ONSEMI NLSF3T125_11

NLSF3T125
Quad Bus Buffer
with 3−State Control Inputs
The NLSF3T125 is a high speed CMOS quad bus buffer fabricated
with silicon gate CMOS technology. It achieves high speed operation
similar to equivalent Bipolar Schottky TTL while maintaining CMOS
low power dissipation.
The NLSF3T125 requires the 3−state control input (OE) to be set
High to place the output into the high impedance state.
The T125 inputs are compatible with TTL levels. This device can be
used as a level converter for interfacing 3.3 V to 5.0 V, because it has
full 5.0 V CMOS level output swings.
The NLSF3T125 input structures provide protection when voltages
between 0 V and 5.5 V are applied, regardless of the supply voltage.
The output structures also provide protection when VCC = 0 V. These
input and output structures help prevent device destruction caused by
supply voltage − input/output voltage mismatch, battery backup, hot
insertion, etc.
The internal circuit is composed of three stages, including a buffer
output which provides high noise immunity and stable output. The
inputs tolerate voltages up to 7.0 V, allowing the interface of 5.0 V
systems to 3.0 V systems.
Features
•
•
•
•
•
•
•
•
•
•
•
•
High Speed: tPD = 3.8 ns (Typ) at VCC = 5.0 V
Low Power Dissipation: ICC = 4.0 mA (Max) at TA = 25°C
TTL−Compatible Inputs: VIL = 0.8 V; VIH = 2.0 V
Power Down Protection Provided on Inputs
Balanced Propagation Delays
Designed for 2.0 V to 5.5 V Operating Range
Low Noise: VOLP = 0.8 V (Max)
Pin and Function Compatible with Other Standard Logic Families
Latchup Performance Exceeds 300 mA
ESD Performance: Human Body Model; > 2000 V,
Machine Model; > 200 V
Chip Complexity: 72 FETs or 18 Equivalent Gates
These Devices are Pb−Free and are RoHS Compliant
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1
QFN−16
CASE 485G
MARKING DIAGRAM
NLSF3
T125
ALYWG
G
NLSF3T125
A
L
Y
W
G
= Specific Device Code
= Assembly Location
= Wafer Lot
= Year
= Work Week
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping†
NLSF3T125MNR2G QFN−16 3000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
FUNCTION TABLE
NLSF3T125
Inputs
Output
A
OE
Y
H
L
H
L
L
L
X
H
Z
© Semiconductor Components Industries, LLC, 2011
June, 2011 − Rev. 5
1
Publication Order Number:
NLSF3T125/D
NLSF3T125
Active−Low Output Enables
16
A1
1
Y1
15
OE1
5
4
A2
Y2
3
OE2
7
8
A3
Y3
9
OE3
10
12
A4
Y4
13
OE4
Figure 1. Logic Diagram
OE1 VCC
A1
16
15
14
OE4
Exposed Pad (EP)
13
Y1
1
12
A4
NC
2
11
NC
OE2
3
10
Y4
A2
4
9
5
6
Y2
7
GND Y3
OE3
8
A3
Figure 2. QFN − 16 Pinout (Top View)
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MAXIMUM RATINGS
Symbol
Parameter
Value
Units
VCC
DC Supply Voltage
−0.5 to +7.0
V
Vin
DC Input Voltage
–0.5 to +7.0
V
Vout
DC Output Voltage
Output in 3−State
High or Low State
–0.5 to +7.0
–0.5 to VCC + 0.5
IIK
Input Diode Current
−20
mA
IOK
Output Diode Current (VOUT < GND; VOUT > VCC)
±20
mA
Iout
DC Output Current, per Pin
±25
mA
ICC
DC Supply Current, VCC and GND Pins
±75
mA
PD
Power Dissipation in Still Air
QFN Packages
500
Tstg
Storage Temperature
–65 to +150
V
mW
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress
ratings only. Functional operation above the Recommended Operating Conditions is not implied.
Extended exposure to stresses above the Recommended Operating Conditions may affect device
reliability.
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2
This device contains protection
circuitry to guard against damage
due to high static voltages or electric
fields. However, precautions must
be taken to avoid applications of any
voltage higher than maximum rated
voltages to this high−impedance circuit. For proper operation, Vin and
Vout should be constrained to the
range GND v (Vin or Vout) v VCC.
Unused inputs must always be
tied to an appropriate logic voltage
level (e.g., either GND or V CC ).
Unused outputs must be left open.
NLSF3T125
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RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Min
Max
Units
2.0
5.5
V
DC Input Voltage
0
5.5
V
DC Output Voltage
Output in 3−State
High or Low State
0
0
5.5
VCC
−40
+85
VCC
DC Supply Voltage
Vin
Vout
TA
Operating Temperature
tr, tf
Input Rise and Fall Time
VCC = 5.0 V ±0.5 V
0
V
°C
ns/V
20
DC ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Test Conditions
VCC
(V)
TA = 25°C
Min
VIH
Minimum
High−Level
Input Voltage
2.3 V ± 0.3 V
3.3 V ± 0.3 V
5.0 V ± 0.5 V
VIL
Maximum
Low−Level
Input Voltage
2.3 V ± 0.3 V
3.3 V ± 0.3 V
5.0 V ± 0.5 V
VOH
Minimum
High−Level
Output Voltage
VIN = VIH or VIL
VOL @ IOL, 50 mA
VIN = VIH or VIL
IOH = −50 mA
2.0
3.0
4.5
1.9
2.9
4.4
VIN = VIH or VIL
IOH = −2.0 mA
IOH = −4.0 mA
IOH = −8.0 mA
2.0
3.0
4.5
1.82
2.58
3.94
VOL @ IOL, 50 mA
VIN = VIH or VIL
IOL = 50 mA
2.0
3.0
4.5
VIN = VIH or VIL
IOL = 2.0 mA
IOL = 4.0 mA
IOL = 8.0 mA
VOL
Maximum
Low−Level
Output Voltage
VIN = VIH or VIL
Typ
TA 3 85°C
Max
0.5 VCC
0.4 VCC
0.44 VCC
Min
Max
0.5 VCC
0.4 VCC
0.44 VCC
0.3 VCC
0.18 VCC
0.18 VCC
2.0
3.0
4.5
0.0
0.0
0.0
TA 3 125°C
Min
Max
0.5 VCC
0.4 VCC
0.44 VCC
0.3 VCC
0.18 VCC
0.18 VCC
V
0.3 VCC
0.18 VCC
0.18 VCC
1.9
2.9
4.4
1.9
2.9
4.4
1.72
2.48
3.80
1.60
2.34
3.66
Units
V
V
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
2.0
3.0
4.5
0.36
0.36
0.36
0.44
0.44
0.44
0.52
0.52
0.52
V
IIN
Maximum
Input Leakage
Current
VIN = 5.5 V or
GND
0
to
5.5
±0.1
±1.0
±1.0
mA
ICC
Maximum
Quiescent
Supply Current
VIN = VCC or GND
5.5
2.0
20
40
mA
ICCT
Quiescent
Supply
Current
Input: VIN = 3.4 V
5.5
1.35
1.50
1.65
mA
IOZ
Maximum
3−State
Leakage
Current
VIN = VIH or VIL
VOUT = VCC or GN
D
5.5
±0.25
±2.5
±2.5
mA
IOPD
Output
Leakage
Current
VOUT = 5.5 V
0.0
0.5
5.0
10
mA
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3
NLSF3T125
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
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AC ELECTRICAL CHARACTERISTICS (Input tr = tf = 3.0 ns)
TA = 25°C
Symbol
tPLH,
tPHL
tPZL,
tPZH
tPLZ,
tPHZ
tOSLH,
tOSHL
Parameter
Maximum Propagation
Delay, A to Y
Maximum Output
Enable TIme, OE to Y
Maximum Output
Disable Time, OE to Y
Output−to−Output Skew
Test Conditions
TA 3 85°C
TA 3 125°C
Min
Typ
Max
Min
Max
Min
Max
Units
VCC = 2.3 ± 0.3 V
CL = 15 pF
1.0
14.5
16.9
1.0
18.1
1.0
19.2
ns
VCC = 3.3 ± 0.3 V
CL = 15 pF
CL = 50 pF
1.0
1.0
5.6
8.1
8.0
11.5
1.0
1.0
9.5
13.0
1.0
1.0
12.0
16.0
ns
VCC = 5.0 ± 0.5 V
CL = 15 pF
CL = 50 pF
1.0
1.0
3.8
5.3
5.5
7.5
1.0
1.0
6.5
8.5
1.0
1.0
8.5
10.5
VCC = 2.3 ± 0.3 V
CL = 15 pF
1.0
14.8
16.2
1.0
17.4
1.0
19.3
ns
VCC = 3.3 ± 0.3 V
RL = 1.0 kW
CL = 15 pF
CL = 50 pF
1.0
1.0
5.4
7.9
8.0
11.5
1.0
1.0
9.5
13.0
1.0
1.0
11.5
15.0
ns
VCC = 5.0 ± 0.5 V
RL = 1.0 kW
CL = 15 pF
CL = 50 pF
1.0
1.0
3.6
5.1
5.1
7.1
1.0
1.0
6.0
8.0
1.0
1.0
7.5
9.5
VCC = 2.3 ± 0.3 V
CL = 15 pF
1.0
15.4
18.0
1.0
19.8
1.0
22.0
ns
VCC = 3.3 ± 0.3 V
RL = 1.0 kW
CL = 50 pF
1.0
9.5
13.2
1.0
15.0
1.0
18.0
ns
VCC = 5.0 ± 0.5 V
RL = 1.0 kW
CL = 50 pF
1.0
6.1
8.8
1.0
10.0
1.0
12.0
ns
VCC = 3.3 ± 0.3 V
(Note 1)
CL = 50 pF
1.5
1.5
2.0
ns
VCC = 5.0 ± 0.5 V
(Note 1)
CL = 50 pF
1.0
1.0
1.5
10
10
10
Cin
Maximum Input
Capacitance
4
Cout
Maximum Three−State
Output Capacitance
(Output in High Impedance
State)
6
CPD
Power Dissipation Capacitance (Note 2)
pF
pF
Typical @ 25°C, VCC = 5.0V
15
pF
1. Parameter guaranteed by design. tOSLH = |tPLHm − tPLHn|, tOSHL = |tPHLm − tPHLn|.
2. CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load.
Average operating current can be obtained by the equation: ICC(OPR) = CPD VCC fin + ICC / 4 (per buffer). CPD is used to determine the
no−load dynamic power consumption; PD = CPD VCC2 fin + ICC VCC.
NOISE CHARACTERISTICS (Input tr = tf = 3.0 ns, CL = 50 pF, VCC = 5.0 V)
TA = 25°C
Symbol
Typ
Characteristic
Max
Units
VOLP
Quiet Output Maximum Dynamic VOL
0.3
0.8
V
VOLV
Quiet Output Minimum Dynamic VOL
−0.3
−0.8
V
VIHD
Minimum High Level Dynamic Input Voltage
3.5
V
VILD
Maximum Low Level Dynamic Input Voltage
1.5
V
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4
NLSF3T125
SWITCHING WAVEFORMS
3.0V
OE
1.5V
3.0V
GND
1.5V
A
tPZL
GND
tPHL
tPLH
Y
tPZH
VOL
VOL + 0.3V
tPHZ
VOH - 0.3V
1.5V
Y
Figure 3.
HIGH
IMPEDANCE
Figure 4.
TEST POINT
TEST POINT
OUTPUT
DEVICE
UNDER
TEST
HIGH
IMPEDANCE
1.5V
Y
VOH
1.5V
tPLZ
DEVICE
UNDER
TEST
CL*
*Includes all probe and jig capacitance
OUTPUT
1 kW
CL *
CONNECT TO VCC WHEN
TESTING tPLZ AND tPZL.
CONNECT TO GND WHEN
TESTING tPHZ AND tPZH.
*Includes all probe and jig capacitance
Figure 5. Test Circuit
Figure 6. Test Circuit
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5
NLSF3T125
PACKAGE DIMENSIONS
QFN16 3x3, 0.5P
CASE 485G−01
ISSUE F
D
ÇÇÇ
ÇÇÇ
ÇÇÇ
PIN 1
LOCATION
2X
A
B
L
DETAIL A
ALTERNATE TERMINAL
CONSTRUCTIONS
E
ÉÉ
ÉÉ
EXPOSED Cu
0.10 C
TOP VIEW
DETAIL B
0.05 C
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b APPLIES TO PLATED
TERMINAL AND IS MEASURED BETWEEN
0.25 AND 0.30 MM FROM TERMINAL.
4. COPLANARITY APPLIES TO THE EXPOSED
PAD AS WELL AS THE TERMINALS.
L1
0.10 C
2X
L
(A3)
A3
A1
DETAIL B
A
0.05 C
ÉÉ
ÉÉ
ÇÇ
MOLD CMPD
ALTERNATE
CONSTRUCTIONS
NOTE 4
A1
SIDE VIEW
C
16X
L
RECOMMENDED
SOLDERING FOOTPRINT*
D2
8
4
16X
MILLIMETERS
MIN
NOM MAX
0.80
0.90
1.00
0.00
0.03
0.05
0.20 REF
0.18
0.24
0.30
3.00 BSC
1.65
1.75
1.85
3.00 BSC
1.65
1.75
1.85
0.50 BSC
0.18 TYP
0.30
0.40
0.50
0.00
0.08
0.15
SEATING
PLANE
0.10 C A B
DETAIL A
DIM
A
A1
A3
b
D
D2
E
E2
e
K
L
L1
16X
0.58
PACKAGE
OUTLINE
9
1
E2
K
2X
2X
1.84 3.30
1
16
e
e/2
BOTTOM VIEW
16X
b
16X
0.30
0.10 C A B
0.05 C
0.50
PITCH
NOTE 3
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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