MUN2136, MMUN2136L, MUN5136, DTA115EE, DTA115EM3 Digital Transistors (BRT) R1 = 100 kW, R2 = 100 kW www.onsemi.com PNP Transistors with Monolithic Bias Resistor Network PIN CONNECTIONS This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base− emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. Features • • • • • PIN 3 COLLECTOR (OUTPUT) PIN 1 BASE (INPUT) R1 R2 PIN 2 EMITTER (GROUND) MARKING DIAGRAMS Simplifies Circuit Design Reduces Board Space Reduces Component Count S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Symbol Max Unit Collector−Base Voltage VCBO 50 Vdc Collector−Emitter Voltage VCEO 50 Vdc Collector Current − Continuous SC−59 CASE 318D STYLE 1 XXX MG G SOT−23 CASE 318 STYLE 6 1 1 MAXIMUM RATINGS (TA = 25°C) Rating XX MG G IC 100 mAdc Input Forward Voltage VIN(fwd) 40 Vdc Input Reverse Voltage VIN(rev) 10 Vdc XX MG G SC−70/SOT−323 CASE 419 STYLE 3 XX M SC−75 CASE 463 STYLE 1 XX M SOT−723 CASE 631AA STYLE 1 1 1 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1 XXX M G = Specific Device Code = Date Code* = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. ORDERING INFORMATION See detailed ordering, marking, and shipping information in the package dimensions section on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2015 April, 2015 − Rev. 3 1 Publication Order Number: DTA115E/D MUN2136, MMUN2136L, MUN5136, DTA115EE, DTA115EM3 Table 1. ORDERING INFORMATION Part Marking Package Shipping† 6N SC−59 (Pb−Free) 3000 / Tape & Reel ACG SOT−23 (Pb−Free) 3000 / Tape & Reel MUN5136T1G 6N SC−70/SOT−323 (Pb−Free) 3000 / Tape & Reel DTA115EET1G, NSVDTA115EET1G* 6N SC−75 (Pb−Free) 3000 / Tape & Reel DTA115EM3T5G 6N SOT−723 (Pb−Free) 8000 / Tape & Reel Device MUN2136T1G MMUN2136LT1G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. PD, POWER DISSIPATION (mW) 300 250 (1) SC−75 and SC−70/SOT323; Minimum Pad (2) SC−59; Minimum Pad (3) SOT−23; Minimum Pad (4) SOT−723; Minimum Pad 200 (1) (2) (3) (4) 150 100 50 0 −50 −25 0 25 50 75 100 125 150 AMBIENT TEMPERATURE (°C) Figure 1. Derating Curve www.onsemi.com 2 MUN2136, MMUN2136L, MUN5136, DTA115EE, DTA115EM3 Table 2. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit 230 338 1.8 2.7 mW THERMAL CHARACTERISTICS (SC−59) (MUN2136) PD Total Device Dissipation TA = 25°C (Note 1) (Note 2) (Note 1) (Note 2) Derate above 25°C mW/°C Thermal Resistance, Junction to Ambient (Note 1) (Note 2) RqJA 540 370 °C/W Thermal Resistance, Junction to Lead (Note 1) (Note 2) RqJL 264 287 °C/W TJ, Tstg −55 to +150 °C 246 400 2.0 3.2 mW Junction and Storage Temperature Range THERMAL CHARACTERISTICS (SOT−23) (MMUN2136L) Total Device Dissipation TA = 25°C PD (Note 1) (Note 2) (Note 1) (Note 2) Derate above 25°C mW/°C Thermal Resistance, Junction to Ambient (Note 1) (Note 2) RqJA 508 311 °C/W Thermal Resistance, Junction to Lead (Note 1) (Note 2) RqJL 174 208 °C/W TJ, Tstg −55 to +150 °C 202 310 1.6 2.5 mW Junction and Storage Temperature Range THERMAL CHARACTERISTICS (SC−70/SOT−323) (MUN5136) Total Device Dissipation TA = 25°C PD (Note 1) (Note 2) (Note 1) (Note 2) Derate above 25°C mW/°C Thermal Resistance, Junction to Ambient (Note 1) (Note 2) RqJA 618 403 °C/W Thermal Resistance, Junction to Lead (Note 1) (Note 2) RqJL 280 332 °C/W TJ, Tstg −55 to +150 °C 200 300 1.6 2.4 mW Junction and Storage Temperature Range THERMAL CHARACTERISTICS (SC−75) (DTA115EE) Total Device Dissipation TA = 25°C PD (Note 1) (Note 2) (Note 1) (Note 2) Derate above 25°C Thermal Resistance, Junction to Ambient (Note 1) (Note 2) Junction and Storage Temperature Range mW/°C RqJA 600 400 °C/W TJ, Tstg −55 to +150 °C 260 600 2.0 4.8 mW THERMAL CHARACTERISTICS (SOT−723) (DTA115EM3) Total Device Dissipation TA = 25°C PD (Note 1) (Note 2) (Note 1) (Note 2) Derate above 25°C Thermal Resistance, Junction to Ambient (Note 1) (Note 2) Junction and Storage Temperature Range 1. FR−4 @ Minimum Pad. 2. FR−4 @ 1.0 x 1.0 Inch Pad. www.onsemi.com 3 mW/°C RqJA 480 205 °C/W TJ, Tstg −55 to +150 °C MUN2136, MMUN2136L, MUN5136, DTA115EE, DTA115EM3 Table 3. ELECTRICAL CHARACTERISTICS (TA = 25°C, unless otherwise noted) Characteristic Symbol Min Typ Max − − 100 − − 500 − − 0.05 50 − − 50 − − 80 150 − − − 0.25 − 1.2 0.5 3.0 1.6 − − − 0.2 4.9 − − Unit OFF CHARACTERISTICS Collector−Base Cutoff Current (VCB = 50 V, IE = 0) ICBO Collector−Emitter Cutoff Current (VCE = 50 V, IB = 0) ICEO Emitter−Base Cutoff Current (VEB = 6.0 V, IC = 0) IEBO Collector−Base Breakdown Voltage (IC = 10 mA, IE = 0) V(BR)CBO Collector−Emitter Breakdown Voltage (Note 3) (IC = 2.0 mA, IB = 0) V(BR)CEO nAdc nAdc mAdc Vdc Vdc ON CHARACTERISTICS hFE DC Current Gain (Note 3) (IC = 5.0 mA, VCE = 10 V) Collector−Emitter Saturation Voltage (Note 3) (IC = 10 mA, IB = 0.3 mA) VCE(sat) Input Voltage (off) (VCE = 5.0 V, IC = 100 mA) Vi(off) Input Voltage (on) (VCE = 0.3 V, IC = 1.0 mA) Vi(on) Output Voltage (on) (VCC = 5.0 V, VB = 5.5 V, RL = 1.0 kW) VOL Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW) VOH Vdc Vdc Vdc Vdc Vdc Input Resistor R1 70 100 130 Resistor Ratio R1/R2 0.8 1.0 1.2 3. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%. www.onsemi.com 4 kW MUN2136, MMUN2136L, MUN5136, DTA115EE, DTA115EM3 TYPICAL CHARACTERISTICS MUN2136, MMUN2136L, MUN5136, DTA115EE, DTA115EM3 1000 25°C IC/IB = 10 150°C hFE, DC CURRENT GAIN VCE(sat), COLLECTOR−EMITTER VOLTAGE (V) 10 1 25°C 150°C 0.1 100 10 −55°C VCE = 10 V 0.01 1 0 10 20 30 40 50 0.1 1 10 100 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 2. VCE(sat) vs. IC Figure 3. DC Current Gain 12 100 10 IC, COLLECTOR CURRENT (mA) f = 10 kHz IE = 0 A TA = 25°C 8 6 4 2 0 150°C −55°C 10 25°C 1 0.1 VO = 5 V 0.01 0 10 20 30 40 0 50 4 8 12 16 20 24 VR, REVERSE VOLTAGE (V) Vin, INPUT VOLTAGE (V) Figure 4. Output Capacitance Figure 5. Output Current vs. Input Voltage 100 Vin, INPUT VOLTAGE (V) Cob, OUTPUT CAPACITANCE (pF) −55°C −55°C 25°C 10 150°C 1 VO = 0.2 V 0.1 0 10 20 30 40 IC, COLLECTOR CURRENT (mA) Figure 6. Input Voltage vs. Output Current www.onsemi.com 5 50 28 MUN2136, MMUN2136L, MUN5136, DTA115EE, DTA115EM3 PACKAGE DIMENSIONS SC−59 CASE 318D−04 ISSUE H D NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3 HE 1 DIM A A1 b c D E e L HE E 2 b e MILLIMETERS NOM MAX 1.15 1.30 0.06 0.10 0.43 0.50 0.14 0.18 2.90 3.10 1.50 1.70 1.90 2.10 0.40 0.60 2.80 3.00 STYLE 1: PIN 1. BASE 2. EMITTER 3. COLLECTOR C A MIN 1.00 0.01 0.35 0.09 2.70 1.30 1.70 0.20 2.50 L A1 SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.4 0.094 1.0 0.039 0.8 0.031 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. www.onsemi.com 6 MIN 0.039 0.001 0.014 0.003 0.106 0.051 0.067 0.008 0.099 INCHES NOM 0.045 0.002 0.017 0.005 0.114 0.059 0.075 0.016 0.110 MAX 0.051 0.004 0.020 0.007 0.122 0.067 0.083 0.024 0.118 MUN2136, MMUN2136L, MUN5136, DTA115EE, DTA115EM3 PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AP NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. D SEE VIEW C 3 HE E DIM A A1 b c D E e L L1 HE q c 1 2 b 0.25 e q A L A1 MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 0° MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 −−− 10 ° STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR L1 VIEW C SOLDERING FOOTPRINT 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 SCALE 10:1 0.8 0.031 www.onsemi.com 7 mm Ǔ ǒinches MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 0° INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 −−− MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 10° MUN2136, MMUN2136L, MUN5136, DTA115EE, DTA115EM3 PACKAGE DIMENSIONS SC−70 (SOT−323) CASE 419−04 ISSUE N NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. D e1 DIM A A1 A2 b c D E e e1 L HE 3 E HE 1 2 b e A 0.05 (0.002) 0.30 0.10 1.80 1.15 1.20 0.20 2.00 MILLIMETERS NOM MAX 0.90 1.00 0.05 0.10 0.70 REF 0.35 0.40 0.18 0.25 2.10 2.20 1.24 1.35 1.30 1.40 0.65 BSC 0.38 0.56 2.10 2.40 STYLE 3: PIN 1. BASE 2. EMITTER 3. COLLECTOR c A2 MIN 0.80 0.00 L A1 SOLDERING FOOTPRINT* 0.65 0.025 0.65 0.025 1.9 0.075 0.9 0.035 0.7 0.028 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. www.onsemi.com 8 MIN 0.032 0.000 0.012 0.004 0.071 0.045 0.047 0.008 0.079 INCHES NOM 0.035 0.002 0.028 REF 0.014 0.007 0.083 0.049 0.051 0.026 BSC 0.015 0.083 MAX 0.040 0.004 0.016 0.010 0.087 0.053 0.055 0.022 0.095 MUN2136, MMUN2136L, MUN5136, DTA115EE, DTA115EM3 PACKAGE DIMENSIONS SC−75/SOT−416 CASE 463 ISSUE F NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. −E− 2 3 b 3 PL 0.20 (0.008) e DIM A A1 b C D E e L HE −D− 1 M D HE C 0.20 (0.008) E STYLE 1: PIN 1. BASE 2. EMITTER 3. COLLECTOR A L MILLIMETERS MIN NOM MAX 0.70 0.80 0.90 0.00 0.05 0.10 0.15 0.20 0.30 0.10 0.15 0.25 1.55 1.60 1.65 0.70 0.80 0.90 1.00 BSC 0.10 0.15 0.20 1.50 1.60 1.70 A1 SOLDERING FOOTPRINT* 0.356 0.014 1.803 0.071 0.787 0.031 0.508 0.020 1.000 0.039 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. www.onsemi.com 9 INCHES NOM MAX 0.031 0.035 0.002 0.004 0.008 0.012 0.006 0.010 0.063 0.067 0.031 0.035 0.04 BSC 0.004 0.006 0.008 0.061 0.063 0.065 MIN 0.027 0.000 0.006 0.004 0.059 0.027 MUN2136, MMUN2136L, MUN5136, DTA115EE, DTA115EM3 PACKAGE DIMENSIONS SOT−723 CASE 631AA ISSUE D NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. −X− D A b1 −Y− 3 E 1 HE 2 2X 2X b e C 0.08 X Y SIDE VIEW TOP VIEW 3X DIM A b b1 C D E e HE L L2 L 1 3X MILLIMETERS MIN NOM MAX 0.45 0.50 0.55 0.15 0.21 0.27 0.25 0.31 0.37 0.07 0.12 0.17 1.15 1.20 1.25 0.75 0.80 0.85 0.40 BSC 1.15 1.20 1.25 0.29 REF 0.15 0.20 0.25 STYLE 1: PIN 1. BASE 2. EMITTER 3. COLLECTOR L2 BOTTOM VIEW RECOMMENDED SOLDERING FOOTPRINT* 2X 0.40 2X 0.27 PACKAGE OUTLINE 1.50 3X 0.52 0.36 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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