SiC Silicon Carbide Diode 5 t h Ge ner ation thin Q! T M 650V SiC Schottky Diode IDL02G65C5 Final Da ta Sh eet Rev. 2.0, 2013-12-05 Po wer Ma nage m ent & M ulti m ark et 5th Generation thinQ!™ SiC Schottky Diode 1 IDL02G65C5 ThinPAK 8x8 Description ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. The Infineon proprietary diffusion soldering process, already introduced with G3 is now combined with a new, more compact design and thin-wafer technology. The result is a new family of products showing improved efficiency over all load conditions, resulting from both the improved thermal characteristics and a lower figure of merit (Qc x Vf). The new thinQ!™ Generation 5 has been designed to complement our 650V CoolMOS™ families: this ensures meeting the most stringent application requirements in this voltage range. Features Bottom view 3,4 5 Revolutionary semiconductor material - Silicon Carbide Benchmark switching behavior No reverse recovery/ No forward recovery Temperature independent switching behavior High surge current capability Pb-free lead plating; RoHS compliant 1) Qualified according to JEDEC for target applications 2) Breakdown voltage tested at 4.5 mA Optimized for high temperature operation Benefits System efficiency improvement over Si diodes System cost / size savings due to reduced cooling requirements Enabling higher frequency / increased power density solutions Higher system reliability due to lower operating temperatures Reduced EMI Applications Switch mode power supply Power factor correction Solar inverter Related Links http://www.infineon.com/sic ThinPAK Webpage ThinPAK Application Note Table 1 Key Performance Parameters Parameter Value Unit VDC 650 V QC; VR=400V 4 nC EC; VR=400V 0.8 µJ IF @ TC < 155°C 2 A Table 2 Pin 1 n.c. Pin Definition Pin 2 Pin 3 n.c. A Type / ordering Code IDL02G65C5 Pin 4 A Pin 5 C Package PG-VSON-4 Marking D0265C5 1) J-STD20 and JESD22 2) All devices tested under avalanche conditions for a time periode of 10ms Final Data Sheet 2 Rev. 2.0, 2013-12-05 5th Generation thinQ!TM SiC Schottky Diode IDL02G65C5 Table of contents Table of Contents 1 Description .......................................................................................................................................... 2 2 Maximum ratings ................................................................................................................................ 4 3 Thermal characteristics ..................................................................................................................... 4 4 Electrical characteristics ................................................................................................................... 5 5 Electrical characteristics diagrams .................................................................................................. 6 6 Simplified Forward Characteristics Model ...................................................................................... 8 7 Package outlines ................................................................................................................................ 9 8 Revision History ............................................................................................................................... 10 Final Data Sheet 3 Rev. 2.0, 2013-12-05 5th Generation thinQ!TM SiC Schottky Diode IDL02G65C5 Maximum ratings 2 Table 3 Parameter Maximum ratings Maximum ratings Symbol Values Unit Min. Typ. – – Max. 2 Surge non-repetitive forward current, IF,SM sine halfwave – – 21 – – 13 Non-repetitive peak forward current IF,max – – 138 i²t value ∫ i²dt – – 2.3 Continuous forward current IF Note/Test Condition TC < 135°C, D=1 A TC = 25°C, tp=10 ms TC = 150°C, tp=10 ms TC = 25°C, tp=10 µs A²s TC = 25°C, tp=10 ms – – 0.9 Repetitive peak reverse voltage VRRM – – V Tj = 25°C Diode dv/dt ruggedness dv/dt – – 650 100 V/ns VR=0..480 V Power dissipation Ptot – – 46 W TC = 25°C -55 – 150 °C Operating and storage temperature 3 Table 4 Parameter Tj;Tstg TC = 150°C, tp=10 ms Thermal characteristics Thermal characteristics Symbol Values Min. Thermal resistance, junction-case RthJC – Typ. 2.1 Thermal resistance, junctionambient RthJA – – Unit Note/Test Condition Max. 2.7 45 K/W SMD version, device on 1) PCB, 6cm² cooling area 2 1) Device on 40mm*40mm*1.5mm one layer epoxy PCB FR4 with 6cm copper area (thickness 70μm) for drain connection. PCB is vertical without air stream cooling. Final Data Sheet 4 Rev. 2.0, 2013-12-05 5th Generation thinQ!TM SiC Schottky Diode IDL02G65C5 Electrical characteristics 4 Table 5 Parameter Electrical characteristics Static characteristics Symbol DC blocking voltage Diode forward voltage Reverse current Table 6 Parameter Values Unit Note/Test Condition VDC Min. 650 Typ. – Max. – VF – 1.5 1.7 – 1.8 2.1 IF= 2 A, Tj=150°C – 0.1 35 VR=650 V, Tj=25°C – 0.02 12 – 0.4 240 IR IR= 0.035 mA, Tj=25°C V µA IF= 2 A, Tj=25°C VR=600 V, Tj=25°C VR=650 V, Tj=150°C AC characteristics Symbol Values Min. Typ. 4 Unit Total capacitive charge Qc – Total Capacitance C – 70 – – 9.1 – – 8.9 – Final Data Sheet 5 Note/Test Condition Max. nC VR=400 V, di/dt=200A/µs, IF≤IF,MAX, Tj=150°C. VR=1 V, f=1 MHz pF VR=300 V, f=1 MHz VR=600 V, f=1 MHz Rev. 2.0, 2013-12-05 5th Generation thinQ!TM SiC Schottky Diode IDL02G65C5 Electrical characteristics diagrams 5 Electrical characteristics diagrams Table 7 Power dissipation Maximal diode forward current 30 50 0.1 0.3 0.5 0.7 1 45 25 40 35 20 IF [A] 30 Ptot [W] 25 15 20 10 15 10 5 5 0 0 25 50 75 100 125 25 150 50 75 100 Tc [°C] Tc [°C] 125 150 IF=f(TC); RthJC,max; Tj≤150°C; parameter D=duty cycle Ptot=f(TC); RthJC,max Table 8 Typical forward characteristics Typical forward characteristics in surge current 4 20 -55 C 18 3.5 25 C 16 -55 C 3 14 100 C 25 C 12 2 IF [A] IF [A] 2.5 150 C 100 C 10 8 1.5 6 1 4 0.5 150 C 2 0 0 0 0.5 1 1.5 VF [V] 2 2.5 0 IF=f(VF); tp=200 µs; parameter: Tj Final Data Sheet 1 2 3 VF [V] 4 5 6 IF=f(VF); tp=200 µs; parameter: Tj 6 Rev. 2.0, 2013-12-05 5th Generation thinQ!TM SiC Schottky Diode IDL02G65C5 Electrical characteristics diagrams Table 9 Typ. capacitance charge vs. current slope 1) Typ. reverse current vs. reverse voltage 4.5 1.E-05 4 3.5 1.E-06 2.5 IR [A] QC[nC] 3 2 1.E-07 1.5 150 C 1.E-08 1 100 C 0.5 0 100 300 500 700 1.E-09 100 900 200 300 400 VR [V] -55 C 25 C 500 600 dIF/dt [A/µs] QC=f(dIF/dt); Tj=150°C; VR=400 V; IF≤IF,max IR=f(VR); parameter: Tj; 1) Only capacitive charge, guaranteed by design. Table 10 Max. transient thermal impedance Typ. capacitance vs. reverse voltage 90 10 80 70 60 1 C [pF] Zthjc [K/W] 50 0.5 0.2 0.1 0.1 40 30 0.05 0.02 20 0.01 Single Pulse 10 0.01 1E-6 0 1E-3 tp [s] 0 1E0 10 100 1000 VR [V] Zth,jc=f(tP); parameter: D=tP/T Final Data Sheet 1 C=f(VR); Tj=25°C; f=1 MHz 7 Rev. 2.0, 2013-12-05 5th Generation thinQ!TM SiC Schottky Diode IDL02G65C5 Electrical characteristics diagrams Table 11 Typ. capacitance stored energy 2 1.8 1.6 EC[µJ] 1.4 1.2 1 0.8 0.6 0.4 0.2 0 0 200 400 600 VR [V] EC=f(VR) 6 Simplified Forward Characteristics Model Table 12 Equivalent forward current curve Mathematical Equation VF VTH RDIFF I F VTH T j 0.001 T j 1.04 V RDIFF T j 6.42 10-6 T j 6.42 10- 4 T j 0.232 IF [A] 2 1/Rdiff Vth VF [V] VF=f(IF) Final Data Sheet Tj in °C; -55°C < Tj < 150°C; IF < 4 A 8 Rev. 2.0, 2013-12-05 5th Generation thinQ!TM SiC Schottky Diode IDL02G65C5 Package outlines 7 Figure 1 Package outlines Outlines ThinPAK 8x8, dimensions in mm/inches Final Data Sheet 9 Rev. 2.0, 2013-12-05 5th Generation thinQ!TM SiC Schottky Diode IDL02G65C5 Revision History 8 Revision History th TM 5 Generation thinQ! SiC Schottky Diode Revision History: 2013-12-05, Rev. 2.0 Previous Revision: Revision Subjects (major changes since last version) 2.0 Release of the final data sheet We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: [email protected] Edition 2013-05-13 Published by Infineon Technologies AG 81726 Munich, Germany © 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Final Data Sheet 10 Rev. 2.0, 2013-12-05 w w w . i n f i n e o n . c o m Published by Infineon Technologies AG