IDW15S120 Data Sheet (739 KB, EN)

SiC
Silicon Carbide Diode
thin Q! T M S iC Sc ho ttk y Dio de
1200V SiC Schottky Diode
IDW 15S120
Final Da ta sheet
Rev. 2.0,<2012-03-23>
Po wer Ma nage m ent & M ulti m ark et
thinQ!™ SiC Schottky Diode
1
IDW15S120
Description
The 1200V family of Infineon SiC Schottky diodes has emerged over the
years as the industry standard and is now being extended with the
IDWxxS120 product family in the TO247 package.
The very good thermal characteristics of the TO247 in combination with
the low Vf of the 1200V diodes make it particularly suitable in power
applications where relatively high currents are demanded and utmost
efficiency is required. With the introduction of this package, Infineon now
offers a current capability of up to 30A in the 1200V range.
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2
3
Features






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Revolutionary semiconductor material - Silicon Carbide
Benchmark switching behavior
No reverse recovery/ No forward recovery
Temperature independent switching behavior
High surge current capability
Pb-free lead plating; RoHS compliant
1)
Qualified according to JEDEC for target applications
Optimized for high temperature operation
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2
CASE
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Benefits



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System efficiency improvement over Si diodes
System cost / size savings due to reduced cooling requirements
Enabling higher frequency / increased power density solutions
Higher system reliability due to lower operating temperatures
Reduced EMI
Applications


SMPS; CCM PFC
Solar applications; UPS; Motor Drives
Table 1
Key Performance Parameters
Parameter
Value
Unit
VDC
1200
V
QC @ VR=400V
55
nC
IF @ Tc < 135°C
15
A
Table 2
Pin 1
n.c.
Pin Definition
Pin 2
Pin 3
C
A
Type / ordering Code
IDW15S120
Package
PG-TO247-3
Marking
D15S120
Related links
www.infineon.com/sic
1) J-STD20 and JESD22
Final Data Sheet
2
Rev. 2.0, 2012-03-23
thinQ!TM SiC Schottky Diode
IDW15S120
Table of contents
Table of Contents
1
Description .......................................................................................................................................... 2
2
Maximum ratings ................................................................................................................................ 4
3
Thermal characteristics ..................................................................................................................... 4
4
Electrical characteristics ................................................................................................................... 5
5
Electrical characteristics diagrams .................................................................................................. 6
6
Package outlines ................................................................................................................................ 8
7
Revision History ................................................................................................................................. 9
Final Data Sheet
3
Rev. 2.0, 2012-03-23
thinQ!TM SiC Schottky Diode
IDW15S120
Maximum ratings
2
Table 3
Parameter
Maximum ratings
Maximum ratings
Symbol
Continuous forward current
Values
Unit
Min.
Typ.
–
–
Max.
15
IF
Surge non-repetitive forward current, IF,SM
sine halfwave
–
–
73
–
–
58
IF,max
–
–
389
–
27
Non-repetitive peak forward current
∫ i²dt
i²t value
–
Note/Test Condition
TC < 135°C, D=1
A
TC = 25°C, tp=10 ms
TC = 150°C, tp=10 ms
TC = 25°C, tp=10 µs
A²s
TC = 25°C, tp=10 ms
–
–
17
Repetitive peak reverse voltage
VRRM
–
–
1200
V
Diode dv/dt ruggedness
dv/dt
–
–
50
V/ns
VR=0..480 V
–
150
W
TC = 25°C
-55
–
175
°C
–
–
60
Ncm
Power dissipation
Operating and storage temperature
–
Ptot
Tj;Tstg
Mounting torque
3
Table 4
Parameter
TC = 150°C, tp=10 ms
M3 and M3.5 screws
Thermal characteristics
Thermal characteristics TO-247-3
Symbol
Values
Min.
Unit
Thermal resistance, junction-case
RthJC
–
Typ.
–
Thermal resistance, junctionambient
RthJA
–
–
62
K/W
leaded
Tsold
Soldering temperature,
wavesoldering only allowed at leads
–
–
260
°C
1.6mm (0.063 in.) from
case for 10 s
Final Data Sheet
4
Max.
1.0
Note/Test Condition
Rev. 2.0, 2012-03-23
thinQ!TM SiC Schottky Diode
IDW15S120
Electrical characteristics
4
Table 5
Parameter
Electrical characteristics
Static characteristics
Symbol
Values
Unit
Min.
Typ.
Max.
–
1.8
DC blocking voltage
VDC
1200
Diode forward voltage
VF
–
–
1.5
–
2.4
–
–
15
305
–
30
1500
Reverse current
Table 6
Parameter
IR
Note/Test Condition
IR = 0.30 mA, Tj = 25°C
V
IF= 15 A, Tj=25°C
IF= 15 A, Tj=150°C
µA
VR=1200 V, Tj=25°C
VR=1200 V, Tj=150°C
AC characteristics
Total capacitive charge
Symbol
Qc
Values
Unit
Min.
Typ.
Max.
–
55
–
–
84
–
–
870
–
–
75
–
–
60
–
nC
Total Capacitance
Final Data Sheet
C
5
pF
Note/Test Condition
VR=400 V, di/dt=200A/µs,
IF≤IF,MAX, Tj=150°C.
VR=1000 V, di/dt=200A/µs,
IF≤IF,MAX, Tj=150°C.
VR=1 V, f=1 MHz
VR=300 V, f=1 MHz
VR=600 V, f=1 MHz
Rev. 2.0, 2012-03-23
thinQ!TM SiC Schottky Diode
IDW15S120
Electrical characteristics diagrams
5
Electrical characteristics diagrams
Table 7
Power dissipation
Diode forward current
160
120
140
100
0.1
0.3
0.5
0.7
120
1
80
IF[A]
Ptot[W]
100
80
60
60
40
40
20
20
0
0
25
50
75
100
125
150
25
175
50
75
100
125
150
175
TC[°C]
TC[°C]
IF=f(TC); Tj≤175°C; RthJC,max; parameter D=duty cycle
Ptot=f(TC); RthJC,max
Table 8
Typical forward characteristics
Typ. reverse current vs. reverse voltage
1.E-4
30
100°C
25°C
25
20
IR [A]
175°C
15
150°C
1.E-6
150°C
IF [ A]
175°C
1.E-5
-55°C
100°C
1.E-7
10
25°C
1.E-8
5
-55°C
1.E-9
0
200
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
600
800
1000
1200
VR [V]
VF [V]
IF=f(VF); tp=200 µs; RthJC,max ;parameter: Tj
Final Data Sheet
400
IR=f(VR); RthJC,max ; parameter: Tj
6
Rev. 2.0, 2012-03-23
thinQ!TM SiC Schottky Diode
IDW15S120
Electrical characteristics diagrams
Table 9
1)
Typ. capacitance charge vs. current slope
Max. transient thermal impedance
60
1
50
Zth,jc [K/W]
QC[nC]
40
30
0.5
0.2
0.1
0.05
0.02
0.01
single pulse
0.1
20
10
0
100
300
500
700
0.01
1.E-06
900
1.E-03
1.E+00
tp [s]
dIF/dt [A/µs]
QC=f(diF/dt); VR=400 V; Tj=150°C; IF≤IF,max
Zth,jc=f(tP); parameter: D=tP/T
1) Only capacitive charge, guaranteed by design.
Table 10
Typ. capacitance stored energy
Typ. capacitance vs. reverse voltage
1200
45
40
1000
35
800
25
C [pF]
EC[µJ]
30
20
600
400
15
10
200
5
0
0
0
200
400
600
800
1000
0.1
1200
10
100
1000
VR [V]
VR [V]
EC=f(VR)
Final Data Sheet
1
C=f(VR); Tj=25°C; f=1 MHz
7
Rev. 2.0, 2012-03-23
thinQ!TM SiC Schottky Diode
IDW15S120
Package outlines
6
Figure 1
Package outlines
Outlines TO-247, dimensions in mm/inches
Final Data Sheet
8
Rev. 2.0, 2012-03-23
thinQ!TM SiC Schottky Diode
IDW15S120
Revision History
7
Revision History
TM
thinQ!
SiC Schottky Diode
Revision History: 2012-03-23, Rev. 2.0
Previous Revision:
Revision
Subjects (major changes since last version)
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Edition 2012-03-23
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2012 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infineon Technologies hereby disclaims any and all
warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual
property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
The Infineon Technologies component described in this Data Sheet may be used in life-support devices or
systems and/or automotive, aviation and aerospace applications or systems only with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the
failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be implanted in the
human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to
assume that the health of the user or other persons may be endangered.
Final Data Sheet
9
Rev. 2.0, 2012-03-23
w w w . i n f i n e o n . c o m
Published by Infineon Technologies AG