designed to complement our 650V
CoolMOS™ families: this ensures meeting the most stringent application
requirements in this voltage range.
Features









Bottom view
3,4
5
Revolutionary semiconductor material - Silicon Carbide
Benchmark switching behavior
No reverse recovery/ No forward recovery
Temperature independent switching behavior
High surge current capability
Pb-free lead plating; RoHS compliant
1)
Qualified according to JEDEC for target applications
2)
Breakdown voltage tested at 4.5 mA
Optimized for high temperature operation
Benefits





System efficiency improvement over Si diodes
System cost / size savings due to reduced cooling requirements
Enabling higher frequency / increased power density solutions
Higher system reliability due to lower operating temperatures
Reduced EMI
Applications



Switch mode power supply
Power factor correction
Solar inverter
Related Links
http://www.infineon.com/sic
ThinPAK Webpage
ThinPAK Application Note
Table 1
Key Performance Parameters
Parameter
Value
Unit
VDC
650
V
QC; VR=400V
4
nC
EC; VR=400V
0.8
µJ
IF @ TC < 155°C
2
A
Table 2
Pin 1
n.c.
Pin Definition
Pin 2
Pin 3
n.c.
A
Type / ordering Code
IDL02G65C5
Pin 4
A
Pin 5
C
Package
PG-VSON-4
Marking
D0265C5
1) J-STD20 and JESD22
2) All devices tested under avalanche conditions for a time periode of 10ms
Final Data Sheet
2
Rev. 2.0, 2013-12-05
5th Generation thinQ!TM SiC Schottky Diode
IDL02G65C5
Table of contents
Table of Contents
1
Description .......................................................................................................................................... 2
2
Maximum ratings ................................................................................................................................ 4
3
Thermal characteristics ..................................................................................................................... 4
4
Electrical characteristics ................................................................................................................... 5
5
Electrical characteristics diagrams .................................................................................................. 6
6
Simplified Forward Characteristics Model ...................................................................................... 8
7
Package outlines ................................................................................................................................ 9
8
Revision History ............................................................................................................................... 10
Final Data Sheet
3
Rev. 2.0, 2013-12-05
5th Generation thinQ!TM SiC Schottky Diode
IDL02G65C5
Maximum ratings
2
Table 3
Parameter
Maximum ratings
Maximum ratings
Symbol
Values
Unit
Min.
Typ.
–
–
Max.
2
Surge non-repetitive forward current, IF,SM
sine halfwave
–
–
21
–
–
13
Non-repetitive peak forward current
IF,max
–
–
138
i²t value
∫ i²dt
–
–
2.3
Continuous forward current
IF
Note/Test Condition
TC < 135°C, D=1
A
TC = 25°C, tp=10 ms
TC = 150°C, tp=10 ms
TC = 25°C, tp=10 µs
A²s
TC = 25°C, tp=10 ms
–
–
0.9
Repetitive peak reverse voltage
VRRM
–
–
V
Tj = 25°C
Diode dv/dt ruggedness
dv/dt
–
–
650
100
V/ns
VR=0..480 V
Power dissipation
Ptot
–
–
46
W
TC = 25°C
-55
–
150
°C
Operating and storage temperature
3
Table 4
Parameter
Tj;Tstg
TC = 150°C, tp=10 ms
Thermal characteristics
Thermal characteristics
Symbol
Values
Min.
Thermal resistance, junction-case
RthJC
–
Typ.
2.1
Thermal resistance, junctionambient
RthJA
–
–
Unit
Note/Test Condition
Max.
2.7
45
K/W
SMD version, device on
1)
PCB, 6cm² cooling area
2
1) Device on 40mm*40mm*1.5mm one layer epoxy PCB FR4 with 6cm copper area (thickness 70μm) for drain connection.
PCB is vertical without air stream cooling.
Final Data Sheet
4
Rev. 2.0, 2013-12-05
5th Generation thinQ!TM SiC Schottky Diode
IDL02G65C5
Electrical characteristics
4
Table 5
Parameter
Electrical characteristics
Static characteristics
Symbol
DC blocking voltage
Diode forward voltage
Reverse current
Table 6
Parameter
Values
Unit
Note/Test Condition
VDC
Min.
650
Typ.
–
Max.
–
VF
–
1.5
1.7
–
1.8
2.1
IF= 2 A, Tj=150°C
–
0.1
35
VR=650 V, Tj=25°C
–
0.02
12
–
0.4
240
IR
IR= 0.035 mA, Tj=25°C
V
µA
IF= 2 A, Tj=25°C
VR=600 V, Tj=25°C
VR=650 V, Tj=150°C
AC characteristics
Symbol
Values
Min.
Typ.
4
Unit
Total capacitive charge
Qc
–
Total Capacitance
C
–
70
–
–
9.1
–
–
8.9
–
Final Data Sheet
5
Note/Test Condition
Max.
nC
VR=400 V, di/dt=200A/µs,
IF≤IF,MAX, Tj=150°C.
VR=1 V, f=1 MHz
pF
VR=300 V, f=1 MHz
VR=600 V, f=1 MHz
Rev. 2.0, 2013-12-05
5th Generation thinQ!TM SiC Schottky Diode
IDL02G65C5
Electrical characteristics diagrams
5
Electrical characteristics diagrams
Table 7
Power dissipation
Maximal diode forward current
30
50
0.1
0.3
0.5
0.7
1
45
25
40
35
20
IF [A]
30
Ptot [W]
25
15
20
10
15
10
5
5
0
0
25
50
75
100
125
25
150
50
75
100
Tc [°C]
Tc [°C]
125
150
IF=f(TC); RthJC,max; Tj≤150°C; parameter D=duty cycle
Ptot=f(TC); RthJC,max
Table 8
Typical forward characteristics
Typical forward characteristics in surge current
4
20
-55 C
18
3.5
25 C
16
-55 C
3
14
100 C
25 C
12
2
IF [A]
IF [A]
2.5
150 C
100 C
10
8
1.5
6
1
4
0.5
150 C
2
0
0
0
0.5
1
1.5
VF [V]
2
2.5
0
IF=f(VF); tp=200 µs; parameter: Tj
Final Data Sheet
1
2
3
VF [V]
4
5
6
IF=f(VF); tp=200 µs; parameter: Tj
6
Rev. 2.0, 2013-12-05
5th Generation thinQ!TM SiC Schottky Diode
IDL02G65C5
Electrical characteristics diagrams
Table 9
Typ. capacitance charge vs. current slope
1)
Typ. reverse current vs. reverse voltage
4.5
1.E-05
4
3.5
1.E-06
2.5
IR [A]
QC[nC]
3
2
1.E-07
1.5
150 C
1.E-08
1
100 C
0.5
0
100
300
500
700
1.E-09
100
900
200
300 400
VR [V]
-55 C
25 C
500
600
dIF/dt [A/µs]
QC=f(dIF/dt); Tj=150°C; VR=400 V; IF≤IF,max
IR=f(VR); parameter: Tj;
1) Only capacitive charge, guaranteed by design.
Table 10
Max. transient thermal impedance
Typ. capacitance vs. reverse voltage
90
10
80
70
60
1
C [pF]
Zthjc [K/W]
50
0.5
0.2
0.1
0.1
40
30
0.05
0.02
20
0.01
Single Pulse
10
0.01
1E-6
0
1E-3
tp [s]
0
1E0
10
100
1000
VR [V]
Zth,jc=f(tP); parameter: D=tP/T
Final Data Sheet
1
C=f(VR); Tj=25°C; f=1 MHz
7
Rev. 2.0, 2013-12-05
5th Generation thinQ!TM SiC Schottky Diode
IDL02G65C5
Electrical characteristics diagrams
Table 11
Typ. capacitance stored energy
2
1.8
1.6
EC[µJ]
1.4
1.2
1
0.8
0.6
0.4
0.2
0
0
200
400
600
VR [V]
EC=f(VR)
6
Simplified Forward Characteristics Model
Table 12
Equivalent forward current curve
Mathematical Equation
VF  VTH  RDIFF  I F
VTH T j   0.001  T j  1.04 V
RDIFF T j   6.42 10-6  T j  6.42 10- 4  T j  0.232 
IF [A]
2
1/Rdiff
Vth
VF [V]
VF=f(IF)
Final Data Sheet
Tj in °C; -55°C < Tj < 150°C; IF < 4 A
8
Rev. 2.0, 2013-12-05
5th Generation thinQ!TM SiC Schottky Diode
IDL02G65C5
Package outlines
7
Figure 1
Package outlines
Outlines ThinPAK 8x8, dimensions in mm/inches
Final Data Sheet
9
Rev. 2.0, 2013-12-05
5th Generation thinQ!TM SiC Schottky Diode
IDL02G65C5
Revision History
8
Revision History
th
TM
5 Generation thinQ!
SiC Schottky Diode
Revision History: 2013-12-05, Rev. 2.0
Previous Revision:
Revision
Subjects (major changes since last version)
2.0
Release of the final data sheet
We Listen to Your Comments
Any information within this document that you feel is wrong, unclear or missing at all?
Your feedback will help us to continuously improve the quality of this document.
Please send your proposal (including a reference to this document) to: [email protected]
Edition 2013-05-13
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2013 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infineon Technologies hereby disclaims any and all
warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual
property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
The Infineon Technologies component described in this Data Sheet may be used in life-support devices or
systems and/or automotive, aviation and aerospace applications or systems only with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the
failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be implanted in the
human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to
assume that the health of the user or other persons may be endangered.
Final Data Sheet
10
Rev. 2.0, 2013-12-05
w w w . i n f i n e o n . c o m
Published by Infineon Technologies AG