MC74VHC00 Quad 2-Input NAND Gate The MC74VHC00 is an advanced high speed CMOS 2−input NAND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a buffer output which provides high noise immunity and stable output. The inputs tolerate voltages up to 7 V, allowing the interface of 5 V systems to 3 V systems. http://onsemi.com MARKING DIAGRAMS Features • • • • • • • • • • • • 14 High Speed: tPD = 3.7 ns (Typ) at VCC = 5 V Low Power Dissipation: ICC = 2 mA (Max) at TA = 25°C High Noise Immunity: VNIH = VNIL = 28% VCC Power Down Protection Provided on Inputs Balanced Propagation Delays Designed for 2 V to 5.5 V Operating Range Low Noise: VOLP = 0.8 V (Max) Pin and Function Compatible with Other Standard Logic Families Latchup Performance Exceeds 300 mA ESD Performance: HBM > 2000 V; Machine Model > 200 V Chip Complexity: 32 FETs or 8 Equivalent Gates These Devices are Pb−Free and are RoHS Compliant VCC B4 A4 Y4 B3 A3 Y3 14 13 12 11 10 9 8 SO−14 D SUFFIX CASE 751A VHC00G AWLYWW 1 14 TSSOP−14 DT SUFFIX CASE 948G A L, WL Y W, WW G, G VHC 00 ALYW G G 1 = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Device ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet. 1 2 3 4 5 6 7 A1 B1 Y1 A2 B2 Y2 GND Figure 1. Pinout: 14−Lead Packages (Top View) FUNCTION TABLE Inputs Output A B Y L L H H L H L H H H H L © Semiconductor Components Industries, LLC, 2014 September, 2014 − Rev. 7 1 Publication Order Number: MC74VHC00/D MC74VHC00 A1 B1 A2 B2 A3 B3 A4 B4 1 3 2 Y1 4 6 5 Y2 Y = AB 9 8 10 Y3 12 11 13 Y4 Figure 2. Logic Diagram MAXIMUM RATINGS Value Unit VCC Symbol Positive DC Supply Voltage Parameter −0.5 to +7.0 V VIN Digital Input Voltage −0.5 to +7.0 V VOUT DC Output Voltage −0.5 to VCC +0.5 V IIK Input Diode Current −20 mA IOK Output Diode Current $20 mA IOUT DC Output Current, per Pin $25 mA ICC DC Supply Current, VCC and GND Pins $75 mA PD Power Dissipation in Still Air 200 180 mW TSTG Storage Temperature Range −65 to +150 °C VESD ESD Withstand Voltage Human Body Model (Note 1) Machine Model (Note 2) Charged Device Model (Note 3) >2000 >200 N/A V ILATCH−UP Latch−Up Performance Above VCC and Below GND at 125°C (Note 4) $300 mA qJA Thermal Resistance, Junction to Ambient 143 164 °C/W SOIC Package TSSOP SOIC Package TSSOP Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Tested to EIA/JESD22−A114−A 2. Tested to EIA/JESD22−A115−A 3. Tested to JESD22−C101−A 4. Tested to EIA/JESD78 RECOMMENDED OPERATING CONDITIONS Symbol Characteristics Min Max Unit 2.0 5.5 V VCC DC Supply Voltage VIN DC Input Voltage 0 5.5 V VOUT DC Output Voltage 0 VCC V TA Operating Temperature Range, All Package Types −55 125 °C tr, tf Input Rise or Fall Time 0 0 100 20 ns/V VCC = 3.3 V + 0.3 V VCC = 5.0 V + 0.5 V Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability. http://onsemi.com 2 MC74VHC00 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ DC ELECTRICAL CHARACTERISTICS TA = 25°C VCC V Min High−Level Input Voltage 2.0 3.0 to 5.5 1.50 VCC x 0.7 VIL Low−Level Input Voltage 2.0 3.0 to 5.5 VOH High−Level Output Voltage Symbol Parameter VIH Test Conditions Vin = VIH or VIL IOH = − 50 mA Vin = VIH or VIL IOH = − 4 mA IOH = − 8 mA VOL Low−Level Output Voltage Vin = VIH or VIL IOL = 50 mA Typ Max TA = −40 to 85°C TA = −55 to +125°C Min Min 1.50 VCC x 0.7 0.50 VCC x 0.3 2.0 3.0 4.5 1.9 2.9 4.4 3.0 4.5 2.58 3.94 Max 2.0 3.0 4.5 2.0 3.0 4.5 0.0 0.0 0.0 Max 1.50 VCC x 0.7 Unit V 0.50 VCC x 0.3 0.50 VCC x 0.3 V V 1.9 2.9 4.4 1.9 2.9 4.4 2.48 3.80 2.40 3.70 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 Vin = VIH or VIL IOL = 4 mA IOL = 8 mA 3.0 4.5 0.36 0.36 0.44 0.44 0.55 0.55 V Iin Input Leakage Current Vin = 5.5 V or GND 0 to 5.5 $0.1 $1.0 $2.0 mA ICC Quiescent Supply Current Vin = VCC or GND 5.5 2.0 20 40 mA Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎ Î ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ AC ELECTRICAL CHARACTERISTICS (Input tr = tf = 3.0 ns) TA = 25°C Symbol Parameter tPLH, tPHL Propagation Delay, A or B to Y Cin Min Test Conditions TA = −40 to 85°C TA = −55 to +125°C Typ Max Min Max Min Max Unit ns VCC = 3.3 ± 0.3 V CL = 15 pF CL = 50 pF 5.5 8.0 7.9 11.4 1.0 1.0 9.5 13.0 1.0 1.0 10 14.5 VCC = 5.0 ± 0.5 V CL = 15 pF CL = 50 pF 3.7 5.2 5.5 7.5 1.0 1.0 6.5 8.5 1.0 1.0 7.0 9.5 4.0 10 Input Capacitance 10 10 pF Typical @ 25°C, VCC = 5.0 V CPD 19 Power Dissipation Capacitance (Note 5) pF 5. CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load. Average operating current can be obtained by the equation: ICC(OPR) = CPD VCC fin + ICC / 4 (per gate). CPD is used to determine the no−load dynamic power consumption; PD = CPD VCC2 fin + ICC VCC. NOISE CHARACTERISTICS (Input tr = tf = 3.0 ns, CL = 50 pF, VCC = 5.0 V, Measured in SOIC Package) TA = 25°C Symbol Characteristic Typ Max Unit VOLP Quiet Output Maximum Dynamic VOL 0.3 0.8 V VOLV Quiet Output Minimum Dynamic VOL − 0.3 − 0.8 V VIHD Minimum High Level Dynamic Input Voltage 3.5 V VILD Maximum Low Level Dynamic Input Voltage 1.5 V http://onsemi.com 3 MC74VHC00 TEST POINT VCC A or B OUTPUT 50% DEVICE UNDER TEST GND tPLH Y tPHL CL* 50% VCC *Includes all probe and jig capacitance Figure 3. Switching Waveforms Figure 4. Test Circuit INPUT Figure 5. Input Equivalent Circuit ORDERING INFORMATION Package Shipping† SOIC−14 (Pb−Free) 2500 / Tape & Reel MC74VHC00DTG TSSOP−14* (Pb−Free) 96 Units / Rail MC74VHC00DTR2G TSSOP−14* (Pb−Free) 2500 / Tape & Reel Device MC74VHC00DR2G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *This package is inherently Pb−Free. http://onsemi.com 4 MC74VHC00 PACKAGE DIMENSIONS SOIC−14 CASE 751A−03 ISSUE K D A B 14 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE PROTRUSION SHALL BE 0.13 TOTAL IN EXCESS OF AT MAXIMUM MATERIAL CONDITION. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD PROTRUSIONS. 5. MAXIMUM MOLD PROTRUSION 0.15 PER SIDE. 8 A3 E H L 1 0.25 M DETAIL A 7 B 13X M 0.25 M C A S B S DETAIL A h A e DIM A A1 A3 b D E e H h L M b X 45 _ M A1 C SEATING PLANE MILLIMETERS MIN MAX 1.35 1.75 0.10 0.25 0.19 0.25 0.35 0.49 8.55 8.75 3.80 4.00 1.27 BSC 5.80 6.20 0.25 0.50 0.40 1.25 0_ 7_ SOLDERING FOOTPRINT* 6.50 14X 1.18 1 1.27 PITCH 14X 0.58 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 5 INCHES MIN MAX 0.054 0.068 0.004 0.010 0.008 0.010 0.014 0.019 0.337 0.344 0.150 0.157 0.050 BSC 0.228 0.244 0.010 0.019 0.016 0.049 0_ 7_ MC74VHC00 PACKAGE DIMENSIONS TSSOP−14 CASE 948G ISSUE B 14X K REF 0.10 (0.004) 0.15 (0.006) T U M T U V S NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MOLD FLASH OR GATE BURRS SHALL NOT EXCEED 0.15 (0.006) PER SIDE. 4. DIMENSION B DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSION. INTERLEAD FLASH OR PROTRUSION SHALL NOT EXCEED 0.25 (0.010) PER SIDE. 5. DIMENSION K DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 (0.003) TOTAL IN EXCESS OF THE K DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. TERMINAL NUMBERS ARE SHOWN FOR REFERENCE ONLY. 7. DIMENSION A AND B ARE TO BE DETERMINED AT DATUM PLANE −W−. S S N 2X 14 L/2 0.25 (0.010) 8 M B −U− L PIN 1 IDENT. F 7 1 0.15 (0.006) T U N S DETAIL E K A −V− ÉÉÉ ÇÇÇ ÇÇÇ ÉÉÉ K1 J J1 SECTION N−N −W− C 0.10 (0.004) −T− SEATING PLANE D H G DETAIL E DIM A B C D F G H J J1 K K1 L M MILLIMETERS INCHES MIN MAX MIN MAX 4.90 5.10 0.193 0.200 4.30 4.50 0.169 0.177 −−− 1.20 −−− 0.047 0.05 0.15 0.002 0.006 0.50 0.75 0.020 0.030 0.65 BSC 0.026 BSC 0.50 0.60 0.020 0.024 0.09 0.20 0.004 0.008 0.09 0.16 0.004 0.006 0.19 0.30 0.007 0.012 0.19 0.25 0.007 0.010 6.40 BSC 0.252 BSC 0_ 8_ 0_ 8_ SOLDERING FOOTPRINT 7.06 1 0.65 PITCH 14X 0.36 14X 1.26 DIMENSIONS: MILLIMETERS ON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. 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